公开(公告)号：KR1020040040076A

公开(公告)日：2004-05-12

申请号：KR1020020068397

申请日：2002-11-06

Applicant: 삼성전자주식회사

Inventor： 홍상균 ,  김찬일

IPC: H01L21/20

Abstract: PURPOSE: A physical vapor deposition apparatus for manufacturing a semiconductor chip is provided to prevent a target from being damaged due to the inflow of outer air by using a pump system. CONSTITUTION: A physical vapor deposition apparatus(200) is provided with a chamber(210), a target source part(220) for loading a target, and a pump system(250) for conserving the vacuum state of the target source part while the chamber is separated. Preferably, the pump system further includes a pipe line(252) connected to the target source part for supplying vacuum pressure, a vacuum pump(254) for generating the vacuum pressure, a valve(256) for controlling the vacuum pressure supplied to the target source part, and a vacuum gauge(258) for measuring the degree of vacuum of the target source part.

Abstract translation: 目的：提供一种用于制造半导体芯片的物理气相沉积设备，以防止由于使用泵系统而导致的外部空气流入而导致目标物体损坏。 构成：物理气相沉积装置（200）设置有室（210），用于装载目标的目标源部分（220）和用于保持目标源部分的真空状态的泵系统（250），同时 室分离。 优选地，泵系统还包括连接到用于提供真空压力的目标源部分的管道（252），用于产生真空压力的真空泵（254），用于控制供应给目标物的真空压力的阀（256） 源部分和用于测量目标源部分的真空度的真空计（258）。

公开(公告)号：KR1020000008055A

公开(公告)日：2000-02-07

申请号：KR1019980027701

申请日：1998-07-09

Applicant: 삼성전자주식회사

Inventor： 장대근 ,  문수민 ,  이용위 ,  홍상균

IPC: H01L21/324

Abstract: PURPOSE: A semiconductor wafer annealing apparatus is provided to improve a uniformity of heat treatment of the wafer by heating sides of wafer using a side heating ramp. CONSTITUTION: The annealing apparatus comprises an upper heating ramp(4) for heating an upper surface of a wafer(2) loaded in an annealing chamber(1) by irradiating lights; and a side heating ramp(5) for heating both sides of the wafer(2) by irradiating lights. The wafer(2) is horizontally rotating by a spinner(3). The side heating ramp(5) is made of a pair of halogen ramp. The upper heating ramp(4) includes a plurality of unit ramps(6).

Abstract translation: 目的：提供半导体晶片退火装置，通过使用侧面加热斜面加热晶片的侧面来提高晶片的热处理的均匀性。 构成：退火装置包括用于通过照射光来加载装载在退火室（1）中的晶片（2）的上表面的上加热斜面（4） 和用于通过照射光来加热晶片（2）两侧的侧面加热斜面（5）。 晶片（2）由旋转器（3）水平旋转。 侧加热斜面（5）由一对卤素斜面制成。 上加热斜坡（4）包括多个单位斜坡（6）。

公开(公告)号：KR1020040100755A

公开(公告)日：2004-12-02

申请号：KR1020030033213

申请日：2003-05-24

Applicant: 삼성전자주식회사

Inventor： 홍상균 ,  김찬일 ,  최정호

IPC: H01L21/20

Abstract: PURPOSE: A semiconductor device manufacturing system and a method of controlling temperature of a substrate using the same are provided to obtain an excellent film without an additional apparatus by performing metal film forming and cooling processes at the same temperature using one cooling solution supply part. CONSTITUTION: A semiconductor device manufacturing system includes a substrate transfer chamber(210), a plurality of process chambers(220) connected with the transfer chamber, and a cooling chamber(240) connected with the transfer chamber. A substrate holder with a first cooling solution storage part is installed in the process chamber. A cooling plate with a second cooling solution storage part is installed in the cooling chamber. A cooling solution supply part(280) is simultaneously connected with the first and second cooling solution storage parts.

