公开(公告)号：KR1020050008222A

公开(公告)日：2005-01-21

申请号：KR1020030048078

申请日：2003-07-14

Applicant: 삼성전자주식회사

Inventor： 정용길 ,  고영민 ,  유옥순 ,  이병범

IPC: H01L21/66

Abstract: PURPOSE: An apparatus for measuring ion dose of a wafer is provided to keep an ion dose be implanted to a wafer uniformly by placing a standard specimen within the apparatus. CONSTITUTION: An wafer(W) completed the ion implantation is placed on a stage(130) with a first oxide film formed. A standard specimen(170) is arranged at one side of the wafer, and a second oxide film is formed on the standard specimen. A laser beam emitted from a laser source is applied to the standard specimen and to the wafer respectively. A first intensity of the laser beam reflected from the wafer and a second intensity of the laser beam reflected from the standard specimen are detected by a detecting unit. The thickness of the first oxide film and an ion dose implanted into the wafer are measured by a processor, and the measured ion dose is compensated according to the thickness of the measured first oxide film.

Abstract translation: 目的：提供一种用于测量晶片离子剂量的设备，通过将标准样品放置在设备内，使离子剂量均匀地注入到晶片上。 构成：将完成离子注入的晶片（W）放置在形成有第一氧化膜的载物台（130）上。 标准样品（170）布置在晶片的一侧，并且在标准样品上形成第二氧化膜。 从激光源发射的激光束分别施加到标准样品和晶片上。 通过检测单元检测从晶片反射的激光束的第一强度和从标准样品反射的激光束的第二强度。 通过处理器测量第一氧化膜的厚度和注入到晶片中的离子剂量，并且根据所测量的第一氧化物膜的厚度来补偿测量的离子剂量。

公开(公告)号：KR1020040107963A

公开(公告)日：2004-12-23

申请号：KR1020030038675

申请日：2003-06-16

Applicant: 삼성전자주식회사

Inventor： 곽정호 ,  고영민 ,  이명섭 ,  정용길

IPC: H01L21/66

Abstract: PURPOSE: An apparatus for measuring a stepped portion of a semiconductor device is provided to prolong the lifetime of a stylus and to secure reliable data when measuring the stepped portion by keeping the stylus clean using a cleaning part. CONSTITUTION: An apparatus includes a stylus, a stylus assembly, a stage, a support member and a cleaning part. The stylus(400) generates an electric signal corresponding to a stepped portion of an object to be measured. The stylus assembly(420) moves and supports the stylus. The stage is used for supporting the object to be measured. The support member(430) is connected with an external portion of the stage. The cleaning part(440) is located on the support member. The cleaning part is used for cleaning a contact portion(400b) of the stylus.

Abstract translation: 目的：提供一种用于测量半导体器件的阶梯部分的装置，以延长触针的寿命并且通过使用清洁部保持触针清洁来测量阶梯部分时确保可靠的数据。 构成：装置包括触笔，触针组件，台架，支撑构件和清洁部件。 触针（400）产生对应于被测量物体的台阶部分的电信号。 触针组件（420）移动和支撑触针。 舞台用于支撑要测量的物体。 支撑构件（430）与台的外部部分连接。 清洁部分（440）位于支撑构件上。 清洁部件用于清洁触针的接触部分（400b）。

公开(公告)号：KR1020010084008A

公开(公告)日：2001-09-06

申请号：KR1020000008741

申请日：2000-02-23

Applicant: 삼성전자주식회사

Inventor： 곽정호 ,  정용길

IPC: H01L21/66

Abstract: PURPOSE: A stage of a semiconductor manufacturing system is provided to protect a wafer and a semiconductor manufacturing system from static electricity by coating a Teflon layer on a stage for loading the wafer. CONSTITUTION: A stage(100) is used for loading a wafer(WF) transferred by a handler for transferring the wafer(WF). The stage(100) is formed by coating a Teflon layer on a stage chuck of a metal material. The handler(200) is manufactured by a ceramic material for preventing static electricity. A frictional coefficient of the Teflon layer is 0.4 to 0.1. A coating thickness of the Teflon layer is 25 to 37.5 micrometers.

Abstract translation: 目的：提供半导体制造系统的一个阶段，以通过在用于加载晶片的载物台上涂覆特氟隆层来保护晶片和半导体制造系统免受静电。 构成：阶段（100）用于装载用于传送晶片（WF）的处理器传送的晶片（WF）。 阶段（100）通过在金属材料的台架上涂覆特氟隆层而形成。 处理器（200）由用于防止静电的陶瓷材料制成。 特氟隆层的摩擦系数为0.4〜0.1。 特氟龙层的涂层厚度为25至37.5微米。

公开(公告)号：KR1020080017677A

公开(公告)日：2008-02-27

申请号：KR1020060079160

申请日：2006-08-22

Applicant: 삼성전자주식회사

Inventor： 한도석 ,  정용길 ,  김영남 ,  김현준

IPC: H01L21/66

Abstract: An apparatus for measuring surface resistance is provided to change automatically a probe head by implementing a guide pin for protruding a selected probe head among plural probe heads mounted in a rotation plate. An apparatus for measuring surface resistance includes a wafer stage(110), a probe arm(120), a plate(130), plural probe heads(140), and a guide pin(150). The wafer stage supports a wafer(100). The probe arm is formed at an upper portion of the wafer supported on the wafer stage in parallel with the wafer. The plate is formed at an end portion of the probe arm in parallel with the wafer. The probe heads are formed at an edge of the plate. The guide pin protrudes a probe head among the plural probe heads toward the wafer.

