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    APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES
    2.
    发明申请
    APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES 审中-公开
    从固体材料中制备化合物或其中间体的装置和方法，以及使用这些化合物和中间体

    公开(公告)号：WO2012030679A3

    公开(公告)日：2012-07-05

    申请号：PCT/US2011049473

    申请日：2011-08-28

    Applicant: ADVANCED TECH MATERIALS ,  BYL OLEG ,  JONES EDWARD E ,  PYDI CHIRANJEEVI ,  SWEENEY JOSEPH D

    Inventor： BYL OLEG ,  JONES EDWARD E ,  PYDI CHIRANJEEVI ,  SWEENEY JOSEPH D

    IPC: H01L21/265

    CPC classification number: B01J8/0285 ,  B01J8/0465 ,  B01J2208/00017 ,  B01J2208/00389 ,  B01J2208/00433 ,  B01J2208/00539 ,  C01B35/061

    Abstract: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

    Abstract translation: 描述了一种装置，其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域，以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。 该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。 反应气体和反应性固体的反应可以在第一反应区进行，反应气体和中间产物的反应在第二反应区中进行。 在具体实施方案中，反应气体和中间产物的反应是可逆的，并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区，以抑制形成反应性固体的反应。

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    3.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统的清洁

    公开(公告)号：WO2007127865A3

    公开(公告)日：2008-12-11

    申请号：PCT/US2007067542

    申请日：2007-04-26

    Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    IPC: C25F1/00 ,  C25F3/12

    CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    Abstract translation: 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    ION IMPLANTATION SYSTEM AND METHOD
    10.
    发明专利
    ION IMPLANTATION SYSTEM AND METHOD 未知

    公开(公告)号：SG10201406528PA

    公开(公告)日：2014-12-30

    申请号：SG10201406528P

    申请日：2010-10-25

    Applicant: ADVANCED TECH MATERIALS ,  ENTEGRIS INC

    Inventor： JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

    Abstract: ION IMPLANTATION SYSTEM AND An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B F or 2 4 other alternatives to BF . Various arc chamber 3 thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics,detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system. Fig.l -34-

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