公开(公告)号：WO2015049087A1

公开(公告)日：2015-04-09

申请号：PCT/EP2014/068932

申请日：2014-09-05

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  MENGER, Jasper ,  DECKERS, David ,  HAN, David ,  KOOPMAN, Adrianus ,  LYULINA, Irina ,  MIDDLEBROOKS, Scott ,  VAN HAREN, Richard ,  WILDENBERG, Jochem

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092 ,  G06F17/30572

Abstract: In a lithographic process product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each wafer. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose the set of said vectors representing the wafers in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using said component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

Abstract translation: 在光刻工艺中，诸如半导体晶片的产品单元经受光刻图案化操作和化学和物理处理操作。 在执行过程期间分阶段进行对准数据或其他测量，以获得表示在每个晶片上空间分布的点处测量的位置偏差或其他参数的对象数据。 该对象数据用于通过执行多变量分析来获取诊断信息，以将表示所述多维空间中的晶片的所述矢量的集合分解为一个或多个分量向量。 使用所述分量向量提取关于工业过程的诊断信息。 可以基于提取的诊断信息来控制后续产品单元的工业过程的性能。

公开(公告)号：WO2016091529A1

公开(公告)日：2016-06-16

申请号：PCT/EP2015/076432

申请日：2015-11-12

Applicant: ASML NETHERLANDS B.V.

Inventor： MENGER, Jasper ,  ABEN, Paul, Cornelis, Hubertus ,  MOS, Everhardus, Cornelis

IPC: G03F9/00

CPC classification number: G03F9/7046

Abstract: Offline metrology measurements 804 are performed on wafer substrates that have been subjected to lithographic processing. Model parameters 808 are calculated 806 by fitting the measurements to an extended high-order substrate model defined 802 using a combination of basis functions that include an edge basis function related to a substrate edge. The radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may for example be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled 820 using the calculated high-order substrate model parameters 808, in combination 81 8 with low-order substrate model parameters 816 obtained by fitting 814 inline measurements 812 to a low order model 810.

Abstract translation: 在经过光刻处理的晶片衬底上进行离线测量测量804。 通过使用包括与衬底边缘相关的边缘基函数的基函数的组合来将测量拟合到限定802的扩展高阶衬底模型来计算806，模型参数808。 径向基础函数可以用距基板边缘的距离表示。 边缘基函数可以例如是指数衰减函数或有理函数。 使用计算出的高阶衬底模型参数808（组合81,8）与通过将814个在线测量812拟合到低阶模型810而获得的低阶衬底模型参数816来控制后续衬底的平版印刷处理。