公开(公告)号：KR1020110083418A

公开(公告)日：2011-07-20

申请号：KR1020100003630

申请日：2010-01-14

Applicant: 삼성전자주식회사

Inventor： 이수영 ,  신인균 ,  정윤송

IPC: G03F1/00 ,  H01L21/027 ,  H01L21/66 ,  H01L23/60

CPC classification number: G03F1/44 ,  G03F1/40 ,  G03F1/84 ,  H01L21/0338 ,  H01L23/60

Abstract: PURPOSE: An electrostatic discharge(ESD)-sensitive monitoring module under external electric field and a photo-mask including the module are provided to maximize the probability of the generation of ESD, induced by the external electric field, by designing monitoring patterns to directions matched or vertical to the external electric field. CONSTITUTION: A plurality of monitoring patterns(110) which is electrically isolated is orthogonally arranged in the ESD monitoring module of a photo-mask. The monitoring patters are formed in a bar shape. The lengths of the monitoring patterns are relatively longer than the widths of the monitoring patterns. The photo-mask includes a transparent substrate and a light shielding pattern. The light shielding pattern is composed of the monitoring module and a blind region which is arranged around the monitoring module.

Abstract translation: 目的：提供外部电场下的静电放电（ESD）敏感监控模块和包含该模块的光掩模，以通过将监控模式设计为​​匹配的方向来最大限度地发挥由外部电场引起的ESD产生的可能性 或垂直于外部电场。 构成：电隔离的多个监视图案（110）正交布置在光掩模的ESD监视模块中。 监控模式形成为条形。 监视模式的长度比监视模式的宽度相对较长。 光掩模包括透明基板和遮光图案。 遮光图案由监视模块和布置在监视模块周围的盲区组成。

公开(公告)号：KR1020100104120A

公开(公告)日：2010-09-29

申请号：KR1020090022311

申请日：2009-03-16

Applicant: 삼성전자주식회사

Inventor： 김니은 ,  정윤송

IPC: G03F1/52 ,  H01L21/027

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/42 ,  G03F1/78 ,  G03F1/84 ,  G03F9/7084 ,  G03F7/2063 ,  G03F9/7088

Abstract: PURPOSE: A reflective photomask and a method for manufacturing the same are provided to maintain the accuracy of location information of faults, to enhance the production yield of the reflective photomask, and to enable a user to apply a precise faults prevention technology to the reflective photomask. CONSTITUTION: A reflective photomask comprises: a photomask substrate(10); photomask patterns which include circuit patterns for transferring the photomask patterns on a wafer and one or more alignment marks and are formed on the photomask substrate; and one or more reference marks which are formed on the lower side of the photomask substrate. A method for manufacturing the reflective photomask comprises the following steps: forming the reference marks on the lower side of the photomask substrate; forming a plurality of thin films(20) on the upper side of the photomask substrate; and extracting defect data by inspecting the thin films.

Abstract translation: 目的：提供反射光掩模及其制造方法，以保持故障位置信息的准确性，提高反射光掩模的生产成本，并使用户能够将准确的故障预防技术应用于反射光掩模 。 构成：反射光掩模包括：光掩模衬底（10）; 光掩模图案，其包括用于将光掩模图案转印在晶片上的电路图案和一个或多个对准标记，并形成在光掩模基板上; 以及形成在光掩模基板的下侧的一个或多个参考标记。 制造反射光掩模的方法包括以下步骤：在光掩模衬底的下侧形成参考标记; 在所述光掩模基板的上侧形成多个薄膜（20）; 并通过检查薄膜来提取缺陷数据。

公开(公告)号：KR101569896B1

公开(公告)日：2015-11-17

申请号：KR1020090022311

申请日：2009-03-16

Applicant: 삼성전자주식회사

Inventor： 김니은 ,  정윤송

IPC: G03F1/52 ,  H01L21/027

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/42 ,  G03F1/78 ,  G03F1/84 ,  G03F9/7084

Abstract: 반사형포토마스크및 그제조방법이제공된다. 상기반사형포토마스크는포토마스크기판, 포토마스크기판의상부면에형성되는포토마스크패턴들및 포토마스크기판의하부면에형성되는적어도하나의기준마크를구비할수 있다.

