公开(公告)号：EP2921472A4

公开(公告)日：2016-06-15

申请号：EP13854668

申请日：2013-10-21

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YAMADA NAOKI ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C23C16/16 ,  C23C16/40 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：EP2233491A4

公开(公告)日：2011-05-25

申请号：EP08871220

申请日：2008-10-22

Applicant: ADEKA CORP

Inventor： YAMADA NAOKI ,  YOSHINAKA ATSUYA ,  WADA SENJI

IPC: C07F7/28 ,  C23C16/34

CPC classification number: C07F7/006 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45553

公开(公告)号：EP1770187A4

公开(公告)日：2009-10-28

申请号：EP05745889

申请日：2005-05-31

Applicant: ADEKA CORP

Inventor： YAMADA NAOKI ,  TANAKA SHINICHI

IPC: C23C16/40 ,  C07C49/92 ,  C07F3/06 ,  C23C16/18

CPC classification number: C23C16/407 ,  C07C49/92 ,  C23C16/18

公开(公告)号：EP1698614A4

公开(公告)日：2006-12-06

申请号：EP04820870

申请日：2004-11-09

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  YAMADA NAOKI

IPC: C07F7/00 ,  C23C16/18 ,  C23C16/40

CPC classification number: C23C16/409 ,  C07F7/006 ,  C23C16/18

Abstract: A metal compound represented by the following general formula (I): [wherein R , R , R , and R each represent an alkyl group having one to four carbon atoms, A represents an alkanediyl group having one to eight carbon atoms, M represents a lead atom, a titanium atom or a zirconium atom, and n represents 2 when M is a lead atom and represents 4 when M is a titanium or zirconium atom]. The above metal compound has a low melting point and thus can be transported in a liquid state, has a high vapor pressure and thus is easy to vaporize, and is free from the change in its quality due to the exchange of ligands or a chemical reaction also when mixed with another metal compound, and thus it is suitable as a material for use in a method for preparing a thin film, such as the CVD method forming a thin film through the vaporization of a metal compound.

Abstract translation: 由以下通式（I）表示的金属化合物：[其中R 1，R 2，R 3和R 4各自表示具有1至4个碳原子的烷基，A表示 具有1-8个碳原子的链烷二基，M表示铅原子，钛原子或锆原子，并且当M是铅原子时，n表示2，当M是钛或锆原子时，表示4。 上述金属化合物具有低熔点，因此可以以液态输送，具有高蒸气压并且因此容易蒸发，并且由于配体交换或化学反应而没有质量变化 在与其他金属化合物混合时也是合适的，因此适合作为用于制备薄膜的方法的材料，例如通过金属化合物的气化形成薄膜的CVD法。

公开(公告)号：JP2014165496A

公开(公告)日：2014-09-08

申请号：JP2014031269

申请日：2014-02-21

Applicant: Samsung Electronics Co Ltd ,  三星電子株式会社Samsung Electronics Co.,Ltd. ,  Adeka Corp ,  株式会社Adeka

Inventor： YOUN SANG-CHUL ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  CHO YOUN JOUNG ,  KANG JI-NA ,  YAMADA NAOKI ,  CHOI JUNG-SIK

IPC: H01L21/316 ,  C07C31/32 ,  C07C49/92 ,  C07F5/06 ,  C23C16/18 ,  C23C16/40 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01G4/33 ,  H01G4/085 ,  H01G4/1272 ,  H01L27/10852 ,  H01L28/40

Abstract: PROBLEM TO BE SOLVED: To provide an aluminum precursor with high thermal stability, and a thin film formation method and a capacitor formation method using the same.SOLUTION: An aluminum precursor is represented by the specified formula (1). The aluminum precursor can be used for easily forming a thin film in an opening having a high aspect ratio, and can be suitably used for forming a dielectric film of a capacitor.

Abstract translation: 要解决的问题：提供具有高热稳定性的铝前体，以及使用其的薄膜形成方法和电容器形成方法。解决方案：铝前体由指定的式（1）表示。 铝前体可以用于在具有高纵横比的开口中容易地形成薄膜，并且可以适用于形成电容器的电介质膜。

公开(公告)号：JP2017114850A

公开(公告)日：2017-06-29

申请号：JP2016234316

申请日：2016-12-01

Applicant: 三星電子株式会社Samsung Electronics Co.,Ltd. ,  Samsung Electronics Co Ltd ,  三星電子株式会社Samsung Electronics Co.,Ltd. ,  株式会社Adeka ,  Adeka Corp ,  株式会社Adeka

Inventor： RYU SEUNG-MIN ,  LIM JAE-SOON ,  CHO YOUN-JOUNG ,  KOIDE YUKINOBU ,  YAMADA NAOKI ,  SHIRATORI TSUBASA

IPC: C07F9/00 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L27/108 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L21/02183 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  H01L21/0215 ,  H01L21/0228 ,  H01L21/823443 ,  H01L28/00

Abstract: 【課題】タンタル化合物、及びそれを利用した薄膜形成方法、並びに集積回路素子の製造方法の提供。【解決手段】式(I)で表されるタンタル化合物を利用する薄膜形成方法。[R1、R3及びR4は夫独立して、C1−10の直鎖/分岐型のアルキル基、アルケニル基等;R2はH、C1−10の直鎖/分岐型のアルキル基、アルケニル基、等]【選択図】図1

