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公开(公告)号：KR1020010055435A
公开(公告)日：2001-07-04
申请号：KR1019990056644
申请日：1999-12-10
Applicant: 삼성전자주식회사
Inventor： 정의훈
Abstract: PURPOSE: A rapping device for a retain ring of a leveling equipment is provided to stably and conveniently obtain a leveled surface at a contacting surface of the retain ring. CONSTITUTION: Sources of a deionized water supply unit(60), a nitrogen supply unit(80), and a vacuum unit(90) are located at outside of a chamber(20). Moreover, a deionized water supply line, a nitrogen supply line, and a vacuum line are formed from the sources to the chamber. Deionized water is supplied to a polishing surface through the supply line. Nitrogen is supplied to the chamber through the nitrogen supply line. Then, vacuum degree of the chamber is adjusted through the vacuum line. The deionized water is discharged to outside through a wastewater discharge line. Therefore, rapping condition of the chamber and a polishing unit(30) are adjusted. Herein, a control unit(100) controls a rapping device(10) for adjusting the rapping condition.
Abstract translation: 目的：提供一种用于平整设备的保持环的敲击装置，以便在保持环的接触表面上稳定且方便地获得平整的表面。 构成：去离子水供应单元（60），氮气供应单元（80）和真空单元（90）的来源位于室（20）的外部。 此外，从源到室形成去离子水供应管线，氮气供应管线和真空管线。 去离子水通过供应管线供应到抛光表面。 氮通过氮气供应管线供应到室。 然后，通过真空管路调节室的真空度。 去离子水通过废水排放管排出到外面。 因此，调节室的振打状态和抛光单元（30）。 这里，控制单元（100）控制用于调节敲击状态的敲击装置（10）。
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公开(公告)号：KR1020020012387A
公开(公告)日：2002-02-16
申请号：KR1020000045663
申请日：2000-08-07
Applicant: 삼성전자주식회사
Inventor： 정의훈
IPC: H01L21/304
Abstract: PURPOSE: A method for polishing a semiconductor device is provided to minimize damage to a wafer when measured data gets out of a predetermined standard, by performing a measurement process during a chemical mechanical polishing process in the same apparatus and by automatically stopping driving the apparatus. CONSTITUTION: A semiconductor wafer is polished. The wafer is cleaned to eliminate particles on the wafer. Particles and scratch on the surface of the wafer are measured, and the measure data is outputted. The measured data is received and stored. Polishing and cleaning processes are stopped when the measured data gets out of the predetermined standard, and an alarm is given.
Abstract translation: 目的：提供一种用于抛光半导体器件的方法，以便在测量数据脱离预定标准时，通过在同一设备中进行化学机械抛光工艺期间的测量过程并自动停止驱动该设备来最小化对晶片的损坏。 构成：半导体晶片被抛光。 清洁晶片以消除晶片上的颗粒。 测量晶片表面上的颗粒和划痕，并输出测量数据。 接收并存储测量数据。 当测量数据超出预定标准时，抛光和清洁过程停止，并给出报警。
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公开(公告)号：KR1019980021218A
公开(公告)日：1998-06-25
申请号：KR1019960040005
申请日：1996-09-14
Applicant: 삼성전자주식회사
IPC: H01L21/3065
Abstract: 반도체 소자의 건식 식각 방법이 개시되어 있다. 본 발명에 따른 건식 식각 방법에서는 반도체 소자에 사용되는 도전층 패턴을 형성하기 위하여 패시베이션 가스로서 O
2 /Cl
2 가스를 공급한다. 본 발명에 의하면, 환경 오염에 따른 문제를 방지할 수 있고, 웨이퍼당 공정 진행 시간이 단축될 수 있으며, 애싱 및 스트립 공정시 비교적 짧은 시간이 소요된다.-
公开(公告)号：KR1020120020556A
公开(公告)日：2012-03-08
申请号：KR1020100084228
申请日：2010-08-30
Applicant: 삼성전자주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09K3/1463 , C09G1/02 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1683
Abstract: PURPOSE: Slurry composition is provided to reliability of chemical mechanical polishing process including phase change material, and to control the etching rate of an etching object membrane to moderate level. CONSTITUTION: A slurry composition of chemical mechanical polishing process comprises abrasive particles(44), and a non-ionic surfactant(46). The concentration of the non-ionic surfactant in the slurry composition is 100-300 ppb. A forming method of a phase change memory device comprises a step of forming a phase change material film on a substrate(100), and a step of chemical mechanical polishing the phase change material film by using the slurry composition.
