公开(公告)号：EP2560468A1

公开(公告)日：2013-02-20

申请号：EP11178151.4

申请日：2011-08-19

Applicant: ABB Research Ltd.

Inventor： Liu, Chunlei ,  Schulz, Nicola ,  Kicin, Slavo

IPC: H05K3/32

CPC classification number: H05K3/321 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/82201 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83097 ,  H01L2224/83192 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83906 ,  H01L2224/97 ,  H01L2924/1305 ,  H01L2924/13055 ,  H05K2201/10674 ,  H05K2203/1131 ,  H05K2203/1484 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/83

Abstract: A method of connecting elements (102-106) of a plurality of elements (102-106) to one another is described. The method comprises applying solder material (110) on a first element (102) of the plurality of elements (102-106). The solder material (110) comprises a liquidus temperature. The method comprises applying sinter material (108) on a second element (103) of the plurality of elements (102-104). The sinter material (108) comprises a sintering temperature. The method comprises assembling the first element (102) and a third element (104, 504) of the plurality of elements (102-106), assembling the second element (103) and a fourth element (106) of the plurality of elements (102-106), soldering the first element (102) and the third element (104) to one another, and sintering the second element (103) and the fourth element (106) to one another. In order to accomplish short process duration, reduced costs and an increased throughput, the sintering and the soldering are simultaneously executed.

Abstract translation: 被描述的元件（102-106），以彼此的多个连接元件（102-106）的方法。 该方法包括的元素的多元性（102-106）的第一元件（102）上施加的焊料材料（110）。 焊接材料（110）包括的液相线温度。 该方法包括的元素的多元性（102-104）的第二元件（103）上施加烧结材料（108）。 的烧结材料（108）包括烧结温度。 该方法包括组装元件的多元性（102-106）的所述第一元件（102）和第三元件（104，504），在组装所述第二元件（103）和元素的多个第四元件（106）（ 102-106），焊接所述第一元件（102）和所述第三元件（104）彼此连接，和烧结所述第二构件（103）和所述第四元件（106）彼此连接。 为了实现短的持续时间的过程，降低了成本，在增加产量，烧结和焊接被同时执行。

公开(公告)号：EP2290683A1

公开(公告)日：2011-03-02

申请号：EP09168824.2

申请日：2009-08-27

Applicant: ABB Research Ltd

Inventor： Haederli, Christoph ,  Kicin, Slavo

IPC: H01L23/498 ,  H01L23/538 ,  H01L23/492 ,  H01L23/13

CPC classification number: H01L23/49833 ,  H01L23/051 ,  H01L23/13 ,  H01L23/5385 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/05554 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: An electrical module comprising a first electrically conductive substrate plate (101), a second electrically conductive substrate plate (102), and semiconductor components (103-110) between the first and second substrate plates is presented. The second substrate plate is shaped to have cuts (115, 116, 122, 123, 124) on its edge or apertures for providing access to control terminals of the semiconductor components in order to facilitate connection of wire bonds to the control terminals. Hence, the wire bonds to the control terminals can be made after the semiconductor components have been bonded to the first and second substrate plates. Furthermore, due to the appropriate shaping of the second substrate plate, the area of the second substrate plate does not need to be essentially smaller than that of the first substrate plate. Thus cooling via the second substrate plate is sufficiently balanced with cooling via the first substrate plate and, as a consequence, temperature stresses can be reduced.

Abstract translation: 提供了一种包括第一导电基板（101），第二导电基板（102）和第一和第二基板之间的半导体部件（103-110）的电模块。 第二基板被成形为在其边缘上具有切口（115,116,122,123,124），用于提供对半导体部件的控制端子的访问，以便于将引线键连接到控制端子。 因此，可以在半导体部件已经接合到第一和第二基板之后进行到控制端子的引线键合。 此外，由于第二基板的适当成形，第二基板的面积不需要基本上小于第一基板的面积。 因此，通过第二衬底板的冷却通过第一衬底板的冷却足够平衡，因此可以降低温度应力。

公开(公告)号：EP2328172B1

公开(公告)日：2019-06-26

申请号：EP09012507.1

申请日：2009-10-02

Applicant: Abb Research Ltd.

Inventor： Yesin, Berk ,  Agostini, Bruno ,  Haederli, Christoph ,  Liu, Chunlei ,  Agostini, Francesco ,  Duran, Hamit ,  Kicin, Slavo

IPC: H01L23/427 ,  F28D15/02 ,  H05K7/20 ,  H01L25/07

公开(公告)号：EP2328172A1

公开(公告)日：2011-06-01

申请号：EP09012507.1

申请日：2009-10-02

Applicant: Abb Research Ltd.