公开(公告)号：JP2013145787A

公开(公告)日：2013-07-25

申请号：JP2012004965

申请日：2012-01-13

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SHIMIZU MASAKO ,  YAMADA NAOKI ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA

IPC: H01L21/316 ,  C07F5/06 ,  C23C16/40

CPC classification number: C07F5/063 ,  C07F5/066 ,  C23C16/403 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/0228

Abstract: PROBLEM TO BE SOLVED: To provide aluminum compound which is not pyrophoric, is a liquid at room temperature, exhibits sufficient volatility and has high thermal stability; a starting material for forming a thin film containing the same; and a method for producing a thin film using the starting material.SOLUTION: Provided are: an aluminum compound represented by the specified chemical formula (I); a starting material for forming a thin film, which contains the aluminum compound; and a method for producing a thin film. In the method: a vapor which is obtained by vaporizing the starting material for forming a thin film and contains the aluminum compound is introduced into a film formation chamber in which a base is disposed; and the aluminum compound is decomposed and/or subjected to a chemical reaction so that a thin film containing aluminum is formed on the surface of the base.

Abstract translation: 要解决的问题：提供不是自燃的铝化合物，在室温下是液体，具有足够的挥发性并具有高的热稳定性; 用于形成含有该起始材料的薄膜的原料; 以及使用原料制造薄膜的方法。解决方案：提供：由特定化学式（I）表示的铝化合物; 用于形成含有铝化合物的薄膜的起始材料; 以及薄膜的制造方法。 在该方法中，通过汽化用于形成薄膜并含有铝化合物的原料而获得的蒸气被引入其中设置有基底的成膜室; 并且铝化合物分解和/或进行化学反应，使得在基材的表面上形成含有铝的薄膜。

公开(公告)号：JP2008120686A

公开(公告)日：2008-05-29

申请号：JP2006302680

申请日：2006-11-08

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： TANAKA SHINICHI ,  YAMADA NAOKI ,  SAKURAI ATSUSHI

IPC: C07C43/13 ,  C07F3/06 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To impart suitable properties such as volatility and melting point-lowering property to a bisalkoxy zinc compound having sufficient reactivity as a precursor for supplying zinc to thin films to provide a zinc compound especially suitable as a raw material for CVD. SOLUTION: The zinc compound is represented by general formula (1) (wherein, one of R 1 and R 2 is ethyl or isopropyl, and the other is H, methyl, ethyl or isopropyl; R 3 is a 1 to 4C alkyl). COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为具有足够的反应性的双烷氧基锌化合物赋予挥发性和降低熔点的适当性质作为向薄膜提供锌的前体，以提供特别适合作为原料的锌化合物 CVD。 解决方案：锌化合物由通式（1）表示（其中，R SP＆gt; 1＆lt; SP＆gt;和＆lt; SP＆gt; 2中的一个是乙基或异丙基，另一个是H ，甲基，乙基或异丙基; R 3是1至4个碳原子的烷基）。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007254298A

公开(公告)日：2007-10-04

申请号：JP2006077078

申请日：2006-03-20

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： MORISHIMA YUJI ,  YAMADA NAOKI ,  TANAKA SHINICHI

IPC: C07C49/92 ,  C07C45/77 ,  C07F5/00 ,  C07F5/06 ,  C23C16/40

Abstract: PROBLEM TO BE SOLVED: To provide a metal raw material suitable for forming a thin film comprising a group 13 metal.
SOLUTION: A raw material for forming the thin film comprises a β-diketone metal complex represented by chemical formula ML
3 (wherein, M represents a group 13 atom; and L represents an octane-2,4-dione residue, a 2,2-dimethyl-6-ethyldecane-3,5-dione residue or a 2,2,6,6-tetramethyl-1-(2-methoxyethoxy)heptane-3,5-dione residue). A method for producing the thin film by a chemical vapor deposition method using the raw material is provided.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供适于形成包含13族金属的薄膜的金属原料。 解决方案：用于形成薄膜的原料包括由化学式ML 3 表示的β-二酮金属络合物（其中，M表示13族原子; L表示辛烷-2 ，4-二酮残基，2,2-二甲基-6-乙基癸烷-3,5-二酮残基或2,2,6,6-四甲基-1-（2-甲氧基乙氧基）庚烷-3,5-二酮残基 ）。 提供了使用原料的化学气相沉积法制造薄膜的方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006328019A

公开(公告)日：2006-12-07

申请号：JP2005156765

申请日：2005-05-30

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： MORISHIMA YUJI ,  MIZUO KATSUHIDE ,  YAMADA NAOKI

IPC: C07C215/08 ,  C07F1/08 ,  C23C16/18

Abstract: PROBLEM TO BE SOLVED: To obtain a copper compound that is vaporized at a low temperature, is thermally stable and is suitable as a precursor of a raw material for forming a thin film useful for a thin film production having a vaporization process.
SOLUTION: The alcohol compound is represented by general formula (I). The copper compound comprises the alcohol compound as a ligand.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 待解决的问题：为了获得在低温下汽化的铜化合物，是热稳定的并且适合作为用于形成具有蒸发过程的薄膜生产的薄膜的原料的前体。 醇溶液由通式（I）表示。 铜化合物包含醇化合物作为配体。 版权所有（C）2007，JPO＆INPIT