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公开(公告)号:KR1020000025580A
公开(公告)日:2000-05-06
申请号:KR1019980042721
申请日:1998-10-13
Applicant: 삼성전자주식회사
IPC: B24B37/00 , H01L21/304
Abstract: PURPOSE: An abrasion method for semiconductor wafer by using chemical mechanical polishing device is provided to improve the flatness of the semiconductor wafer by controlling the abrasion amount of the wafer uniformly from the center portion to the peripheral portion. CONSTITUTION: An abrasion method for semiconductor wafer by using chemical mechanical polishing device includes the steps of loading a semiconductor wafer on a head(50) mounted on a supporting frame of head shaft(70), abrasion the wafer chemically and mechanically by supplying slurry between the wafer and a polishing pad(20) while rotating the polishing pad(20) which is closely contact with the wafer and the head(50), unloading the wafer from the head(50), wherein the head supports the wafer allowing the peripheral portion of the wafer to be deviated from the polishing pad and the abrasion is carried out by reciprocally moving the head so that the peripheral portion of the wafer contact with the polishing pad less than the central portion of the wafer. thereby the amount of abrasion of the wafer is uniform from the peripheral portion to the central portion.
Abstract translation: 目的:通过使用化学机械抛光装置的半导体晶片的磨损方法被提供以通过从中心部分到周边部分均匀地控制晶片的磨损量来改善半导体晶片的平坦度。 构成:通过使用化学机械抛光装置的半导体晶片的磨损方法包括将半导体晶片装载在安装在头轴(70)的支撑框架上的头部(50)上的步骤,通过在第一和第 晶片和抛光垫(20),同时旋转与晶片和头部(50)紧密接触的抛光垫(20),从头部(50)卸载晶片,其中头部支撑晶片,允许外围 晶片的偏离抛光垫的部分,并且通过使头部往复移动来进行磨损,使得晶片的周边部分与抛光垫接触小于晶片的中心部分。 因此晶片的磨损量从周边部分到中心部分是均匀的。
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公开(公告)号:KR1020020044635A
公开(公告)日:2002-06-19
申请号:KR1020000073624
申请日:2000-12-06
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: PURPOSE: A polishing pad conditioner of a polishing apparatus for manufacturing a semiconductor device is provided to prevent a partial abrasion of a polishing pad by performing an equal conditioning of the polishing pad through the optimization of the polishing pad conditioner. CONSTITUTION: A polishing pad conditioner comprises a bladder(26) connected with diamond pellet having an inner space(26a) injected with air, a conditioner arm(22) fixed on the bladder(26) for supporting the bladder(26), and a mount keeping a distance with the upper portion of the conditioner arm(22) for supporting the conditioner arm(22) by connecting to the center of the conditioner arm(22). The conditioner arm(22) further includes nozzles(30) fixed in the conditioner arm(22) as one body for supplying cleansing solution to the polishing pad, thereby preventing a warpage of the conditioner arm(22) due to a clash between the conditioner arm(22) and the nozzles(30) so as to equally perform the conditioning of the polishing pad.
Abstract translation: 目的:提供一种用于制造半导体器件的抛光装置的抛光垫调节器,以通过抛光垫调节器的优化来执行抛光垫的相同调节来防止抛光垫的部分磨损。 构造:抛光垫调节器包括与金刚石颗粒连接的气囊(26),其具有注入空气的内部空间(26a),固定在用于支撑气囊(26)的气囊(26)上的调节器臂(22) 与所述调节器臂(22)的上部保持一定距离,用于通过连接到所述调节器臂(22)的中心来支撑所述调节器臂(22)。 调节器臂(22)还包括固定在调节器臂(22)中的作为一个主体的喷嘴(30),用于将清洁溶液供应到抛光垫,从而防止由于调节器之间的冲突而引起的调节器臂(22)的翘曲 臂(22)和喷嘴(30),以便均匀地执行抛光垫的调理。
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公开(公告)号:KR1020080058860A
公开(公告)日:2008-06-26
申请号:KR1020060133028
申请日:2006-12-22
Applicant: 삼성전자주식회사
IPC: H01L21/304
CPC classification number: B24B37/26 , B24B37/044 , B24B37/245 , C09G1/00 , C09G1/04 , H01L21/31053 , H01L21/76224
Abstract: A chemical mechanical polishing method and a method of fabricating a semiconductor device using the same are provided to reduce surface energy of an activation solution by adding a surface active agent. A CMP(Chemical Mechanical Polishing) device including a polishing pad and a polishing head is provided(S1). A polishing target loading process is performed to load a polishing target into a polishing head(S2). A polishing activation solution supply process is performed to supply a polishing activation solution including a surface active agent on a polishing pad(S3). A compressing process is performed to compress the polishing target by using a polishing pad(S4). The polishing target and the polishing pad are rotated relatively to each other.
Abstract translation: 提供化学机械抛光方法和制造使用其的半导体器件的方法,以通过添加表面活性剂来降低活化溶液的表面能。 提供了包括抛光垫和抛光头的CMP(化学机械抛光)装置(S1)。 执行抛光对象加载处理以将抛光对象加载到抛光头(S2)中。 进行抛光活化溶液供给处理,以在抛光垫上提供包含表面活性剂的抛光活化溶液(S3)。 执行压缩处理以通过使用抛光垫来压缩抛光对象(S4)。 抛光对象和抛光垫相对旋转。
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公开(公告)号:KR1020000044990A
公开(公告)日:2000-07-15
申请号:KR1019980061497
申请日:1998-12-30
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: A cleaning part of a polishing apparatus is provided to prevent a wafer from breaking when a polishing process is carried out by using a sliding type wafer transferring mechanism. CONSTITUTION: A cleaning part(200) of a polishing apparatus includes a wafer transferring mechanism(WTM) having a body(152) which moves along a rail(140). A transferring handle(56) coupled to the body(152) extends in a perpendicular direction with respect to an extending direction of the rail(140). At an end of the transferring handle(56), a supporter(158) for supporting the wafer is provided. The wafer transferring mechanism(WTM) supports the wafer while glidingly moving in a horizontal direction through a gate formed in a processing chamber(110).
Abstract translation: 目的:提供抛光装置的清洁部件,以通过使用滑动型晶片传送机构进行抛光处理时防止晶片破裂。 构成:抛光装置的清洁部件(200)包括具有沿轨道(140)移动的主体(152)的晶片传送机构(WTM)。 耦合到主体(152)的传送手柄(56)相对于轨道(140)的延伸方向在垂直方向上延伸。 在转移手柄(56)的端部设置有用于支撑晶片的支撑件(158)。 晶片传送机构(WTM)在通过形成在处理室(110)中的栅极的水平方向上滑动地支撑晶片。
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