公开(公告)号：KR101304036B1

公开(公告)日：2013-09-04

申请号：KR1020110092782

申请日：2011-09-15

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  백경현 ,  장경수 ,  최우진 ,  안시현 ,  조재현 ,  유경열

IPC: H01B5/14 ,  H01B13/00 ,  H01L29/786 ,  G06F3/041

Abstract: 전극 구조는 기판, 투명 전극층 및 보강 패턴을 포함한다. 투명 전극층은 기판 상에 배치되며, 투명한 도전 물질을 포함한다. 보강 패턴은 투명 전극층 내부에 배치되며, 투명 전극층을 보강한다. 따라서, 전극 구조에 반복적인 압력이 가해지더라도 보강 패턴이 투명 전극층을 보강하므로 투명 전극층이 깨져 전극 구조의 전기적 특성이 저하되는 것을 방지할 수 있다.

公开(公告)号：KR1020110123464A

公开(公告)日：2011-11-15

申请号：KR1020100042964

申请日：2010-05-07

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  장경수 ,  박형식 ,  유경열 ,  정성욱 ,  이원백

IPC: C23C14/58 ,  C23C16/56 ,  C23C14/08

Abstract: PURPOSE: A method for improving electrical and optical properties of zinc oxide layer by using hydrogen peroxide is provided to improve quantum efficiency of solar battery by using an oxidation zinc thin film as a transparent conductive film of a solar battery. CONSTITUTION: A method for improving electrical and optical properties of zinc oxide layer by using hydrogen peroxide is as follows. An oxidation zinc thin film is dipped in the mixture of ultra-pure water and hydrogen peroxide and maintained. The oxidation zinc thin film is deposited on the top of a substrate and dipped in the mixture of ultra-pure water and hydrogen peroxide. Resistivity, transmittance and optical bandgap energy are improved. The oxidation zinc thin film is deposited on the top of the substrate as thickness of 900~1100nm. The oxidation zinc thin film is an aluminum doped oxidation zinc thin film. The oxidation zinc thin film, dipped in the mixture of the ultra-pure water and hydrogen peroxide, maintains in solution for 20~40 minutes.

Abstract translation: 目的：通过使用氧化锌薄膜作为太阳能电池的透明导电膜，提供了一种通过使用过氧化氢改善氧化锌层的电学和光学性能的方法，以提高太阳能电池的量子效率。 构成：通过使用过氧化氢改善氧化锌层的电学和光学性质的方法如下。 将氧化锌薄膜浸入超纯水和过氧化氢的混合物中并保持。 将氧化锌薄膜沉积在基材的顶部并浸渍在超纯水和过氧化氢的混合物中。 电阻率，透射率和光学带隙能量得到改善。 氧化锌薄膜沉积在基板的顶部，厚度为900〜1100nm。 氧化锌薄膜是掺铝氧化锌薄膜。 浸在超纯水和过氧化氢的混合物中的氧化锌薄膜在溶液中保持20〜40分钟。

公开(公告)号：KR1020130029503A

公开(公告)日：2013-03-25

申请号：KR1020110092782

申请日：2011-09-15

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  백경현 ,  장경수 ,  최우진 ,  안시현 ,  조재현 ,  유경열

IPC: H01B5/14 ,  H01B13/00 ,  H01L29/786 ,  G06F3/041

CPC classification number: H01B5/14 ,  G06F3/041 ,  G06F2203/04103 ,  H01B13/00 ,  H01L29/786 ,  H01L31/04 ,  H01L31/18

Abstract: PURPOSE: An electrode structure, a manufacturing method thereof, a transistor including the same, a display device, a touch screen panel, and a solar cell are provided to constantly maintain the thickness of a transparent electrode layer by inserting a reinforcement pattern into the transparent electrode layer. CONSTITUTION: A transparent electrode layer(120) includes transparent conductive materials. A reinforcement pattern(130) is arranged in the transparent electrode layer. The reinforcement pattern reinforces the transparent electrode layer. The reinforcement pattern includes one of a lattice type, a linear type, or a dot type. A flexible substrate(110) supports the transparent electrode layer and the reinforcement pattern.

Abstract translation: 目的：提供电极结构，其制造方法，包括该晶体管的晶体管，显示装置，触摸屏面板和太阳能电池，以通过将透明电极层的强化图案插入透明电极层来恒定地保持透明电极层的厚度 电极层。 构成：透明电极层（120）包括透明导电材料。 在透明电极层中设置加强图案（130）。 增强图案加强了透明电极层。 加强图案包括格子型，直线型或点型中的一种。 柔性基板（110）支撑透明电极层和加强图案。

公开(公告)号：KR1020130113002A

公开(公告)日：2013-10-15

申请号：KR1020120035204

申请日：2012-04-05

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  박철민 ,  송규완 ,  김봉기 ,  유경열 ,  최재우

IPC: H01L31/042 ,  H01L31/18

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/042 ,  H01L31/18

Abstract: PURPOSE: A method for forming a selective emitter layer using an etchant protecting layer is provided to prevent the selective emitter layer from being damaged by performing a wet-etching process. CONSTITUTION: A first conductive substrate is prepared (S10). A second conductive emitter layer is formed on the upper surface of the first conductive substrate (S20). An etchant protecting layer is patterned and deposited on the second conductive emitter layer (S30). The second conductive emitter layer is selectively wet-etched (S40). The etchant protecting layer is removed from the surface of the first conductive substrate (S50). [Reference numerals] (S10) Step where a first conductive substrate is prepared; (S20) Step where a second conductive emitter layer is formed on the upper surface of the first conductive substrate using an impurity with an opposite type of the first conductive substrate through an ion injection & diffusion process; (S30) Step where an etchant protecting layer is patterned and deposited on the second conductive emitter layer; (S40) Step where the second conductive emitter layer is selectively wet-etched with a wet etchant; (S50) Step where the etchant protecting layer is removed; (S60) Step where an anti-reflection layer is formed on the surface of the substrate; (S70) Step where electrodes are formed on the highly-doped emitter layer and the back of the substrate

Abstract translation: 目的：提供一种使用蚀刻剂保护层形成选择性发射极层的方法，以防止通过执行湿蚀刻工艺来损害选择性发射极层。 构成：准备第一导电性基板（S10）。 在第一导电基板的上表面上形成第二导电发射极层（S20）。 蚀刻剂保护层被图案化并沉积在第二导电发射极层上（S30）。 第二导电发射极层被选择性地湿式蚀刻（S40）。 蚀刻剂保护层从第一导电基板的表面去除（S50）。 （附图标记）（S10）准备第一导电性基板的工序; （S20）通过离子注入和扩散处理使用具有相反类型的第一导电衬底的杂质在第一导电衬底的上表面上形成第二导电发射极层的步骤; （S30）将蚀刻剂保护层图案化并沉积在第二导电发射极层上的步骤; （S40）第二导电发射极层用湿蚀刻剂选择性湿蚀刻的步骤; （S50）去除蚀刻剂保护层的步骤; （S60）在基板的表面上形成防反射层的步骤; （S70）在高掺杂发射极层和衬底的背面上形成电极的步骤