公开(公告)号：KR1020090067237A

公开(公告)日：2009-06-25

申请号：KR1020070134785

申请日：2007-12-21

Applicant: 삼성전자주식회사

Inventor： 심재은 ,  김학필 ,  김기홍 ,  김상호 ,  한오연 ,  현기철

IPC: H01L21/3065

CPC classification number: H01J37/3255 ,  H01J37/32082 ,  H01L21/6831

Abstract: A semiconductor manufacturing system is provided to increase or maximize a production yield by preventing defects in a semiconductor manufacturing process due to an overheating effect of an outer top electrode. A semiconductor manufacturing system includes a reaction chamber(120), an electrostatic chuck(130), a bottom electrode(140), an inner top electrode(160), and an outer top electrode(170). The reaction chamber provides a space sealed from the outside. The electrostatic chuck supports a wafer at a lower part of the reaction chamber. The first RF power is applied from a lower part of the electrostatic chuck to the bottom electrode. The inner top electrode injects a reaction gas at an upper end of the reaction chamber facing the lower electrode and the electrostatic chuck. The inner top electrode receives the second RF power to excite the reaction gas in a plasma state. The outer top electrode minimizes an influence caused by the RF power for concentrating the reaction gas of the plasma state on an upper part of the wafer. The outer top electrode is etched by the reaction gas. The outer top electrode is formed with one body in order to prevent generation of particles.

Abstract translation: 提供半导体制造系统以通过防止由于外顶电极的过热效应导致的半导体制造工艺中的缺陷来提高或最大化生产产量。 半导体制造系统包括反应室（120），静电吸盘（130），底电极（140），内顶电极（160）和外顶电极（170）。 反应室提供从外部密封的空间。 静电卡盘在反应室的下部支撑晶片。 第一RF功率从静电卡盘的下部施加到底部电极。 内部顶部电极在反应室的上端面向下部电极和静电吸盘上注入反应气体。 内部顶部电极接收第二RF功率以在等离子体状态下激发反应气体。 外部顶部电极最小化由RF功率引起的对等离子体状态的反应气体浓缩在晶片上部的影响。 外顶电极被反应气体蚀刻。 外顶电极形成有一体以防止颗粒的产生。

公开(公告)号：KR1020010020060A

公开(公告)日：2001-03-15

申请号：KR1019990036746

申请日：1999-08-31

Applicant: 삼성전자주식회사

Inventor： 원종식 ,  김학필

IPC: C23C16/54

CPC classification number: H01L21/67248 ,  H01J37/32449 ,  H01L21/67109

Abstract: PURPOSE: A backside gas supply system in a plasma treater is provided to check whether or not gas is stably supplied by detecting flow rate of gas exhausted and improve uniformity of wafer treating process by stopping backside gas supply system in case of unstable gas supply. CONSTITUTION: A backside gas supply system in a plasma treater comprises a gas supply conduit (235) which is connected to a gas supply source (230), and connected to a plurality of gas supply holes (225) for guiding the gas to lower part of a wafer (210), a unit pressure controller (240) which is arranged on the gas supply conduit (235) for controlling flow rate, a first manometer (250) which is installed on the gas supply conduit (235) for measuring flow rate of gas supplied, an exhaust gas conduit (270) which is divided from the gas supply conduit (235), and through which exhaust gas is exhausted, a pump (P) which is connected to the exhaust gas conduit (270) for sucking in gas, a second and a third manometers (272,274) which are installed in the exhaust gas conduit (270) for measuring flow rate of exhaust gas, and a controller (260) which sends feedback signal to the unit pressure controller (240) by calculating pressure difference from values measured from the exhaust gas conduit (270) and the second and third manometers (272,274).

