公开(公告)号：KR101881932B1

公开(公告)日：2018-07-27

申请号：KR1020110130476

申请日：2011-12-07

Applicant: 삼성전자주식회사

Inventor： 이학선 ,  켄토카시키 ,  김명철 ,  권형준 ,  이상민 ,  이우철 ,  정명훈

IPC: H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  B81C1/00531 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  H01L21/3065 ,  H01L27/228 ,  Y10T428/24479

Abstract: 적어도 70 부피%의수소함유가스와, 적어도 2 부피%의 CO 가스로이루어지는식각가스를사용하여자성층을포함하는적층구조를식각한다. 수소함유가스는 CH가스또는 H가스로부터선택되는적어도하나일수 있다. 적어도 70 부피%의수소함유가스와, 적어도 2 부피%의 CO 가스로이루어지는식각가스를사용하는플라즈마식각공정에의해얻어진측벽과, 측벽중 적어도일부영역에서수평방향으로 20 nm 보다크지않은폭을가지는적어도 1 개의자기저항소자를포함하는자기소자를제공한다.

公开(公告)号：KR1020130063873A

公开(公告)日：2013-06-17

申请号：KR1020110130476

申请日：2011-12-07

Applicant: 삼성전자주식회사

Inventor： 이학선 ,  켄토카시키 ,  김명철 ,  권형준 ,  이상민 ,  이우철 ,  정명훈

IPC: H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  B81C1/00531 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  H01L21/3065 ,  H01L27/228 ,  Y10T428/24479

Abstract: PURPOSE: A magnetic device and a method for manufacturing the same are provided to secure a high integration magnetoresistive element by using an etched magnetic layer having a good sidewall profile. CONSTITUTION: A mask pattern is formed in a lamination structure including a lower magnetic layer, a tunneling barrier layer, and an upper magnetic layer(112). A hydrogen plasma process is performed on the upper surface of the laminating structure(114). The laminating structure is etched by performing source or bias power on/off switching operations using an etching gas(116). The etching gas includes a hydrogen-containing gas of at least 70 volume %, and CO gas of at least 2 volume %. [Reference numerals] (112) Form a mask pattern on the lamination structure including a lower magnetic layer, a tunneling barrier layer, and an upper magnetic layer; (114) Expose an exposed upper surface of a lamination structure to hydrogen plasma; (116) Etch the lamination structure by repeating an operation alternatively switching at least one power among source power and bias power using etching gas comprising hydrogen containing gas of at least 70 volume % and CO gas of at least 2 volume %; (AA) Start; (BB) End

Abstract translation: 目的：提供磁性装置及其制造方法，以通过使用具有良好侧壁轮廓的蚀刻磁性层来确保高集成磁阻元件。 构成：掩模图案形成在包括下磁性层，隧道势垒层和上磁性层（112）的叠层结构中。 在层压结构（114）的上表面上进行氢等离子体处理。 通过使用蚀刻气体（116）进行源极或偏置电源的接通/断开切换操作来蚀刻层压结构。 蚀刻气体包括至少70体积％的含氢气体和至少2体积％的CO气体。 （112）在包括下磁性层，隧道势垒层和上磁性层的叠层结构上形成掩模图案; （114）将层压结构的暴露的上表面暴露于氢等离子体; （116）通过使用包括至少70体积％的含氢气体和至少2体积％的CO气体的蚀刻气体重复操作来交替地切换源功率和偏置功率中的至少一个功率的操作来蚀刻层压结构; （AA）开始; （BB）结束

公开(公告)号：KR101489326B1

公开(公告)日：2015-02-11

申请号：KR1020080088915

申请日：2008-09-09

Applicant: 삼성전자주식회사

Inventor： 김윤재 ,  김용진 ,  켄토카시키 ,  배근희

IPC: H01L21/205

CPC classification number: C23C16/505 ,  C23C16/45523 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31608 ,  H01L21/3185

