公开(公告)号：WO2008080097A3

公开(公告)日：2008-10-09

申请号：PCT/US2007088644

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

IPC: C11D11/00 ,  C11D1/62 ,  C11D3/00 ,  C11D3/02 ,  C11D3/24 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/50

CPC classification number: C11D3/0073 ,  C09K13/00 ,  C09K13/08 ,  C11D1/62 ,  C11D3/042 ,  C11D3/245 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.

Abstract translation: 用于从其上具有所述残余物的微电子装置清除等离子体后蚀刻残留物的清洁组合物和方法。 该组合物实现了对来自微电子器件的残留物材料（包括含钛，含铜，含钨和/或含钴的蚀刻后残留物）的高效清洁，同时不损伤层间电介质，金属互连材料， 和/或也存在于其上的封盖层。 另外，该组合物可用于从其上具有相同材料的微电子器件去除氮化钛层。

公开(公告)号：SG177915A1

公开(公告)日：2012-02-28

申请号：SG2011095296

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

Abstract: LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUESCleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal intercormect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.Figure 1