Abstract translation: 反射型光掩模包括形成在光掩模衬底的上表面上的光掩模衬底，光掩模图案，至少一个对准标记，形成在光掩模衬底的上表面上，用于使反射光掩模与曝光装置对准，并且在 至少一个基准标记，形成在光掩模基板的下表面上，用于确定光掩模图案中缺陷的位置。

公开(公告)号：KR1020110013705A

公开(公告)日：2011-02-10

申请号：KR1020090071303

申请日：2009-08-03

Applicant: 삼성전자주식회사

Inventor： 정윤송 ,  고형호 ,  한성재 ,  김경노 ,  전찬욱

IPC: H01L21/302

CPC classification number: G03F1/82 ,  H01L21/302

Abstract: PURPOSE: A method and an apparatus for cleaning a photo mask using a blowing operation is provided to expand the life expectancy of the photo mask by preventing the change of a critical dimension due to the loss of chromium. CONSTITUTION: One side of a photo mask(1) is divided into a first region(10) and a second region(20). A main pattern(15) to be protected from a cleaning solution is formed in the first region. A material(25) to be eliminated using the cleaning solution is in the second region. The cleaning solution is sprayed from the inside to the outside of the second region in order to eliminate the material. A gas is blown from the first region to the second region in order to protect the pattern from the cleaning solution.

Abstract translation: 目的：提供一种使用吹风操作来清洁光罩的方法和设备，以通过防止由于铬的损失导致的临界尺寸的变化来扩大光罩的使用寿命。 构成：光掩模（1）的一侧分为第一区域（10）和第二区域（20）。 在第一区域中形成要被清洁溶液保护的主图案（15）。 使用清洗液排除的材料（25）位于第二区域。 清洗液从第二区域的内部喷射到外部，以消除材料。 气体从第一区域吹送到第二区域，以便保护图案免受清洁溶液的影响。

公开(公告)号：KR101652825B1

公开(公告)日：2016-09-01

申请号：KR1020090071303

申请日：2009-08-03

Applicant: 삼성전자주식회사

Inventor： 정윤송 ,  고형호 ,  한성재 ,  김경노 ,  전찬욱

IPC: H01L21/302

CPC classification number: G03F1/82

Abstract: 본발명은포토마스크(photomask)의세정방법에관한것으로, 보호하고자하는패턴(pattern)이형성되는제1 영역및 제1 영역의바깥쪽에위치하고제거하고자하는물질이존재하는제2 영역을포함하는포토마스크를제공하고, 상기물질을제거하기위하여제2 영역의안쪽에서바깥쪽의방향으로세정액을분사하며, 세정액으로부터패턴을보호하기위하여제1 영역에서제2 영역의방향으로기체를블로잉(blowing)한다.

公开(公告)号：KR1020090009055A

公开(公告)日：2009-01-22

申请号：KR1020070072492

申请日：2007-07-19

Applicant: 삼성전자주식회사

Inventor： 김남열 ,  정윤송 ,  정동훈

IPC: H01L21/027 ,  H01L21/66

CPC classification number: H01L22/12 ,  G01N21/956 ,  G03F7/7065 ,  H01L21/67288

Abstract: The defect inspection method of pattern is provided to reduce the repeated pattern check according to the inspection setting sensitivity. The first test susceptibility for the defect check of pattern is set up(S30a). The first deformity detection parameter according to the first test susceptibility is set up(S31a). The same pattern is scanned and the error signal size of the same pattern is calculated(S34a). The first deformity detection parameter and the error signal size are compared(S35a) and then it is determined whether the pattern has a defect or no. The error signal size of the same pattern and image of the same pattern are stored if the pattern has a defect(S36a).

Abstract translation: 提供图案的缺陷检查方法，以根据检查设置灵敏度减少重复图案检查。 建立了模式缺陷检查的第一个测试敏感性（S30a）。 建立根据第一测试敏感性的第一畸形检测参数（S31a）。 扫描相同的图案，并计算相同图案的误差信号大小（S34a）。 比较第一畸变检测参数和误差信号尺寸（S35a），然后确定图案是否具有缺陷或否。 如果图案有缺陷，则存储相同图案的相同图案和图像的误差信号尺寸（S36a）。