公开(公告)号：KR20200132639A

公开(公告)日：2020-11-25

申请号：KR20190138404

申请日：2019-11-01

Applicant: SAMSUNG ELECTRONICS CO LTD ,  ADEKA CORP

Inventor： RYU SEUNG MIN ,  SAITO AKIO ,  KOIDE TAKANORI ,  YAMASHITA ATSUSHI ,  HARANO KAZUKI ,  PARK GYU HEE ,  LEE SOYOUNG ,  LIM JAESOON ,  CHO YOUNJOUNG

IPC: C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28

Abstract: 본발명에따르면금속화합물및 이를사용한반도체소자의제조방법이제공된다. 실시예들에따르면, 금속화합물은화학식 1로표시되는물질을포함할수 있다. [화학식 1] JPEGpat00026.jpg4190

公开(公告)号：EP2921472A4

公开(公告)日：2016-06-15

申请号：EP13854668

申请日：2013-10-21

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YAMADA NAOKI ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C23C16/16 ,  C23C16/40 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：DE112012003201T5

公开(公告)日：2014-06-26

申请号：DE112012003201

申请日：2012-05-15

Applicant: ADEKA CORP

Inventor： SAITO AKIO ,  WADA SENJI ,  YOSHINO TOMOHARU

IPC: C07C215/08 ,  C07F15/04 ,  C23C16/18 ,  H01L21/285

Abstract: Alkoxidverbindung, die durch die folgende Formel (I) dargestellt ist, und ein Rohmaterial für die Bildung eines dünnen Films, enthaltend die Alkoxidverbindung. In der Formel stellt R1 eine lineare oder verzweigte Alkylgruppe mit 2 bis 4 Kohlenstoffatomen dar, und R2 und R3 stellen jeweils eine lineare oder verzweigte Alkylgruppe mit 1 bis 4 Kohlenstoffatomen dar. In der Formel (I) ist R1 vorzugsweise eine Ethylgruppe. Es ist auch bevorzugt, dass einer der Reste R2 und R3, oder beide, eine Ethylgruppe ist/sind. Das Rohmaterial für die Bildung eines dünnen Films, beinhaltend eine Alkoxidverbindung, die durch die allgemeine Formel (I) dargestellt ist, wird vorzugsweise als ein Rohmaterial für die chemische Dampfabscheidung verwendet.

公开(公告)号：DE112012003201B4

公开(公告)日：2022-06-15

申请号：DE112012003201

申请日：2012-05-15

Applicant: ADEKA CORP

Inventor： WADA SENJI ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07F15/04 ,  C23C16/18 ,  H01L21/285

Abstract: Alkoxidverbindung, die durch die folgende Formel (I) dargestellt ist:; in der Formel stellt R1eine lineare oder verzweigte Alkylgruppe mit 2 bis 4 Kohlenstoffatomen dar, und R2und R3stellen jeweils eine lineare oder verzweigte Alkylgruppe mit 1 bis 4 Kohlenstoffatomen dar.

公开(公告)号：JP2013032309A

公开(公告)日：2013-02-14

申请号：JP2011169103

申请日：2011-08-02

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C215/08 ,  C07F15/04 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/045 ,  C07C215/08 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45553

Abstract: PROBLEM TO BE SOLVED: To provide a nickel compound which can be transported in a liquid state because of its low melting point, is easily vaporized because of its high vapor pressure, and is suitable as a raw material for depositing a thin film used in a method such as CVD which deposits a thin film by vaporizing a compound (precursor).SOLUTION: The nickel compound is an alkoxide compound represented by general formula (I), wherein Rrepresents a 2-4C linear or branched alkyl group; and Rrepresents a 1-4C linear or branched alkyl group.

Abstract translation: 要解决的问题：为了提供由于其低熔点而能够以液态运输的镍化合物，由于其高蒸气压而容易蒸发，并且适合作为沉积薄膜的原料 用于通过汽化化合物（前体）沉积薄膜的CVD等方法。 解决方案：镍化合物是由通式（I）表示的醇盐化合物，其中R 1表示2-4C直链或支链烷基; 并且R 2 表示1-4C直链或支链烷基。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010275602A

公开(公告)日：2010-12-09

申请号：JP2009130323

申请日：2009-05-29

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SATO HIROKI ,  SAITO AKIO

IPC: C23C16/42 ,  C07F7/10 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition which allows a film to be deposited at a low temperature of 300-500°C and which contains an organic silicon-containing compound providing a process having good reactivity. SOLUTION: The raw material for chemical vapor deposition includes an organic silicon-containing compound, represented by formula: HSi(CH 3 )(R 1 )(NR 2 R 3 ) (wherein, R 1 represents NR 4 R 5 or a 1C-5C alkyl group; R 2 and R 4 each represent a 1C-5C alkyl group or hydrogen atom; and R 3 and R 5 each represent a 1C-5C alkyl group). COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种化学气相沉积原料，其允许膜在300-500℃的低温下沉积并且含有提供具有良好反应性的方法的有机含硅化合物。 解决方案：用于化学气相沉积的原料包括由下式表示的有机含硅化合物：HSi（CH 3 ）（R 1 ）（NR < SP> 2 R 3 ）（其中，R 1 表示NR 4 1C-5C烷基; R SP＆gt; 2＆lt; SP＆gt;和＆lt; SP＆gt; 4＆lt; SP＆gt;各自表示1C-5C烷基或氢原子; R 3， SP> 5 各自表示1C-5C烷基）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2013216614A

