公开(公告)号：KR1020040050404A

公开(公告)日：2004-06-16

申请号：KR1020020078228

申请日：2002-12-10

Applicant: 삼성전자주식회사

Inventor： 김상용 ,  한용필 ,  이근택

IPC: C30B33/10

CPC classification number: H01L21/02043 ,  C30B35/007 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/20

Abstract: PURPOSE: A method of handling a process wafer before selective epitaxial growth is provided to prevent transuding of tungsten from a gate line by using fluorine-based solution instead of hydrogen peroxide and solve problems such as the recess of an isolation layer, etc. CONSTITUTION: A silicon oxide layer is removed from an active region of a substrate by using fluorine-based solution such as dilute hydrofluoric acid solution. A substrate(1) is exposed by removing the silicon oxide layer. A damaged surface layer(19) is removed from the exposed substrate. A native oxide layer is removed from the substrate by using dilute solution of hydrofluoric acid. A selective epitaxial growth process is performed on the substrate. The fluorine-based solution is formed by adding organic acid or organic solvent and basic solution to the solution including hydrofluoric acid or NH4F.

Abstract translation: 目的：提供在选择性外延生长之前处理工艺晶片的方法，以通过使用氟基溶液代替过氧化氢来防止钨从栅极线渗出，并解决诸如隔离层的凹陷等问题。构成： 通过使用稀氢氟酸溶液等氟系溶液，从基板的有源区域除去氧化硅层。 通过去除氧化硅层来暴露衬底（1）。 损坏的表面层（19）从暴露的基底去除。 通过使用稀释的氢氟酸溶液从基材中除去天然氧化物层。 在衬底上进行选择性外延生长工艺。 通过向包含氢氟酸或NH 4 F的溶液中加入有机酸或有机溶剂和碱性溶液形成氟基溶液。

公开(公告)号：KR1020040013580A

公开(公告)日：2004-02-14

申请号：KR1020020046575

申请日：2002-08-07

Applicant: 삼성전자주식회사

Inventor： 이재동 ,  한용필 ,  홍창기

IPC: H01L21/304

CPC classification number: H01L21/76224

Abstract: PURPOSE: A method for planarizing the surface of a semiconductor device is provided to effectively control a dishing phenomenon in a recessed region in a surface planarization process performed by a chemical mechanical process(CMP) even if the width of the recessed region is broad, by introducing a medium material layer with a high polishing removal rate as compared with a buried material layer filled in the recessed region like a trench region and by using CMP slurry that makes the difference between the removal rates large. CONSTITUTION: The recessed region is formed on a base material layer by using an etch barrier layer pattern formed on the base material layer. The medium material layer is formed on the etch barrier layer pattern. A buried material layer that has a high polishing removal rate as compared with the medium material layer in a CMP process is formed to fill the recessed region and protrude to the medium material layer by a predetermined height. The buried material layer is eliminated by a CMP process until the surface of the medium material layer is exposed. The medium material layer and the buried material layer are planarized by a CMP process until the surface of the etch barrier layer pattern is exposed.

Abstract translation: 目的：提供一种用于平坦化半导体器件的表面的方法，以便即使凹陷区域的宽度宽，通过化学机械处理（CMP）进行的表面平坦化处理中的凹陷区域中的凹陷现象，由 与如沟槽区域填充在凹陷区域中的掩埋材料层相比，引入具有高抛光去除速率的介质材料层，并且通过使用使除去速率差大的CMP浆料。 构成：通过使用形成在基材层上的蚀刻阻挡层图案，在基材层上形成凹陷区域。 介质材料层形成在蚀刻阻挡层图案上。 形成与CMP工艺中的中等材料层相比具有高的抛光去除率的掩埋材料层，以填充凹陷区域并向介质材料层突出预定的高度。 掩埋材料层通过CMP工艺消除，直到介质材料层的表面露出。 介质材料层和掩埋材料层通过CMP工艺平坦化，直到暴露蚀刻阻挡层图案的表面。

