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公开(公告)号：KR100508751B1
公开(公告)日：2005-08-17
申请号：KR1020040117880
申请日：2004-12-31
Applicant: 삼성전자주식회사
IPC: G03F7/42
Abstract: 신규한 신너 조성물 및 이 신너 조성물을 사용하여 기판 상에 도포되어 있는 포토레지스트를 스트리핑하는 방법이 개시되어 있다. 상기 신너 조성물은 노말 부틸 아세테이트 8 내지 95중량%, 감마-부티로 락톤 0.1 내지 13중량% 및 비아세트산 에스테르 화합물 3 내지 80중량%로 이루어진다. 또한, 상기 신너 조성물은 노말 부틸 아세테이트 42 내지 90중량%, 감마-부티로 락톤 1 내지 13중량% 및 다가 알코올 유도체 5 내지 45중량%로 이루어질 수도 있다. 그리고, 상기 신너 조성물을 사용하여 기판 에지와 이면 부위에 도포되어 있는 포토레지스트를 선택적으로 스트립핑할 수 있다. 또한, 상기 신너 조성물을 사용하여 기판 전면에 도포되어 있는 포토레지스트를 스트립핑할 수도 있다. 저렴한 비용의 신너 조성물을 사용하여 다양한 종류의 포토레지스트를 스트립핑할 수 있다.
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公开(公告)号：KR1020020084482A
公开(公告)日：2002-11-09
申请号：KR1020010023774
申请日：2001-05-02
Applicant: 삼성전자주식회사
IPC: C11D7/10
CPC classification number: C11D7/06 , C11D7/10 , C11D7/264 , C11D7/32 , C11D7/5004 , C11D11/0047 , Y10S134/902
Abstract: PURPOSE: A cleansing solution and a removing method of an organic component using the solution are provided, to remove photoresist and/or a cured antireflection coating component from a wafer effectively. CONSTITUTION: The cleansing solution comprises 5-30 wt% of an ammonium hydroxide salt; 23-70 wt% of an organic solvent; and 10-50 wt% of water. Preferably the ammonium hydroxide salt is selected from the group consisting of (NH3OH)2SO4, NH3OHCl, NH3OHNO3 and (NH3OH)PO4; and the organic solvent is at least one selected from the group consisting of acetone, acetonitrile and methyl isobutyl ketone. The method for removing an organic component comprises the steps of coating an organic component on a semiconductor wafer loaded in a certain equipment; separating the equipment and dipping it into the cleansing solution; and rising and drying the equipment.
Abstract translation: 目的：提供使用该溶液的清洁溶液和有机成分的除去方法，从而有效地从晶片上除去光致抗蚀剂和/或固化的抗反射涂层成分。 构成：清洁溶液含有5-30重量％的氢氧化铵盐; 23-70重量％的有机溶剂; 和10-50重量％的水。 优选地，氢氧化铵盐选自（NH 3 OH）2 SO 4，NH 3 OHCl，NH 3 OHNO 3和（NH 3 OH）PO 4; 有机溶剂为选自丙酮，乙腈和甲基异丁基酮中的至少一种。 除去有机成分的方法包括以下步骤：在装载在某些设备中的半导体晶片上涂布有机成分; 分离设备并将其浸入清洁溶液中; 并上升和干燥设备。
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公开(公告)号：KR1020010084594A
公开(公告)日：2001-09-06
申请号：KR1020000009764
申请日：2000-02-28
Applicant: 삼성전자주식회사
IPC: H01L21/32
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of enhancing the alignment between a photoresist layer pattern of a sub chuck and a main chuck without being affected by a flow process of a photoresist layer. CONSTITUTION: First, a lower interlayer insulating layer(11) is formed on a semiconductor layer(10), and then a photoresist layer pattern of which an aperture is arranged on a defined area is formed thereon. Then, an etching hole of the lower interlayer insulating layer corresponding to the aperture is formed as a main chuck using the photoresist layer pattern. Next, an upper interlayer insulating layer(15) is formed on the semiconductor layer(10) and the lower interlayer insulating layer(11) within the etching hole. Finally, a photoresist layer pattern(19) of trench type having an aperture(18) overlapped with the etching hole is formed on the upper interlayer insulating layer(15) as a sub chuck.
