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公开(公告)号：KR1020070025628A
公开(公告)日：2007-03-08
申请号：KR1020050081996
申请日：2005-09-03
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: G01N13/10
Abstract: A semiconductor probe with a resistive tip of high resolution and a method of fabricating the same are provided to improve resolution of a resistive region by forming conductive regions at both sides of the resistive region. A semiconductor probe with a resistive tip of high resolution includes a cantilever(170), and first and second electrode regions(132,134). The cantilever is doped with first impurities, and has a resistive tip doped with second impurities having a polarity opposite to the first impurities at a low concentration and projects from its distal end. The first and second electrode regions are disposed at both sides of the resistive tip of the cantilever and doped with the second impurities. The resistive tip is a rectangular column with a diameter of 100nm or less. The diameter of resistive tip is 14-50nm.
Abstract translation: 提供具有高分辨率的电阻尖端的半导体探针及其制造方法，以通过在电阻区域的两侧形成导电区域来改善电阻区域的分辨率。 具有高分辨率的电阻尖端的半导体探针包括悬臂（170）和第一和第二电极区（132,134）。 悬臂掺杂有第一杂质，并且具有掺杂有低浓度的与第一杂质极性相反极性的第二杂质的电阻尖端并从其远端突出。 第一和第二电极区域设置在悬臂的电阻尖端的两侧并掺杂有第二杂质。 电阻尖是直径为100nm以下的矩形柱。 电阻尖的直径为14-50nm。
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公开(公告)号：KR100790893B1
公开(公告)日：2008-01-03
申请号：KR1020060102467
申请日：2006-10-20
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: H01L21/66
CPC classification number: G01Q60/30
Abstract: A semiconductor probe having an embossed resistive tip and a method for fabricating the same are provided to prevent damage thereof by using low energy in an ion implantation process. A protrusive part(172) is protruded from a cantilever(170). An embossed resistive tip(130) is formed on the protrusive part. A first electrode region(132) and a second electrode region(134) are formed at both sides of the embossed resistive tip at the protrusive part. The cantilever is doped with a first impurity. The first electrode region, the second electrode region, and the embossed resistive tip are doped with a second impurity having polarity different from the polarity of the first impurity. The doping density of the embossed resistive tip is lower than that of the first and second electrode regions.
Abstract translation: 提供具有压花电阻端头的半导体探针及其制造方法，以通过在离子注入工艺中使用低能量来防止其损坏。 突出部分（172）从悬臂（170）突出。 在凸出部分上形成压花电阻头（130）。 第一电极区域（132）和第二电极区域（134）形成在凸出部分的压花电阻端头的两侧。 悬臂掺杂有第一杂质。 第一电极区域，第二电极区域和压电电阻尖端掺杂有极性不同于第一杂质极性的第二杂质。 压花电阻尖端的掺杂密度低于第一和第二电极区域的掺杂浓度。
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公开(公告)号：KR100785006B1
公开(公告)日：2007-12-12
申请号：KR1020050081996
申请日：2005-09-03
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: G01N13/10
Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
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公开(公告)号：KR100738098B1
公开(公告)日：2007-07-12
申请号：KR1020060003934
申请日：2006-01-13
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: H01L21/66
Abstract: A semiconductor probe and a manufacturing method thereof are provided to keep the resolution of a resistive region and improve sensitivity by forming easily a conductive region in spite of a narrow width of a resistive tip using a doping control layer. A semiconductor probe includes a cantilever(21) doped with first dopants, a resistive tip, a doping control layer and first and second electrode regions. The resistive tip is protruded from an end portion of the cantilever. The resistive tip is lightly doped with second dopants. The doping control layer(25) is formed at both sides of the resistive tip. The first and second electrode regions(22,23) are formed at a lower portion of the doping control layer and both sides of the resistive tip, respectively. The first and second electrode regions are heavily doped with the second dopants.