Abstract translation: 目的：提供等离子体处理器中的背面气体供应系统，通过检测排出的气体的流量来稳定地供应气体，并且通过在气体供应不稳定的情况下停止背侧气体供应系统来提高晶片处理过程的均匀性。 构成：等离子体处理器中的背面气体供应系统包括连接到气体供应源（230）的气体供应管道（235），并连接到多个气体供应孔（225），用于将气体引导到下部 设置在用于控制流量的气体供给管道（235）上的单元压力控制器（240），安装在气体供给管道（235）上用于测量流量的第一压力计（250） 供给气体的比率，从气体供给管道（235）分割出的废气导管（270），排气排出的排气管道（270），与排气导管（270）连接的泵（P） 在第二和第三压力计（272,274）中，安装在用于测量废气流量的排气管道（270）中，以及控制器（260），其通过以下方式将反馈信号发送到单元压力控制器（240）： 从排气管道测量的值计算压力差（ 270）和第二和第三压力计（272,274）。

公开(公告)号：KR100258984B1

公开(公告)日：2000-08-01

申请号：KR1019970073532

申请日：1997-12-24

Applicant: 삼성전자주식회사

Inventor： 김학필 ,  김태룡 ,  이영우

IPC: H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  Y10S156/915

Abstract: PURPOSE: A dry-etching device is provided to increase the yield of the dry etching process by preventing from a micro arcing and the polluted particles generated during the etching process by distributing the plasma only on the wafer. CONSTITUTION: On the lower part of the dry etching device, there is a chuck(112) on which the wafer is loaded. A metal ring(114b) is formed around the chuck to make the density of the plasma uniform. A cathode(122) is mounted on the upper part of the dry etching device to face against the chuck at a predetermined distance. A restriction ring(124) is formed to support the cathode, protruding under the cathode. A screw(126) is mounted in the restriction ring to be fixed to the upper part of the dry etching device to be at a maximal distance from the restriction ring in the scope of maintaining the holding power.

Abstract translation: 目的：提供一种干法蚀刻装置，通过防止微弧化和在蚀刻过程中产生的污染颗粒，通过仅在晶片上分配等离子体来提高干蚀刻工艺的产量。 构成：干蚀刻装置的下部有一个卡盘（112），晶片上装有一个卡盘（112）。 在卡盘周围形成金属环（114b），使等离子体的密度均匀。 阴极（122）安装在干蚀刻装置的上部，以预定的距离与卡盘相对。 形成限制环（124）以支撑在阴极下方突出的阴极。 在保持保持力的范围内，将螺钉（126）安装在限制环中以固定到干法蚀刻装置的上部，以与限制环处于最大距离。

公开(公告)号：KR100599073B1

公开(公告)日：2006-07-12

申请号：KR1019990036746

申请日：1999-08-31

Applicant: 삼성전자주식회사

Inventor： 원종식 ,  김학필

IPC: C23C16/54

Abstract: 설비를 안정적으로 운용할 수 있는 후방 가스 공급 시스템이 개시되어 있다. 웨이퍼의 저면에는 가스 공급원과 연결되어 있는 가스 공급 도관을 통해 헬륨 등의 가스가 공급되어 웨이퍼를 냉각시킨다. 배기 가스는 펌프의 작동에 의해 배기 도관을 통해 외부로 배출된다. 이때, 제1마노메터를 통해 공급 유량이 모니터링되며, 제2 및 제3마노메터를 통해 배기 유량이 모니터링된다. 상기 모니터링된 배기 유량이 상기 공급 유량에 대해 큰 편차를 가질 경우, 제어부에 의해 시스템에 인터락이 걸려 정지된다. 가스 공급이 안정적으로 이루어지는지의 여부를 확인할 수 있으며, 상기 가스 공급이 불안정한 경우에는 후방 가스 공급 시스템을 정지시켜 설비의 안정화를 꾀함으로써 웨이퍼 처리 공정의 균일도를 개선할 수 있다.

