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公开(公告)号：KR101679721B1
公开(公告)日：2016-11-28
申请号：KR1020100126890
申请日：2010-12-13
Applicant: 삼성전자주식회사
IPC: G03F1/76 , H01L21/027
CPC classification number: B82Y10/00 , G03F1/46 , G03F1/48 , G03F1/50 , G03F1/54 , G03F1/68 , G03F1/80
Abstract: 투명기판상에순차적으로적층된차광막패턴과반사방지막패턴을형성한다. 차광막패턴의측벽을산화(oxidation) 및질화(nitridation)시킴으로써보호막패턴을형성한다. 보호막패턴을형성함으로써포토마스크제조공정에서사용되는산성용액에의해포토마스크패턴의선폭이감소되는것을방지할수 있다.
Abstract translation: 在制造光掩模图案的方法中，在透明基板上依次形成遮光层图案和抗反射层图案。 在遮光层图案的侧壁上进行氧化和氮化处理，以在遮光层图案的横向部分上形成保护层图案。
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公开(公告)号：KR100699918B1
公开(公告)日：2007-03-26
申请号：KR1020050127689
申请日：2005-12-22
Applicant: 삼성전자주식회사
IPC: H01L21/304
CPC classification number: B08B3/04 , H01L21/67051 , H01L21/67751 , H01L21/68707
Abstract: A unit for preventing drying of a substrate, a substrate cleaning apparatus having the same and a substrate cleaning method are provided to prevent a substrate from being dried in a substrate transfer process by spraying deionized water onto the substrate using a spraying part. A unit for preventing drying of a substrate includes a substrate transfer arm, a spraying part, a container, and a driving part. The substrate transfer arm(110) is installed between at least two baths to transfer a substrate from one bath to the other baths. The spraying part(120) is installed over the substrate to spray deionized water onto the substrate in a substrate transfer process. The container(130) is installed under the substrate to collect deionized water sprayed from the spraying part. The driving part(140) is used for controlling properly the position of the container.
Abstract translation: 提供了用于防止基板干燥的单元，具有该基板的基板清洁装置和基板清洗方法，以通过使用喷射部件将去离子水喷射到基板上来防止基板在基板转印工艺中被干燥。 用于防止基板干燥的单元包括基板传送臂，喷射部，容器和驱动部。 衬底传送臂（110）安装在至少两个浴之间，以将衬底从一个浴转移到另一个浴。 喷涂部件（120）安装在基板上以在基板转印工艺中将去离子水喷射到基板上。 容器（130）安装在基底下面以收集从喷射部分喷射的去离子水。 驱动部（140）用于适当地控制容器的位置。
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公开(公告)号：KR101652825B1
公开(公告)日：2016-09-01
申请号：KR1020090071303
申请日：2009-08-03
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: G03F1/82
Abstract: 본발명은포토마스크(photomask)의세정방법에관한것으로, 보호하고자하는패턴(pattern)이형성되는제1 영역및 제1 영역의바깥쪽에위치하고제거하고자하는물질이존재하는제2 영역을포함하는포토마스크를제공하고, 상기물질을제거하기위하여제2 영역의안쪽에서바깥쪽의방향으로세정액을분사하며, 세정액으로부터패턴을보호하기위하여제1 영역에서제2 영역의방향으로기체를블로잉(blowing)한다.
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公开(公告)号：KR101240333B1
公开(公告)日：2013-03-07
申请号：KR1020070085576
申请日：2007-08-24
Applicant: 삼성전자주식회사
IPC: H01L21/66 , H01L21/027
CPC classification number: G01N1/4055 , G01N30/96 , G01N2001/4061 , G03F1/84 , Y10T436/25125
Abstract: 반도체 소자의 패턴형성용 마스크의 표면에 잔류하는 이온을 분석하는 이온 분석 방법 및 장치를 개시한다. 이온 분석 방법은 먼저, 챔버 내부의 가열 용기내에 일정량의 용매를 채워준다. 이어서, 상기 가열 용기내에 채워진 상기 용매에 마스크를 담근다. 상기 챔버 내부로 개스를 공급하여 상기 챔버의 내부압력을 일정 압력까지 상승시켜 준다. 상기 가열 용기내의 상기 용매를 일정 온도로 일정시간 가열시켜 상기 마스크의 표면으로부터 이온을 분리시켜 준다. 상기 용매를 포집하여 상기 이온을 분석한다.