公开(公告)日：2013-10-24

申请号：JP2012088410

申请日：2012-04-09

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C215/08 ,  C07F15/06 ,  C23C16/18

Abstract: PROBLEM TO BE SOLVED: To obtain a low melting point cobalt alkoxide compound having high vapor pressure and becoming a liquid at a normal temperature or with slight warming.SOLUTION: A cobalt alkoxide compound is represented by general formula (I) (wherein each of Rand Ris a 1-3C straight chain or branched alkyl group, and a sum of the number of carbons of Rand Ris 4, and each of Rand Ris a 1-2C alkyl group). A high quality cobalt-containing thin film can be produced with high productivity by using the compound as a raw material for thin film production by a CVD method.

Abstract translation: 要解决的问题：获得具有高蒸气压的低熔点钴醇盐化合物，并在常温下或稍微变暖时成为液体。溶解性：烷氧基化钴化合物由通式（I）表示（其中每个兰 R 3为直链或支链的1-3C烷基，Rand Ris4的碳数和Rand Ris为1-2C烷基的总和）。 通过使用化合物作为通过CVD法制造薄膜的原料，可以以高生产率制造高质量的含钴薄膜。

公开(公告)号：JP2012007192A

公开(公告)日：2012-01-12

申请号：JP2010141426

申请日：2010-06-22

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YOSHINAKA ATSUYA ,  WADA SENJI ,  SAKURAI ATSUSHI ,  SHIMIZU MASAKO ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C23C16/14

Abstract: PROBLEM TO BE SOLVED: To provide an alkaline-earth metal compound which has a low melting point or is a liquid, is stable to heat and is suitable for a CVD method, ALD method or the like.SOLUTION: The metal compound is represented by general formula (1) (wherein M is an alkaline earth metal atom; and Buis a second butyl group). Magnesium, calcium, strontium, barium and radium are exemplified as the alkaline earth metal atoms represented by M. The metal compound in which M is strontium is especially preferable as a raw material for thin film production used in CVD or ALD.

Abstract translation: 待解决的问题：为了提供具有低熔点或液体的碱土金属化合物，其对于热是稳定的并且适用于CVD法，ALD法等。 解决方案：金属化合物由通式（1）表示（其中M是碱土金属原子;并且Bu S 是第二丁基）。 镁，钙，锶，钡和镭作为由M表示的碱土金属原子。作为CVD或ALD中使用的薄膜制造用原料，特别优选其中M为锶的金属化合物。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010225663A

公开(公告)日：2010-10-07

申请号：JP2009068621

申请日：2009-03-19

Applicant: ADEKA CORP

Inventor： SATO HIROKI ,  MIZUO KATSUHIDE ,  SAITO AKIO ,  KAMIYAMA JUNJI

IPC: H01L21/318 ,  C07F7/12 ,  C23C16/42 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition, containing an organic silicon-containing compound, with which a film can be formed at a temperature as low as 300 to 500°C and which provides a process with good reactivity. SOLUTION: The raw material for chemical vapor deposition is characterized by comprising the organic silicon-containing compound represented by HSiCl(NR 1 R 2 )(NR 3 R 4 ) [wherein R 1 and R 3 independently represent an alkyl group having 1 to 4 carbon atoms, or a hydrogen atom; and R 2 and R 4 independently represent an alkyl group having 1 to 4 carbon atoms]. The raw material for chemical vapor deposition can be used particularly suitably as a raw material for forming a silicon nitride thin film on a substrate by a chemical vapor deposition technique. COPYRIGHT: (C)2011,JPO&INPIT

公开(公告)号：JP2012056860A

公开(公告)日：2012-03-22

申请号：JP2010199972

申请日：2010-09-07

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： WADA SENJI ,  SAKURAI ATSUSHI ,  SHIMIZU MASAKO ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07F17/00 ,  C07C215/08 ,  C07F7/28 ,  C23C16/18

Abstract: PROBLEM TO BE SOLVED: To provide a titanium precursor which excels in reactivity with a reactant suitable for a CVD method, an ALD method or the like, especially with an oxidant, and in which the improvement in film formation speed and the low-temperature thin film become possible.SOLUTION: The metal compound is expressed by general formula (1). In the formula, Rdenotes a hydrogen atom or a methyl group, Rdenotes a methyl group or an ethyl group, and Rdenotes a methyl group or an ethyl group.

Abstract translation: 要解决的问题：提供一种钛合金前体，它与适用于CVD法的反应物，ALD法等，尤其是氧化剂的反应性优异，其中成膜速度和低 温度薄膜成为可能。 解决方案：金属化合物由通式（1）表示。 在该式中，R 1 表示氢原子或甲基，R“表示甲基或乙基， 并且R 3 表示甲基或乙基。 版权所有（C）2012，JPO＆INPIT