Inventor： Yesin, Berk ,  Agostini, Bruno ,  Haederli, Christoph ,  Liu, Chunlei ,  Agostini, Francesco ,  Duran, Hamit ,  Kicin, Slavo

IPC: H01L23/427

CPC classification number: H01L23/427 ,  F28D15/0233 ,  F28D15/0266 ,  H01L25/072 ,  H01L2924/0002 ,  H05K7/20936 ,  Y10T29/49826 ,  H01L2924/00

Abstract: A power-electronic arrangement comprising semiconductor components (102, 103, 107), a heat exchanger (110), and an electrically conductive element (109) is presented. The heat exchanger comprises evaporator channels (111) and condenser channels (112) for working fluid. The electrically conductive element comprises a contact surface providing a thermal contact to outer surfaces of walls of the evaporator channels for transferring heat from the electrically conductive element to the evaporator channels. A main current terminal of each semiconductor component is bonded to the electrically conductive element which thus forms a part of a main current circuitry of a power system. As the main current terminal is directly bonded to the electrically conductive element cooled with the heat exchanger, the temperature gradients inside the semiconductor components can be kept moderate, and thus the temperatures inside the semiconductor components can be limited.

Abstract translation: 提出了包括半导体部件（102,103,107），热交换器（110）和导电元件（109）的功率电子装置。 热交换器包括用于工作流体的蒸发器通道（111）和冷凝器通道（112）。 导电元件包括​​提供与蒸发器通道的壁的外表面的热接触的接触表面，用于将热量从导电元件传递到蒸发器通道。 每个半导体部件的主电流端子被接合到导电元件，由此形成电力系统的主电流电路的一部分。 由于主电流端子直接接合到用热交换器冷却的导电元件，所以半导体部件内部的温度梯度可以保持适中，从而可以限制半导体部件内部的温度。

公开(公告)号：EP2485256A2

公开(公告)日：2012-08-08

申请号：EP11163114.9

申请日：2011-04-20

Applicant: ABB Research Ltd.

Inventor： Kicin, Slavo ,  Schulz, Nicola ,  Rahimo, Munaf ,  Schnell, Raffael

IPC: H01L23/367 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The invention relates to a semiconductor device (1). In order to obtain a small and simple semiconductor device with efficient cooling, a first electrically conducting cooling element (2) is in contact with the first electrodes (8) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the first electrodes (8) of the semiconductor elements to an external apparatus. A second electrically conducting cooling element (3) is in contact with the second electrodes (13) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the second electrodes of the semiconductor elements (4) to an external apparatus. The semiconductor device (1) comprises an interface (12) which is electrically connected to gates of the semiconductor elements (4) for external control of the state of the semiconductor elements.

Abstract translation: 本发明涉及半导体器件（1）。 为了获得具有有效冷却的小而简单的半导体器件，第一导电冷却元件（2）与半导体元件（4）的第一电极（8）接触，用于转发来自半导体元件的热负荷（ 并且用于将半导体元件的第一电极（8）电连接到外部设备。 第二导电冷却元件（3）与半导体元件（4）的第二电极（13）接触，用于从半导体元件（4）传递热负载并用于电连接半导体元件的第二电极（ 4）到外部设备。 半导体器件（1）包括与半导体元件（4）的栅极电连接的接口（12），用于外部控制半导体元件的状态。

公开(公告)号：EP2528092A1

公开(公告)日：2012-11-28

申请号：EP11167810.8

申请日：2011-05-27

Applicant: ABB Research Ltd.

Inventor： Kicin, Slavo ,  Schulz, Nicola ,  Häfner, Jürgen ,  Liu, Chunlei ,  Hamidi, Amina ,  Fabian, Jan-Henning

IPC: H01L23/62 ,  H01L25/07 ,  H01L21/60

CPC classification number: H01L25/072 ,  H01L23/62 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/29339 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/83801 ,  H01L2224/8382 ,  H01L2224/8384 ,  H01L2224/97 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A semiconductor device (509a, b) comprises a semiconductor chip (504a, b) comprising a bottom electrode and a top electrode and a bottom electrode-baseplate (502). The bottom electrode-baseplate (502) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a top electrode-baseplate (508). The top electrode-baseplate (508) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a first preform (506a, b) made of material configured for supporting a creation of an electrically conductive alloy when being melted. In order to provide a semiconductor device having enhanced characteristics, the bottom electrode of the semiconductor chip (504a, b) is thermally and electrically connected to the bottom electrode-baseplate (502) via a first bonding layer (618), the top electrode of the semiconductor chip (504a, b) is thermally and electrically connected to a first side of the first preform (506a, b) via a second bonding layer (620), and the second side of the first preform (506a, b) is thermally and electrically connected to the top electrode-baseplate (508) via a third bonding layer (624).