公开(公告)号：KR100496867B1

公开(公告)日：2005-06-22

申请号：KR1020020078228

申请日：2002-12-10

Applicant: 삼성전자주식회사

Inventor： 김상용 ,  한용필 ,  이근택

IPC: C30B33/10

Abstract: 공정 기판의 활성 영역 위쪽의 실리콘 산화막을 묽은 불산 용액을 이용하여 제거함으로써 기판을 드러내는 단계, 불소계 수용액을 이용하여 드러난 기판에서 손상된 표면층을 제거하는 단계, 불산 희석액을 이용하여 기판의 자연 산화막을 제거하는 단계, 선택적 결정 성장을 실시하는 단계를 구비하여 이루어지는 선택적 결정 성장 전처리 방법이 개시된다. 이때, 불소계 수용액은 불산 혹은 불화 암모늄(NH
4 F)이 첨가된 수용액으로서 이들 외에 초산(CH
3 COOH)같은 유기산이나, 유기 용제와 수산화 암모늄 같은 염기성 용액이 더 혼합된 혼합 용액이 될 수 있고, 유기산과 염기성 용액을 대신하여 초산 암모늄과 같은 염의 형태가 더 포함되는 혼합 용액이 될 수 있다.
본 발명에서는 기판 손상층을 제거할 때 종래와 달리 과산화수소를 사용하지 않으므로 텅스텐 등이 게이트 라인으로부터 침출되어 나오는 것을 방지할 수 있고, 본 발명의 불소계 수용액은 불산의 농도를 조절하고 작용을 억제하기 쉬워 불산에 의한 소자 분리막 리세스 등의 문제점을 줄일 수 있다.

公开(公告)号：KR100450679B1

公开(公告)日：2004-10-01

申请号：KR1020020043898

申请日：2002-07-25

Applicant: 삼성전자주식회사

Inventor： 김상용 ,  이근택 ,  한용필

IPC: H01L27/04

CPC classification number: H01L21/31111 ,  H01L21/31116 ,  H01L27/10852 ,  H01L28/91

Abstract: A semiconductor memory device is provided, including a substrate and storage nodes formed on the substrate from a silicon oxide layer, the layer having been substantially removed by wet etching the silicon oxide layer to a predetermined depth of the storage nodes and dry etching the remaining portion of the silicon oxide layer to expose the storage nodes.

Abstract translation: 提供了一种半导体存储器件，其包括衬底和由氧化硅层形成在衬底上的存储节点，通过将氧化硅层湿法刻蚀到存储节点的预定深度并且干法刻蚀剩余部分 的氧化硅层露出存储节点。

公开(公告)号：KR1020030071286A

公开(公告)日：2003-09-03

申请号：KR1020020010928

申请日：2002-02-28

Applicant: 삼성전자주식회사

Inventor： 이재동 ,  윤보언 ,  한용필

IPC: H01L21/304

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: PURPOSE: Chemical mechanical polishing slurry is provided to improve uniformity on a wafer and prevent a dishing phenomenon by making a variation width of the thickness of a stopper when high selectivity slurry is used. CONSTITUTION: A slurry kit is used in a chemical mechanical polishing process performed on a substrate including a polishing stopper(15) and a polishing target layer(10) covering the polishing stopper. The first water-soluble slurry agent includes a metal oxide polishing particle of at least one kind and a negative ionic polymer passivation agent. The second water-soluble slurry agent includes a metal oxide polishing particle of at least one kind and a passivation agent whose content is smaller than that of the passivation agent including in the first slurry agent. The second slurry agent has hydrogen ion concentration(pH) that is higher than an isoelectric point of the polishing target layer and lower than an isoelectric point of the polishing stopper.

