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公开(公告)号：KR100129834B1
公开(公告)日：1998-04-06
申请号：KR1019940029923
申请日：1994-11-15
Applicant: 한국전자통신연구원
IPC: G11C11/40
Abstract: The present invention relates to an integration degree of a logic module in a layout of a field programmable gate array. The semiconductor logic circuit using a transmission logic includes: an inversable transmission means logic part which is connectd to a horizontal wiring of an anti-fuze, and is functioned as a general logic means or a programming logic means according to a control signal; first and second decoders for applying a control signal of the inverable transmission means logic part; a program mode means which selects an operation mode of the inversable transmission means part, and converting the inversable transmission means logic part to a program operation mode in case of a program mode; a multiplexer whcih receives second to fifth output signals by using an operation control signal as the first output signal and the sixth output signal among the output signals of the inversable transmission means logic part; and D flip-flop for receiving an output signal of the multiplexer.
Abstract translation: 本发明涉及现场可编程门阵列布局中逻辑模块的集成度。 使用传输逻辑的半导体逻辑电路包括：反向传输装置，连接到反引信的水平布线的逻辑部分，并且根据控制信号被用作通用逻辑装置或编程逻辑装置; 第一和第二解码器，用于施加可变换传输装置逻辑部分的控制信号; 程序模式装置，其选择所述可逆传输装置部分的操作模式，并且在编程模式的情况下将所述可逆传输装置逻辑部分转换为编程操作模式; 多路复用器通过使用操作控制信号作为第一输出信号和第六输出信号在不可逆传输装置逻辑部分的输出信号中接收第二至第五输出信号; 和D触发器，用于接收多路复用器的输出信号。
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公开(公告)号：KR1019960001164B1
公开(公告)日：1996-01-19
申请号：KR1019920011453
申请日：1992-06-29
IPC: H01L21/027
Abstract: forming oxide silicon layer of predetermined width by oxidating the surface of silicon surface; defining the predetermined pattern by passivating the photo sensitive film on the oxide silicon layer; etching the exposed part of oxide silicon layer to expose the silicon substrate by making the patterned photosensitive film as a mask; forming a high reflection film on the oxide silicon layer and exposed part of the silicon substrate by eliminating the patterned photo sensitive film.
Abstract translation: 通过氧化硅表面的表面形成预定宽度的氧化硅层; 通过钝化氧化硅层上的感光膜来限定预定图案; 通过使图案化感光膜作为掩模，蚀刻暴露于氧化硅层的部分以暴露硅衬底; 通过消除图案化的感光膜，在氧化硅层上形成高反射膜并暴露部分硅衬底。
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Patent Agency Ranking
公开(公告)号：KR1019940000918B1
公开(公告)日：1994-02-04
申请号：KR1019910006834
申请日：1991-04-27
Applicant: 한국전자통신연구원
IPC: H01L21/31
Abstract: A chroma layer (12) on a mask layer (11) is etched with the help of a photo resisting layer (13). A first phase shifting layer (14) is fabricated on the patterned chrome layer (12), a second phase shifting layer (15) on the first phase shifting layer. A second photo resist mask (15a) is built on the second phase shifting layer (15). The first phase shifting layer (14) is etched to form a first phase-shift mask (14a) and a second phase-shift mask (15a).
Abstract translation: 借助于光阻层（13）蚀刻掩模层（11）上的色度层（12）。 在图案化铬层（12）上制造第一相移层（14），在第一移相层上制造第二相移层（15）。 在第二移相层（15）上构建第二光刻胶掩模（15a）。 蚀刻第一相移层（14）以形成第一相移掩模（14a）和第二相移掩模（15a）。
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公开(公告)号：KR1019930008846B1
公开(公告)日：1993-09-16
申请号：KR1019900016318
申请日：1990-10-15
Applicant: 한국전자통신연구원
IPC: H01L21/00
Abstract: forming a phase shifting mask, a chrome light shield film, and a photo sensitive film on a mask base board; forming a light shield film pattern by the use of the photo sensitive film; applying again a photo sensitive film to form a light shield film pattern to complete a photo mask.
Abstract translation: 在掩模基板上形成相移掩模，铬屏蔽膜和感光膜; 通过使用感光膜形成遮光膜图案; 再次施加光敏膜以形成遮光膜图案以完成光罩。
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公开(公告)号：KR1019930024107A
公开(公告)日：1993-12-21
申请号：KR1019920023361
申请日：1992-12-04
Applicant: 한국전자통신연구원
Abstract: 본 발명은 광노광장치를 이용하여 반도체장치의 미세패턴을 형성하는데 사용되는 미해상회절마스크에 관한 것으로, 광노광장비를 이용하여 리쏘그래피 공정을 수행함에 있어서, 주마스크와 보조적으로 사용하되 웨이퍼에 전혀 상이 전달되지 않는 미세 반복패턴으로 구성되고, 변형조명이나 초해상필터를 사용한 노광장비를 사용함에 있어서, 주마스크와 보조적으로 사용하되, 웨이퍼에 전혀 상이 전달되지 않는 미세 반복패턴으로 구성된 미해성회절층을 갖는다.
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