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公开(公告)号:KR100693080B1
公开(公告)日:2007-03-12
申请号:KR1020050040866
申请日:2005-05-16
Applicant: 성균관대학교산학협력단
IPC: H05B33/10
Abstract: 본 발명은 디스플레이 등의 TCO(transparent conductive electrode) 소재로 이용 가능한 ZnO 박막 또는 금속이 도핑된 ZnO 박막의 식각 처리를 유도 결합 플라즈마 방법으로 처리할 수 있는 유도 결합형 플라즈마를 이용한 산화아연박막의 식각 방법에 관한 것이다.
본 발명은 일면에 ZnO 박막 또는 금속이 도핑된 ZnO 박막이 증착되고, 상기 ZnO 박막 위에 패턴 형성을 위한 포토레지스트가 형성된 기판을 준비하는 단계; 상기 기판을 미리 설정된 압력이 유지되는 챔버의 일 측에 장착하는 단계; 및 상기 기판에 대향하는 위치에 설치된 유도 코일에 제 1RF 파워를 인가하고, 상기 기판에 제 2RF 파워를 인가하여, 상기 챔버에 플라즈마 형성을 위한 가스를 공급하는 단계를 포함하는 것을 특징으로 하는 유도 결합형 플라즈마를 이용한 산화아연박막의 식각 방법을 제공한다.
유도 결합형 플라즈마, ZnO, 박막, 식각-
公开(公告)号:KR1020060118259A
公开(公告)日:2006-11-23
申请号:KR1020050040866
申请日:2005-05-16
Applicant: 성균관대학교산학협력단
IPC: H05B33/10
CPC classification number: H01L51/0018 , H01L21/0279 , H01L21/32136 , H01L51/56 , H01L2924/12044
Abstract: A method for etching a zinc oxide thin film using inductively coupled plasma is provided to improve productivity by processing selective etching for a zinc oxide thin film used as a transparent conductive electrode material based on the inductively coupled plasma. A method for etching a zinc oxide thin film using an inductively coupled plasma includes the steps of: preparing a substrate(28) on which a zinc oxide thin film or a metal-doped zinc oxide thin film is evaporated, and a photoresist for forming a pattern on the zinc oxide thin film is formed; installing the substrate on a side of a chamber which maintains a predetermined pressure; and providing a gas for forming a plasma in the chamber(10) by applying a first RF power to an inductive coil(24) installed on a position confronted with the substrate, and applying a second RF power to the substrate.
Abstract translation: 提供了使用电感耦合等离子体蚀刻氧化锌薄膜的方法,以通过对基于电感耦合等离子体的透明导电电极材料使用的氧化锌薄膜进行选择性蚀刻来提高生产率。 使用电感耦合等离子体蚀刻氧化锌薄膜的方法包括以下步骤:制备在其上蒸发氧化锌薄膜或金属掺杂的氧化锌薄膜的基板(28),以及用于形成 形成氧化锌薄膜上的图案; 将基板安装在保持预定压力的室的一侧上; 以及通过向安装在与所述基板相对的位置的感应线圈(24)施加第一RF功率并且向所述基板施加第二RF功率来提供用于在所述室(10)中形成等离子体的气体。
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公开(公告)号:KR100675600B1
公开(公告)日:2007-01-30
申请号:KR1020050096251
申请日:2005-10-12
Applicant: 성균관대학교산학협력단
IPC: H05K3/16
Abstract: A method for manufacturing flexible printed circuit boards is provided to improve an adhesion property between a polyimide film and a metal thin film by using a magnetron sputtering method. A method for manufacturing flexible printed circuit boards includes the steps of: forming a cross-linking layer(110) by ions having high energy, wherein argon ions with high energy and metal ions from a target are collided and impinged into a surface of a polyimide film by a magnetron sputtering device; forming a copper thin film(120) by the metal ions and the sputtered metal neutron particles impinged into the cross-linking layer(110) formed at the above step; and depositing a copper thick layer(130) on the copper thin film(120) formed at the above step by using a sputtering method.
Abstract translation: 提供一种制造柔性印刷电路板的方法,以通过使用磁控溅射方法来提高聚酰亚胺膜和金属薄膜之间的粘附性能。 一种制造柔性印刷电路板的方法包括以下步骤:通过具有高能量的离子形成交联层(110),其中具有高能量的氩离子和来自靶的金属离子相撞并撞击到聚酰亚胺的表面 通过磁控溅射装置进行薄膜; 通过金属离子和溅射的金属中子粒子撞击在上述步骤中形成的交联层(110)形成铜薄膜(120) 以及通过使用溅射方法在上述步骤中形成的铜薄膜(120)上沉积铜厚层(130)。
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公开(公告)号:KR100642201B1
公开(公告)日:2006-11-10
申请号:KR1020050098141
申请日:2005-10-18
Applicant: 성균관대학교산학협력단
Abstract: A method for manufacturing a flexible printed circuit board is provided to improve an adhesive property between a polyimide film and a metal thin film by depositing a metal seed layer by using a magnetron sputtering method. A cross-linking layer forming process is performed to form a cross-linking layer(110) on a surface of a polyimide film by using a magnetron sputtering device for colliding with high-energy ions and target metal ions. A copper thin film forming process is performed to form a copper thin film(120) by colliding with the metal ions and the cross-linking layer. A copper thick film forming process is performed to form a copper thick film(130) on the copper thin film by using a wet plating method.
Abstract translation: 提供了一种制造柔性印刷电路板的方法,以通过使用磁控溅射方法沉积金属种子层来提高聚酰亚胺膜和金属薄膜之间的粘附性能。 进行交联层形成过程以通过使用磁控溅射装置在聚酰亚胺膜的表面上形成交联层(110)以与高能离子和目标金属离子碰撞。 进行铜薄膜形成工艺以通过与金属离子和交联层碰撞形成铜薄膜(120)。 进行铜厚膜形成工艺以通过使用湿式镀覆法在铜薄膜上形成铜厚膜(130)。
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