Abstract translation: 半导体器件（509a，b）包括具有底部电极和顶部电极以及底部电极基板（502）的半导体芯片（504a，b）。 底部电极基板（502）是导电且导热的。 半导体器件（509a，b）包括顶部电极基板（508）。 顶部电极基板（508）是导电且导热的。 半导体器件（509a，b）包括由材料制成的第一预制件（506a，506b），所述第一预制件被构造成用于在熔化时支持导电合金的形成。 为了提供具有增强特性的半导体器件，半导体芯片（504a，b）的底部电极经由第一键合层（618）与底部电极基板（502）热和电连接， 半导体芯片（504a，b）经由第二结合层（620）热和电连接到第一预成型件（506a，506b）的第一侧，并且第一预成型件（506a，506b）的第二侧是热 并经由第三结合层（624）电连接到顶部电极基板（508）。

公开(公告)号：EP2503595A1

公开(公告)日：2012-09-26

申请号：EP12153710.4

申请日：2012-02-02

Applicant: ABB Research Ltd.

Inventor： Liu, Chunlei ,  Schulz, Nicola ,  Kicin, Slavo

IPC: H01L23/62 ,  H01L25/07

CPC classification number: H01L25/072 ,  H01L23/3735 ,  H01L23/492 ,  H01L23/62 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/03505 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/0568 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29298 ,  H01L2224/32506 ,  H01L2224/37147 ,  H01L2224/3718 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/83805 ,  H01L2224/8384 ,  H01L2224/84424 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/8448 ,  H01L2224/8484 ,  H01L2224/85205 ,  H01L2224/92246 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

Abstract: The present invention relates to a power semiconductor module comprising a semiconductor device (12), in particular an insulated gate bipolar transistor, a reverse conductive insulated gate bipolar transistor, or a bi-mode insulated gate transistor, with an emitter electrode and a collector electrode, wherein an electrically conductive upper layer (14) is sintered to the emitter electrode, the upper layer (14) at least partly being capable of forming an eutecticum with the semiconductor of the semiconductor device (12) and at least partly having a coefficient of thermal expansion which differs from the coefficient of thermal expansion of the semiconductor in a range of ≤ 250%, in particular ≤ 50%, and wherein an electrically conductive base plate (20) is sintered to the collector electrode, and wherein the semiconductor module (10) further comprises an electrically conductive area (24) being electrically isolated from the base plate (20) and being connected to the upper layer (14) via a direct electrical connection (22). A semiconductor module according to the invention is easy to prepare, has an improved reliability and exhibits short circuit failure mode capacity.

Abstract translation: 本发明涉及一种功率半导体模块，其包括半导体器件（12），特别是绝缘栅双极晶体管，反向导通绝缘栅双极晶体管或双模绝缘栅晶体管，其具有发射极和集电极 ，其中将导电上层（14）烧结到所述发射极，所述上层（14）至少部分地能够与半导体器件（12）的半导体形成共晶，并且至少部分地具有 热膨胀与半导体的热膨胀系数不同，在‰÷250％的范围内，特别是‰¤50％，其中将导电基板（20）烧结到集电极上，其中半导体 模块（10）还包括导电区域（24），其与基板（20）电隔离并连接到上层（ 14）通过直接电连接（22）。 根据本发明的半导体模块易于准备，具有改进的可靠性并且具有短路故障模式容量。

公开(公告)号：EP2485256A3

公开(公告)日：2018-01-03

申请号：EP11163114.9

申请日：2011-04-20

Applicant: ABB Research Ltd.

Inventor： Kicin, Slavo ,  Schulz, Nicola ,  Rahimo, Munaf ,  Schnell, Raffael

IPC: H01L23/367 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The invention relates to a semiconductor device (1). In order to obtain a small and simple semiconductor device with efficient cooling, a first electrically conducting cooling element (2) is in contact with the first electrodes (8) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the first electrodes (8) of the semiconductor elements to an external apparatus. A second electrically conducting cooling element (3) is in contact with the second electrodes (13) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the second electrodes of the semiconductor elements (4) to an external apparatus. The semiconductor device (1) comprises an interface (12) which is electrically connected to gates of the semiconductor elements (4) for external control of the state of the semiconductor elements.