Abstract translation: 提供了一种用于测量表面电阻的装置，通过实现用于在安装在旋转板中的多个探头中突出选定的探针头的导销来自动改变探针头。 用于测量表面电阻的装置包括晶片台（110），探针臂（120），板（130），多个探针头（140）和引导销（150）。 晶片台支撑晶片（100）。 探针臂形成在与晶片平行的支撑在晶片台上的晶片的上部。 该板在探针臂的与晶片平行的端部处形成。 探头形成在板的边缘。 引导销将多个探针头中的探针头朝向晶片突出。

公开(公告)号：KR1020030067383A

公开(公告)日：2003-08-14

申请号：KR1020020007557

申请日：2002-02-08

Applicant: 삼성전자주식회사

Inventor： 정용길 ,  윤영교

IPC: H01L21/203

Abstract: PURPOSE: A method for fabricating a standard sample of semiconductor measuring equipment is provided to improve efficiency and reliability in fabricating a semiconductor device by supplying the standard sample to the semiconductor measuring equipment capable of more precisely measuring an alloy composition ratio of solder used for connecting leads of the semiconductor device. CONSTITUTION: Sputtering atoms are formed from a target member(55) composed of an alloy of tin and zinc. The sputtering atoms are uniformly deposited on a plate to fabricate the standard sample. The standard sample is used to form reference data of measuring equipment for measuring an alloy composition ratio of the tin and zinc.

Abstract translation: 目的：提供一种制造半导体测量设备的标准样品的方法，以通过将标准样品提供给能够更精确地测量用于连接引线的焊料的合金组成比的半导体测量设备来提高制造半导体器件的效率和可靠性 的半导体器件。 构成：溅射原子由由锡和锌的合金构成的靶构件（55）形成。 溅射原子均匀地沉积在板上以制造标准样品。 标准样品用于形成用于测量锡和锌的合金组成比的测量设备的参考数据。

公开(公告)号：KR1019990018615A

公开(公告)日：1999-03-15

申请号：KR1019970041804

申请日：1997-08-28

Applicant: 삼성전자주식회사

Inventor： 김태경 ,  정용길 ,  함상규

IPC: H01L21/66

Abstract: 본 발명은 실리콘 웨이퍼에 산화막을 형성하고 이온주입을 실시한 다음 일정 온도에서 일정 시간동안 어니일링을 수행하여 반도체의 불순물 주입량 측정을 위한 측정설비에서의 기준시료를 제조하는 방법에 관한 것이다.
이는 이온주입후 어니일링을 실시하여 제조됨으로써 안정적인 데이터를 확보하여 반도체의 불순물 주입량 측정설비에서 기준시료로 사용될 경우 측정설비의 변화인지 시료 자체의 변화인지를 명확히 판단할 수 있도록 해준다.

公开(公告)号：KR1020040045802A

公开(公告)日：2004-06-02

申请号：KR1020020073661

申请日：2002-11-25

Applicant: 삼성전자주식회사

Inventor： 정용길 ,  고영민 ,  이영선 ,  윤영교

IPC: H01L21/66

Abstract: PURPOSE: A method for measuring the concentration and thickness of a layer is provided to be capable of measuring the thickness and concentration of an FSG(Fluoro-Silicate Glass) layer at a time and for improving work efficiency. CONSTITUTION: Light is partially absorbed in a thin film containing examination materials while the light is irradiated to the thin film, wherein the thin film is formed on a semiconductor substrate(S130). The spectrum of the absorbed light is detected by carrying out a Fourier transformation at the light transmitted through the thin film, and the height and size of light absorption peak corresponding to the analysis object materials are measured from the spectrum(S140). The concentration of the examination material is measured by analyzing the height rate of light absorption peak for the corresponding material(S150). The thickness of the thin film is measured by comparing the peak height and size of the material to the data formed by a reference sample(S160).