Abstract translation: 目的：提供等离子体处理器中的背面气体供应系统，通过检测排出的气体的流量来稳定地供应气体，并且通过在气体供应不稳定的情况下停止背侧气体供应系统来提高晶片处理过程的均匀性。 构成：等离子体处理器中的背面气体供应系统包括连接到气体供应源（230）的气体供应管道（235），并连接到多个气体供应孔（225），用于将气体引导到下部 设置在用于控制流量的气体供给管道（235）上的单元压力控制器（240），安装在气体供给管道（235）上用于测量流量的第一压力计（250） 供给气体的比率，从气体供给管道（235）分割出的废气导管（270），排气排出的排气管道（270），与排气导管（270）连接的泵（P） 在第二和第三压力计（272,274）中，安装在用于测量废气流量的排气管道（270）中，以及控制器（260），其通过以下方式将反馈信号发送到单元压力控制器（240）： 从排气管道测量的值计算压力差（ 270）和第二和第三压力计（272,274）。

公开(公告)号：KR1020020081728A

公开(公告)日：2002-10-30

申请号：KR1020010021056

申请日：2001-04-19

Applicant: 삼성전자주식회사

Inventor： 김학필

IPC: H01L21/3065

Abstract: PURPOSE: A dry etch apparatus for etching an oxide layer is provided to make airtight the inside and the outside of a process chamber and prevent generation of particles by using a vespel ring in an etch process of the dry etch apparatus. CONSTITUTION: A baffle(52) is installed on a hole in the inside of an upper plate(50). An upper electrode(54) is installed at a lower portion of the upper plate(50). A vespel ring(56) is installed at a lower end of the upper electrode(54) in order to prevent a leakage of gas by shielding the inside and the outside of a chamber. A confinement ring(58) is installed at the upper plate(50) in order to support the vespel ring(56). A wafer chuck(62) is installed at a lower end of the inside of a dry etch apparatus. A wafer(60) is loaded on an upper surface of the wafer chuck(62).

Abstract translation: 目的：提供用于蚀刻氧化物层的干式蚀刻装置，以便在干法蚀刻装置的蚀刻工艺中使处理室的内部和外部保持密封，并且通过使用荚膜环来防止颗粒的产生。 构成：挡板（52）安装在上板（50）的内部的孔中。 上电极（54）安装在上板（50）的下部。 在上电极（54）的下端安装有环形圈（56），以防止通过屏蔽室内和外部的气体泄漏。 限制环（58）安装在上板（50）上，以支撑阀座环（56）。 晶片卡盘（62）安装在干蚀刻设备内部的下端。 将晶片（60）装载在晶片卡盘（62）的上表面上。

公开(公告)号：KR1019990053830A

公开(公告)日：1999-07-15

申请号：KR1019970073532

申请日：1997-12-24

Applicant: 삼성전자주식회사

Inventor： 김학필 ,  김태룡 ,  이영우

IPC: H01L21/306

Abstract: 반도체 소자의 제조에 사용되는 건식 식각 장치에 대해 개시한다. 본 발명에 따른 건식 식각 장치에 따르면, 플라즈마의 분포를 조절하며 캐소드를 받치고 있는 제한 링을 고정시키는 나사는 플라즈마 밀도를 균일하게 하기 위한 금속 링과의 거리가 최대가 되는 위치에 설치된다. 따라서 미세 아킹을 방지하고 플라즈마를 웨이퍼상에만 분포시켜, 식각 공정 진행 도중 오염 입자가 발생하는 것을 방지하여 건식 식각 공정의 수율을 향상시킬 수 있게 된다.

公开(公告)号：KR1019970052050A

公开(公告)日：1997-07-29

申请号：KR1019950059379

申请日：1995-12-27

Applicant: 삼성전자주식회사

Inventor： 김학필

IPC: H01L21/203

Abstract: 본 발명은 반도체소자의 제조장비에 사용되는 가스공급시스템에 관한 것으로 특히 가스 탱크의 분리시 발생하는 가스공급 시스템의 오염을 방지하기 위한 가스공급 시스템에 관한 것이다.
이를 위해서 본 발명은 액화된 가스가 채워진 용기와 이 용기에 연결되어 챔버에 가스를 제공하는 가스공급 라인과 이 가스 라인에 연결되어 가스의 공급을 제어하는 각종 밸브의 이전에 설치된 필터를 구비한 가스공급 시스템에 있어서, 상기 용기와 필터 사이의 가스공급라인에 설치되어 필터의 오염을 방지하도록 개폐밸브를 설치하여 가스용기의 교체시 외부공기가 라인내로 유입되어 필터를 부식시켜주는 것을 막아주도록 한 것이다.