Abstract: 플라즈마를 이용한 기판의 처리 방법이 제공된다. 이에 따르면, 챔버 내에 기판을 로딩한다. 상기 챔버 내에서 제 1 플라즈마 모드로 상기 기판을 1차 처리한다. 상기 챔버 내에서 제 2 플라즈마 모드로 상기 기판을 2차 처리한다. 상기 제 1 플라즈마 모드 및 상기 제 2 플라즈마 모드 가운데 적어도 하나는 상기 기판에 발생하는 플라즈마 대전 손상을 줄이기 위해서 상기 챔버 내에 유도되는 플라즈마의 온 및 오프를 반복하는 시간 변조 모드이고, 상기 시간 변조 모드는 상기 챔버 내에 플라즈마를 유도하기 위해 상기 기판 위의 상부 전극에 공급된 상부 RF 파워 및 상기 기판 아래의 하부 전극에 공급된 바닥 RF 파워를 동시에 주기적으로 온(on) 및 오프(off)시켜 수행한다.

公开(公告)号：KR1020110079221A

公开(公告)日：2011-07-07

申请号：KR1020090136215

申请日：2009-12-31

Applicant: 삼성전자주식회사

Inventor： 켄토카시키 ,  신철호 ,  김상국 ,  이도행 ,  이동석

IPC: H01L21/027

CPC classification number: H01L21/31138 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855 ,  G03F7/427 ,  G03F7/70475 ,  H01L21/76802

Abstract: PURPOSE: A method for manufacturing method a semiconductor device is provided to make it easy controlling a width and a thickness of a resist pattern to a desired size, to enhance a surface roughness and a cross sectional profile shape of the resist pattern and to improve tolerance against a dry engraving process. CONSTITUTION: Resist patterns are formed by exposing and developing a resist film on a substrate. The resist patterns are trimmed and the cross sectional profile of the resist patterns are varied by using the first gas plasma(230). A width of the trimmed resist pattern is increased by using the second gas plasma and the resist pattern is formed.

Abstract translation: 目的：提供一种半导体器件的制造方法，以便容易地将抗蚀剂图案的宽度和厚度控制到期望的尺寸，以增强抗蚀剂图案的表面粗糙度和截面轮廓形状并提高耐受性 反对干雕刻过程。 构成：通过在基板上曝光和显影抗蚀剂膜形成抗蚀剂图案。 修剪抗蚀剂图案，并且通过使用第一气体等离子体（230）来改变抗蚀剂图案的横截面轮廓。 通过使用第二气体等离子体来增加修整的抗蚀剂图案的宽度，并形成抗蚀剂图案。

公开(公告)号：KR101662702B1

公开(公告)日：2016-10-06

申请号：KR1020090136215

申请日：2009-12-31

Applicant: 삼성전자주식회사

Inventor： 켄토카시키 ,  신철호 ,  김상국 ,  이도행 ,  이동석

IPC: H01L21/027

CPC classification number: H01L21/31138 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

Abstract: 레지스트패턴의트리밍공정및 성형공정을포함하는반도체소자의제조방법에관하여개시한다. 본발명에서는기판상의레지스트막을노광및 현상하여레지스트패턴을형성한다. 제1 가스플라즈마를이용하여레지스트패턴을트리밍하여레지스트패턴의단면프로파일을변화시킨다. 제2 가스플라즈마를이용하여트리밍된레지스트패턴의폭을증가시켜성형된레지스트패턴을형성한다.

Abstract translation: 将描述制造包括修整步骤和抗蚀剂图案的形成步骤的半导体器件的方法。 在本发明中，基板上的抗蚀剂膜被曝光并显影以形成抗蚀剂图案。 通过使用第一气体等离子体修整抗蚀剂图案以改变抗蚀剂图案的横截面轮廓。 通过使用第二气体等离子体修整的抗蚀剂图案的宽度增加以形成成型的抗蚀剂图案。

公开(公告)号：KR1020130063871A

公开(公告)日：2013-06-17

申请号：KR1020110130474

申请日：2011-12-07

Applicant: 삼성전자주식회사

Inventor： 이우철 ,  켄토카시키 ,  권형준 ,  정명훈

IPC: H01L43/12 ,  H01L43/08 ,  C23F1/02 ,  C23F1/12 ,  G11B5/31 ,  H01L43/10

CPC classification number: C23F1/12 ,  C23F1/02 ,  C23F4/00 ,  G11B5/3163 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

