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公开(公告)号：KR101529578B1
公开(公告)日：2015-06-19
申请号：KR1020110004040
申请日：2011-01-14
Applicant: 성균관대학교산학협력단
IPC: H05H1/34 , H05H1/46 , H01L21/205
Abstract: 본발명의일 측면에따른플라즈마기판처리장치는, 상기기판이수납되는챔버; 상기챔버의상부및 하부에서로나란하게각각배치된상부전극및 하부전극을포함하는주 전극; 상기주 전극사이에위치한가상의수평면을따라서서로나란하게배치된일자막대형상의제1 전극및 제2 전극을포함하는보조전극; 및상기주 전극및 상기보조전극에각각연결되어전력을공급하는주 전원및 보조전원을포함하는전력공급부를포함하고, 상기제1 전극과상기제2 전극사이의간격은상기기판의너비와같거나길게구비되고, 상기제1 전극및 상기제2 전극은상기하부전극보다상기상부전극과가까운위치에구비되며, 상기보조전원은상기주 전원에서공급되는전력의주파수보다높은극초단파영역주파수(UHF)의전력을공급한다.
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公开(公告)号：KR1020120108254A
公开(公告)日：2012-10-05
申请号：KR1020110025918
申请日：2011-03-23
Applicant: 주식회사 글라소울 , 성균관대학교산학협력단
Abstract: PURPOSE: A method for forming an anti-fingerprinting film is provided to obtain a high contact angle by using a precursor including one of hexamethyldisilane, hexamethyldisilazane, and perfluorinated polyether. CONSTITUTION: A method for forming an anti-fingerprinting film comprises the steps of: mounting a substrate on a second electrode, supplying a precursor material including methyl group(CH3) or fluoro carbon group(CF3) with reactive gas to the inside of a chamber, applying power to a first electrode or the second electrode to create plasma between the first and second electrodes, and accelerating the plasma to deposit an anti-fingerprinting film on the surface of the substrate. [Reference numerals] (AA,CC,EE) Silicon oxide layer; (BB,DD,FF) Substrate; (GG) Plasma control
Abstract translation: 目的：提供一种形成防指纹膜的方法，通过使用包含六甲基二硅烷，六甲基二硅氮烷和全氟聚醚中的一种的前体来获得高接触角。 构成：形成防指纹膜的方法包括以下步骤：将基板安装在第二电极上，将包含甲基（CH 3）或氟碳基（CF 3））的前体材料与反应气体一起供应到室的内部 向第一电极或第二电极施加电力以在第一和第二电极之间产生等离子体，并且加速等离子体以在基板的表面上沉积防指纹膜。 （标号）（AA，CC，EE）氧化硅层; （BB，DD，FF）基材; （GG）等离子体对照
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公开(公告)号：KR101280969B1
公开(公告)日：2013-07-02
申请号：KR1020110004073
申请日：2011-01-14
Applicant: 성균관대학교산학협력단
Abstract: 본 발명에 따른 플렉서블 디스플레이의 보호 박막 증착 처리 시, 챔버 내에 상호 수직 대향 배치된 제 1 전극 및 제 2 전극에 각각 인가할 제 1 적정 전력 및 제 2 적정 전력을 설정하고, 플렉서블 디스플레이용 기판을 제 2 전극 상에 배치하고, 챔버 내에 전구체로서 OMCTS(Octamethylcyclotetrasiloxane) 유체를 공급하고, 반응 유체로서 O
2 및 N
2 중 적어도 하나의 반응 유체를 공급하고, 제 1 전극 및 제 2 전극에 각각 제 1 적정 전력 및 제 2 적정 전력을 인가하여 플라즈마를 발생시키고, 기설정된 반응 시간 동안 플렉서블 디스플레이용 기판에 SiO
x 및 SiON 중 어느 하나의 보호 박막을 한층 이상 증착한다.-
公开(公告)号：KR1020120082640A
公开(公告)日：2012-07-24
申请号：KR1020110004040
申请日：2011-01-14
Applicant: 성균관대학교산학협력단
IPC: H05H1/34 , H05H1/46 , H01L21/205
CPC classification number: H01J37/32541 , H01J37/32165 , H01J37/32174 , H01J37/32568 , H01J2237/3321 , H05H1/46 , H05H2001/4645
Abstract: 본발명의일 측면에따른플라즈마기판처리장치는, 상기기판이수납되는챔버; 상기챔버의상부및 하부에서로나란하게각각배치된상부전극및 하부전극을포함하는주 전극; 상기주 전극사이에위치한가상의수평면을따라서서로나란하게배치된일자막대형상의제1 전극및 제2 전극을포함하는보조전극; 및상기주 전극및 상기보조전극에각각연결되어전력을공급하는주 전원및 보조전원을포함하는전력공급부를포함하고, 상기제1 전극과상기제2 전극사이의간격은상기기판의너비와같거나길게구비되고, 상기제1 전극및 상기제2 전극은상기하부전극보다상기상부전극과가까운위치에구비되며, 상기보조전원은상기주 전원에서공급되는전력의주파수보다높은극초단파영역주파수(UHF)의전력을공급한다.