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公开(公告)号：KR1020110013705A
公开(公告)日：2011-02-10
申请号：KR1020090071303
申请日：2009-08-03
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: G03F1/82 , H01L21/302
Abstract: PURPOSE: A method and an apparatus for cleaning a photo mask using a blowing operation is provided to expand the life expectancy of the photo mask by preventing the change of a critical dimension due to the loss of chromium. CONSTITUTION: One side of a photo mask(1) is divided into a first region(10) and a second region(20). A main pattern(15) to be protected from a cleaning solution is formed in the first region. A material(25) to be eliminated using the cleaning solution is in the second region. The cleaning solution is sprayed from the inside to the outside of the second region in order to eliminate the material. A gas is blown from the first region to the second region in order to protect the pattern from the cleaning solution.
Abstract translation: 目的：提供一种使用吹风操作来清洁光罩的方法和设备，以通过防止由于铬的损失导致的临界尺寸的变化来扩大光罩的使用寿命。 构成：光掩模（1）的一侧分为第一区域（10）和第二区域（20）。 在第一区域中形成要被清洁溶液保护的主图案（15）。 使用清洗液排除的材料（25）位于第二区域。 清洗液从第二区域的内部喷射到外部，以消除材料。 气体从第一区域吹送到第二区域，以便保护图案免受清洁溶液的影响。
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Patent Agency Ranking
公开(公告)号：KR1020060009443A
公开(公告)日：2006-02-01
申请号：KR1020040057331
申请日：2004-07-22
Applicant: 삼성전자주식회사
Abstract: 위상 쉬프트 마스크의 수리 방법을 제공한다. 이 방법은 위상 쉬프트 패턴들이 형성된 위상 쉬프트 마스크에서, 상기 위상 쉬프트 패턴들의 상부면 및 측면을 노출시키고, 상기 노출된 위상 쉬프트 패턴들의 표면에만 선택적으로 보호막을 형성한 후, 상기 보호막이 형성된 위상 쉬프트 마스크를 세정하는 단계를 포함한다.
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公开(公告)号：KR1020120081654A
公开(公告)日：2012-07-20
申请号：KR1020100126890
申请日：2010-12-13
Applicant: 삼성전자주식회사
IPC: G03F1/76 , H01L21/027
CPC classification number: B82Y10/00 , G03F1/46 , G03F1/48 , G03F1/50 , G03F1/54 , G03F1/68 , G03F1/80 , G03F1/76 , H01L21/0274 , H01L21/0337
Abstract: PURPOSE: A photo-mask and a method for manufacturing the same are provided to improve the reliability of a semiconductor device manufacturing process by being repeatedly used without the line width change of patterns. CONSTITUTION: A method for manufacturing a photo-mask includes the following: a light shielding pattern(115) and a reflection preventive film pattern(125) are successively stacked on a transparent substrate(100). The light shielding pattern is based on at least one of chrome(Cr), aluminum(Al), rubidium(Ru), tantalum(Ta), tantalum boron oxide(TaBO), and tantalum boron nitride(TaBN). The sidewall of the light shielding pattern is oxidized and nitrided to form a protective film pattern(135) based on plasma treatment. The plasma treatment uses oxygen gas and nitrogen gas as reactive gas. The mixed ratio of the oxygen gas and the nitrogen gas is in a range between 5 and 8. The temperature of a chamber for the plasma treatment is kept in a range between 200 and 400 degrees Celsius.
Abstract translation: 目的：提供一种光掩模及其制造方法，以通过在没有图案的线宽变化的情况下重复使用来提高半导体器件制造工艺的可靠性。 构成：用于制造光掩模的方法包括以下：在透明基板（100）上依次层叠遮光图案（115）和防反射膜图案（125）。 遮光图案基于铬（Cr），铝（Al），铷（Ru），钽（Ta），钽氧化硼（TaBO）和钽氮化硼（TaBN）中的至少一种。 基于等离子体处理，遮光图案的侧壁被氧化并氮化以形成保护膜图案（135）。 等离子体处理使用氧气和氮气作为反应气体。 氧气和氮气的混合比在5和8之间。用于等离子体处理的室的温度保持在200和400摄氏度之间的范围内。
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公开(公告)号：KR1020090073376A
公开(公告)日：2009-07-03
申请号：KR1020070141297
申请日：2007-12-31
Applicant: 삼성전자주식회사
CPC classification number: C11D11/0047 , C11D3/3947 , C11D7/12 , C11D7/265 , G03F7/425
Abstract: A composition for cleaning a phase shift mask is provided to effectively remove sulfate ion inducing haze and to reduce phase change and transmittance change generated with damage of a phase shift layer. A composition for cleaning a phase shift mask comprises ammonium salts of organic acids of which the ionization constant(Kb) of ammonium salts is greater than the ionization constant(Ka) of organic acid ions; hydrogen peroxide; and water. A method for cleaning a phase shift mask comprises the steps of: (S10) performing a first cleaning process on a substrate formed with the phase shifting mask by using a first cleaning solution including an sulfuric acid to remove photoresist and etching byproducts; and (S40) performing a second cleaning process by using the composition for cleaning the phase shift mask to remove sulfate ion remaining on the substrate without the damage of the phase shifting mask.