Abstract translation: 目的：提供一种测量层的浓度和厚度的方法，以便能够一次测量FSG（氟硅酸盐玻璃）层的厚度和浓度，并提高工作效率。 构成：在将光照射到薄膜上时，将光部分地吸收在含有检查材料的薄膜中，其中在半导体基板上形成薄膜（S130）。 通过在透过薄膜的光进行傅里叶变换来检测吸收光的光谱，并根据光谱测量与分析对象物质对应的光吸收峰的高度和大小（S140）。 通过分析相应材料的光吸收峰的高度率来测量检查材料的浓度（S150）。 通过将材料的峰高和尺寸与由参考样品形成的数据进行比较来测量薄膜的厚度（S160）。

公开(公告)号：KR1019990073972A

公开(公告)日：1999-10-05

申请号：KR1019980007282

申请日：1998-03-05

Applicant: 삼성전자주식회사

Inventor： 김태경 ,  정용길

IPC: H01L21/68

Abstract: 본 발명은 웨이퍼 이송용 로봇아암이 출입하는 도어가 구비되는 반도체장치 제조설비에 관한 것이다.
본 발명은, 웨이퍼 이송용 로봇아암이 출입하는 도어가 구비되는 반도체장치 제조설비에 있어서, 상기 도어 일측에 상기 도어를 출입하는 특정 대상물의 존재유무를 센싱함으로서 상기 도어의 폐쇄동작을 제어하는 센싱수단이 구비됨을 특징으로 한다.
따라서, 도어 일측에 도어의 폐쇄동작을 제어하는 센서를 구비함으로서 로봇아암이 웨이퍼를 설비 내부로 이송시키거나 설비 내부의 웨이퍼를 외부로 이송시킬 때, 도어가 폐쇄됨으로서 웨이퍼가 깨지거나 로봇아암이 도어에 걸리는 등의 문제점이 발생하는 것을 방지할 수 있는 효과가 있다.

公开(公告)号：KR1020060072894A

公开(公告)日：2006-06-28

申请号：KR1020040111661

申请日：2004-12-24

Applicant: 삼성전자주식회사

Inventor： 정용길 ,  김봉수 ,  곽정호

IPC: G01N21/3559 ,  G01N21/84

Abstract: 반도체 제조 공정에서 박막의 농도 측정 방법이 개시된다. 소정의 패턴이 형성된 웨이퍼에 상에 박막을 형성하고, 푸리에 변환 적외선 측정법을 이용하여 상기 박막에 대한 제1적외선 흡수 스펙트럼을 획득한다. 상기 제1적외선 흡수 스펙트럼에 형성된 노이즈를 제거하기 위하여 상기 제1적외선 흡수 스펙트럼을 스무딩(smoothing) 처리하여 제2적외선 흡수 스펙트럼을 획득한다. 상기 제2적외선 흡수 스펙트럼에서 잔류하는 노이즈 영역에 대하여 마스킹(masking) 영역을 설정하고, 상기 마스킹 영역을 제외한 피크들의 면적들을 산출한다. 그리고, 상기 면적들로부터 상기 피크들이 나타내는 물질들 사이의 농도를 산출할 수 있다. 따라서, 테스트 웨이퍼를 별도로 제작할 필요 없이, 제조 공정을 진행되는 런(run) 웨이퍼를 이용하여 상기 박막에 포함되어 있는 불순물의 농도를 용이하게 측정할 수 있다.

公开(公告)号：KR1020010004062A

公开(公告)日：2001-01-15

申请号：KR1019990024655

申请日：1999-06-28

Applicant: 삼성전자주식회사

Inventor： 정용길 ,  곽정호

IPC: G01N21/00

Abstract: PURPOSE: An apparatus for measuring an ion dose is provided to rapidly correct an error of changing argon laser power value applied to a real wafer by monitoring the power value in a wafer level since the argon laser power is measured in the wafer level, thereby resolving the difference of the ion dose between wafers. CONSTITUTION: An apparatus for measuring an ion dose of a wafer(WF) laid on a stage(6) by using an argon laser beam for activating ions injected in the wafer and a helium neon laser beam for detecting the ions, includes a monitoring window(62) having a photoelectric conversion element such as a phototransistor, a photo diode, and a photoconductive cell(cds) and mounted on the stage in the vicinity of a reference block(64) for the focusing of an object lens(12) in addition to the wafer, wherein either laser beam is radiated on the monitoring window and the power of the radiated laser beam is measured by an electric signal.

Abstract translation: 目的：提供一种用于测量离子剂量的装置，通过监测晶圆级的功率值来快速校正施加到真实晶片的氩激光功率值的误差，因为在晶圆级中测量氩激光功率，从而解析 晶圆之间的离子剂量的差异。 构成：用于通过使用氩激光束激活离子注入的离子来测量放置在台（6）上的晶片（WF）的离子剂量的装置和用于检测离子的氦氖激光束的装置，包括监视窗 （62），其具有诸如光电晶体管，光电二极管和光电导元件（cds）的光电转换元件，并安装在用于物镜（12）的聚焦的参考块（64）附近的平台上 除了晶片之外，其中激光束被辐射在监视窗口上，并且通过电信号测量辐射激光束的功率。