公开(公告)号：US20170211184A1

公开(公告)日：2017-07-27

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Atsushi SAKURAI ,  Tsubasa SHIRATORI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C23C16/455 ,  C23C16/40 ,  C07F5/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

公开(公告)号：US20170050998A1

公开(公告)日：2017-02-23

申请号：US15306807

申请日：2015-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C07F15/06 ,  C23C16/44 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

Abstract translation: 根据本发明的钴化合物由通式（I）表示。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子的直链或支链烷基。 根据本发明的用于形成薄膜的原料含有由通式（I）表示的钴化合物。 本发明可以提供：具有低熔点并因此可以以液态运输并且可以在低温下分解并且还具有高蒸气压并因此容易蒸发的钴化合物; 以及使用钴化合物制备的用于形成薄膜的原料。