Abstract translation: 目的：提供一种使用等离子体处理衬底的装置及其方法，以通过向主电极和辅助电极供电来提高等离子体产生密度。 构成：主电极（110）包括形成在室（10）的内上部的上电极（111）和形成在室的内下部的底电极（113）。 上电极和下电极产生等离子体产生的电动势。 上电极和下电极从电源单元（150）接收电力。 主电源包括连接到上电极的第一主电源（151a）和连接到底电极的第二主电源（151b）。 流体供应单元（170）在室内供应用于产生等离子体的流体。 辅助电极（130）包括第一电极（131）和第二电极（133）。
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公开(公告)号：KR1020110136136A
公开(公告)日：2011-12-21
申请号：KR1020100055950
申请日：2010-06-14
Applicant: 성균관대학교산학협력단
IPC: H01B13/016 , H01B11/18
Abstract: PURPOSE: A method for manufacturing a micro coaxial cable with a double metal shield layer is provided to improve the shielding feature of a micro coaxial cable by simplifying the production process of the micro coaxial cable. CONSTITUTION: A micro coaxial cable with a double metal shield layer comprises an central conductor(100), an insulating layer(200), a first metal shield layer(310), a second metal shield layer(320), and a jacket layer(400). The insulating layer surrounds an outer circumference using the central conductor as a central line. The first metal shield layer surrounds the outer circumference of the insulating layer. The second metal shield layer surrounds the first metal shield layer. The jacket layer surrounds the second metal shield layer. The insulating layer, the first metal shield layer, and the second metal shield layer, and jacket layer are successively laminated on the central conductor in a concentric circle.
Abstract translation: 目的：提供一种制造具有双金属屏蔽层的微同轴电缆的方法，通过简化微同轴电缆的生产过程来改善微同轴电缆的屏蔽特性。 构造：具有双金属屏蔽层的微同轴电缆包括中心导体（100），绝缘层（200），第一金属屏蔽层（310），第二金属屏蔽层（320）和护套层 400）。 绝缘层使用中心导体作为中心线围绕外周。 第一金属屏蔽层围绕绝缘层的外周。 第二金属屏蔽层围绕第一金属屏蔽层。 护套层围绕第二金属屏蔽层。 绝缘层，第一金属屏蔽层和第二金属屏蔽层以及护套层以同心圆依次层叠在中心导体上。
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Patent Agency Ranking
公开(公告)号：KR1020110092965A
公开(公告)日：2011-08-18
申请号：KR1020100012703
申请日：2010-02-11
Applicant: 성균관대학교산학협력단
IPC: H01L21/203
CPC classification number: H01J37/345 , C23C14/352 , C23C14/358 , H01J37/3211 , H01L21/02532 , H01L21/02631
Abstract: PURPOSE: A target facing sputtering device and a low temperature crystalline silicon thin film combining method using the same are provided to place a substrate in the lower part of a plasma area between a first target and a second target, thereby suppressing collision between the substrate and high energy particles which are generated during a process for depositing a thin film. CONSTITUTION: A gas supply unit(110) supplies a gas to a chamber(100). An inductively coupled plasma coil is arranged on a plasma area between a first target(130a) and a second target(130b). A substrate(150) is arranged in the lower part of the plasma area between the first target and the second target. A first RF power supply source(162) applies potentials to first and second targets. A second RF power supply source(164) applies potentials to the inductively coupled plasma coil.
Abstract translation: 目的：提供靶对象溅射装置和使用其的低温晶体硅薄膜组合方法，以将基板放置在第一靶和第二靶之间的等离子体区域的下部，从而抑制基板与第二靶之间的碰撞 在沉积薄膜的过程中产生的高能粒子。 构成：气体供应单元（110）将气体供应到室（100）。 电感耦合等离子体线圈布置在第一靶（130a）和第二靶（130b）之间的等离子体区域上。 衬底（150）布置在第一靶和第二靶之间的等离子体区域的下部。 第一RF电源（162）将电位施加到第一和第二目标。 第二RF电源（164）将电位施加到电感耦合等离子体线圈。
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公开(公告)号：KR1020110090264A
公开(公告)日：2011-08-10
申请号：KR1020100009953
申请日：2010-02-03
Applicant: 성균관대학교산학협력단
IPC: H01L21/205
CPC classification number: H01J37/32568 , C23C16/509 , H01L31/1824
Abstract: PURPOSE: A plasma board processing unit and a method for evaporating a thin film are provided to multiply thin film evaporating velocity by multiplying plasma-generating density by supplying the power to a main electrode unit and a sub electrode unit, thereby improving the quality of a plasma board processing. CONSTITUTION: The fluid for plasma-generating is inserted in a chamber(140) and the chamber stores a substrate. A main electrode unit comprises one and more electrodes which is vertically arranged to be faced each other within the chamber. A sub electrode unit comprises one and more electrodes which is horizontally arranged to be faced each other within the chamber. A power supply unit supplies the power to the main electrode unit and the sub electrode unit.
