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公开(公告)号：KR100785006B1
公开(公告)日：2007-12-12
申请号：KR1020050081996
申请日：2005-09-03
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: G01N13/10
Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
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公开(公告)号：KR100738098B1
公开(公告)日：2007-07-12
申请号：KR1020060003934
申请日：2006-01-13
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: H01L21/66
Abstract: A semiconductor probe and a manufacturing method thereof are provided to keep the resolution of a resistive region and improve sensitivity by forming easily a conductive region in spite of a narrow width of a resistive tip using a doping control layer. A semiconductor probe includes a cantilever(21) doped with first dopants, a resistive tip, a doping control layer and first and second electrode regions. The resistive tip is protruded from an end portion of the cantilever. The resistive tip is lightly doped with second dopants. The doping control layer(25) is formed at both sides of the resistive tip. The first and second electrode regions(22,23) are formed at a lower portion of the doping control layer and both sides of the resistive tip, respectively. The first and second electrode regions are heavily doped with the second dopants.
Abstract translation: 提供一种半导体探针及其制造方法，通过使用掺杂控制层，尽管电阻性尖端的宽度变窄，但容易形成导电性区域，从而保持电阻性区域的分辨率并提高灵敏度。 半导体探针包括掺杂有第一掺杂剂的悬臂（21），电阻尖端，掺杂控制层以及第一和第二电极区域。 阻力尖端从悬臂的端部突出。 电阻尖端轻掺杂第二掺杂剂。 掺杂控制层（25）形成在电阻性尖端的两侧。 第一和第二电极区（22,23）分别形成在掺杂控制层的下部和电阻性尖端的两侧。 第一和第二电极区用第二掺杂剂重掺杂。
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公开(公告)号：KR100790893B1
公开(公告)日：2008-01-03
申请号：KR1020060102467
申请日：2006-10-20
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: H01L21/66
CPC classification number: G01Q60/30
Abstract: A semiconductor probe having an embossed resistive tip and a method for fabricating the same are provided to prevent damage thereof by using low energy in an ion implantation process. A protrusive part(172) is protruded from a cantilever(170). An embossed resistive tip(130) is formed on the protrusive part. A first electrode region(132) and a second electrode region(134) are formed at both sides of the embossed resistive tip at the protrusive part. The cantilever is doped with a first impurity. The first electrode region, the second electrode region, and the embossed resistive tip are doped with a second impurity having polarity different from the polarity of the first impurity. The doping density of the embossed resistive tip is lower than that of the first and second electrode regions.
Abstract translation: 提供具有压花电阻端头的半导体探针及其制造方法，以通过在离子注入工艺中使用低能量来防止其损坏。 突出部分（172）从悬臂（170）突出。 在凸出部分上形成压花电阻头（130）。 第一电极区域（132）和第二电极区域（134）形成在凸出部分的压花电阻端头的两侧。 悬臂掺杂有第一杂质。 第一电极区域，第二电极区域和压电电阻尖端掺杂有极性不同于第一杂质极性的第二杂质。 压花电阻尖端的掺杂密度低于第一和第二电极区域的掺杂浓度。
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公开(公告)号：KR1020070025628A
公开(公告)日：2007-03-08
申请号：KR1020050081996
申请日：2005-09-03
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: G01N13/10
Abstract: A semiconductor probe with a resistive tip of high resolution and a method of fabricating the same are provided to improve resolution of a resistive region by forming conductive regions at both sides of the resistive region. A semiconductor probe with a resistive tip of high resolution includes a cantilever(170), and first and second electrode regions(132,134). The cantilever is doped with first impurities, and has a resistive tip doped with second impurities having a polarity opposite to the first impurities at a low concentration and projects from its distal end. The first and second electrode regions are disposed at both sides of the resistive tip of the cantilever and doped with the second impurities. The resistive tip is a rectangular column with a diameter of 100nm or less. The diameter of resistive tip is 14-50nm.
