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    METROLOGY METHOD AND APPARATUS AND ASSOCIATED COMPUTER PROGRAM
    1.
    发明申请
    METROLOGY METHOD AND APPARATUS AND ASSOCIATED COMPUTER PROGRAM 审中-公开

    公开(公告)号：WO2018197198A1

    公开(公告)日：2018-11-01

    申请号：PCT/EP2018/059108

    申请日：2018-04-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： FAN, Chi-Hsiang ,  VAN DER SCHAAR, Maurits ,  ZHANG, Youping

    IPC: G03F7/20

    Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.

    METHOD FOR DETERMINING STACK CONFIGURATION OF SUBSTRATE
    2.
    发明申请
    METHOD FOR DETERMINING STACK CONFIGURATION OF SUBSTRATE 审中-公开

    公开(公告)号：WO2019224176A1

    公开(公告)日：2019-11-28

    申请号：PCT/EP2019/063053

    申请日：2019-05-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： LI, Danying ,  FAN, Chi-Hsiang ,  ELMALK, Abdalmohsen ,  ZHANG, Youping ,  CHEN, Jay, Jianhui ,  HUANG, Kui-Jun

    IPC: G03F7/20

    Abstract: Described herein is are method for determining a stack configuration for a substrate subjected a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map; and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

    METHOD FOR DETERMINING AN ETCH PROFILE OF A LAYER OF A WAFER FOR A SIMULATION SYSTEM
    4.
    发明申请
    METHOD FOR DETERMINING AN ETCH PROFILE OF A LAYER OF A WAFER FOR A SIMULATION SYSTEM 审中-公开

    公开(公告)号：WO2020020759A1

    公开(公告)日：2020-01-30

    申请号：PCT/EP2019/069460

    申请日：2019-07-19

    Applicant: ASML NETHERLANDS B.V.

    Inventor： FAN, Chi-Hsiang ,  CHEN, Feng ,  ZHAO, Wangshi ,  ZHANG, Youping

    IPC: G03F7/20 ,  G06F17/50

    Abstract: A method for determining an etch profile is described. The method comprises determining a starting masking layer profile. Loading information is determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information is determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information is determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

    AUTOMATIC SELECTION OF METROLOGY TARGET MEASUREMENT RECIPES
    5.
    发明申请
    AUTOMATIC SELECTION OF METROLOGY TARGET MEASUREMENT RECIPES 审中-公开
    量规目标测量方案的自动选择

    公开(公告)号：WO2018041550A1

    公开(公告)日：2018-03-08

    申请号：PCT/EP2017/069969

    申请日：2017-08-07

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WANG, Daimian ,  ZHANG, Shengrui ,  FAN, Chi-Hsiang

    IPC: G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7046

    Abstract: A method including performing a first simulation for each of a plurality of different metrology target measurement recipes using a first model, selecting a first group of metrology target measurement recipes from the plurality of metrology target measurement recipes, the first group of metrology target measurement recipes satisfying a first rule, performing a second simulation for each of the metrology target measurement recipes from the first group using a second model, and selecting a second group of metrology target measurement recipes from the first group, the second group of metrology target measurement recipes satisfying a second rule, the first model being less accurate or faster than the second model and/or the first rule being less restrictive than the second rule.

    Abstract translation: 包括使用第一模型针对多个不同度量衡目标测量配方中的每一个执行第一仿真，从多个度量衡目标测量配方中选择第一组度量目标测量配方， 第一组度量目标测量配方满足第一规则，使用第二模型针对来自第一组的每个计量目标测量配方执行第二模拟，并且从第一组中选择第二组度量目标测量配方，第二组 满足第二规则的计量目标测量配方组，第一模型比第二模型更不准确或更快，和/或第一规则比第二规则限制更少。

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