公开(公告)号：US20240297013A1

公开(公告)日：2024-09-05

申请号：US18661389

申请日：2024-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper Frans Mathijs VAN RENS ,  Thomas Jarik HUISMAN ,  Willem Louis VAN MIERLO ,  Hermanus Adrianus DILLEN

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1477 ,  H01J37/28

Abstract: Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method of determining the charging induced distortion of a SEM image, the method comprising: determining, at each of a plurality of locations in a SEM image of at least part of a sample, a deflection of an illuminating charged particle beam caused by a charging of the sample at the location; and determining the charging induced distortion of the SEM image in dependence on the determined deflections at each of the plurality of locations in the SEM image.

公开(公告)号：US20240212108A1

公开(公告)日：2024-06-27

申请号：US18596540

申请日：2024-03-05

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Jasper Frans Mathijs VAN RENS

IPC: G06T5/50 ,  G06T5/80 ,  G06T7/33 ,  H01J37/22

CPC classification number: G06T5/50 ,  G06T5/80 ,  G06T7/33 ,  H01J37/222 ,  G06T2207/10061 ,  H01J2237/2809

Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a first scanning direction; obtaining a second SEM image of the target feature on the sample from a second electron beam scan in a second scanning direction different from the first scanning direction; aligning the first SEM image and the second SEM image; and generating an output image based a combination of the first SEM image and the second SEM image.

公开(公告)号：US20230335374A1

公开(公告)日：2023-10-19

申请号：US18019088

申请日：2021-07-27

Applicant: ASML Netherlands B.V.

Inventor： Benoit Herve GAURY ,  Jun JIANG ,  Bruno LA FONTAINE ,  Shakeeb Bin HASAN ,  Kenichi KANAI ,  Jasper Frans Mathijs VAN RENS ,  Cyrus Emil TABERY ,  Long MA ,  Oliver Desmond PATTERSON ,  Jian ZHANG ,  Chih-Yu JEN ,  Yixiang WANG

IPC: H01J37/26 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/228 ,  H01J2237/2482

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

公开(公告)号：US20230298852A1

公开(公告)日：2023-09-21

申请号：US18120278

申请日：2023-03-10

Applicant: ASML Netherlands B.V.

Inventor： Benoit Herve GAURY ,  Jasper Frans Mathijs VAN RENS

IPC: H01J37/26 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/244 ,  H01J37/28

Abstract: A method of measuring a delay time of a propagation of a signal in a line in a circuit structure, the method comprises irradiating the line by pulses of a charged particle beam, wherein a pulse repetition frequency of the pulses of the charged particle beam is varied. The method further comprises measuring, for each of the pulse repetition frequencies, a secondary charged particle emission responsive to the irradiating the line by the pulses of the charged particle beam at the respective pulse repetition frequency, and deriving the delay time of the line based on the secondary charged particle emission responsive to the varying of the pulse repetition frequency.