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公开(公告)号：KR102222988B1
公开(公告)日：2021-03-04
申请号：KR1020140127569A
申请日：2014-09-24
Applicant: 삼성전자주식회사
IPC: H01L23/367 , H01L23/48 , H01L25/065
CPC classification number: H01L25/0652 , H01L23/367 , H01L23/3675 , H01L23/3677 , H01L23/38 , H01L23/427 , H01L23/4334 , H01L2224/16225 , H01L2225/06572 , H01L2225/06589 , H01L23/49822
Abstract: 반도체 패키지의 멀티 적층체는 수직 방향으로 적층된 복수의 기판들, 복수의 기판들의 각각의 기판 상에 실장된 반도체 패키지들, 복수의 기판들을 공통으로 관통하며, 반도체 패키지들 중 발열 소스로 작용하는 적어도 하나의 반도체 패키지와 수직 방향으로 중첩되는 방열 기둥, 및 방열 기둥의 일단과 열적으로 연결된 열 소산부를 포함한다. 방열 기둥을 각 기판 상에 공통으로 제공하여 열을 효과적으로 방출할 수 있다.
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公开(公告)号：KR1020160137180A
公开(公告)日：2016-11-30
申请号：KR1020150071935
申请日：2015-05-22
Applicant: 삼성전자주식회사
CPC classification number: G06F3/0616 , G06F3/0613 , G06F3/0634 , G06F3/0685 , G11C5/04 , G11C7/04
Abstract: 본발명은비휘발성저장장치의온도제어방법에관한것으로서, 보다구체적으로는상기비휘발성저장장치의온도가제어개시온도보다높은지여부를판단하는단계; 및상기비휘발성저장장치의온도가상기제어개시온도보다높으면, 하기식 (1)에따라데이터입출력성능(P)을변화시키는단계를포함하는비휘발성저장장치의온도제어방법을제공한다. 본발명의비휘발성저장장치의온도제어방법을이용하면열로부터저장장치를보호하는범위에서최대한성능을발휘할수 있는효과가있다.(1)
Abstract translation: 一种控制非易失性存储装置的温度的方法包括：确定非易失性存储装置的温度是否大于控制接合温度，以及当非易失性存储装置的温度变化时，调节数据I / O性能水平P， 易失性存储装置大于控制接合温度。 非易失性存储设备可以在非易失性存储设备被保护的范围内以最大性能水平操作。
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公开(公告)号：KR1020140057147A
公开(公告)日：2014-05-12
申请号：KR1020130110641
申请日：2013-09-13
Applicant: 삼성전자주식회사
IPC: H01L23/34
CPC classification number: H01L2224/16225
Abstract: A semiconductor module according to the present invention includes a heat transmission part which connects at least one among a control device, a buffer semiconductor device, and a memory device. The thermal conductivity of the heat transmission part can be higher than that of a substrate. When the semiconductor module is operated, the temperature of a connector can be lower than that of devices. Heat generated in the devices can be easily discharged to the connector through the heat transmission part. Therefore, the thermal performance and operation reliability of the semiconductor module can be improved.
Abstract translation: 根据本发明的半导体模块包括连接控制装置，缓冲半导体装置和存储装置中的至少一个的热传递部。 传热部的导热率可以高于基板的热导率。 当半导体模块工作时，连接器的温度可以低于器件的温度。 在设备中产生的热量可以通过传热部件容易地排放到连接器。 因此，可以提高半导体模块的热性能和操作可靠性。
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公开(公告)号：KR1020140019066A
公开(公告)日：2014-02-14
申请号：KR1020120078954
申请日：2012-07-19
Applicant: 삼성전자주식회사
CPC classification number: H05K7/2039 , H05K1/0203 , H05K7/20445
Abstract: The concept of the present invention relates to a storage device and more specifically, to a storage device which includes: a first semiconductor device which is mounted on a substrate; a housing which receives the substrate and includes a first fixing unit which fixes the substrate; a first thermal conductive plate which is interposed between the first semiconductor device and the housing, and has thermal conductivity which is higher than the thermal conductivity of the substrate. The storage device according to the present invention is effective in quickly discharging the heat generated from the first semiconductor device to the outside.
