公开(公告)号：DE112012003201T5

公开(公告)日：2014-06-26

申请号：DE112012003201

申请日：2012-05-15

Applicant: ADEKA CORP

Inventor： SAITO AKIO ,  WADA SENJI ,  YOSHINO TOMOHARU

IPC: C07C215/08 ,  C07F15/04 ,  C23C16/18 ,  H01L21/285

Abstract: Alkoxidverbindung, die durch die folgende Formel (I) dargestellt ist, und ein Rohmaterial für die Bildung eines dünnen Films, enthaltend die Alkoxidverbindung. In der Formel stellt R1 eine lineare oder verzweigte Alkylgruppe mit 2 bis 4 Kohlenstoffatomen dar, und R2 und R3 stellen jeweils eine lineare oder verzweigte Alkylgruppe mit 1 bis 4 Kohlenstoffatomen dar. In der Formel (I) ist R1 vorzugsweise eine Ethylgruppe. Es ist auch bevorzugt, dass einer der Reste R2 und R3, oder beide, eine Ethylgruppe ist/sind. Das Rohmaterial für die Bildung eines dünnen Films, beinhaltend eine Alkoxidverbindung, die durch die allgemeine Formel (I) dargestellt ist, wird vorzugsweise als ein Rohmaterial für die chemische Dampfabscheidung verwendet.

公开(公告)号：DE112012003201B4

公开(公告)日：2022-06-15

申请号：DE112012003201

申请日：2012-05-15

Applicant: ADEKA CORP

Inventor： WADA SENJI ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07F15/04 ,  C23C16/18 ,  H01L21/285

Abstract: Alkoxidverbindung, die durch die folgende Formel (I) dargestellt ist:; in der Formel stellt R1eine lineare oder verzweigte Alkylgruppe mit 2 bis 4 Kohlenstoffatomen dar, und R2und R3stellen jeweils eine lineare oder verzweigte Alkylgruppe mit 1 bis 4 Kohlenstoffatomen dar.

公开(公告)号：DE102007042943A1

公开(公告)日：2008-03-27

申请号：DE102007042943

申请日：2007-09-10

Applicant: ADEKA CORP

Inventor： WADA SENJI ,  ABE TETSUJI ,  SAKURAI ATSUSHI ,  HIGASHINO TAKASHI ,  FUJIMOTO RYUSAKU ,  SHIMIZU MASAKO

IPC: C07F7/00 ,  C07F5/00 ,  C23C16/40

Abstract: Titanium, zirconium and hafnium alkenoxides (I) are new. Metal alkenoxides of formula (I) are new. M(OR) 4 (I) R : 2-propen-1-yl, 1-methyl-2-propen-1-yl or 1,1-dimethyl-2-propen-1-yl. Independent claims are also included for: (1) material (M1) for forming a thin film, comprising a compound (I); (2) producing a thin film by vaporizing M1 over a substrate to form a (I)-containing vapor and forming a thin film on the substrate by decomposing (I) or subjecting (I) to a chemical reaction; (3) producing a thin film by vaporizing M1 over a substrate to form a (I)-containing vapor and forming a thin metal oxide film on the substrate by decomposing (I) or subjecting (I) to a chemical reaction in the presence of a reactive gas containing oxygen or ozone; (4) thin film produced as above.

公开(公告)号：EP2233491A4

公开(公告)日：2011-05-25

申请号：EP08871220

申请日：2008-10-22

Applicant: ADEKA CORP

Inventor： YAMADA NAOKI ,  YOSHINAKA ATSUYA ,  WADA SENJI

IPC: C07F7/28 ,  C23C16/34

CPC classification number: C07F7/006 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45553

公开(公告)号：JP2012007192A

公开(公告)日：2012-01-12

申请号：JP2010141426

申请日：2010-06-22

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YOSHINAKA ATSUYA ,  WADA SENJI ,  SAKURAI ATSUSHI ,  SHIMIZU MASAKO ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C23C16/14

Abstract: PROBLEM TO BE SOLVED: To provide an alkaline-earth metal compound which has a low melting point or is a liquid, is stable to heat and is suitable for a CVD method, ALD method or the like.SOLUTION: The metal compound is represented by general formula (1) (wherein M is an alkaline earth metal atom; and Buis a second butyl group). Magnesium, calcium, strontium, barium and radium are exemplified as the alkaline earth metal atoms represented by M. The metal compound in which M is strontium is especially preferable as a raw material for thin film production used in CVD or ALD.

Abstract translation: 待解决的问题：为了提供具有低熔点或液体的碱土金属化合物，其对于热是稳定的并且适用于CVD法，ALD法等。 解决方案：金属化合物由通式（1）表示（其中M是碱土金属原子;并且Bu S 是第二丁基）。 镁，钙，锶，钡和镭作为由M表示的碱土金属原子。作为CVD或ALD中使用的薄膜制造用原料，特别优选其中M为锶的金属化合物。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009209432A

公开(公告)日：2009-09-17

申请号：JP2008055499

申请日：2008-03-05

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YOSHINAKA ATSUYA ,  WADA SENJI ,  ABE TETSUJI ,  TAKAHASHI KAZUTO

IPC: C23C16/40 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor growth using inexpensive aluminum halide as a precursor of aluminum-oxide thin film, and a method for manufacturing the aluminum-oxide thin film.
SOLUTION: The raw material for chemical vapor growth composed of an aluminum halide compound expressed by general formula (1), and an organic compound having a cyano group expressed by general formula (2) is used as the raw material for chemical vapor growth. In the formulas, X denotes a halogen atom; R denotes a 1-10C hydrocarbon group; n denotes 1 or 2.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：使用廉价的卤化铝作为氧化铝薄膜的前体来提供用于化学气相生长的原料，以及制造氧化铝薄膜的方法。 解决方案：将由通式（1）表示的卤化铝化合物和由通式（2）表示的具有氰基的有机化合物组成的化学气相生长原料用作化学气相原料 成长。 在该式中，X表示卤原子; R表示1-10C烃基; n表示1或2.版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2012056860A