Abstract translation: 提供一种半导体探针及其制造方法，通过使用掺杂控制层，尽管电阻性尖端的宽度变窄，但容易形成导电性区域，从而保持电阻性区域的分辨率并提高灵敏度。 半导体探针包括掺杂有第一掺杂剂的悬臂（21），电阻尖端，掺杂控制层以及第一和第二电极区域。 阻力尖端从悬臂的端部突出。 电阻尖端轻掺杂第二掺杂剂。 掺杂控制层（25）形成在电阻性尖端的两侧。 第一和第二电极区（22,23）分别形成在掺杂控制层的下部和电阻性尖端的两侧。 第一和第二电极区用第二掺杂剂重掺杂。
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公开(公告)号：KR1020140010720A
公开(公告)日：2014-01-27
申请号：KR1020120077368
申请日：2012-07-16
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/78696 , B82Y10/00 , H01L29/1095 , H01L29/1606 , H01L29/66045 , H01L29/66477 , H01L29/78 , H01L29/78684 , Y10S977/734 , Y10S977/842 , Y10S977/938
Abstract: The present invention relates to a high-performance field effect transistor including a graphene channel layer. According to one embodiment of the present invention, the field effect transistor includes: a substrate; a grapheme channel layer which is placed on the substrate and includes a slit; a source electrode and a drain electrode which apply a voltage to the graphene channel layer and are placed at an interval; a gate electrode which forms an electric field in the graphene channel layer; and a gate insulation layer which is placed between the graphene channel layer and the gate electrode.
Abstract translation: 本发明涉及包括石墨烯通道层的高性能场效应晶体管。 根据本发明的一个实施例，场效应晶体管包括：衬底; 一个放置在基片上并包括狭缝的图形通道层; 源极电极和漏电极，其对石墨烯沟道层施加电压并以一定间隔放置; 在所述石墨烯沟道层中形成电场的栅电极; 以及位于石墨烯通道层和栅电极之间的栅极绝缘层。
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Patent Agency Ranking
公开(公告)号：KR1020060106306A
公开(公告)日：2006-10-12
申请号：KR1020050028912
申请日：2005-04-07
Applicant: 삼성전자주식회사
Inventor： 신형철
IPC: G03G15/20
CPC classification number: G03G15/205 , G03G15/2064
Abstract: 본 발명은 정착기에 관한 것으로서, 인쇄용지를 가압하는 프레싱롤러를 포함하는 정착기에 있어서, 상기 인쇄용지를 사이에 두고 상기 프레싱롤러와 대향되게 회전하는 중공의 히팅롤러본체와; 상기 히팅롤러본체의 내벽면에 접촉 가능하도록 수용되고 상기 히팅롤러와 일체로 회전하면서 상기 히팅롤러본체를 열전도방식으로 가열하는 가열램프와; 상기 가열램프는 일단에 전극을 포함하고 상기 전극에 전원을 공급하는 브러쉬를 포함하는 전원공급부를 포함하는 것을 특징으로 한다. 이에 의해 정착기의 예열시간을 단축시키고 열손실을 줄여 소비전력을 줄일 수 있다.
정착기, 히팅롤러, 가열램프, 일체, 전도-
公开(公告)号：KR101910976B1
公开(公告)日：2018-10-23
申请号：KR1020120077368
申请日：2012-07-16
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/78696 , B82Y10/00 , H01L29/1095 , H01L29/1606 , H01L29/66045 , H01L29/66477 , H01L29/78 , H01L29/78684 , Y10S977/734 , Y10S977/842 , Y10S977/938
Abstract: 본개시는그래핀채널층을포함하는고성능전계효과트랜지스터에관한것이다. 본발명의일 실시예에따르면기판과, 상기기판상에마련되며슬릿을구비하고있는그래핀채널층과, 상기그래핀채널층에전압을인가하기위해마련되며서로이격되어형성되는소스전극과드레인전극과, 상기그래핀채널층에전계를형성하기위해마련되는게이트전극및 상기그래핀채널층과상기게이트전극사이에마련되는게이트절연층을포함하는전계효과트랜지스터를제공할수 있다.
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公开(公告)号：KR1020120048241A
公开(公告)日：2012-05-15
申请号：KR1020100109778
申请日：2010-11-05
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/1606 , H01L29/41758 , H01L29/66477 , H01L29/778 , H01L29/66431
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve applicability of a high speed operation element by forming an inter layer dielectric and a gate insulating layer by using different material. CONSTITUTION: A gate electrode(12) is formed on a substrate(10). The gate electrode comprises a projected gate finger. A gate insulating layer(13) is formed on the gate electrode. An inter-layer insulating film(11) is formed on the side of the gate insulating layer and the gate electrode. The inter-layer insulating film comprises a material having dielectric permittivity lower than the gate insulating layer. A graphene layer(14) is formed on the gate insulating layer and the inter-layer insulating film. A source(15a) and a drain(15b) are formed on the graphene layer. Graphene is formed in the lower side of the graphene layer between the source and drain.
