公开(公告)号：US20250044709A1

公开(公告)日：2025-02-06

申请号：US18718306

申请日：2022-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Willem Louis VAN MIERLO

IPC: G03F7/00 ,  G06T7/00

Abstract: Systems, methods, and media for determining a processing parameter associated with a lithography process. In some embodiments, image data of features on a substrate may be obtained, and the image data may be analyzed in Fourier space. Based on the analysis, an amplitude and a phase may be determined, and an overlay of the features may be determined based on the amplitude and the phase.

公开(公告)号：US20230245851A1

公开(公告)日：2023-08-03

申请号：US18126322

申请日：2023-03-24

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus DILLEN ,  Wim Tjibbo TEL ,  Willem Louis VAN MIERLO

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US20240297013A1

公开(公告)日：2024-09-05

申请号：US18661389

申请日：2024-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper Frans Mathijs VAN RENS ,  Thomas Jarik HUISMAN ,  Willem Louis VAN MIERLO ,  Hermanus Adrianus DILLEN

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1477 ,  H01J37/28

Abstract: Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method of determining the charging induced distortion of a SEM image, the method comprising: determining, at each of a plurality of locations in a SEM image of at least part of a sample, a deflection of an illuminating charged particle beam caused by a charging of the sample at the location; and determining the charging induced distortion of the SEM image in dependence on the determined deflections at each of the plurality of locations in the SEM image.

公开(公告)号：US20230082858A1

公开(公告)日：2023-03-16

申请号：US17797506

申请日：2021-01-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan WILDENBERG ,  Hermanus Adrianus DILLEN ,  Fan FENG ,  Ronald VAN ITTERSUM ,  Willem Louis VAN MIERLO ,  Koen THUIJS

IPC: G03F7/20

Abstract: A method and associated apparatuses for controlling a process of manufacturing semiconductor devices on a substrate. The method includes obtaining process data relating to the process and determining a correction for the process based on the process data and a first control objective associated with the devices on the substrate. A first probability of the first control objective being achievable is determined and the correction adjusted based on the probability and at least a second control objective having a second probability of being achievable compared to the first control objective.