Abstract translation: 目的：提供半导体器件制造系统和使用其的基板的温度控制方法，以通过使用一个冷却溶液供应部在相同温度下进行金属成膜和冷却工艺而不需要附加装置来获得优异的膜。 构成：半导体器件制造系统包括衬底传送室（210），与传送室连接的多个处理室（220）和与传送室连接的冷却室（240）。 具有第一冷却溶液存储部的基板保持器安装在处理室中。 具有第二冷却溶液存储部的冷却板安装在冷却室中。 冷却溶液供给部件（280）同时与第一和第二冷却溶液存储部连接。

公开(公告)号：KR1020040078241A

公开(公告)日：2004-09-10

申请号：KR1020030013065

申请日：2003-03-03

Applicant: 삼성전자주식회사

Inventor： 김찬일 ,  홍상균

IPC: C23C14/34

CPC classification number: C23C14/50 ,  B05B7/222 ,  C23C4/08 ,  C23C4/131

Abstract: PURPOSE: A ceramic ring for physical deposition equipment is provided on which a buffer film is formed so that a Ta film is deposited very well on the ceramic ring in a process of depositing the Ta film on a wafer. CONSTITUTION: In a ceramic ring(50) for physical deposition equipment for proceeding Ta deposition process, the ceramic ring for physical deposition equipment comprises a ring shaped ceramic body part(52); and a buffer film(54) coated on the ceramic body part so that a Ta deposition film is uniformly deposited on the ceramic body part in the Ta deposition process, wherein the buffer film is formed by Al arc spray method.

Abstract translation: 目的：提供一种用于物理沉积设备的陶瓷环，在其上形成缓冲膜，以便在将Ta膜沉积在晶片上的过程中，使Ta膜非常好地沉积在陶瓷环上。 构成：在用于进行Ta沉积工艺的物理沉积设备的陶瓷环（50）中，用于物理沉积设备的陶瓷环包括环形陶瓷体部分（52）; 以及涂覆在陶瓷体部分上的缓冲膜（54），以使Ta沉积膜在Ta沉积工艺中均匀地沉积在陶瓷体部分上，其中缓冲膜通过Al电弧喷涂法形成。

公开(公告)号：KR1020060023363A

公开(公告)日：2006-03-14

申请号：KR1020040072183

申请日：2004-09-09

Applicant: 삼성전자주식회사

Inventor： 홍상균 ,  이종수 ,  연경진 ,  윤대화

IPC: H01L21/203

CPC classification number: H01L21/687 ,  C23C14/34 ,  H01L21/67109

Abstract: 반도체 제조 설비가 제공된다. 상기 반도체 제조 설비는 공정 챔버, 공정 챔버 내부에 설치되고 웨이퍼가 위치하는 웨이퍼 척, 웨이퍼 척을 소정의 온도 이하로 냉각시키는 냉각 장치, 웨이퍼 척 내부에 가스를 분사하여 웨이퍼 척 내부의 공기를 퍼지하는 수분 발생 억제 장치를 포함한다.
PVD, 스퍼터링(sputtering), 척(chuck), 수분, 불활성 가스

公开(公告)号：KR1020000021731A

公开(公告)日：2000-04-25

申请号：KR1019980040980

申请日：1998-09-30

Applicant: 삼성전자주식회사

Inventor： 장대근 ,  홍상균

IPC: H01L21/00

Abstract: PURPOSE: A semiconductor processing apparatus with a floppy disk driver is provided to shorten the distance an operator moves by detaching the floppy disk driver from a control unit and establishing the driver within the scope of the operator's approach. CONSTITUTION: A semiconductor processing apparatus with a floppy disk driver comprises: a furnace in which a semiconductor process is performed; a control unit for controlling the semiconductor process in the furnace; an input/output unit connected to the control unit; a connection cable for connecting the control unit with the input/output unit; and a floppy disk driver established in the input/output unit.

Abstract translation: 目的：提供具有软盘驱动器的半导体处理装置，以通过将软盘驱动器与控制单元分离并将驾驶员建立在操作者的方法范围内来缩短操作者移动的距离。 构成：具有软盘驱动器的半导体处理装置包括：进行半导体处理的炉; 用于控制炉中的半导体工艺的控制单元; 连接到控制单元的输入/输出单元; 用于将控制单元与输入/输出单元连接的连接电缆; 以及在输入/输出单元中建立的软盘驱动器。