公开(公告)日：2012-03-22

申请号：JP2010199972

申请日：2010-09-07

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  SAKURAI ATSUSHI ,  SHIMIZU MASAKO ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07F17/00 ,  C07C215/08 ,  C07F7/28 ,  C23C16/18

Abstract: PROBLEM TO BE SOLVED: To provide a titanium precursor which excels in reactivity with a reactant suitable for a CVD method, an ALD method or the like, especially with an oxidant, and in which the improvement in film formation speed and the low-temperature thin film become possible.SOLUTION: The metal compound is expressed by general formula (1). In the formula, Rdenotes a hydrogen atom or a methyl group, Rdenotes a methyl group or an ethyl group, and Rdenotes a methyl group or an ethyl group.

Abstract translation: 要解决的问题：提供一种钛合金前体，它与适用于CVD法的反应物，ALD法等，尤其是氧化剂的反应性优异，其中成膜速度和低 温度薄膜成为可能。 解决方案：金属化合物由通式（1）表示。 在该式中，R 1 表示氢原子或甲基，R“表示甲基或乙基， 并且R 3 表示甲基或乙基。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011106008A

公开(公告)日：2011-06-02

申请号：JP2009264493

申请日：2009-11-20

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  ABE TETSUJI

IPC: C23C16/18 ,  C07F15/00 ,  C23C16/40 ,  H01L21/28 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition, containing a (1,5-cyclooctadiene)(η
6 -arene)ruthenium compound which has improved thermostability and is a liquid in a room temperature range.
SOLUTION: The (1,5-cyclooctadiene)(η
6 -arene)ruthenium compound shown by general formula (1) (wherein R
1 is a hydrogen atom or a methyl group; R
2 is a methyl group or an ethyl group when R
1 is the hydrogen atom and R
2 is the methyl group when R
1 is the methyl group) is used as the raw material for chemical vapor deposition.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种含有具有改善的热稳定性并且是液体的（1,5-环辛二烯）（η 6 - 芳烃）钌化合物的化学气相沉积原料 在室温范围内。 解决方案：通式（1）所示的（1,5-环辛二烯）（η 6 - 芳烃）钌化合物（其中R 1 是氢原子 或甲基;当R 1为氢原子且R SP 2为甲基时，R SP 2为甲基或乙基 当R 1 为甲基时）用作化学气相沉积的原料。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009040707A

公开(公告)日：2009-02-26

申请号：JP2007206088

申请日：2007-08-08

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  ABE TETSUJI ,  SAKURAI ATSUSHI ,  FUJIMOTO RIYUUSAKU ,  SHIMIZU MASAKO

IPC: C07F17/00 ,  C07C43/04 ,  C07F3/00 ,  C07F19/00 ,  C23C16/40 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for forming a thin film, and containing a strontium precursor having properties such as evaporation property, thermal stability, etc., which is suitably used especially as a raw material for CVD. SOLUTION: The thin film-forming raw material contains a strontium compound obtained by adding a bidentate compound expressed by general formula (1) (in the formula, R 1 and R 6 are each independently a 1-4C alkyl group; R 3 to R 5 are each independently a hydrogen atom or a 1-4C alkyl group; X and Y are each independently an oxygen atom, -NH- or -NR-; and R is a 1-4C alkyl group) to bis(pentamethylcyclopentadienyl)strontium. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供用于形成薄膜的原料，并且包含特别适合用作CVD原料的具有诸如蒸发性能，热稳定性等特性的锶前体。 解决方案：薄膜形成原料含有通过将通式（1）表示的二齿化合物（式中，R 1 和R 6）而得到的锶化合物， / SP>各自独立地为1-4C烷基; R 1至R 5各自独立地为氢原子或1-4C烷基; X和Y为 各自独立地为氧原子，-NH-或-NR-; R为1-4C烷基）至双（五甲基环戊二烯基）锶。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008069135A

公开(公告)日：2008-03-27

申请号：JP2006251575

申请日：2006-09-15

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  ABE TETSUJI ,  SAKURAI ATSUSHI ,  TONO TAKASHI ,  FUJIMOTO RIYUUSAKU ,  SHIMIZU MASAKO

IPC: C07C33/03 ,  C07F7/00 ,  C07F7/28 ,  C23C16/40 ,  H01L21/316

CPC classification number: C07F7/006 ,  C23C16/405

Abstract: PROBLEM TO BE SOLVED: To impart the properties such as decomposition properties by heat and/or oxidation, heat stability, vapor pressure and the like conforming as the film-forming raw material, particularly a CVD raw material to a precursor for supplying titanium, zirconium or hafnium to a film in the process for preparing the film which has a vaporization step.
SOLUTION: The metal alkoxide compound is represented by formula (1) (wherein R
1 to R
8 are each hydrogen or a methyl group and M is titanium, zirconium or hafnium).
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了赋予与成膜原料（特别是CVD原料）一致的加热和/或氧化，热稳定性，蒸气压等的分解性能等赋予供给用前体的性质 钛，锆或铪在制备具有蒸发步骤的膜的方法中的膜。 解决方案：金属醇盐化合物由式（1）表示（其中R 1 至R SP 8各自为氢或甲基，M为钛，锆 或铪）。 版权所有（C）2008，JPO＆INPIT