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公开(公告)号:KR100695575B1
公开(公告)日:2007-03-14
申请号:KR1020060031622
申请日:2006-04-06
Applicant: 한국화학연구원
Abstract: A novel erbium oxide precursor material is provided to show excellent thermal stability and volatility by coordinating only oxygen and nitrogen atom ligand with erbium, be less sensitive to moisture and favorable to store, thereby being usefully used for preparing a good quality oxide film. The erbium oxide precursor material is represented by the formula(1), Er[O-A-N(R^3)-B-NR^1R^2]3, and is prepared by reacting a erbium compound represented by the formula(3), ErCl3, with an alkali metal salt compound represented by the formula(4), M[N(Si(CH3)3)2], to obtain a compound represented by the formula(5), M[N(Si(CH3)3)2]3, and then reacting the compound of the formula(5) with an alcohol compound represented by the formula(6), HO-A-N(R^3)-B-NR^1R^2, where M is Li, Na, or K, A is C2-5 alkylene, B is C1-4 alkylene, the A and B is able to be further substituted by at least one linear or branched C1-5 alkyl, and each R^1, R^2 and R^ is independently H or linear or branched C1-5 alkyl.
Abstract translation: 提供了一种新型的氧化铒前体材料,通过仅使氧和氮原子配体与铒配位,表现出优异的热稳定性和挥发性,对湿气不敏感并且有利于储存,由此可用于制备优质氧化物膜。 氧化铒前体材料由式(1)表示,Er [OAN(R 3)-B-NR 1 R 2] 3,并且通过使由式(3)表示的铒化合物,ErCl 3 与由式(4)表示的碱金属盐化合物M [N(Si(CH 3)3)2]反应,以获得由式(5)表示的化合物,M [N(Si(CH 3)3) 2] 3,然后使式(5)化合物与式(6)代表的醇化合物HO-AN(R 3)-B-NR 2 R 1 2(其中M为Li,Na ,或K,A是C 2-5亚烷基,B是C 1-4亚烷基,A和B能够被至少一个直链或支链C 1-5烷基进一步取代,并且各R 1,R 2和 R 1独立地为H或直链或支链的C 1-5烷基。
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公开(公告)号:KR100695571B1
公开(公告)日:2007-03-14
申请号:KR1020060031630
申请日:2006-04-06
Applicant: 한국화학연구원
Abstract: A novel praseodymium oxide precursor material is provided not to cause contamination of carbon or halogen and to improve thermal stability and volatility by coordinating oxygen and nitrogen atom ligand with praseodymium. The praseodymium oxide precursor material is represented by the formula(1), Pr[N(Si(CH3)3)2]x[O-A-N(R^3)-B-NR^1R^2]_3-x, and is prepared by reacting a compound represented by the formula(5), Pr[N(Si(CH3)3)2]3, obtained by reacting a praseodymium compound represented by the formula(3), PrCL3, with an alkali metal salt compound represented by the formula(4), M[N(Si(CH3)3)2]3, with an alcohol compound represented by the formula(6), HO-A-N(R^3)-B-NR^1R^2, where M is Li, Na, or K, A is C2-5 alkylene, B is C1-4 alkylene, the A and B is able to be further substituted by at least one linear or branched C1-5 alkyl, each R^1, R^2 and R^ is independently H or linear or branched C1-5 alkyl, and x is an 0 or 1. To grow the praseodymium oxide, the praseodymium oxide precursor material is deposited using metal organic chemical vapor deposition(MOCVD) or atomic layer deposition(ALD).
Abstract translation: 提供新颖的氧化镨前体材料不会引起碳或卤素的污染,并通过使氧和氮原子配体与镨配位来改善热稳定性和挥发性。 氧化镨前体材料由式(1)表示,Pr [N(Si(CH 3)3)2] x [OAN(R ^ 3)-B-NR ^ 1R ^ 2] _3-x, (3)表示的镨化合物PrCL3与由式(5)表示的化合物Pr [N(Si(CH3)3)2] 3反应而得到的碱金属盐化合物 (6)代表的醇化合物HO-AN(R 3)-B-NR 1 R 2的式(4),M [N(Si(CH 3)3)2] 3,其中 M是Li,Na或K,A是C 2-5亚烷基,B是C 1-4亚烷基,A和B可以进一步被至少一个直链或支链C 1-5烷基取代,每个R 1, R 2和R 3独立地为H或直链或支链的C 1-5烷基,并且x为0或1.为了生长氧化镨,使用金属有机化学气相沉积(MOCVD)或原子法沉积氧化镨前体材料 层沉积(ALD)。
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公开(公告)号:KR100684992B1
公开(公告)日:2007-02-22
申请号:KR1020060031406
申请日:2006-04-06
Applicant: 한국화학연구원
IPC: C01F17/00
Abstract: A lanthanum complex represented by specific formula as precursor of lanthanum oxide thin film is provided to show thermal stability and increased volatile property advantageous to form the thin film of lanthanum oxide with high quality by reacting lanthanum compound with alkali metal salt compound then substitution reacting the reactive product with alcohol compound. The lanthanum oxide precursor is represented by a formula of La[O-A-N(R^3)-B-NR(^1)R(^2)]3 wherein A is C2 to C5 alkylene; B is C1-C4 alkylene; A and B are substituted by at least one of linear or branched alkyl group; and R^1, R^2 and R^3 are independently H or C1 to C5 linear or branched alkyl group. More particularly, the lanthanum oxide precursor is represented by a formula of La[OCR(^4)R(^5)(CH2)mN(R(^3))-(CH2)nNR(^1)R(^2)]3 wherein R^1,R^2,R^3,R^4 and R^5 are independently H or C1 to C5 linear or branched alkyl group, and m and n are integer of 1 to 4. The lanthanum oxide precursor is grown into lanthanum oxide by MOCVD or ALD.
