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    PENTABORANE(9) STORAGE AND DELIVERY
    3.
    发明申请
    PENTABORANE(9) STORAGE AND DELIVERY 审中-公开
    PENTABORANE（9）存储和交付

    公开(公告)号：WO2006083363A3

    公开(公告)日：2007-04-12

    申请号：PCT/US2005042490

    申请日：2005-11-23

    Applicant: ADVANCED TECH MATERIALS ,  OLANDER KARL W ,  ARNO JOSE I

    Inventor： OLANDER KARL W ,  ARNO JOSE I

    IPC: C23C14/48 ,  B67D99/00 ,  C23C14/14 ,  C23C16/38 ,  F17C7/04

    CPC classification number: C23C14/48 ,  C23C16/4485 ,  F17C2205/0338 ,  F17C2205/0391 ,  H01L21/265

    Abstract: A fluid storage and dispensing system (100) comprising a vessel (126) in a liquid nitrogen bath (128) for holding a pentaborane(9)-containing fluid at subatmospheric pressure. The pentaborane may be supplied from liquid or synthesis source (124), nitrogen from valve (120), which are controlled by gas regulators (R-I & R-2). The fluid storage and dispensing system may be communicatively connected via various valves (AV-I to AV- 16 & MV-I to MV-4) to a semiconductor or liquid crystal manufacturing facility, whereby the pentaborane(9) is used as a substitute for commercially available boron hydride compounds, such as diborane. The system may include the exhaust pump (130), scrubbing means (140), and three-way valve (162) to sample the concentration of pentaborane(9) output therefrom.

    Abstract translation: 一种液体储存和分配系统（100），其包括用于在低于大气压的压力下保持含有五硼烷（9）的流体的液氮浴（128）中的容器（126）。 五硼烷可以由液体或合成源（124），来自阀（120）的氮提供，其由气体调节剂（R-1和R-2）控制。 液体储存和分配系统可以经由各种阀（AV-1至AV-16和MV-1至MV-4）通信连接到半导体或液晶制造设备，由此使用五硼烷（9）作为替代物 用于市售的硼氢化合物，例如乙硼烷。 系统可以包括排气泵（130），洗涤装置（140）和三通阀（162），以对从其输出的五硼烷（9）的浓度进行采样。

    6.
    发明专利
    未知

    公开(公告)号：AT336291T

    公开(公告)日：2006-09-15

    申请号：AT98923580

    申请日：1998-05-20

    Applicant: ADVANCED TECH MATERIALS

    Inventor： OLANDER KARL W ,  MCMANUS JAMES V

    IPC: F17C5/02 ,  B01D53/04 ,  F17C5/06 ,  F17C11/00

    Abstract: A fill system and methodology for the manufacture of fluid storage and dispensing vessels containing sorbent material for holding a sorbable fluid, for on-demand dispensing of the fluid in the use of the vessel. The fill system and methodology are directed to minimizing the processing time required to dissipate the heat of sorption incident to the loading of the sorbable fluid onto the sorbent material, so that thermal equilibration time in the manufacture of the vessels is substantially reduced in relation to the use of only ambient convective air cooling for dissipation of the heat of sorption from the fluid-filled vessel.

    ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS
    8.
    发明专利
    ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 未知

    公开(公告)号：SG188150A1

    公开(公告)日：2013-03-28

    申请号：SG2013010889

    申请日：2009-02-11

    Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

    Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

    Abstract: ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMSCleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.[ No Suitable Figure ]

    10.
    发明专利
    未知

    公开(公告)号：DE69700437T2

    公开(公告)日：2000-03-16

    申请号：DE69700437

    申请日：1997-10-16

    Applicant: ADVANCED TECH MATERIALS

    Inventor： OLANDER KARL W

    IPC: B01D53/04 ,  F17C11/00

    Abstract: A gas storage and dispensing system, comprising: a vessel defining an interior volume therewithin for containing a bed of sorbent material having affinity for a gas to be stored and selectively dispensed from the vessel. A valve head, mass flow controller, regulator assembly, or the like may be provided selectively establishing gas flow communication for discharge of gas from the vessel. A gas-flow resistance reducing structure, such as a gas-permeable porous tube, inert packing, or dispersed inert material, is disposed in the interior volume of the vessel for reducing the resistance to flow of gas from the sorbent material bed during establishment of said gas flow communication for discharge of gas from the vessel.

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