Abstract translation: 目的：提供化学机械抛光浆料，以提高晶片的均匀性，并通过在使用高选择性浆料时使塞子的厚度变化宽度来防止凹陷现象。 构成：在包括抛光停止器（15）和覆盖抛光止挡件的抛光对象层（10）的基板上进行的化学机械抛光工艺中使用浆料试剂盒。 第一种水溶性浆料包括至少一种金属氧化物抛光颗粒和负离子聚合物钝化剂。 第二水溶性浆料剂包括至少一种的金属氧化物抛光颗粒和其含量小于包括在第一浆料中的钝化剂的含量的钝化剂。 第二淤浆剂的氢离子浓度（pH）高于抛光对象层的等电点且低于抛光终止体的等电点。

公开(公告)号：KR1020020066448A

公开(公告)日：2002-08-17

申请号：KR1020010006623

申请日：2001-02-10

Applicant: 삼성전자주식회사

Inventor： 이근택 ,  한용필 ,  하상록

IPC: H01L21/304

CPC classification number: B08B3/12 ,  B08B3/08 ,  Y10S134/902

Abstract: PURPOSE: A single wafer type cleaning apparatus and a method for cleaning a wafer using the same are provided to increase density of ozone in a cleaning solution and use ozone of high temperature and other cleaning solutions. CONSTITUTION: A wafer is loaded in a chamber(11). A deionized water supply portion is installed at one side of the chamber(11). The deionized water supply portion includes pure water supply sources(D1,D2), valves(V5,V9), and pure water supply lines(13a,13b). A gas injection device(15) injects a gas to the wafer. A gas supply portion supplies the gas to the gas injection device(15). The gas supply portion is formed with has supply sources(G1-G4), a gas line(17a), valves(V1-V8), a mass flow controller(MFC1-MFC5), gas measuring gauges(G1,G2), and a mixer(17b). The mixer(17b) supplies a mixed gas to the gas injection device(15).

Abstract translation: 目的：提供单晶片型清洁装置和使用其的晶片清洁方法，以增加清洁溶液中的臭氧的密度，并使用高温和其它清洁溶液的臭氧。 构成：将晶片装载在腔室（11）中。 去离子水供应部分安装在腔室（11）的一侧。 去离子水供给部包括纯水供给源（D1，D2），阀（V5，V9）和纯水供给管路（13a，13b）。 气体注入装置（15）将气体注入到晶片。 气体供给部将气体供给到气体注入装置（15）。 气体供给部分形成有供给源（G1-G4），气体管线（17a），阀（V1-V8），质量流量控制器（MFC1-MFC5），气体测量计（G1，G2）和 混合器（17b）。 混合器（17b）向气体注入装置（15）供应混合气体。

公开(公告)号：KR1019940003557B1

公开(公告)日：1994-04-23

申请号：KR1019910020513

申请日：1991-11-18

Applicant: 삼성전자주식회사

Inventor： 이남표 ,  박승호 ,  황인석 ,  한용필

IPC: H01L21/306

Abstract: The method uses a washing solution prepared by mixing 1 wt% of ammonium fluoride and with 10-1,000 wt% of acetic acid to remove polymer produced on a semiconductor substrate as a by-product to improve reliance of semiconductor device.

Abstract translation: 该方法使用通过混合1重量％的氟化铵和10-1,000重量％的乙酸制备的洗涤溶液，以除去作为副产物的在半导体衬底上产生的聚合物，以改善半导体器件的依赖性。

公开(公告)号：KR100442869B1

公开(公告)日：2004-08-02

申请号：KR1020020006045

申请日：2002-02-02

Applicant: 삼성전자주식회사

Inventor： 한동균 ,  이근택 ,  한용필 ,  고형호

IPC: H01L21/304

CPC classification number: H01L21/31138 ,  B08B7/00 ,  H01L21/67028 ,  H01L21/67763

Abstract: An apparatus for cleaning a semiconductor wafer includes a cleaning reaction chamber wherein the cleaning process is performed in a closed state, a wafer conveyor having wafer supporters for loading semiconductor onto a loading unit within the reaction chamber, at least one cleaning gas supply unit for supplying at least one cleaning solution in a vapor state into the reaction chamber, a water vaporizing unit for supplying vapor onto the semiconductor wafers, an ozone supply unit for supplying ozone gas into the reaction chamber, and a reaction gas exhaustion unit connected to the reaction chamber in order to exhaust the cleaning gas from the reaction chamber. The cleaning of the semiconductor wafers by adding cleaning gas and ozone gas into a reaction chamber easily removes any remaining photoresist that formed on the semiconductor wafers and any other contaminates from pre-processes.