Abstract translation: 目的：提供半导体器件及其制造方法，以通过使用不同的材料形成层间电介质和栅绝缘层来提高高速工作元件的适用性。 构成：在基板（10）上形成栅电极（12）。 栅极电极包括投影的栅极指状物。 栅极绝缘层（13）形成在栅电极上。 在栅极绝缘层和栅电极的一侧形成层间绝缘膜（11）。 层间绝缘膜包括具有低于栅极绝缘层的介电常数的材料。 在栅极绝缘层和层间绝缘膜上形成石墨烯层（14）。 源极（15a）和漏极（15b）形成在石墨烯层上。 在源极和漏极之间的石墨烯层的下侧形成石墨烯。
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9.发明公开
公开(公告)号：KR1020090059420A
公开(公告)日：2009-06-11
申请号：KR1020070126275
申请日：2007-12-06
CPC classification number: H04W74/02 , H04B7/2603 , H04W72/12 , H04W74/002
Abstract: A method for transmitting and receiving random access response information in a radio communication system, a base station device and a terminal unit thereof are provided to support the variable and flexible management for the wireless resources of a physical layer by configuring response information when utilizing or allocating radio resources. A terminal transmits a random access preamble to a base station(S101). When the base station detects the access preamble transmitted from the terminal, the base station transmits a response message including the sequence to the terminal(S103). The terminal transmits setup request information to the base station by using uplink radio resource allocation information(S105), and the base station transmits the response control information for the setup request information(S107).
Abstract translation: 提供了一种用于在无线电通信系统，基站设备及其终端单元中发送和接收随机接入响应信息的方法，以通过在利用或分配时配置响应信息来支持对物理层的无线资源的可变和灵活的管理 无线电资源。 终端向基站发送随机接入前导码（S101）。 当基站检测到从终端发送的接入前导码时，基站向终端发送包括该序列的响应消息（S103）。 终端通过使用上行链路无线资源分配信息向基站发送建立请求信息（S105），基站发送建立请求信息的响应控制信息（S107）。
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公开(公告)号：KR100765263B1
公开(公告)日：2007-10-09
申请号：KR1020060079437
申请日：2006-08-22
Applicant: 삼성전자주식회사
Inventor： 신형철
CPC classification number: H04N1/00559 , H04N1/00564
Abstract: An image forming apparatus having a cover upward supporting device is provided to increase the convenience of a user by downward approaching a cover to a body without additional operation only when the user presses the cover separated and lifted. A base(200) is formed in either a body(120) or a cover. A guidance pin(330) is formed in one of the base and a lifting member(310). A guidance pin guide(340), formed in either the base(200) or the lifting member(310) which does not have the base, contains the guidance pin(330). The guidance pin guide(340) rotatably guides the lifting member(310) to a standing position for supporting the cover when it is separated from the body(120) and a bend position bent when the body(120) of the cover is approached. When the lifting member(310) of the standing position is downward pressurized, a bend guide(350) interacts with the lifting member(310) and bends and rotates the lifting member(310).
Abstract translation: 提供一种具有盖向上支撑装置的图像形成装置，用于仅当使用者按压分离和提起的盖时，通过向下靠近主体而不需要额外的操作来增加使用者的便利性。 底座（200）形成在主体（120）或盖中。 引导销（330）形成在基座和提升构件（310）中的一个中。 形成在不具有基座的底座（200）或提升构件（310）中的引导销引导件（340）包含引导销（330）。 引导销引导件（340）在提升构件（310）与主体（120）分离时可旋转地引导提升构件（310）到用于支撑盖子的站立位置，并且当盖子的主体（120）接近时弯曲的弯曲位置。 当竖立位置的提升构件（310）被向下加压时，弯曲引导件（350）与提升构件（310）相互作用并弯曲和旋转提升构件（310）。
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