公开(公告)号：EP2490256A1

公开(公告)日：2012-08-22

申请号：EP11155173.5

申请日：2011-02-21

Applicant: ABB Research Ltd.

Inventor： Wildner, Franz ,  Schulz, Nicola ,  Christen, Thomas

IPC: H01L23/62 ,  H01L25/07

CPC classification number: H01L25/072 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to an electronic arrangement, comprising an electronic device (12) being located in an electric conduct (18), and a switching means (20) for disconnecting said conduct (18) or for closing a failure conduct (22) bypassing the electronic device (12), wherein the switching means (20) is activatable by heat impact, and wherein the electronic device (12) and the switching means (20) are connected by a connection (24) comprising a high energy material (28), the high energy material (28) being adapted to transfer activation energy from the electronic device (12) to the switching means (20). This electrical arrangement (10) provides improved safety properties with respect to a failure in the electronic device.

Abstract translation: 电子装置技术领域本发明涉及一种电子装置，其包括位于电气导体（18）中的电子装置（12）和用于断开所述导体（18）或用于闭合旁路故障导线（22）的开关装置（20） 所述电子设备（12），其中所述切换装置（20）可通过热冲击来激活，并且其中所述电子设备（12）和所述切换装置（20）通过包括高能材料（28）的连接（24）连接， ），所述高能材料（28）适于将活化能从所述电子设备（12）传递到所述切换装置（20）。 该电气装置（10）相对于电子装置的故障提供改进的安全性能。

公开(公告)号：EP2178117A1

公开(公告)日：2010-04-21

申请号：EP08166924.4

申请日：2008-10-17

Applicant: ABB Research Ltd.

Inventor： Wildner, Franz

IPC: H01L23/367

CPC classification number: H01L23/367 ,  H01L23/3675 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The inventive power semiconductor module (10) comprises a heat sink (6) and an insulating substrate (2) which is in thermal contact with the heat sink (6). Further, a power semiconductor device (1) is in thermal contact over a first surface with the insulating substrate (2). A cooling member (7) establishes a thermal contact between the insulating substrate (2) and a second side of the power semiconductor device (1).

Abstract translation: 本发明的功率半导体模块（10）包括与散热片（6）热接触的散热器（6）和绝缘衬底（2）。 此外，功率半导体器件（1）在第一表面上与绝缘基板（2）热接触。 冷却构件（7）在绝缘基板（2）和功率半导体器件（1）的第二侧之间建立热接触。

公开(公告)号：EP2530711A1

公开(公告)日：2012-12-05

申请号：EP11168071.6

申请日：2011-05-30

Applicant: ABB Research Ltd.

Inventor： Schulz, Nicola ,  Wildner, Franz ,  Christen, Thomas ,  Schuderer, Juergen

IPC: H01L25/07 ,  H01L23/62

CPC classification number: H01L23/62 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a power semiconductor arrangement comprising a power semiconductor device (14), having an emitter electrode and a collector electrode, wherein the collector electrode is electrically connected to a lower electrode (16) and the emitter electrode is electrically connected to an upper electrode (18), wherein the power semiconductor device (14) is arranged to at least one further power semiconductor device in parallel. In order to allow the power semiconductor arrangement (10) to provide an electrical short-circuit mode after a failure event having an improved reliability as well as durability, the arrangement (10) further comprises a high energy material (34) being connected to the power semiconductor device (14) and being connected to at least one failure current bypass unit (36, 54, 70), the failure current bypass unit (36, 54, 70) being arranged in parallel to the power semiconductor device (14) and being activatable by the high energy material (34) to form a current bypass.

Abstract translation: 本发明涉及一种功率半导体装置，包括具有发射电极和集电极的功率半导体器件（14），其中集电极电连接到下电极（16），并且发射极电连接到 上电极（18），其中所述功率半导体器件（14）被并行布置至至少一个另外的功率半导体器件。 为了允许功率半导体布置（10）在具有改善的可靠性和耐久性的故障事件之后提供电短路模式，所述布置（10）还包括高能材料（34），其连接到 功率半导体器件（14）并且连接到至少一个故障电流旁路单元（36,54,70），故障电流旁路单元（36,54,70）与功率半导体器件（14）并联布置，并且 可由高能材料（34）激活以形成电流旁路。

公开(公告)号：EP2270855A1

公开(公告)日：2011-01-05

申请号：EP09164030.0

申请日：2009-06-29

Applicant: ABB Research Ltd.

Inventor： Haederli, Christoph ,  Liu, Chunlei ,  Kicin, Slavo ,  Agostini, Bruno ,  Wildner, Franz

IPC: H01L25/07 ,  H01L25/18 ,  H01L21/60 ,  H01L23/538

CPC classification number: H02M7/003 ,  H01L23/051 ,  H01L23/5385 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/9222 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for fabricating an electrical module comprising a first substrate plate (101), a second substrate plate (102), and semiconductor components (103-110) between the first and second substrate plates is presented. Also an electrical module obtainable with the method and an electrical converter device including such electrical modules are presented. In the method, a bond (112) between first sides of the semiconductor components and the first substrate plate is made by sintering and, subsequently, a bond (111) between second sides of the semiconductor components and the second substrate plate is made by soldering. As the sintered bond can withstand high temperatures, a high temperature solder can be used for the soldered bond without damaging the earlier made sintered bond.

Abstract translation: 提供一种用于制造电模块的方法，包括第一基板（101），第二基板（102）和第一和第二基板之间的半导体部件（103-110）。 还提出了可以通过该方法获得的电模块和包括这种电模块的电转换装置。 在该方法中，通过烧结制作半导体部件的第一面和第一基板之间的接合部（112），接着，在半导体部件的第二面与第二基板之间的接合（111）通过焊接 。 由于烧结粘结能够承受高温，因此可以将高温焊料用于焊接粘合，而不会损坏较早制造的烧结粘结。