Abstract translation: 目的：提供泥浆组合物用于包括相变材料的化学机械抛光工艺的可靠性，并将蚀刻对象膜的蚀刻速率控制在中等水平。 构成：化学机械抛光工艺的浆料组合物包括磨料颗粒（44）和非离子表面活性剂（46）。 浆料组合物中非离子表面活性剂的浓度为100-300ppb。 相变存储装置的形成方法包括在基板（100）上形成相变材料膜的步骤，以及通过使用浆料组合物对相变材料膜进行化学机械抛光的步骤。
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公开(公告)号：KR1020120019242A
公开(公告)日：2012-03-06
申请号：KR1020100082541
申请日：2010-08-25
Applicant: 삼성전자주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
Abstract: PURPOSE: Polishing slurry is provided to prevent the corrosion of an aluminum film, to minimize the surface scratch, and to reduce the abrasion ratio of an aluminum film to an insulation film, thereby preventing the dishing or the settlement of an aluminum foil generated during a damascene process, etc. CONSTITUTION: Polishing slurry comprises an abrasive, an oxidizer, an antti-corrosive agent, and an anionic compound as a abrasion speed reducing agent, which has negative charge in the slurry. A manufacturing method of the semiconductor device comprises: a step of forming an insulative layer having trench inside on a substrate; a step of forming an aluminum layer arranged on the insulative layer with burying the trench; and a step of polishing the aluminum film to expose the insulative layer by using the slurry.
Abstract translation: 目的：提供抛光浆料以防止铝膜的腐蚀，最小化表面划痕，并降低铝膜与绝缘膜的磨损率，从而防止铝箔产生的凹陷或沉积 镶嵌工艺等。构成：抛光浆料包括研磨剂，氧化剂，抗腐蚀剂和作为减磨剂的阴离子化合物，其在浆料中具有负电荷。 半导体器件的制造方法包括：在衬底上形成具有沟槽内部的绝缘层的步骤; 在所述绝缘层上形成布置在所述沟槽上的铝层的工序; 以及通过使用该浆料来抛光铝膜以使绝缘层露出的步骤。
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Patent Agency Ranking
公开(公告)号：KR100577549B1
公开(公告)日：2006-05-08
申请号：KR1019990004087
申请日：1999-02-06
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: 화학적 기계적 연마 설비가 설치된 제 1 영역과 제 2 영역을 독립시키기 위해서 웨이퍼의 턴 오버 기능을 로봇에 대행시키고, 이와 같이 웨이퍼를 턴 오버시킬 수 있는 로봇을 제 1 및 제 2 영역 각각에 한 대씩 설치한다.
따라서, 제 1 영역과 제 2 영역에 설치된 각각의 화학적 기계적 연마설비들이 웨이퍼 턴 오버 장치를 공유하여 사용할 필요가 없음으로, 제 1 및 제 2 영역에 설치된 화학적 기계적 연마 설비 중 어느 하나의 화학적 기계적 연마 설비에 고장이 발생되어도 나머지 하나의 화학적 기계적 연마 설비는 사용 가능토록 하여 설비 가동시간을 증가시킬 수 있다.
또한, 웨이퍼를 로딩, 언로딩시키는 로봇에 구애받지 않고 제 1 영역에 설치된 화학적 기계적 연마 설비와, 제 2 영역에 설치된 화학적 기계적 연마 설비가 서로 독립적으로 웨이퍼 연마 공정을 진행함으로써, 웨이퍼의 로딩, 언로딩 시간이 줄어들 제품의 생산성이 향상될 수 있다.-
公开(公告)号：KR1020040054056A
公开(公告)日：2004-06-25
申请号：KR1020020080635
申请日：2002-12-17
Applicant: 삼성전자주식회사
Inventor： 정의훈
IPC: H01L21/304
Abstract: PURPOSE: CMP(Chemical Mechanical Polishing) equipment for a semiconductor wafer is provided to improve the efficiency of a polishing pad and enhance the productivity of a polishing process by carrying out the polishing process on a plurality of semiconductor wafers using only one polishing pad. CONSTITUTION: CMP equipment(40) for a semiconductor wafer is provided with a head frame capable of being selectively located opposite to a polishing pad or a buffer, and a head(46) supported by the head frame for loading a plurality of semiconductor wafers opposite to the polishing pad and moving the plurality of semiconductor wafers up and down. The CMP equipment further includes a controller for controlling each part.
Abstract translation: 目的：提供用于半导体晶片的CMP（化学机械抛光）设备以通过仅使用一个抛光垫在多个半导体晶片上进行抛光处理来提高抛光垫的效率并提高抛光工艺的生产率。 构成：用于半导体晶片的CMP设备（40）设置有能够选择性地定位成与抛光垫或缓冲器相对的头框架，以及由头框架支撑的头部（46），用于将多个半导体晶片相对 到抛光垫并且上下移动多个半导体晶片。 CMP设备还包括用于控制每个部件的控制器。
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公开(公告)号：KR1020000055454A
公开(公告)日：2000-09-05
申请号：KR1019990004087
申请日：1999-02-06
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: PURPOSE: A chemical mechanical polishing(CMP) apparatus is to provide each robot, transferring a wafer from a wafer cassette to a desired unit, with a function of wafer turnover, thereby improving an operating efficiency of the CMP apparatus. CONSTITUTION: A CMP apparatus comprises a wafer cassette loader(110) with a wafer cassette(15) being laid thereon, a wafer cleaning unit(140), a slurry removing unit(130), a polisher(120), and a wafer turnover robot(160) for turnover the unloaded wafer from the wafer cassette, transferring the wafer to the polisher, and loading the completed wafer on the wafer cassette. The wafer turnover robot includes a transferring rail(162), provided from the polisher to a wafer cassette loader(112), for moving the wafer turnover robot along the rail, a robot body(164), a rotating body(166) mounted on the robot body and being movable by a cylinder and a motor, and a pair of robot arms mounted on the rotating body.