公开(公告)号：KR1020090012882A

公开(公告)日：2009-02-04

申请号：KR1020070077083

申请日：2007-07-31

Applicant: 삼성전자주식회사

Inventor： 김상호 ,  김학필 ,  한오연

IPC: H01L21/3065

CPC classification number: H01J37/32605 ,  H01J37/32449

Abstract: A hanger type cathode electrode of a semiconductor dry etcher is provided to reduce the performance unit cost of the etching process in the processing chamber. A hanger type cathode electrode(100) of a semiconductor dry etcher comprises a supporting member(102), a supporting ring(114), engaging members for hanger(120,122), and the electrode plate(112). The supporting member is fixed to the processing chamber. The supporting ring has the penetration hole while uniting with the supporting member. The electrode plate has the mounting groove corresponding to the penetration holes. The engaging members for hanger are arranged in the penetration holes and the mounting grooves.

Abstract translation: 提供半导体干蚀刻机的悬挂式阴极，以降低处理室中蚀刻工艺的性能单位成本。 半导体干蚀刻机的悬挂式阴极电极（100）包括支撑构件（102），支撑环（114），用于衣架（120,122）的接合构件和电极板（112）。 支撑构件固定到处理室。 支撑环在与支撑构件结合的同时具有穿透孔。 电极板具有对应于穿透孔的安装槽。 用于衣架的接合构件布置在穿透孔和安装槽中。

公开(公告)号：KR1020080016246A

公开(公告)日：2008-02-21

申请号：KR1020060078090

申请日：2006-08-18

Applicant: 삼성전자주식회사

Inventor： 현기철 ,  김학필 ,  한오연 ,  최봉 ,  우창우 ,  이종만 ,  김상호

IPC: G01B11/24 ,  G01B11/00

CPC classification number: G01N21/954 ,  G01F23/02

Abstract: An apparatus for monitoring powder in a pipe is provided to check the amount of powder formed in the pipe and thus to prevent contamination of a process chamber due to the powder. An apparatus for monitoring powder in a pipe(30) comprises a light unit(110), a camera unit(120), and a display unit(130). The light unit is configured in the pipe coupled to a process chamber(10), to illuminate inside the pipe. The camera unit, which is configured in the pipe, photographs the inner wall of the pipe to monitor powder in the pipe. The display unit is connected to the camera unit and displays the image.

Abstract translation: 提供一种用于监测管道中的粉末的装置，以检查管道中形成的粉末的量，从而防止由于粉末而导致的处理室的污染。 一种用于监测管道（30）中的粉末的装置，包括光单元（110），照相机单元（120）和显示单元（130）。 光单元配置在耦合到处理室（10）的管中，以在管内照明。 配置在管道中的相机单元拍摄管道的内壁，以监测管道中的粉末。 显示单元连接到相机单元并显示图像。

公开(公告)号：KR1020030062140A

公开(公告)日：2003-07-23

申请号：KR1020020002578

申请日：2002-01-16

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  김학필 ,  성순환 ,  박유춘

IPC: H01L21/205

Abstract: PURPOSE: A coated structure is provided to minimize a delamination phenomenon of a coating layer by including a buffer layer in a coated structure, and to improve impact resistance by making the buffer layer has a similar composition to each adjacent material. CONSTITUTION: A structure is composed of a metal material or a metal compound including the metal material. The buffer layer is composed of the metal compound of the structure and an oxide compound, formed on the structure. A coating layer is formed on the buffer layer, composed of the oxide compound of the buffer layer.

Abstract translation: 目的：提供一种涂覆结构，以通过在涂覆结构中包括缓冲层来最小化涂层的分层现象，并通过使缓冲层具有与每个相邻材料相似的组成来改善耐冲击性。 构成：一种结构由金属材料或包含金属材料的金属化合物构成。 缓冲层由结构的金属化合物和形成在该结构上的氧化物组成。 在由缓冲层的氧化物化合物构成的缓冲层上形成涂层。