公开(公告)号：KR20180022775A

公开(公告)日：2018-03-06

申请号：KR20187000230

申请日：2016-05-17

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  NISHIDA AKIHIRO ,  SUGIURA NANA

IPC: C07F15/06 ,  C23C16/18 ,  H01L21/285

CPC classification number: C23C16/18 ,  C07F13/00 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C07F15/065 ,  H01L21/285

Abstract: 본발명의신규화합물은, 하기일반식 (I) 또는 (II)로나타내어지는것을특징으로한다: [화학식 1][식중, R및 R는, 각각독립적으로탄소원자수 1 ~ 12의탄화수소기를나타내며, 그탄화수소기의수소원자는 Si(R)으로치환되어있는경우도있다. 단, R과 R는상이한기이다. R은, 메틸기또는에틸기를나타내며, M은, 금속원자또는규소원자를나타내며, n은 1 ~ 4의정수를나타낸다.]

Abstract translation: 本发明的新型化合物的特征在于由以下通式（I）或（II）表示：其中R和R各自独立地表示具有1至12个碳原子的烃基， 该烃基的氢原子可以被Si（R）取代。 只要R和R是不同的基团。 R表示甲基或乙基，M表示金属原子或硅原子，n表示1〜4的数。

公开(公告)号：DE112012003201T5

公开(公告)日：2014-06-26

申请号：DE112012003201

申请日：2012-05-15

Applicant: ADEKA CORP

Inventor： SAITO AKIO ,  WADA SENJI ,  YOSHINO TOMOHARU

IPC: C07C215/08 ,  C07F15/04 ,  C23C16/18 ,  H01L21/285

Abstract: Alkoxidverbindung, die durch die folgende Formel (I) dargestellt ist, und ein Rohmaterial für die Bildung eines dünnen Films, enthaltend die Alkoxidverbindung. In der Formel stellt R1 eine lineare oder verzweigte Alkylgruppe mit 2 bis 4 Kohlenstoffatomen dar, und R2 und R3 stellen jeweils eine lineare oder verzweigte Alkylgruppe mit 1 bis 4 Kohlenstoffatomen dar. In der Formel (I) ist R1 vorzugsweise eine Ethylgruppe. Es ist auch bevorzugt, dass einer der Reste R2 und R3, oder beide, eine Ethylgruppe ist/sind. Das Rohmaterial für die Bildung eines dünnen Films, beinhaltend eine Alkoxidverbindung, die durch die allgemeine Formel (I) dargestellt ist, wird vorzugsweise als ein Rohmaterial für die chemische Dampfabscheidung verwendet.

公开(公告)号：DE112012003201B4

公开(公告)日：2022-06-15

申请号：DE112012003201

申请日：2012-05-15

Applicant: ADEKA CORP

Inventor： WADA SENJI ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07F15/04 ,  C23C16/18 ,  H01L21/285

Abstract: Alkoxidverbindung, die durch die folgende Formel (I) dargestellt ist:; in der Formel stellt R1eine lineare oder verzweigte Alkylgruppe mit 2 bis 4 Kohlenstoffatomen dar, und R2und R3stellen jeweils eine lineare oder verzweigte Alkylgruppe mit 1 bis 4 Kohlenstoffatomen dar.

公开(公告)号：EP3144313A4

公开(公告)日：2017-12-06

申请号：EP15792769

申请日：2015-03-31

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F15/06 ,  C23C16/18 ,  C23C16/44

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R 1 to R 3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

公开(公告)号：EP3178808A4

公开(公告)日：2018-03-21

申请号：EP15829762

申请日：2015-07-16

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YOSHINO TOMOHARU ,  ENZU MASAKI

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/06 ,  C23C16/18 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/0818 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/285

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I) :

公开(公告)号：EP2921472A4

公开(公告)日：2016-06-15

申请号：EP13854668

申请日：2013-10-21

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YAMADA NAOKI ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C23C16/16 ,  C23C16/40 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：EP3144293A4

公开(公告)日：2018-01-03

申请号：EP15793276

申请日：2015-04-08

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  SAKURAI ATSUSHI ,  NISHIDA AKIHIRO ,  OKABE MAKOTO

IPC: C07C215/08 ,  C07F1/08 ,  C23C16/18 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：EP3135664A4

公开(公告)日：2017-11-01

申请号：EP15782391

申请日：2015-03-30

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YOSHINO TOMOHARU ,  ENZU MASAKI

IPC: C07C251/08 ,  C07F15/06 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285 ,  H01L21/28556 ,  H01L21/28568

公开(公告)号：EP2940025A4

公开(公告)日：2016-09-14

申请号：EP13869190

申请日：2013-11-26

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F5/06 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

公开(公告)号：JP2012056860A

公开(公告)日：2012-03-22

申请号：JP2010199972

申请日：2010-09-07

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  SAKURAI ATSUSHI ,  SHIMIZU MASAKO ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07F17/00 ,  C07C215/08 ,  C07F7/28 ,  C23C16/18

Abstract: PROBLEM TO BE SOLVED: To provide a titanium precursor which excels in reactivity with a reactant suitable for a CVD method, an ALD method or the like, especially with an oxidant, and in which the improvement in film formation speed and the low-temperature thin film become possible.SOLUTION: The metal compound is expressed by general formula (1). In the formula, Rdenotes a hydrogen atom or a methyl group, Rdenotes a methyl group or an ethyl group, and Rdenotes a methyl group or an ethyl group.

Abstract translation: 要解决的问题：提供一种钛合金前体，它与适用于CVD法的反应物，ALD法等，尤其是氧化剂的反应性优异，其中成膜速度和低 温度薄膜成为可能。 解决方案：金属化合物由通式（1）表示。 在该式中，R 1 表示氢原子或甲基，R“表示甲基或乙基， 并且R 3 表示甲基或乙基。 版权所有（C）2012，JPO＆INPIT