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公开(公告)号:WO2019211083A1
公开(公告)日:2019-11-07
申请号:PCT/EP2019/059477
申请日:2019-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor: DE GRAAF, Dennis , BEAUDRY, Richard , BIRON, Maxime , JANSSEN, Paul , KATER, Thijs , KORNELSEN, Kevin , KUIJKEN, Michael, Alfred, Josephus , KUNTZEL, Jan, Hendrik, Willem , MARTEL, Stephane , NASALEVICH, Maxim, Aleksandrovich , SALMASO, Guido , VAN ZWOL, Pieter-Jan
Abstract: A wafer comprising a mask on one face and at least one layer on the opposite face, wherein the mask comprises at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle comprising the steps of: providing a wafer comprising a mask on one face and at least one layer on the opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle comprising the steps of: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may comprise a metal nitride layer.
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公开(公告)号:WO2019091932A1
公开(公告)日:2019-05-16
申请号:PCT/EP2018/080219
申请日:2018-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor: HOUWELING, Zomer, Silvester , ANDE, Chaitanya Krishna , DE GRAAF, Dennis , KATER, Thijs , KUIJKEN, Michael, Alfred, Josephus , VALEFI, Mahdiar
Abstract: A pellicle comprising a metal oxysilicide layer. Also disclosed in a pellicle comprising a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. Also disclosed is a method of manufacturing a pellicle for a lithographic apparatus, said method comprising: providing a metal oxysilicide layer, a lithographic assembly (LA) comprising a pellicle (15) comprising a metal oxysilicide layer, and the use of a pellicle comprising a metal oxysilicide layer in a lithographic apparatus.
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公开(公告)号:EP3707557A1
公开(公告)日:2020-09-16
申请号:EP18796950.6
申请日:2018-11-06
Applicant: ASML Netherlands B.V.
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公开(公告)号:EP3788442A1
公开(公告)日:2021-03-10
申请号:EP19716199.5
申请日:2019-04-12
Applicant: ASML Netherlands B.V.
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