公开(公告)号：WO2012024310A3

公开(公告)日：2012-05-31

申请号：PCT/US2011047942

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

IPC: C01B35/06 ,  C01B9/08

CPC classification number: C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 一种同位素富集的含硼化合物，其包含两个或更多个硼原子和至少一个氟原子，其中至少一个硼原子含有浓度或比率大于天然丰度浓度或其比率的所需硼同位素 。 该化合物可以具有B2F4的化学式。 描述了这些化合物的合成方法，以及使用这些化合物的离子注入方法，以及储存和分配容器，其中富含同位素的含硼化合物有利地包含在随后的分配用途中。

公开(公告)号：WO2013122986A8

公开(公告)日：2014-08-28

申请号：PCT/US2013025840

申请日：2013-02-13

Applicant: ADVANCED TECH MATERIALS

Inventor： BYL OLEG ,  STURM EDWARD A ,  TANG YING ,  YEDAVE SHARAD N ,  SWEENEY JOSEPH D ,  SERGI STEVEN G ,  CHAMBERS BARRY LEWIS

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Abstract translation: 描述了离子注入工艺和系统，其中使用碳掺杂剂源材料来实现碳掺杂。 描述了各种气体混合物，包括碳掺杂剂源材料，以及用于这种碳掺杂的气体的共流组合。 描述了在碳掺杂剂源材料中提供原位清洁剂，以及碳掺杂剂源气体，氢化物气体，氟化物气体，惰性气体，氧化物气体和其它气体的特定组合。

公开(公告)号：WO2011056515A3

公开(公告)日：2011-08-25

申请号：PCT/US2010053977

申请日：2010-10-25

Applicant: ADVANCED TECH MATERIALS ,  JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

Inventor： JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，提供掺杂剂气体进料管线中掺杂剂气体的冷却，以防止通过电弧室产生热量来加热和分解掺杂剂气体，例如使用硼源材料如B2F4或BF3的其它替代物。 描述了各种电弧室热管理装置，以及等离子体性质，特定流动布置，清洁过程，功率管理，eqillibrium变换，萃取光学器件的优化，流动通道中沉积物的检测以及源寿命优化的修改，以实现高效 离子注入系统的操作。

公开(公告)号：SG2014006068A

公开(公告)日：2014-03-28

申请号：SG2014006068

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：SG188215A1

公开(公告)日：2013-04-30

申请号：SG2013011028

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：SG173621A1

公开(公告)日：2011-09-29

申请号：SG2011057536

申请日：2009-08-12

Applicant: ADVANCED TECH MATERIALS

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER W KARL ,  TANG YING

Abstract: Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

公开(公告)号：SG10201406528PA

公开(公告)日：2014-12-30

申请号：SG10201406528P

申请日：2010-10-25

Applicant: ADVANCED TECH MATERIALS ,  ENTEGRIS INC

Inventor： JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

Abstract: ION IMPLANTATION SYSTEM AND An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B F or 2 4 other alternatives to BF . Various arc chamber 3 thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics,detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system. Fig.l -34-

公开(公告)号：SG188150A1

公开(公告)日：2013-03-28

申请号：SG2013010889

申请日：2009-02-11

Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Abstract: ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMSCleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.[ No Suitable Figure ]

公开(公告)号：SG11201404872SA

公开(公告)日：2014-09-26

申请号：SG11201404872S

申请日：2013-02-13

Applicant: ADVANCED TECH MATERIALS

Inventor： BYL OLEG ,  STURM EDWARD A ,  TANG YING ,  YEDAVE SHARAD N ,  SWEENEY JOSEPH D ,  SERGI STEVEN G ,  CHAMBERS BARRY LEWIS

IPC: H01J37/317 ,  H01L21/265

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：EP2494581A4

公开(公告)日：2015-03-18

申请号：EP10828832

申请日：2010-10-25

Applicant: ADVANCED TECH MATERIALS

Inventor： JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

IPC: H01J37/317 ,  H01J37/08 ,  H01L21/265

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022