Abstract translation: 一种用于清洁半导体晶片的设备包括：清洁反应室，其中清洁过程在关闭状态下进行;晶片传送器，具有用于将半导体加载到反应室内的加载单元上的晶片支撑件;至少一个清洁气体供应单元， 至少一种处于蒸气状态的清洁溶液进入反应室，用于将蒸气供应到半导体晶片上的水蒸发单元，用于将臭氧气体供应到反应室中的臭氧供应单元以及连接到反应室的反应气体排出单元 以从反应室中排出清洁气体。 通过将清洁气体和臭氧气体添加到反应室中来清洁半导体晶片容易地去除在半导体晶片上形成的任何剩余的光致抗蚀剂以及来自预处理的任何其他污染物。

公开(公告)号：KR100416590B1

公开(公告)日：2004-02-05

申请号：KR1020010002065

申请日：2001-01-13

Applicant: 삼성전자주식회사

Inventor： 박임수 ,  이근택 ,  한용필 ,  하상록

IPC: H01L21/304

CPC classification number: H01L21/67115 ,  B08B3/04 ,  B08B7/0071 ,  H01L21/67051 ,  Y10S134/902

Abstract: An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, and a light source. The cleaning solution, preferably one of ozone water, hydrogen water, or electrolytic-ionized water, may be heated for a short time and used to clean the wafer.

Abstract translation: 一种用于清洁半导体晶片的设备和使用该设备清洁晶片的方法，其中，该设备包括其上安装有晶片的腔室，安装在腔室中用于支撑和固定晶片的旋转卡盘，用于喷射清洁溶液的喷嘴 到晶片上，用于覆盖腔室上部的盖和光源。 清洁溶液，优选臭氧水，氢气水或电解离子水中的一种可以短时间加热并用于清洁晶片。

公开(公告)号：KR1020030065953A

公开(公告)日：2003-08-09

申请号：KR1020020006045

申请日：2002-02-02

Applicant: 삼성전자주식회사

Inventor： 한동균 ,  이근택 ,  한용필 ,  고형호

IPC: H01L21/304

CPC classification number: H01L21/31138 ,  B08B7/00 ,  H01L21/67028 ,  H01L21/67763

Abstract: PURPOSE: A semiconductor fabrication apparatus for a semiconductor substrate cleaning process and a cleaning process using the same are provided to remove easily a hardened photoresist part by mixing a gasified cleaning solution with ozone. CONSTITUTION: A semiconductor fabrication apparatus for semiconductor substrate cleaning process includes a cleaning process chamber(110), a cleaning gas supply portion(120), an ozone supply portion(130), a steam supply portion(125), and a reaction gas exhaust portion(140). The cleaning process chamber has a substrate loading portion(111) for loading a semiconductor substrate(100) to perform a cleaning process in an airtight state. The cleaning gas supply portion supplies a cleaning solution of a gas state. The ozone supply portion supplies ozone to the cleaning process chamber. The steam supply portion supplies the steam to the cleaning process chamber. The process gas exhaust portion is connected to the process chamber in order to exhaust the cleaning gas.

Abstract translation: 目的：提供一种用于半导体衬底清洗工艺的半导体制造装置和使用该半导体衬底清洁工艺的清洁工艺，以通过将气化的清洁溶液与臭氧混合来容易地除去硬化的光致抗蚀剂部件。 构成：用于半导体衬底清洁工艺的半导体制造装置包括清洁处理室（110），清洁气体供应部分（120），臭氧供应部分（130），蒸汽供应部分（125）和反应气体排出 部分（140）。 清洁处理室具有用于加载半导体基板（100）以进行气密状态的清洁处理的基板装载部（111）。 清洁气体供给部供给气体状态的清洗液。 臭氧供应部分向清洗处理室提供臭氧。 蒸汽供应部分将蒸汽供应到清洁处理室。 过程气体排出部分连接到处理室以排出清洁气体。