Abstract translation: 提供具有高分辨率的电阻尖端的半导体探针及其制造方法，以通过在电阻区域的两侧形成导电区域来改善电阻区域的分辨率。 具有高分辨率的电阻尖端的半导体探针包括悬臂（170）和第一和第二电极区（132,134）。 悬臂掺杂有第一杂质，并且具有掺杂有低浓度的与第一杂质极性相反极性的第二杂质的电阻尖端并从其远端突出。 第一和第二电极区域设置在悬臂的电阻尖端的两侧并掺杂有第二杂质。 电阻尖是直径为100nm以下的矩形柱。 电阻尖的直径为14-50nm。
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公开(公告)号：KR102026132B1
公开(公告)日：2019-09-27
申请号：KR1020180025833
申请日：2018-03-05
Applicant: 삼성전자주식회사
IPC: H01L25/065 , H01L23/485 , H01L23/00 , H01L23/48 , H01L23/522 , H01L23/28
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Patent Agency Ranking
公开(公告)号：KR1020140043653A
公开(公告)日：2014-04-10
申请号：KR1020130005210
申请日：2013-01-17
Applicant: 삼성전자주식회사
IPC: H04N5/374
CPC classification number: H04N5/37457 , H01L27/14605 , H01L27/14614 , H01L27/14616 , H01L27/1463 , H01L27/14643
Abstract: An image sensor is disclosed. The image sensor according to an embodiment of the present invention includes: a pixel array which is composed of multiple unit pixels which respectively include a single transistor and a photodiode which is connected with the body of the single transistor; a low driver block which makes any one of multiple rows of the pixel array to enter a lead-out mode; and a sense amplifier block which senses and amplifies each of pixel signals which are outputted from multiple unit pixels included in a row which enters the lead-out mode. The row driver block controls the source voltage and gate voltage of single transistors which are included in any one among the rows of the pixel array and makes the source voltage and the gate voltage to enter the lead-out mode. According to the embodiment of the present invention, the image sensor is able to increase the integration degree of the image sensor by including only one transistor and one photodiode per unit pixel.
Abstract translation: 公开了一种图像传感器。 根据本发明的实施例的图像传感器包括：由分别包括单个晶体管的多个单位像素和与单个晶体管的主体连接的光电二极管组成的像素阵列; 使得像素阵列的多行中的任一个进入引出模式的低驱动器块; 以及感测放大器块，其感测和放大从包括在进入导出模式的行中的多个单位像素输出的每个像素信号。 行驱动器块控制包括在像素阵列中的任一行中的单个晶体管的源极电压和栅极电压，并使源极电压和栅极电压进入导出模式。 根据本发明的实施例，图像传感器能够通过每单位像素仅包括一个晶体管和一个光电二极管来增加图像传感器的积分度。
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公开(公告)号：KR1020120125097A
公开(公告)日：2012-11-14
申请号：KR1020110043178
申请日：2011-05-06
Applicant: 삼성전자주식회사
CPC classification number: G01J1/4228 , G01B11/22 , G01S7/4816 , G01S7/4861 , G01S17/89 , H01L27/14603 , H04N5/3696 , H04N5/3745
Abstract: PURPOSE: A distance measuring sensor of a time-of-flight method and a semiconductor with the same are provided to reduce sensing errors when measuring a distance and to minimize effects of a field to an actuating region caused by a non-actuating region. CONSTITUTION: A distance measuring sensor of a time-of-flight method and a semiconductor with the same comprise a light receiving region(11) and sensing regions(13a,13b) The light receiving region photoelectrical-converts received optical signals, thereby outputting as electrical signals. The sensing region is arranged adjacent to the light receiving region and receives electrical signals from the light receiving region. First and second virtual lines are perpendicular to each other and pass through a center of the light receiving region. The sensing region is arranged to have an angle more than 0 degree with the first virtual line.
