公开(公告)号：KR100416791B1

公开(公告)日：2004-01-31

申请号：KR1020010014093

申请日：2001-03-19

Applicant: 삼성전자주식회사

Inventor： 우재영 ,  김경대 ,  김진성 ,  이영구

IPC: H01L21/66

CPC classification number: G02B21/26 ,  G02B21/0016

Abstract: A microscope for inspecting a semiconductor wafer includes an optical unit including objective lenses and oculars for observing the semiconductor wafer; a display unit for magnifying and displaying an image of the semiconductor wafer observed by the optical unit; a sample piece stage holding the semiconductor wafer; a stage moving unit for moving the semiconductor wafer in an x-axis direction, a y-axis direction or a z-axis direction; a stage rotation unit for rotating the semiconductor wafer in a horizontal direction; a stage tilting unit for tilting the semiconductor wafer; and a controller for controlling operation of the microscope.

Abstract translation: 用于检查半导体晶片的显微镜包括：包括物镜和用于观察半导体晶片的目镜的光学单元; 显示单元，用于放大并显示由光学单元观察到的半导体晶片的图像; 保持半导体晶片的样品台; 台移动单元，用于在x轴方向，y轴方向或z轴方向上移动半导体晶片; 台旋转单元，用于沿水平方向旋转半导体晶片; 台架倾斜单元，用于倾斜半导体晶片; 以及用于控制显微镜操作的控制器。

公开(公告)号：KR1020020084482A

公开(公告)日：2002-11-09

申请号：KR1020010023774

申请日：2001-05-02

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  김경대 ,  정회식 ,  전필권 ,  김영호

IPC: C11D7/10

CPC classification number: C11D7/06 ,  C11D7/10 ,  C11D7/264 ,  C11D7/32 ,  C11D7/5004 ,  C11D11/0047 ,  Y10S134/902

Abstract: PURPOSE: A cleansing solution and a removing method of an organic component using the solution are provided, to remove photoresist and/or a cured antireflection coating component from a wafer effectively. CONSTITUTION: The cleansing solution comprises 5-30 wt% of an ammonium hydroxide salt; 23-70 wt% of an organic solvent; and 10-50 wt% of water. Preferably the ammonium hydroxide salt is selected from the group consisting of (NH3OH)2SO4, NH3OHCl, NH3OHNO3 and (NH3OH)PO4; and the organic solvent is at least one selected from the group consisting of acetone, acetonitrile and methyl isobutyl ketone. The method for removing an organic component comprises the steps of coating an organic component on a semiconductor wafer loaded in a certain equipment; separating the equipment and dipping it into the cleansing solution; and rising and drying the equipment.

Abstract translation: 目的：提供使用该溶液的清洁溶液和有机成分的除去方法，从而有效地从晶片上除去光致抗蚀剂和/或固化的抗反射涂层成分。 构成：清洁溶液含有5-30重量％的氢氧化铵盐; 23-70重量％的有机溶剂; 和10-50重量％的水。 优选地，氢氧化铵盐选自（NH 3 OH）2 SO 4，NH 3 OHCl，NH 3 OHNO 3和（NH 3 OH）PO 4; 有机溶剂为选自丙酮，乙腈和甲基异丁基酮中的至少一种。 除去有机成分的方法包括以下步骤：在装载在某些设备中的半导体晶片上涂布有机成分; 分离设备并将其浸入清洁溶液中; 并上升和干燥设备。

公开(公告)号：KR1020010084596A

公开(公告)日：2001-09-06

申请号：KR1020000009766

申请日：2000-02-28

Applicant: 삼성전자주식회사

Inventor： 김병진 ,  이지훈 ,  김희덕 ,  김경대

IPC: H01L21/304

Abstract: PURPOSE: A method for ultrasonic cleaning is provided to clean fully polluted components by using a low frequency ultrasonic wave and a high frequency ultrasonic wave. CONSTITUTION: Impurities are generated within a chamber by performing repeatedly a dry-etching process and a sputtering process. Components are polluted by the impurities. The polluted components are separated from the chamber. The polluted components is inserted into cleaning water. The polluted components are cleaned by using the first ultrasonic wave of 28KHz.(S1) Namely, air bubbles are generated from the cleaning water by the first ultrasonic wave. The polluted components are cleaned by the air bubbles. The polluted components are cleaned by using the second ultrasonic wave of 68KHz.