Abstract translation: 提供了一种用于清洗相移掩模的组合物，以有效地去除引起雾度的硫酸根离子，并减少由相移层损坏产生的相变和透射率变化。 用于清洗相移掩模的组合物包括铵盐的电离常数（Kb）大于有机酸离子的电离常数（Ka）的有机酸铵盐; 过氧化氢; 和水。 一种清洗相移掩模的方法包括以下步骤：（S10）通过使用包含硫酸的第一清洗溶液来除去光致抗蚀剂和蚀刻副产物，对形成有相移掩模的基板进行第一清洗处理; 和（S40）通过使用用于清洗相移掩模的组合物进行第二清洗处理，以去除残留在基板上的硫酸根离子，而不损害相移掩模。
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公开(公告)号：KR100634387B1
公开(公告)日：2006-10-16
申请号：KR1020040057331
申请日：2004-07-22
Applicant: 삼성전자주식회사
Abstract: 위상 쉬프트 마스크의 수리 방법을 제공한다. 이 방법은 위상 쉬프트 패턴들이 형성된 위상 쉬프트 마스크에서, 상기 위상 쉬프트 패턴들의 상부면 및 측면을 노출시키고, 상기 노출된 위상 쉬프트 패턴들의 표면에만 선택적으로 보호막을 형성한 후, 상기 보호막이 형성된 위상 쉬프트 마스크를 세정하는 단계를 포함한다.
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公开(公告)号：KR1020120097104A
公开(公告)日：2012-09-03
申请号：KR1020110016457
申请日：2011-02-24
Applicant: 삼성전자주식회사
IPC: G03F7/26 , B08B5/02 , H01L21/027
CPC classification number: G03F7/265 , B08B5/023 , G03F7/70033 , G03F7/70583 , G03F7/70925 , H01L21/0274
Abstract: PURPOSE: An ultraviolet ray-based washing apparatus and a washing method using the same are provided to reduce the defect generation of a wafer by preventing the performance reduction of a photo mask. CONSTITUTION: An ultraviolet ray-based washing apparatus includes the following: a substrate with a photo-mask is loaded in an operational chamber(S110); a reflector is arranged at the lower sides of ultraviolet ray lamps in the operation chamber to correspond to the pattern region of the photo-mask(S120); the ultraviolet ray lamps operate to irradiate a surface of remaining organic materials around the photo-mask with ultraviolet rays(S130); the ultraviolet ray lamps are turned off(S140); fluid is supplied to the substrate to be washed(S150); and the substrate is unloaded from the operational chamber(S170). [Reference numerals] (AA) Start; (BB) End; (S110) Loading a wafer with a photo-mask in an operational chamber; (S120) Arranging a reflector at the lower sides of UV lamps in the operational chamber to correspond to the pattern region of the photo-mask; (S130) Operating the UV lamps to activate the surface of the wafer with remaining organic materials; (S140) Turning off the UV lamps; (S150) Supplying treatment fluid on the wafer and washing the wafer; (S160) Stopping supplying the fluid for washing the wafer; (S170) Unloading the wafer from the operational chamber
Abstract translation: 目的：提供一种基于紫外线的洗涤装置和使用其的洗涤方法，以通过防止光掩模的性能降低来减少晶片的缺陷产生。 构成：紫外线洗涤装置包括：将具有光掩模的基板装载到操作室中（S110）; 在操作室中的紫外线灯的下侧配置反射器，以对应于光掩模的图案区域（S120）。 紫外线灯用紫外线照射光掩模周围剩余有机材料的表面（S130）; 紫外线灯熄灭（S140）。 将流体供给到待洗涤基材（S150）; 并且从操作室卸载基板（S170）。 （附图标记）（AA）开始; （BB）结束; （S110）将具有光掩模的晶片装载在操作室中; （S120）在操作室中的UV灯的下侧配置反射镜，以对应于光掩模的图案区域; （S130）操作UV灯，以剩余的有机材料激活晶圆的表面; （S140）关闭紫外线灯; （S150）在晶片上提供处理流体并洗涤晶片; （S160）停止供给洗涤晶片的流体; （S170）将晶片从操作室卸载
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