Abstract translation: 目的：化学机械抛光（CMP）装置是提供每个机器人，将晶片从晶片盒转移到所需单元，具有晶片周转的功能，从而提高CMP装置的操作效率。 构造：CMP设备包括晶片盒装载器（110），晶片盒（15）被放置在其上，晶片清洁单元（140），浆料去除单元（130），抛光机（120）和晶片周转 机器人（160），用于从晶片盒翻转卸载的晶片，将晶片转移到抛光机，并将完成的晶片装载在晶片盒上。 晶片周转机器人包括从抛光机提供到晶片盒装载器（112）的转移轨道（162），用于沿着轨道移动晶片周转机器人;机器人主体（164）;旋转体（166），其安装在 该机器人主体通过气缸和电动机可移动，以及一对安装在旋转体上的机器人手臂。
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公开(公告)号：KR1020010002489A
公开(公告)日：2001-01-15
申请号：KR1019990022309
申请日：1999-06-15
Applicant: 삼성전자주식회사
IPC: B24B7/24
Abstract: PURPOSE: A wafer polishing device having a wafer carrier, which a ring-shaped projection is formed on the bottom, is provided to secure the stable polishing conditions while the difference of the layer removing rate by polishing in the central part or the edge part of a wafer is removed and made even. CONSTITUTION: A wafer polishing device comprises; a polishing table(160) which a polishing pad(150) is bonded to on the top; a wafer carrier(120) which has the bottom to press a wafer(110) so that the wafer is bonded to the polishing pad when the wafer is fixed with a fixture; a guide ring(130) which fixes the wafer by surrounding to prevent the detachment of the wafer from the wafer carrier; and a ring-shaped projection part(125) which is projected from the bottom of the wafer carrier, and elongated from the bottom as much as the certain width to expose the center part(120c) of the bottom. The ring-shaped projection part is 2-7mm away from a bottom edge(120a) of the wafer carrier. In case of need, a backing film(140) is equipped in between the wafer carrier and the wafer so that the state of bond between the wafer and the polishing pad is maintained.
Abstract translation: 目的：提供一种具有在底部形成有环形突起的晶片载体的晶片抛光装置，以确保稳定的抛光条件，同时通过在中心部分或边缘部分中的抛光的层去除率的差异 晶片被去除并均匀。 构成：晶片抛光装置包括： 抛光台（160），抛光垫（150）在顶部结合; 晶片载体（120），其具有用于按压晶片（110）的底部，使得当晶片固定有固定装置时晶片结合到抛光垫; 引导环（130），其通过围绕固定所述晶片以防止所述晶片与所述晶片载体分离; 以及从所述晶片载体的底部突出并从所述底部延伸到所述一定宽度的环形突起部（125），以露出所述底部的中心部分（120c）。 环形突起部分距离晶片载体的底部边缘（120a）为2-7mm。 在需要的情况下，在晶片载体和晶片之间配备有背衬膜（140），以保持晶片和抛光垫之间的结合状态。
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公开(公告)号：KR1020010002451A
公开(公告)日：2001-01-15
申请号：KR1019990022264
申请日：1999-06-15
Applicant: 삼성전자주식회사
IPC: B65G49/07
Abstract: PURPOSE: A carrier apparatus is provided to reduce impact upon contacting with a semiconductor wafer. CONSTITUTION: A carrier apparatus comprises a base plate(209), a supporting plate(210), a holding member(207) and a compressing member(205). The supporting plate is placed between the base plate and a semiconductor wafer, contacting with the semiconductor wafer to face the holding side of the semiconductor wafer downward. The holding member has a depth as much as holding the semiconductor wafer on the circumference of the base plate. The holding side of the semiconductor wafer is made of a polyphenylene sulfide material. The compressing member is installed on the outer circumference of the holding member to stick the holding member. Thus, the loss of the semiconductor wafer is reduced by absorbing impact upon contacting with the carrier apparatus.
Abstract translation: 目的：提供载体装置以减少与半导体晶片接触的冲击。 构成：载体装置包括基板（209），支撑板（210），保持构件（207）和压缩构件（205）。 将支撑板放置在基板和半导体晶片之间，与半导体晶片接触以面向半导体晶片的保持侧。 保持构件的深度与在基板的圆周上保持半导体晶片一样多。 半导体晶片的保持侧由聚苯硫醚材料制成。 压缩构件安装在保持构件的外周上以粘贴保持构件。 因此，通过在与载体装置接触时吸收冲击来减小半导体晶片的损耗。
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