Abstract translation: 目的：提供一种超声波清洗方法，通过使用低频超声波和高频超声波清洗完全污染的部件。 构成：通过重复执行干蚀刻工艺和溅射工艺，在室内产生杂质。 组分被杂质污染。 污染的组分与室分离。 将污染的部件插入清洁水中。 通过使用28KHz的第一超声波清洗被污染的部件（S1）即，通过第一超声波从清洗水产生气泡。 被污染的部件被气泡清洗。 污染的部件通过使用68KHz的第二超声波进行清洁。

公开(公告)号：KR1020010019237A

公开(公告)日：2001-03-15

申请号：KR1019990035548

申请日：1999-08-26

Applicant: 삼성전자주식회사

Inventor： 박정혁 ,  김경대 ,  문병오 ,  김종극

IPC: H01L21/3065

Abstract: PURPOSE: A dry etching apparatus is provided to improve process uniformity by generating stable plasma in a reaction chamber, and to increase yield by preventing impurities from being generated by an etching process and a polymer deposition process. CONSTITUTION: An inner circumferential surface of an edge ring(350) having a bent portion has a height not lower than that of an upper surface of a wafer settling unit to make the edge ring closely adhered to a wafer(WF), so that impurities caused by an etching process and a polymer deposition process are prevented from being generated on a back surface of the wafer.

Abstract translation: 目的：提供一种干蚀刻装置，通过在反应室中产生稳定的等离子体来提高工艺均匀性，并且通过防止通过蚀刻工艺和聚合物沉积工艺产生杂质来提高产量。 构成：具有弯曲部分的边缘环（350）的内周面具有不低于晶片沉降单元的上表面的高度的高度，以使边缘环紧密地附着在晶片（WF）上，使得杂质 防止在晶片的背面产生蚀刻工艺和聚合物沉积工艺。

公开(公告)号：KR1020010017185A

公开(公告)日：2001-03-05

申请号：KR1019990032569

申请日：1999-08-09

Applicant: 삼성전자주식회사

Inventor： 김병진 ,  이상열 ,  김희덕 ,  김경대

IPC: H01L21/304

Abstract: PURPOSE: An apparatus for eliminating a particle is provided to prevent damage to a surface of the apparatus during a process for removing the particle and to extend a lifetime of the apparatus, by controlling spraying pressure of slurry. CONSTITUTION: A bath(200) has a space inside. A slurry supply unit(218) supplies mixed slurry composed of deionized water and a polishing agent to the inside of the bath. The slurry supply unit includes a slurry supply part(210) and an air supply part(208). The slurry supply part supplies the slurry. The air supply part transfers power to make the slurry sprayed into the inside of the bath. A slurry control unit(216) controls spraying pressure of the slurry.

Abstract translation: 目的：提供一种消除颗粒的装置，以防止在除去颗粒的过程中损坏设备的表面，并通过控制浆料的喷射压力来延长设备的使用寿命。 构成：浴室（200）内有空间。 浆料供给单元（218）将由去离子水和抛光剂组成的混合浆料供应到浴内。 浆料供给单元包括浆料供给部（210）和空气供给部（208）。 浆料供应部件供应浆料。 供气部分转移电力以使浆料喷洒到浴室的内部。 浆料控制单元（216）控制浆料的喷射压力。