Abstract translation: 目的：提供一种等离子体板处理单元和蒸发薄膜的方法，通过将电源供给主电极单元和副电极单元来乘以等离子体产生密度来乘以薄膜蒸发速度，从而提高薄膜蒸发速度 等离子体板加工。 构成：用于等离子体产生的流体插入室（140）中，并且室存储基板。 主电极单元包括一个和多个垂直布置成在腔室内彼此面对的电极。 子电极单元包括一个和多个水平布置成在腔室内彼此面对的电极。 电源单元向主电极单元和副电极单元供电。
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公开(公告)号：KR1020110001303A
公开(公告)日：2011-01-06
申请号：KR1020090058785
申请日：2009-06-30
Applicant: 성균관대학교산학협력단
IPC: H01L21/205 , H01L21/3065
CPC classification number: H01J37/32568 , H01J37/32724
Abstract: PURPOSE: An apparatus and a method for processing a plasma substrate are provided to increase a deposition speed of a coating layer formed on a substrate by supplying RF power to first and second electrodes. CONSTITUTION: A first electrode(110) and a second electrode(120) are arranged in a chamber to face each other. A first power source and a second power source supply RF power to the first and second electrodes. An electrode distance controller(170) controls the distance between the first electrode and the second electrode. A temperature controller is positioned on the lower side of the substrate inputted between the first and second electrodes.
Abstract translation: 目的：提供一种用于处理等离子体基板的装置和方法，以通过向第一和第二电极提供RF功率来增加形成在基板上的涂层的沉积速度。 构成：第一电极（110）和第二电极（120）布置在腔室中以彼此面对。 第一电源和第二电源向第一和第二电极提供RF功率。 电极距离控制器（170）控制第一电极和第二电极之间的距离。 温度控制器位于输入到第一和第二电极之间的衬底的下侧。
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公开(公告)号：KR1020120082657A
公开(公告)日：2012-07-24
申请号：KR1020110004073
申请日：2011-01-14
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: An apparatus and a method for depositing a protective thin film are provided to reduce the permeability of water vapor through the polymer wafer while a SiOx(Silicon Dioxide) thin film or a SiON(Silicon Oxynitride) thin film is deposited on the polymer wafer. CONSTITUTION: An apparatus for depositing a protective thin film comprises a chamber(110), a first electrode(120), a first power supply unit, a second electrode(140),a second power supply unit(150), and a fluid supply unit(160). The fluids for generating plasma are injected into the chamber. The chamber comprises a flexible substrate(W) for a display. The first and second electrodes are vertically and oppositely placed each other in the chamber. The first and second power supply units respectively applies first and second pre-set proper power pre-set into the first and second electrodes. The fluid supplying unit supplies the fluids; OMCTS(Octamethylcyclotetrasiloxane) to the chamber. The flexible substrate(W) for the display is placed on the second electrode.
Abstract translation: 目的：提供一种用于沉积保护薄膜的装置和方法，以降低聚合物晶片的水蒸汽渗透性，同时将SiOx（二氧化硅）薄膜或SiON（氮氧化硅）薄膜沉积在聚合物晶片上 。 一种用于沉积保护性薄膜的装置，包括室（110），第一电极（120），第一电源单元，第二电极（140），第二电源单元（150）和流体供应 单元（160）。 用于产生等离子体的流体被注入到腔室中。 腔室包括用于显示器的柔性基底（W）。 第一和第二电极在腔室中彼此垂直相对放置。 第一和第二电源单元分别在第一和第二电极中预先设置预设的第一和第二预定的正确功率。 流体供应单元供应流体; OMCTS（八甲基环四硅氧烷）至室。 用于显示器的柔性基板（W）放置在第二电极上。
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公开(公告)号：KR101152391B1
公开(公告)日：2012-06-05
申请号：KR1020100055950
申请日：2010-06-14
Applicant: 성균관대학교산학협력단
IPC: H01B13/016 , H01B11/18
Abstract: 본원은증착된이중금속차폐층을포함하는마이크로동축케이블의제조방법에관한것으로서, 중심도체를둘러감싸는절연층을형성하고; 상기절연층을둘러감싸는제 1 금속차폐층을스퍼터링공정에의해증착하고; 상기제 1 금속차폐층을둘러감싸는제 2 금속차폐층을전기도금공정에의해증착하는것: 을포함하는, 마이크로동축케이블의제조방법에관한것이다.
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