公开(公告)号：KR1020130017685A

公开(公告)日：2013-02-20

申请号：KR1020110080262

申请日：2011-08-11

Applicant: 한국과학기술연구원

Inventor： 최경진 ,  신재철 ,  김재화 ,  김도양 ,  권초롱 ,  김효진

IPC: B82B1/00 ,  B82B3/00 ,  B82Y40/00

Abstract: PURPOSE: An InGaAs(indium gallium arsenide) nanowire is provided to have excellent optical/electrical property without misfit dislocation by growing with volmer-weber method on silicon board patterned by a large area nano imprint method. CONSTITUTION: A manufacturing method of an InGaAs nanowire comprises the following steps. SiO2 is deposited on silicon substrate(111). On SiO2 layer, the nano hole pattern is formed. InxGa1-xAs nano array is perpendicularly grown along the form of nano hole pattern. The SiO2 layer is 10-300nm thickened by plasma enhanced chemical vapor deposition(PECVD). The nano hole pattern is formed by the nano imprint lithography method. The nano hole comprises the diameter of 50-500nm and the distance between the holes is 400-1000nm. The InxGa1-xAs nano wire is grown by the metal-organic chemical vapor deposition(MOCVD) on the patterned silicon substrate. [Reference numerals] (111) Silicon substrate

Abstract translation: 目的：通过在大面积纳米压印方法图案化的硅板上采用伏安法进行生长，提供InGaAs（砷化铟镓）纳米线，具有优异的光学/电学性能，无误差位错。 构成：InGaAs纳米线的制造方法包括以下步骤。 SiO 2沉积在硅衬底（111）上。 在SiO2层上形成纳米孔图案。 In x Ga 1-x As纳米阵列沿着纳米孔图案的形式垂直生长。 通过等离子体增强化学气相沉积（PECVD），SiO 2层增厚10-300nm。 纳米孔图案通过纳米压印光刻法形成。 纳米孔的直径为50-500nm，孔间距为400-1000nm。 InxGa1-xAs纳米线通过金属 - 有机化学气相沉积（MOCVD）在图案化的硅衬底上生长。 （111）硅基板

公开(公告)号：KR1020130017684A

公开(公告)日：2013-02-20

申请号：KR1020110080261

申请日：2011-08-11

Applicant: 한국과학기술연구원

Inventor： 최경진 ,  김재화 ,  김도양 ,  권초롱

IPC: B82B1/00 ,  B82B3/00 ,  B82Y40/00

Abstract: PURPOSE: A manufacturing method of GaAs(gallium arsenide) nano wire is provided to grow nano rod using the gold dots by using polystyrene spheres and forming the large area gold dots with low cost. CONSTITUTION: A manufacturing method of GaAs nano wire uses size adjusted gold dots as a catalyst. The manufacturing method of the GaAs nano wire comprises the following steps. The Gold is evaporation coated on the surface of silicon(si) or gallium arsenide(GaAs) board. Polystyrene sphere(PS) with 1 micron diameter is dispersed on the gold. The diameter of the polystyrene sphere is reduced to 150-200nm by reactive ion etching(RIE). The gold is etched to form patterned gold dots. The polystyrene sphere is removed. The GaAs nano wire is aged by molecular beam epitaxy(MBE) or metal-organic chemical vapor deposition(MOCVD). [Reference numerals] (1) Preparing a substrate; (2) Depositing Au; (3) Arranging PS; (4) Reducing the size of the PS; (6) Removing the PS; (7) Growing nanowire

Abstract translation: 目的：提供GaAs（砷化镓）纳米线的制造方法，通过使用聚苯乙烯球形成金点，以低成本形成大面积的金点，生长纳米棒。 构成：GaAs纳米线的制造方法使用尺寸调整金点作为催化剂。 GaAs纳米线的制造方法包括以下步骤。 金在蒸发涂覆在硅（si）或砷化镓（GaAs）板的表面上。 直径为1微米的聚苯乙烯球体（PS）分散在金子上。 通过反应离子蚀刻（RIE）将聚苯乙烯球的直径减小到150-200nm。 金被蚀刻以形成图案化的金点。 去除聚苯乙烯球。 GaAs纳米线通过分子束外延（MBE）或金属有机化学气相沉积（MOCVD）来老化。 （附图标记）（1）准备基板; （2）沉积Au; （3）安排PS; （4）减小PS的大小; （6）取出PS; （7）生长纳米线