公开(公告)号：KR1020010009699A

公开(公告)日：2001-02-05

申请号：KR1019990028212

申请日：1999-07-13

Applicant: 삼성전자주식회사

Inventor： 차훈 ,  김민규 ,  김경대

IPC: H01L21/302

Abstract: PURPOSE: CMP device is provided to make a uniform air pressure generation for descending a wafer, and is contacted with a polishing pad under a horizontal maintenance state without slanting the semiconductor wafer, by forming many air supply connection tubes in both directions. CONSTITUTION: CMP device includes a polishing pad covered with slurry and a polishing head contacted with the polishing pad. The polishing head includes a wafer carrier, a cylindrical tube(424), and a connection tube. The semiconductor wafer(400) is mounted on the wafer carrier. The cylindrical tube descends a wafer carrier for mounting the semiconductor wafer, and makes the semiconductor wafer to be contacted with a surface of the polishing pad. The connection tube provides air-moving path to expand the cylindrical tube, and includes at least two connection tubes in order to move uniformly the air toward the both directions. Thereby, the CMP device makes a uniform air pressure generation for descending a wafer.

Abstract translation: 目的：通过在两个方向上形成多个空气供给连接管，能够使晶片的下降产生均匀的气压，并且在水平维持状态下与抛光垫接触而不使半导体晶片倾斜。 构成：CMP装置包括用浆料覆盖的抛光垫和与抛光垫接触的抛光头。 抛光头包括晶片载体，圆柱形管（424）和连接管。 半导体晶片（400）安装在晶片载体上。 圆柱形管子下降晶片载体以安装半导体晶片，并使半导体晶片与抛光垫的表面接触。 连接管提供空气移动路径以膨胀圆柱形管，并且包括至少两个连接管，以便朝向两个方向均匀地移动空气。 由此，CMP装置对于使晶片下降而产生均匀的空气压力。

公开(公告)号：KR100729228B1

公开(公告)日：2007-06-15

申请号：KR1020010078513

申请日：2001-12-12

Applicant: 삼성전자주식회사

Inventor： 이헌정 ,  김경대 ,  박상오 ,  이보용 ,  이기석 ,  전필권

IPC: G01N9/00

Abstract: 가스 기류를 유지하면서 설비 내의 가스의 농도를 검출하는 장치가 개시되어 있다. 가스가 채워져 있는 밀폐된 설비의 내벽에 설치되고, 발광부 및 반사광의 파장의 세기 변화를 측정하여 상기 가스의 농도를 검출하는 검출부를 포함하는 하우징과, 상기 하우징으로부터 상기 설비의 내부로 연장되는 지지대와, 상기 지지대의 단부에 장착되고, 상기 발광부에서 조사되는 광을 검출부로 반사시키는 반사경 및 상기 하우징으로 상기 가스가 유입되지 않도록 차단시키는 차단창을 구비하는 설비 내부의 가스 검출 장치를 제공한다. 상기 가스 검출 장치는 지지대와 반사경을 설비 내부에 장착시킴으로서, 설비 내부의 가스의 기류를 변동시키지 않으면서 상기 설비 내에 유동하는 소정 가스의 농도를 측정할 수 있다.

公开(公告)号：KR100441249B1

公开(公告)日：2004-07-21

申请号：KR1020010045398

申请日：2001-07-27

Applicant: 삼성전자주식회사

Inventor： 류재준 ,  김경대 ,  길준잉 ,  허용우

IPC: H01L21/304

CPC classification number: H01L22/26

Abstract: The present invention relates to a method and apparatus for automatically measuring the concentration of total organic carbon (TOC) in chemicals and ultra-pure water that are used in a wet etch process. The apparatus includes a sampling line extending from a processing bath, and a pump, for extracting a fluid sample from the processing bath, a buffer for filtering foreign material or air bubbles from the fluid, and an analyzer for analyzing the concentration of TOC in the fluid.

