公开(公告)号：WO2011056519A2

公开(公告)日：2011-05-12

申请号：PCT/US2010/053982

申请日：2010-10-25

Applicant: ASM INTERNATIONAL N.V. ,  ASM AMERICA INC. ,  PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: H01L21/205

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb-Te, Ge-Sb and Ge-Sb-Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb( SiR 1 R 2 R 3 ) 3 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Abstract translation: 提供了用于形成含有Sb，Sb-Te，Ge-Sb和Ge-Sb-Te薄膜的含VA薄膜的原子层沉积（ALD）工艺，以及相关组合物和结构。 优选使用Sb（SiR1R2R3）3的Sb前体，其中R1，R2和R3是烷基。 As，Bi和P前体也被描述。 还提供了用于合成这些Sb前体的方法。 还提供了在相变存储器件中使用Sb薄膜的方法。

公开(公告)号：WO2009132207A3

公开(公告)日：2009-10-29

申请号：PCT/US2009/041561

申请日：2009-04-23

Applicant: ASM INTERNATIONAL N.V. ,  ASM AMERICA, INC.

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELA, Markku

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/16 ,  H01L21/205

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb-Te, Ge-Te, Ge-Sb-Te, Bi-Te, and Zn-Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb-Se, Ge-Se, Ge-Sb-Se, Bi-Se, and Zn-Se thin films are also provided. Te and Se precursors of the formula (Te,Se)( SiR 1 R 2 R 3 ) 2 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：WO2016191432A1

公开(公告)日：2016-12-01

申请号：PCT/US2016/033955

申请日：2016-05-24

Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

Inventor： SARNET, Tiina ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/22 ,  H01L21/02 ,  H01L31/18

CPC classification number: C23C16/305 ,  C01G39/06 ,  C01P2004/03 ,  C23C16/45553 ,  G01N30/72 ,  H01L21/02568 ,  H01L21/0262

Abstract: Processes for forming Mo and W containing thin films, such as MoS 2 , WS 2 , MoSe 2 , and WSe 2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

Abstract translation: 提供了用于形成包含MoS2，WS2，MoSe2和WSe2薄膜的Mo和W的工艺。 还提供了用于合成Mo或Wβ-二酮前体的方法。 另外，提供了用于形成含有Mo或W的2D材料的方法

公开(公告)号：EP2494587A2

公开(公告)日：2012-09-05

申请号：EP10828836.6

申请日：2010-10-25

Applicant: ASM International N.V.

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: H01L21/205

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：EP2279285A2

公开(公告)日：2011-02-02

申请号：EP09735227.2

申请日：2009-04-23

Applicant: ASM International N.V.

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELA, Markku

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/16 ,  H01L21/205

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb-Te, Ge-Te, Ge-Sb-Te, Bi-Te, and Zn-Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb-Se, Ge-Se, Ge-Sb-Se, Bi-Se, and Zn-Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR 1 R 2 R 3 ) 2 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Abstract translation: 提供了用于形成诸如Sb-Te，Ge-Te，Ge-Sb-Te，Bi-Te和Zn-Te薄膜的含Te薄膜的原子层沉积（ALD）工艺。 还提供了ALD工艺用于形成含Se的薄膜，例如Sb-Se，Ge-Se，Ge-Sb-Se，Bi-Se和Zn-Se薄膜。 式（Te，Se）（SiR 1 R 2 R 3）2的Te和Se前体优选使用，其中R 1，R 2和R 3是烷基。 还提供了合成这些Te和Se前体的方法。 还提供了在相变存储器件中使用Te和Se薄膜的方法。

公开(公告)号：EP2494587B1

公开(公告)日：2020-07-15

申请号：EP10828836.6

申请日：2010-10-25

Applicant: ASM International N.V.

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: H01L21/205 ,  C23C16/455 ,  C23C16/30 ,  H01L21/02 ,  H01L45/00

公开(公告)号：EP2279285B1

公开(公告)日：2015-02-11

申请号：EP09735227.2

申请日：2009-04-23

Applicant: ASM International N.V.

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELA, Markku

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/16 ,  H01L21/205

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb-Te, Ge-Te, Ge-Sb-Te, Bi-Te, and Zn-Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb-Se, Ge-Se, Ge-Sb-Se, Bi-Se, and Zn-Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR 1 R 2 R 3 ) 2 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Abstract translation: 提供了用于形成诸如Sb-Te，Ge-Te，Ge-Sb-Te，Bi-Te和Zn-Te薄膜的Te含量薄膜的原子层沉积（ALD）工艺。 还提供了用于形成诸如Sb-Se，Ge-Se，Ge-Sb-Se，Bi-Se和Zn-Se薄膜的含Se薄膜的ALD工艺。 优选使用式（Te，Se）（SiR 1 R 2 R 3）2的Te和Se前体，其中R 1，R 2和R 3是烷基。 还提供了用于合成这些Te和Se前体的方法。 还提供了在相变存储器件中使用Te和Se薄膜的方法。