Abstract translation: 目的：提供飞行时间方法的距离测量传感器及其半导体距离测量传感器，以便在测量距离时减少感测误差，并尽可能减少由非致动区域引起的对致动区域的影响。 构成：飞行时间法的距离测量传感器及其半导体具有光接收区域（11）和感测区域（13a，13b）。光接收区域对接收的光信号进行光电转换，从而输出为 电信号。 感测区域布置成与光接收区域相邻并且从光接收区域接收电信号。 第一虚拟线和第二虚拟线彼此垂直并穿过光接收区域的中心。 感测区域被布置成与第一虚拟线具有大于0度的角度。
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公开(公告)号：KR1020120107755A
公开(公告)日：2012-10-04
申请号：KR1020110025467
申请日：2011-03-22
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H04N5/359
CPC classification number: H01L27/14607 , H01L27/14603 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14645 , H01L27/1465 , H01L27/14689
Abstract: PURPOSE: A pixel array for an image sensor and a method for manufacturing the pixel array are provided to reduce interference between a color pixel and a distance pixel by forming a cut-off region in a lower portion of a photo diode of the color pixel. CONSTITUTION: A color pixel provides color image information. A distance pixel(Z) provides distance information. A pixel pattern(105) comprises a red pixel(R), a greed pixel(G), a blue pixel(B), and the distance pixel. The color pixel includes a first photo diode and a cut-off region collecting electrons. The cut-off region prevents photo-charges from being generated by second wavelength light from entering a first photo diode.
Abstract translation: 目的：提供用于图像传感器的像素阵列和用于制造像素阵列的方法，以通过在彩色像素的光电二极管的下部形成截止区域来减少彩色像素与距离像素之间的干扰。 构成：彩色像素提供彩色图像信息。 距离像素（Z）提供距离信息。 像素图案（105）包括红色像素（R），贪心像素（G），蓝色像素（B）和距离像素。 彩色像素包括第一光电二极管和收集电子的截止区域。 截止区域防止由第二波长光进入第一光电二极管产生光电荷。
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公开(公告)号：KR1020110081703A
公开(公告)日：2011-07-14
申请号：KR1020100001994
申请日：2010-01-08
Applicant: 삼성전자주식회사
CPC classification number: B65H1/266 , B65H7/14 , B65H2511/10 , B65H2511/22 , B65H2515/702 , B65H2553/414 , B65H1/04 , B65H2301/442 , B65H2402/80 , B65H2403/41 , B65H2404/74 , B65H2405/11 , B65H2553/41 , B65H2801/03 , B65H2220/01 , B65H2220/02 , B65H2220/03
Abstract: PURPOSE: A paper loading device, paper feeding device, image forming device and a control method thereof are provided to detect the size of paper according to a sensing voltage which is output from a sensor. CONSTITUTION: A paper loading device comprises a paper loader(220), a paper guide, an light reflecting part(212), a sensor part(250). The paper guide controls location according to the width of the paper. The paper guide guides the right and left sections of the paper which is loaded on the paper loader to a feeding direction. The sensor part receives light which is outputted from the light reflecting part in order to calculate the size of the paper. The sensor part outputs the sensing voltage according to the input light.
Abstract translation: 目的：提供纸张装载装置，给纸装置，图像形成装置及其控制方法，以根据从传感器输出的感测电压来检测纸张的尺寸。 构成：纸张装载装置包括纸张装载机（220），纸张引导件，光反射部分（212），传感器部分（250）。 纸张导轨根据纸张的宽度控制位置。 纸张导向器将装载在纸张装载机上的纸张的左右两部分引导到进纸方向。 传感器部分接收从光反射部分输出的光，以计算纸张的尺寸。 传感器部分根据输入光输出感测电压。
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公开(公告)号：KR100905720B1
公开(公告)日：2009-07-01
申请号：KR1020070071286
申请日：2007-07-16
Applicant: 삼성전자주식회사
IPC: G11B5/127
CPC classification number: G11B9/02 , G11B5/6082 , H01L29/78
Abstract: 전계 재생/기록 헤드와 그의 제조방법 및 전계 재생/기록 헤드를 포함한 정보 저장 장치에 대해 개시되어 있다. 개시된 본 발명의 전계 재생/기록 헤드는, 기판 내에 형성된 것으로서, 기록 매체와 대향하는 끝면을 갖는 저항영역, 상기 저항영역 양측의 상기 기판 내에 각각 형성된 소오스 및 드레인, 및 상기 저항영역 상에 차례로 구비된 절연층 및 쓰기전극을 포함하되, 상기 저항영역의 길이(ℓ)와 폭(w)은 (ℓ/w)≥0.2를 만족하는 것을 특징으로 하는 전계 재생/기록 헤드를 제공한다.
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