Abstract translation: 本发明涉及用于自动测量用于湿法蚀刻过程的化学品和超纯水中的总有机碳（TOC）浓度的方法和设备。 该设备包括从处理槽延伸的采样管和用于从处理槽中提取流体样本的泵，用于从流体中过滤杂质或气泡的缓冲器以及用于分析处理槽中的TOC浓度的分析器 流体。

公开(公告)号：KR1020030048573A

公开(公告)日：2003-06-25

申请号：KR1020010078513

申请日：2001-12-12

Applicant: 삼성전자주식회사

Inventor： 이헌정 ,  김경대 ,  박상오 ,  이보용 ,  이기석 ,  전필권

IPC: G01N9/00

Abstract: PURPOSE: A gas detector is provided to precisely detect uniformity of gas in equipment by detecting density of gas in each position of equipment. CONSTITUTION: A housing(20) is installed at an inner wall of equipment(10) filled up with gas. The housing(20) includes a light emitting section(16) and a gas detecting section(18) for detecting density of gas by measuring wavelengths of reflection light. A supporter(12) extends into an inner portion of equipment(10) from the housing(20). A reflection mirror(14) is mounted on an end of the supporter(12) in order to reflect light, which is radiated from the light emitting section(16), to a light detecting section. The supporter(12) allows gas molecules to flow into a space formed between the reflection mirror(14) and the housing(20). The supporter(12) has a plurality of supporting parts(12a) having cylindrical shapes and a fixing frame(12b).

Abstract translation: 目的：提供气体检测器，通过检测设备各个位置的气体密度，精确检测设备中气体的均匀性。 构成：在充满气体的设备（10）的内壁上安装一个外壳（20）。 壳体（20）包括通过测量反射光的波长来检测气体密度的发光部分（16）和气体检测部分（18）。 支撑件（12）从壳体（20）延伸到设备（10）的内部。 反射镜（14）安装在支撑体（12）的一端，以将从发光部分（16）辐射的光反射到光检测部分。 支撑体（12）允许气体分子流入形成在反射镜（14）和壳体（20）之间的空间。 支撑件（12）具有多个具有圆柱形状的支撑部分（12a）和固定框架（12b）。

公开(公告)号：KR1020030015716A

公开(公告)日：2003-02-25

申请号：KR1020010049601

申请日：2001-08-17

Applicant: 삼성전자주식회사

Inventor： 박동진 ,  김경대 ,  전상문 ,  황진호 ,  손일현 ,  박상오 ,  전필권

IPC: G03F7/32

CPC classification number: C11D1/526 ,  C11D11/0047 ,  G03F7/425

Abstract: PURPOSE: Provided is a composition which has excellent capability to remove an etching byproduct such as a polymer, an organic metallic polymer and a metal oxide, as well as a resist, and does not damage a lower film, and which does not leave the remnant or residue after rinsing. CONSTITUTION: The composition comprises an alkoxy N-hydroxyalkyl alkaneamide, and a swelling agent. The alkoxy N-hydroxyalkyl alkaneamide is represented by formula: R4-O-R3-CO-N-R1R2OH(wherein R1 is hydrogen atom, or hydrocarbon of C1-C5, R2, R3 and R4 are hydrocarbon of C1-C5 respectively). The content of the alkoxy N-hydroxyalkyl alkaneamide is 10-70 wt% based on total weight of the composition. The swelling agent is hydroxyamine salt. The hydroxyamine salt is hydroxyamine sulfate, hydroxyamine hydrochloride, hydroxyamine nitrate, hydroxyamine phosphate, hydroxyamine oxalate, hydroxyamine citrate, or mixture thereof.

Abstract translation: 目的：提供除去聚合物，有机金属聚合物和金属氧化物等蚀刻副产物以及抗蚀剂的优异能力的组合物，并且不会损伤下膜，并且不会留下残余物 或漂洗后的残留物。 构成：组合物包含烷氧基N-羟基烷基烷酰胺和溶胀剂。 烷氧基N-羟基烷基烷酰胺由下式表示：R4-O-R3-CO-N-R1R2OH（其中R1是氢原子，或C1-C5，R2，R3和R4分别是C1-C5的烃）。 烷氧基N-羟基烷基烷酰胺的含量为组合物总重量的10-70重量％。 溶胀剂是羟胺盐。 羟胺盐是羟胺硫酸盐，羟胺盐酸盐，硝酸羟胺，羟基胺磷酸盐，羟胺草酸盐，羟胺柠檬酸盐，或其混合物。