公开(公告)号：KR101340550B1

公开(公告)日：2013-12-11

申请号：KR1020100140038

申请日：2010-12-31

Applicant: 제일모직주식회사

Inventor： 노종일 ,  전종선 ,  홍창기 ,  박용순 ,  김원래 ,  김동진

IPC: C09K3/14 ,  H01L21/304

Abstract: 0.01~20.0중량%의 연마제; 0.01~10.0중량%의 산화제; 0.001~10.0중량%의 부식억제제; 0.1~10.0중량% 첨가되고 두 종류의 디카르복시산들을 혼합한 착화제; 및 50~99중량%의 탈이온수를 포함하는 화학기계적연마 조성물 및 이를 이용한 화학기계적연마 방법을 제시한다.

公开(公告)号：KR101293790B1

公开(公告)日：2013-08-06

申请号：KR1020100140290

申请日：2010-12-31

Applicant: 제일모직주식회사

Inventor： 이태영 ,  전종선 ,  홍창기 ,  박용순 ,  정영철 ,  김동진

IPC: C09K3/14 ,  H01L21/304

Abstract: 본 발명은 텅스텐 금속막질의 연마 속도에 대한 절연층 막질의 연마 속도의 비를 특정 비율로 조절함으로써 프로트루젼, 단차, EOE, 스크래치, 디싱, SEAM attack, 이로젼 등의 결함을 제거하고 평탄도를 높일 수 있는 CMP 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것이다.

公开(公告)号：KR1020120077911A

公开(公告)日：2012-07-10

申请号：KR1020100140041

申请日：2010-12-31

Applicant: 제일모직주식회사

Inventor： 임건자 ,  전종선 ,  김기욱 ,  홍창기

IPC: C09K3/14 ,  H01L21/304

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463

Abstract: PURPOSE: A chemical mechanical polishing slurry composition is provided to improve polishing rate of silicon nitride compared with silicon oxide and/or polysilicon, thereby capable of selectively polishing silicon nitride. CONSTITUTION: A chemical mechanical polishing slurry composition has the polishing rate ratio of silicon nitride to silicon oxide is 5:1 or more, and the polishing rate ratio of silicon nitride to polysilicon is 5:1 or more. The slurry composition comprises ultrapure water, abrasive, iron ion compound, stabilizer, a pyridine based compound, and a (meth)acrylate based copolymer. In the slurry composition, the content ratio of (meth)acrylate based copolymer to the pyridine based compound is 10:1 -1:10. The abrasive is one or more selected from a group consisting of ceria, silica, alumina, titania, zirconia, ceria-coated or doped silica, and rare earth metal-coated zirconia.

Abstract translation: 目的：提供化学机械抛光浆料组合物以提高氮化硅与氧化硅和/或多晶硅相比的抛光速率，从而能够选择性地研磨氮化硅。 构成：化学机械抛光浆料组合物的氮化硅与氧化硅的研磨速度比为5:1以上，氮化硅与多晶硅的研磨速度比为5:1以上。 浆料组合物包括超纯水，研磨剂，铁离子化合物，稳定剂，吡啶基化合物和（甲基）丙烯酸酯基共聚物。 在浆料组合物中，（甲基）丙烯酸酯系共聚物与吡啶类化合物的含有比例为10:1〜1:10。 研磨剂是选自由二氧化铈，二氧化硅，氧化铝，二氧化钛，氧化锆，二氧化铈涂覆或掺杂的二氧化硅和稀土金属涂覆的氧化锆组成的组中的一种或多种。

公开(公告)号：KR101340551B1

公开(公告)日：2013-12-11

申请号：KR1020100140041

申请日：2010-12-31

Applicant: 제일모직주식회사

Inventor： 임건자 ,  전종선 ,  김기욱 ,  홍창기

IPC: C09K3/14 ,  H01L21/304

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463

Abstract: 본 발명은 산화규소 및/또는 폴리실리콘 대비 질화규소의 연마속도를 높임으로써, 질화규소를 선택적으로 연마할 수 있는 CMP 슬러리 조성물에 관한 것이다.

公开(公告)号：KR1020120077908A

公开(公告)日：2012-07-10

申请号：KR1020100140038

申请日：2010-12-31

Applicant: 제일모직주식회사

Inventor： 노종일 ,  전종선 ,  홍창기 ,  박용순 ,  김원래 ,  김동진

IPC: C09K3/14 ,  H01L21/304

Abstract: PURPOSE: A chemical mechanical polishing composition is provided to use two or more kinds of organic acids as a complex agent chelating metal oxide oxidized by an oxidizer, thereby improving chemical mechanical polishing flatness. CONSTITUTION: A chemical mechanical polishing composition comprises 0.01-20.0 weight% of abrasive, 0.01-10.0 weight% of oxidizer, 0.001-10.0 weight% of corrosion inhibitor, 0.1-10.0 weight% of complex agent in which two or kinds of dicarboxylic acids are mixed, and 50-99 weight% of de-ionized water. The complex agent comprises two kinds of dicarboxylic acid of which dissociation constant(pKa) is 4 or less. The complex agent is added by mixing malic acid and malonic acid with the weight ratio of 1:1-0.7:0.3. The composition has pH of 2-6.

Abstract translation: 目的：提供化学机械抛光组合物，使用两种或多种有机酸作为由氧化剂氧化的螯合金属氧化物的复合剂，从而改善化学机械抛光平整度。 构成：化学机械抛光组合物包含0.01-20.0重量％的研磨剂，0.01-10.0重量％的氧化剂，0.001-10.0重量％的缓蚀剂，0.1-10.0重量％的二种或两种二羧酸为 混合，50-99重量％的去离子水。 复合剂包含解离常数（pKa）为4以下的二种二羧酸。 通过以1:1-0.7:0.3的重量比混合苹果酸和丙二酸来加入络合剂。 组合物的pH为2-6。

公开(公告)号：KR1020120078104A

公开(公告)日：2012-07-10

申请号：KR1020100140290

申请日：2010-12-31

Applicant: 제일모직주식회사

Inventor： 이태영 ,  전종선 ,  홍창기 ,  박용순 ,  정영철 ,  김동진

IPC: C09K3/14 ,  H01L21/304

Abstract: PURPOSE: A CMP(chemical mechanical polishing) slurry composition is provided to remove defects like protrusion, stepped height, edge over erosion, scratch, dishing, SEAM stack, erosion, etc in two polishing steps and to improve planarity. CONSTITUTION: A CMP(chemical mechanical polishing) slurry composition comprises abrasive, a Fe(3+) compound or complex compound, a water-soluble polymer, and an amino acid. The abrasive composition has the polishing rate of a tungsten metal layer of 200-600 Å/min, and the polishing rate of an insulating layer is 600-1500 Å/min. The comprised amount of the Fe3+ compound or the complex compound is 0.1-1.5 weight% based on the composition.

Abstract translation: 目的：提供CMP（化学机械抛光）浆料组合物，以在两个抛光步骤中去除突起，阶梯高度，边缘过度侵蚀，划痕，凹陷，SEAM叠层，侵蚀等缺陷，并提高平面度。 构成：CMP（化学机械抛光）浆料组合物包含研磨剂，Fe（3+）化合物或络合物，水溶性聚合物和氨基酸。 磨料组合物的钨金属层的抛光速率为200-600 / min，绝缘层的抛光速率为600-1500 / min。 Fe3 +化合物或络合物的含量相对于组合物为0.1〜1.5重量％。