公开(公告)号：JPH04316316A

公开(公告)日：1992-11-06

申请号：JP10970091

申请日：1991-04-15

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MIKI ICHIJI ,  SAKAMOTO KUNIHIRO ,  SAKAMOTO SUMINORI ,  MATSUHATA HIROFUMI ,  OKUMURA HAJIME ,  YOSHIDA SADAJI

IPC: H01L21/20

Abstract: PURPOSE:To obtain a method for growing crystal over a critical thickness with no restriction of the in-lane lattice constant on the surface of substrate crystal. CONSTITUTION:Superlattice crystal 4 composed of first and second constituent crystals 2, 3 is laminated over a critical thickness on a substrate crystal 1 to cause dislocation T therein thus growing crystal having in-plane lattice constant different from that of the substrate crystal 1.