Abstract translation: 目的：提供一种用于制造半导体器件的方法，其能够增强副卡盘的光致抗蚀剂层图案与主卡盘之间的对准，而不受光致抗蚀剂层的流动过程的影响。 构成：首先，在半导体层（10）上形成下层层间绝缘层（11），然后在其上形成孔径布置在限定区域上的光致抗蚀剂层图案。 然后，使用光致抗蚀剂层图案，形成与孔相对应的下层间绝缘层的蚀刻孔作为主夹。 接下来，在蚀刻孔内的半导体层（10）和下层间绝缘层（11）上形成上层间绝缘层（15）。 最后，在作为副卡盘的上层间绝缘层（15）上形成具有与蚀刻孔重叠的孔（18）的沟槽型光致抗蚀剂图案（19）。
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公开(公告)号：KR100536044B1
公开(公告)日：2005-12-12
申请号：KR1020020013631
申请日：2002-03-13
Applicant: 삼성전자주식회사
IPC: G03F7/42
Abstract: 신규한 신너 조성물 및 이 신너 조성물을 사용하여 기판 상에 도포되어 있는 포토레지스트를 스트리핑하는 방법이 개시되어 있다. 상기 신너 조성물은 노말 부틸 아세테이트 8 내지 95중량%, 감마-부티로 락톤 0.1 내지 13중량% 및 비아세트산 에스테르 화합물 3 내지 80중량%로 이루어진다. 또한, 상기 신너 조성물은 노말 부틸 아세테이트 42 내지 90중량%, 감마-부티로 락톤 1 내지 13중량% 및 다가 알코올 유도체 5 내지 45중량%로 이루어질 수도 있다. 그리고, 상기 신너 조성물을 사용하여 기판 에지와 이면 부위에 도포되어 있는 포토레지스트를 선택적으로 스트립핑할 수 있다. 또한, 상기 신너 조성물을 사용하여 기판 전면에 도포되어 있는 포토레지스트를 스트립핑할 수도 있다. 저렴한 비용의 신너 조성물을 사용하여 다양한 종류의 포토레지스트를 스트립핑할 수 있다.
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公开(公告)号：KR1020030068729A
公开(公告)日：2003-08-25
申请号：KR1020020008324
申请日：2002-02-16
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: G03F7/091 , G03F7/0382 , G03F7/095
Abstract: PURPOSE: A composition for forming anti-reflective light absorbing layer and a method for forming the pattern of a semiconductor device by using the composition are provided, to enable both photoresist layer and anti-reflective layer to be developed after the exposure of the photoresist layer, thereby omitting the removing process of the anti-reflective layer by etching. CONSTITUTION: The composition comprises a polymer having a (meth)acrylate repeating unit; 10-60 wt% of a diazoquinone-based light absorbing group chemically combined with the (meth)acrylate repeating unit; 0.1-1.0 wt% of a photoacid generator; 4-20 wt% of a crosslinking agent which crosslinks the polymer by heat and is de-crosslinked from the crosslinked polymer by an acid; and 0.1-1.0 wt% of a catalyst for promoting the crosslinking of the polymer. Preferably the polymer has the light absorbing repeating unit represented by the formula 4, wherein R1 is H or a methyl group; and D is a light absorbing group; and the light absorbing group is any one represented by the formula 1.
Abstract translation: 目的：提供一种用于形成抗反射光吸收层的组合物和通过使用该组合物形成半导体器件的图案的方法，以使光致抗蚀剂层和抗反射层能够在光致抗蚀剂层曝光之后显影 从而省略了通过蚀刻去除抗反射层的过程。 构成：组合物包含具有（甲基）丙烯酸酯重复单元的聚合物; 10-60重量％的与（甲基）丙烯酸酯重复单元化学结合的重氮醌基吸光基团; 0.1-1.0重量％的光酸产生剂; 4-20重量％的交联剂，其通过加热交联聚合物并通过酸从交联聚合物脱交; 和0.1-1.0重量％的用于促进聚合物交联的催化剂。 优选地，聚合物具有由式4表示的光吸收重复单元，其中R 1是H或甲基; D为光吸收组; 光吸收组为式1表示的任意一种。
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Patent Agency Ranking
公开(公告)号：KR100323831B1
公开(公告)日：2002-02-07
申请号：KR1019990041936
申请日：1999-09-30
Applicant: 삼성전자주식회사
IPC: G03F7/039
CPC classification number: G03F7/0236
Abstract: 감도와해상도가향상된포지티브형포토레지스트조성물, 이의제조방법및 이를사용한패턴의형성방법이개시되어있다. 포토레지스트조성물은구조식 (1)로표시되는화합물및 구조식 (2a) 또는 (2b)로표시되는화합물과의혼합물, 포지티브작용성수지및 용매를포함한다. 감도와해상도가우수하기때문에, 프로파일이향상된패턴을수득할수 있다. (상기구조식에서 R및 R와 R, R및 R는동일하거나상이할수 있으며, 각각수소원자, 1,2-나프토퀴논디아지드-4-설포닐그룹, 1,2-나프토퀴논디아지드-5-설포닐그룹또는 1,2-나프토퀴논디아지드-6-설포닐그룹을나타내는데, 동시에수소원자일수는없고, X, X, X, X, X, X, 및 X는동일하거나상이할수 있으며, 수소원자또는알킬그룹을나타내고, n및 n는 0, 1, 2, 또는 3이며, n는 1 또는 2를나타낸다)
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公开(公告)号：KR1020050019064A
公开(公告)日：2005-02-28
申请号：KR1020040117881
申请日：2004-12-31
Applicant: 삼성전자주식회사
IPC: G03F7/42
Abstract: PURPOSE: A method is provided to strip various photoresists by using an inexpensive thinner composition having an excellent stripping property in a rework process and an EBR process. CONSTITUTION: The method contains the steps of: preparing the thinner composition, wherein the thinner composition comprises an acetic acid ester compound, a gamma-butyrolactone, and a non-acetate type ester compound or the thinner composition comprises an acetic acid ester compound, a gamma-butyrolactone, and a polyalcohol derivative; rotating a substrate coated with a photoresist at a first velocity and spraying the thinner composition on the substrate; and drying the thinner composition.