Abstract translation: 提供由具体化学式表示的作为氧化镧薄膜的前体的镧络合物以显示热稳定性和增加的挥发性,其有利于通过使镧化合物与碱金属盐化合物反应而形成具有高质量的氧化镧薄膜, 产品与酒精化合物。 氧化镧前体由式La [O-A-N(R 3)-B-NR(1)R(2)] 3表示,其中A为C 2至C 5亚烷基; B是C1-C4亚烷基; A和B被至少一个直链或支链烷基取代; 并且R 1,R 2和R 3独立地为H或C 1至C 5直链或支链烷基。 更具体地说,氧化镧前体由式La [OCR(R 4)R(R 5)(CH 2)mN(R(R 3)) - (CH 2)n NR(R 1)R(R 2) ] 3其中R 1,R 2,R 3,R 4和R 5独立地为H或C 1至C 5直链或支链烷基,并且m和n为1至4的整数。氧化镧前体 通过MOCVD或ALD生长成氧化镧。
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公开(公告)号:KR100590052B1
公开(公告)日:2006-06-19
申请号:KR1020040104923
申请日:2004-12-13
Applicant: 한국화학연구원
IPC: C07F7/02
Abstract: 본 발명은 하기 화학식 1로 표시되는 새로운 실리콘 착화합물 및 이의 제조 방법에 관한 것으로, 본 발명에 따라 실리콘에 디알킬아미노기가 배위된 착화합물은 열적으로 안정하고 공기 중에서도 안정하며 휘발성이 높고 CVD에 의한 박막 형성시 탄소나 할로겐 오염을 일으키지 않아 양질의 실리콘 또는 실리콘 산화물 박막을 제조하는데 유리하게 이용될 수 있다.
Si(O
t Bu)
2 (OCR
1 R
2 CH
2 NR
3
2 )
2
상기 식에서, R
1 , R
2 및 R
3 는 각각 독립적으로 C
1 -C
4 선형 또는 분지형 알킬이다.Abstract translation: 本发明涉及到的是,根据本发明,二烷基氨基配位与新的硅配合物的化合物的硅配位化合物和由下式表示的方法(1)它是其中热稳定的空气,并通过CVD法在高挥发性的薄膜形成稳定 它不会导致碳或卤素污染,并且可以有利地用于生产高质量的硅或氧化硅薄膜。
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公开(公告)号:KR100684993B1
公开(公告)日:2007-02-22
申请号:KR1020060031579
申请日:2006-04-06
Applicant: 한국화학연구원
IPC: C01G55/00
Abstract: A neodymium complex represented by specific formula as precursor of neodymium oxide thin film is provided to show thermal stability and increased volatile property advantageous to form the thin film of neodymium oxide with high quality by reacting neodymium compound with alkali metal salt compound then substitution reacting the reactive product with alcohol compound. The neodymium oxide precursor is represented by a formula of Nd[O-A-N(R^3)-B-NR(^1)R(^2)]3 wherein A is C2 to C5 alkylene; B is C1-C4 alkylene; A and B are substituted by at least one of linear or branched alkyl group; and R^1, R^2 and R^3 are independently H or C1 to C5 linear or branched alkyl group. More particularly, the neodymium oxide precursor is represented by a formula of Nd[OCR(^4)R(^5)(CH2)mN(R(^3))-(CH2)nNR(^1)R(^2)]3 wherein R^1,R^2,R^3,R^4 and R^5 are independently H or C1 to C5 linear or branched alkyl group, and m and n are integer of 1 to 4. The neodymium oxide precursor is grown into neodymium oxide by MOCVD or ALD.