Abstract translation: 本发明的概念涉及一种存储装置，更具体地，涉及一种存储装置，其包括：安装在基板上的第一半导体装置; 壳体，其容纳所述基板并且包括固定所述基板的第一固定单元; 第一导热板，介于第一半导体器件和壳体之间，并且具有高于衬底的热导率的导热性。 根据本发明的存储装置有效地将从第一半导体器件产生的热快速放电到外部。
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Patent Agency Ranking
公开(公告)号：KR1020130094107A
公开(公告)日：2013-08-23
申请号：KR1020120015514
申请日：2012-02-15
Applicant: 삼성전자주식회사
IPC: H01L23/34
CPC classification number: H01L23/36 , H01L23/3128 , H01L23/42 , H01L23/49816 , H01L25/0657 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/15311 , H01L2924/18161 , H01L2924/00012 , H01L2924/00
Abstract: PURPOSE: A semiconductor package including a heat spreader and a forming method thereof are provided to improve heat discharge efficiency by forming a second heat spread pattern with a thermal interface material between a semiconductor chip and a first heat spread pattern. CONSTITUTION: A semiconductor chip (41) is mounted on a substrate (21). A first heat spread pattern (29) is mounted on the substrate. The first heat spread pattern includes an opening part to expose the semiconductor chip. A second heat spread pattern (32) is formed between the side of the semiconductor chip and the first heat spread pattern. The second heat spread pattern includes a thermal interface material.
Abstract translation: 目的：提供一种包括散热器及其形成方法的半导体封装，通过在半导体芯片和第一扩散图案之间形成具有热界面材料的第二热扩散图案来提高散热效率。 构成：将半导体芯片（41）安装在基板（21）上。 第一散热图案（29）安装在基板上。 第一扩散图案包括露出半导体芯片的开口部分。 在半导体芯片的一侧和第一扩散图案之间形成第二扩散图案（32）。 第二热扩散图案包括热界面材料。
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公开(公告)号：KR1020160035799A
公开(公告)日：2016-04-01
申请号：KR1020140127569
申请日：2014-09-24
Applicant: 삼성전자주식회사
IPC: H01L23/367 , H01L23/48 , H01L25/065
CPC classification number: H01L25/0652 , H01L23/367 , H01L23/3675 , H01L23/3677 , H01L23/38 , H01L23/427 , H01L23/4334 , H01L23/49822 , H01L2224/16225 , H01L2225/06572 , H01L2225/06589
Abstract: 반도체패키지의멀티적층체는수직방향으로적층된복수의기판들, 복수의기판들의각각의기판상에실장된반도체패키지들, 복수의기판들을공통으로관통하며, 반도체패키지들중 발열소스로작용하는적어도하나의반도체패키지와수직방향으로중첩되는방열기둥, 및방열기둥의일단과열적으로연결된열 소산부를포함한다. 방열기둥을각 기판상에공통으로제공하여열을효과적으로방출할수 있다.
Abstract translation: 半导体封装的多层叠结构包括：多个垂直堆叠的衬底; 分别安装在所述多个基板上的半导体封装; 散热柱，其被构造成共同地穿透所述多个基板，并且在半导体封装中垂直重叠用作热辐射源的至少一个半导体封装; 以及热连接到散热柱的一端的散热单元。 散热柱通常设置在每个基板上以有效地散发热量。
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公开(公告)号：KR1020140070754A
公开(公告)日：2014-06-11
申请号：KR1020120134863
申请日：2012-11-26
Applicant: 삼성전자주식회사
CPC classification number: G06F1/187 , G06F1/203 , G11B2220/60 , G11C5/00 , G11C5/02 , G11C5/025 , H05K7/20445 , G06F1/16 , G06F1/20 , H05K7/20
Abstract: The present invention relates to an auxiliary memory device. More specifically, the provided auxiliary memory device includes: a substrate which includes a first area with a first semiconductor device mounted on and a second area with a second semiconductor mounted on; and a housing which can store at least a part of the substrate. The housing includes a first sub-housing covering the first area, and the first sub-housing passes the upper portion of the first semiconductor device and extends to the second area. The auxiliary memory device can ensure a device vulnerable to heat to be able to perform without being affected by heat to enhance the overall performance of the auxiliary memory device.
Abstract translation: 辅助存储装置技术领域本发明涉及辅助存储装置。 更具体地，所提供的辅助存储器件包括：衬底，其包括安装有第一半导体器件的第一区域和安装有第二半导体的第二区域; 以及可以存储至少一部分基板的壳体。 壳体包括覆盖第一区域的第一副壳体，并且第一子壳体通过第一半导体器件的上部并延伸到第二区域。 辅助存储装置可以确保易受热的装置能够执行而不受热的影响，以增强辅助存储装置的整体性能。
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公开(公告)号：KR102222988B1
公开(公告)日：2021-03-04
申请号：KR1020140127569
申请日：2014-09-24
Applicant: 삼성전자주식회사
IPC: H01L23/367 , H01L23/48 , H01L25/065
Abstract: 반도체패키지의멀티적층체는수직방향으로적층된복수의기판들, 복수의기판들의각각의기판상에실장된반도체패키지들, 복수의기판들을공통으로관통하며, 반도체패키지들중 발열소스로작용하는적어도하나의반도체패키지와수직방향으로중첩되는방열기둥, 및방열기둥의일단과열적으로연결된열 소산부를포함한다. 방열기둥을각 기판상에공통으로제공하여열을효과적으로방출할수 있다.
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