Abstract translation: 目的：提供一种通过使用在返工过程和EBR工艺中具有优异的剥离性能的廉价的较薄组合物来剥离各种光致抗蚀剂的方法。 方案：该方法包括以下步骤：制备较薄的组合物，其中较薄的组合物包含乙酸酯化合物，γ-丁内酯和非乙酸酯型酯化合物，或更薄的组合物包含乙酸酯化合物， γ-丁内酯和多元醇衍生物; 以第一速度旋转涂覆有光致抗蚀剂的基材并将更薄的组合物喷涂在基材上; 并干燥较薄的组成。
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公开(公告)号：KR100419924B1
公开(公告)日：2004-02-25
申请号：KR1020010023774
申请日：2001-05-02
Applicant: 삼성전자주식회사
IPC: C11D7/10
CPC classification number: C11D7/06 , C11D7/10 , C11D7/264 , C11D7/32 , C11D7/5004 , C11D11/0047 , Y10S134/902
Abstract: A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.
Abstract translation: 一种用于固化的抗反射层（AFC层）组件的清洁溶液和一种使用清洁溶液清洁抗反射层组件的方法，其中所述清洁溶液包含约5-30重量％的氢氧化铵， 70重量％的有机溶剂和约10-50重量％的水。 当在晶片上实施涂覆工艺期间有机材料溅到相邻设备上时，设备被分离，然后浸入清洁溶液中。 此后，将设备冲洗并干燥。 有利地去除固化和未固化的有机材料。 将固化的有机材料放置一段时间，特别是有利地去除抗反射层组分。
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公开(公告)号：KR1020030051129A
公开(公告)日：2003-06-25
申请号：KR1020020013631
申请日：2002-03-13
Applicant: 삼성전자주식회사
IPC: G03F7/42
Abstract: PURPOSE: Provided are a thinner composition and a method for stripping photoresist applied using the same, thereby it is possible to strip various kinds of photoresists applied on a substrate. CONSTITUTION: The thinner composition comprises 8 to 95 wt% of acetic acid ester compound, 0.1 to 13 wt% of gamma-butyro lactone and 3 to 80 wt% of a non-acetic acid ester compound. The acetic acid ester compound is at least one selected from the group consisting of normal butyl acetate, amyl acetate, ethyl acetoacetate and isopropyl acetate. The non-acetic acid ester compound is at least one selected from the group consisting of ethyl lactate, ethyl-3-ethoxy propionate and methyl-3-methoxy propionate. Also, the composition may comprise 42 to 90 wt% of normal butyl acetate, 1 to 13 wt% of gamma-butyro lactone and 5 to 45wt% of a polyol derivative.
Abstract translation: 目的：提供一种更薄的组成和一种剥离使用其的光致抗蚀剂的方法，从而可以剥离施加在基底上的各种光致抗蚀剂。 构成：较薄的组合物包含8至95重量％的乙酸酯化合物，0.1至13重量％的γ-丁内酯和3至80重量％的非乙酸酯化合物。 乙酸酯化合物是选自乙酸正丁酯，乙酸戊酯，乙酰乙酸乙酯和乙酸异丙酯中的至少一种。 非乙酸酯化合物是选自乳酸乙酯，3-乙氧基丙酸乙酯和3-甲氧基丙酸甲酯中的至少一种。 此外，组合物可以包含42-90重量％的正丁酸丁酯，1至13重量％的γ-丁内酯和5至45重量％的多元醇衍生物。
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公开(公告)号：KR1020000065320A
公开(公告)日：2000-11-15
申请号：KR1019990011468
申请日：1999-04-01
Applicant: 삼성전자주식회사
CPC classification number: G03F7/0045 , C08G73/1017 , C08L79/08 , G03F7/0226 , G03F7/0233 , G03F7/033 , G03F7/037 , G03F7/092
Abstract: PURPOSE: A photosensitive polyimide enhanced contrast is provided, which is possible multistep process to enhance the contrast of exposure part and non-exposure part. CONSTITUTION: The photosensitive polyimide enhanced contrast is characterized that; the pattern part as non-exposure part forms by reacting base polymer with photoactive compound; exposure part among the pattern part is dissolved by alkaline developer after carrying out deblocking reaction and exposure; the film is formed, which is comprised of polybenzoxazole the pattern part after photo active compound is divided.
Abstract translation: 目的：提供光敏聚酰亚胺增强对比度，这是可能的多步骤，以增强曝光部分和非曝光部分的对比度。 构成：光敏聚酰亚胺增强对比度的特点是： 通过使基础聚合物与光活性化合物反应形成非暴露部分的图案部分; 图案部分中的曝光部分在进行解块反应和曝光之后被碱性显影剂溶解; 形成膜，其由聚苯并恶唑组成，光活性化合物被分割后的图案部分。
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