Abstract translation: 提供由具体化学式表示的钕络合物作为氧化钕薄膜的前体,以显示热稳定性和增加的挥发性,其有利于通过使钕化合物与碱金属盐化合物反应形成高质量的氧化钕薄膜, 产品与酒精化合物。 氧化钕前体由式[Nd-O-A-N(R 3)-B-NR(R 1)R(R 2)] 3表示,其中A是C 2至C 5亚烷基; B是C1-C4亚烷基; A和B被至少一个直链或支链烷基取代; 并且R 1,R 2和R 3独立地为H或C 1至C 5直链或支链烷基。 更具体地说,氧化钕前体由式[Nd(O)(CH 2)m N(R(R 3)) - (CH 2)n NR(R 1)R(R 2) ] 3其中R 1,R 2,R 3,R 4和R 5独立地为H或C 1至C 5直链或支链烷基,并且m和n为1至4的整数。氧化钕前体 通过MOCVD或ALD生长成氧化钕。
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公开(公告)号:KR1020060093391A
公开(公告)日:2006-08-25
申请号:KR1020050014105
申请日:2005-02-21
Applicant: 한국화학연구원
CPC classification number: C07F7/0818 , C23C16/24 , C23C16/401 , C23C16/45525
Abstract: 본 발명은 하기 화학식 1로 표시되는 실리콘 화합물 및 이의 제조 방법에 관한 것으로, 본 발명에 따른 새로운 실리콘 화합물은 열적으로 안정하고, 공기 중에서도 안정하며, 휘발성이 향상되어 양질의 실리콘 또는 실리콘 산화물 박막을 제조하는데 유리하게 이용될 수 있다.
[화학식 1]
Si(OCR
1 R
2 CH
2 NR
3
2 )
4
상기 식에서, R
1 , R
2 및 R
3 는 C
1 -C
4 선형 또는 분지형 알킬이다.
실리콘 화합물-
公开(公告)号:KR100733022B1
公开(公告)日:2007-06-28
申请号:KR1020060030886
申请日:2006-04-05
Applicant: 한국화학연구원
IPC: C07C215/12 , C07C213/02
Abstract: A novel aminoalcohol compound having a long chain which contains functional group such as oxygen and nitrogen and introduces two alkyl groups to carbon located at alpha position of hydroxy group is provided to be used to prepare a metal nanoparticle. And a method for preparing the aminoalcohol compound is provided. The aminoalcohol compound is represented by the formula(1), wherein R1 is a C6-C20 linear or branched alkyl group; R2 and R3 are independently H, a C1-C4 linear or branched alkyl or haloalkyl group but R2 and R3 cannot be H simultaneously; and n is 1 or 2. The method comprises the step of reacting an ethylene compound represented by the formula(2) and an amine compound represented by R1-NH2, wherein R1 is a C6-C20 linear or branched alkyl group; R2 and R3 are independently H, a C1-C4 linear or branched alkyl or haloalkyl group; and n is 1 or 2.
Abstract translation: 提供一种新型的含有长链的氨基醇化合物,用于制备金属纳米粒子,所述长链含有氧和氮等官能团并将两个烷基引入位于羟基的α位的碳。 并提供了制备氨基醇化合物的方法。 氨基醇化合物由式(1)表示,其中R 1是C 6 -C 20直链或支链烷基; R2和R3独立地为H,C1-C4直链或支链烷基或卤代烷基,但R2和R3不能同时为H; 该方法包括使由式(2)表示的乙烯化合物和由R 1 -NH 2表示的胺化合物反应的步骤,其中R 1是C 6 -C 20直链或支链烷基; R2和R3独立地为H,C1-C4直链或支链烷基或卤代烷基; 并且n是1或2。
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公开(公告)号:KR100695466B1
公开(公告)日:2007-03-16
申请号:KR1020060031633
申请日:2006-04-06
Applicant: 한국화학연구원
CPC classification number: C07F19/00 , C23C16/40 , C23C16/45525
Abstract: A novel gadolinium oxide precursor material is provided to be thermally stable and have increased volatility, thereby forming a good quality gadolinium oxide film. The gadolinium oxide precursor material is represented by the formula(1), Gd[N(Si(CH3)3)2]x[O-A-N(R^3)-B-NR^1R^2]_3-x, and is prepared by reacting a compound represented by the formula(5), Gd[N(Si(CH3)3)2]3, obtained by reacting a gadolinium compound represented by the formula(3), GdCl3, with an alkali metal salt compound represented by the formula(4), M[N(Si(CH3)3)2], with an alcohol compound represented by the formula(6), HO-A-N(R^3)-B-NR^1R^2, where M is Li, Na, or K, A is C2-5 alkylene, B is C1-4 alkylene, the A and B is able to be further substituted by at least one linear or branched C1-5 alkyl, each R^1, R^2 and R^ is independently H or linear or branched C1-5 alkyl, and x is an 0 or 1.
Abstract translation: 提供了一种新型的氧化钆前体材料以使其热稳定并且具有增加的挥发性,从而形成了优质的氧化钆膜。 氧化钆前体材料由式(1),Gd [N(Si(CH 3)3)2] x [OAN(R 3 3)-B-NR 1 1R 2] 3-x表示,并且被制备 通过使式(5)表示的化合物与通式(3)所示的钆化合物GdCl 3反应得到的Gd [N(Si(CH 3)3)2] 3与由 式(4),M [N(Si(CH 3)3)2]与式(6)表示的醇化合物,HO-AN(R ^ 3)-B-NR 1 1R 2,其中M 是Li,Na或K,A是C2-5亚烷基,B是C1-4亚烷基,A和B能够被至少一个直链或支链C 1-5烷基进一步取代,每个R 1,R ^ 2和R 4独立地为H或直链或支链C 1-5烷基,x为0或1。
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