Abstract translation: 本发明涉及一种半导体器件（1）。 为了获得具有高效冷却的小而简单的半导体器件，第一导电冷却元件（2）与半导体元件（4）的第一电极（8）接触，用于从半导体元件（ 4）并且用于将半导体元件的第一电极（8）电连接到外部装置。 第二导电冷却元件（3）与半导体元件（4）的第二电极（13）接触，用于传递来自半导体元件（4）的热负载并用于电连接半导体元件（4）的第二电极 4）到外部设备。 半导体器件（1）包括与半导体元件（4）的栅极电连接的接口（12），用于外部控制半导体元件的状态。

公开(公告)号：EP2306796A1

公开(公告)日：2011-04-06

申请号：EP09172201.7

申请日：2009-10-05

Applicant: ABB Research Ltd.

Inventor： Chunlei, Liu ,  Kicin, Slavo ,  Schulz, Nicola

IPC: H05K3/32

CPC classification number: H05K3/321 ,  H01L23/4951 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2224/2732 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29101 ,  H01L2224/29139 ,  H01L2224/29299 ,  H01L2224/29339 ,  H01L2224/33181 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/45124 ,  H01L2224/73263 ,  H01L2224/83091 ,  H01L2224/83095 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83207 ,  H01L2224/8384 ,  H01L2224/84091 ,  H01L2224/84095 ,  H01L2224/84207 ,  H01L2224/8484 ,  H01L2224/9221 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H05K2201/1034 ,  H05K2201/10628 ,  H05K2203/0285 ,  H05K2203/1131 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/2929 ,  H01L2224/48 ,  H01L2224/83 ,  H01L2224/84

Abstract: The invention relates to a method of joining at least two components (12, 16, 36) of an electrical circuit module (30) for establishing a mechanical and electrical interconnection between the components (12, 16, 36), wherein the joining is realized by a sintering process for sintering a metal joint (26, 34) between the components (12, 16, 36) and wherein ultrasonic vibration energy is supplied at least temporarily during the sintering process for supporting said sintering process.
The invention further relates to a corresponding composite (10) comprising at least two components (12, 16, 36) of an electrical circuit module (30) and a corresponding electrical circuit module (30).

Abstract translation: 本发明涉及一种用于建立部件（12，16，36）之间的机械和电互连连接的电路模块（30）的至少两个部件（12，16，36），worin接合的方法实现 通过用于烧结部件（12，16，36）和worin超声波振动能量之间的金属接头（26,34）的烧结过程中用于支撑所述烧结过程在烧结过程被供给至少暂时。 本发明还涉及一种相应的复合物（10），包括电路模块（30）和一个对应的电电路模块（30）的至少两个部件（12，16，36）。

公开(公告)号：EP2270855A1

公开(公告)日：2011-01-05

申请号：EP09164030.0

申请日：2009-06-29

Applicant: ABB Research Ltd.

Inventor： Haederli, Christoph ,  Liu, Chunlei ,  Kicin, Slavo ,  Agostini, Bruno ,  Wildner, Franz

IPC: H01L25/07 ,  H01L25/18 ,  H01L21/60 ,  H01L23/538

CPC classification number: H02M7/003 ,  H01L23/051 ,  H01L23/5385 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/9222 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for fabricating an electrical module comprising a first substrate plate (101), a second substrate plate (102), and semiconductor components (103-110) between the first and second substrate plates is presented. Also an electrical module obtainable with the method and an electrical converter device including such electrical modules are presented. In the method, a bond (112) between first sides of the semiconductor components and the first substrate plate is made by sintering and, subsequently, a bond (111) between second sides of the semiconductor components and the second substrate plate is made by soldering. As the sintered bond can withstand high temperatures, a high temperature solder can be used for the soldered bond without damaging the earlier made sintered bond.

Abstract translation: 提供一种用于制造电模块的方法，包括第一基板（101），第二基板（102）和第一和第二基板之间的半导体部件（103-110）。 还提出了可以通过该方法获得的电模块和包括这种电模块的电转换装置。 在该方法中，通过烧结制作半导体部件的第一面和第一基板之间的接合部（112），接着，在半导体部件的第二面与第二基板之间的接合（111）通过焊接 。 由于烧结粘结能够承受高温，因此可以将高温焊料用于焊接粘合，而不会损坏较早制造的烧结粘结。