Abstract: PURPOSE: A magnetic device and a method for manufacturing the same are provided to secure a high integration magnetic device by using a magnetoresistive element with high aspect ratio for a fine MTJ cell. CONSTITUTION: A mask pattern is formed in a lamination structure including a lower magnetic layer, a tunneling barrier layer, and an upper magnetic layer(112). A hydrogen plasma process is performed on the upper surface of the laminating structure(114). A first part including the upper magnetic layer and the tunneling barrier layer is etched by using a first etching gas including H2 gas and a first additive gas(116). The ratio of the H2 gas to the first additive gas is more than 8 : less than 2. A second part including the lower magnetic layer is etched by using a second etching gas including the H2 gas and a second additive gas(118). The ratio of the H2 gas to the second additive gas is more than 8 : less than 2. [Reference numerals] (112) Form a mask pattern in a lamination structure including a lower magnetic layer, a tunneling barrier layer, and an upper magnetic layer; (114) Expose an exposed upper surface of the lamination structure to hydrogen plasma; (116) Etch a first part including the upper part magnetic layer and the tunneling barrier layer by using first etching gas including H2 gas of at least 80 weight% and residual first additive gas; (118) Etch a second part including the lower magnetic layer by using second etching gas including H2 gas of at least 80 weight% and residual second additive gas; (AA) Start; (BB) End

Abstract translation: 目的：提供一种磁性器件及其制造方法，用于通过使用高精度MTJ电池的高纵横比的磁阻元件来确保高集成磁性器件。 构成：掩模图案形成在包括下磁性层，隧道势垒层和上磁性层（112）的叠层结构中。 在层压结构（114）的上表面上进行氢等离子体处理。 通过使用包括H 2气体和第一添加剂气体（116）的第一蚀刻气体来蚀刻包括上磁性层和隧道势垒层的第一部分。 H2气体与第一添加剂气体的比例大于2：通过使用包括H 2气体的第二蚀刻气体和第二添加剂气体（118）来蚀刻包括下部磁性层的第二部分。 （112）在包括下磁性层，隧道势垒层和上层磁性层的层叠结构中形成掩模图案 层; （114）将层压结构的暴露的上表面暴露于氢等离子体; （116）通过使用包括至少80重量％的H 2气体的第一蚀刻气体和残留的第一添加气体来蚀刻包括上部磁性层和隧道势垒层的第一部分; （118）通过使用包括至少80重量％的H 2气体的第二蚀刻气体和残留的第二添加气体来蚀刻包括下部磁性层的第二部分; （AA）开始; （BB）结束

公开(公告)号：KR1020100030122A

公开(公告)日：2010-03-18

申请号：KR1020080088915

申请日：2008-09-09

Applicant: 삼성전자주식회사

Inventor： 김윤재 ,  김용진 ,  켄토카시키 ,  배근희

IPC: H01L21/205

CPC classification number: C23C16/505 ,  C23C16/45523 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31608 ,  H01L21/3185

Abstract: PURPOSE: A method for processing a substrate is provided to prevent the generation of reflected wave and secure a superior coating quality on a corner of the substrate by mixing the plasma of time modulation mode and the plasma of continuous working mode. CONSTITUTION: A substrate is loaded in a chamber(S10). A first treatment for the substrate is performed at a fist plasma mode(S20). A second treatment for the substrate is performed at a second plasma mode(S30). A third treatment for the substrate is performed at a third plasma mode(S40). At least one of the first plasma mode and the second plasma mode is time modulation mode.

Abstract translation: 目的：提供一种处理基板的方法，以通过混合时间调制模式的等离子体和连续工作模式的等离子体来防止反射波的产生并且确保在基板的拐角上的优异的涂层质量。 构成：将基板装载到室中（S10）。 在第一等离子体模式下进行基板的第一处理（S20）。 在第二等离子体模式下进行基板的第二处理（S30）。 在第三等离子体模式下进行基板的第三处理（S40）。 第一等离子体模式和第二等离子体模式中的至少一个是时间调制模式。