公开(公告)号：WO2011101192A1

公开(公告)日：2011-08-25

申请号：PCT/EP2011/050631

申请日：2011-01-18

Applicant: ASML Netherlands B.V. ,  MIDDLEBROOKS, Scott

Inventor： MIDDLEBROOKS, Scott

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70616

Abstract: System and methods estimate model parameters of a lithographic apparatus and control lithographic processing by a lithographic apparatus. An exposure is performed using a lithographic apparatus across a wafer. A set of predetermined wafer measurement locations is obtained. Discrete orthonormal polynomials are generated using the predetermined substrate measurement locations. The overlay errors arising from the exposure are measured at the predetermined locations to obtain overlay measurements. The estimated model parameters of the lithographic apparatus are calculated from the overlay measurements by using the discrete orthogonal polynomials as a basis function to model the overlay across the wafer. Finally, the estimated model parameters are used to control the lithographic apparatus in order to provide corrected overlay across the wafer.

Abstract translation: 系统和方法估计光刻设备的模型参数并通过光刻设备控制光刻处理。 使用光刻设备在晶片上进行曝光。 获得一组预定的晶片测量位置。 使用预定的基板测量位置产生离散正交多项式。 在预定位置测量曝光引起的重叠误差，以获得覆盖测量值。 通过使用离散正交多项式作为对跨越晶片的覆盖进行建模的基础函数，从重叠测量计算光刻设备的估计模型参数。 最后，估计的模型参数用于控制光刻设备，以便在晶片上提供校正的覆盖。

公开(公告)号：WO2013079270A1

公开(公告)日：2013-06-06

申请号：PCT/EP2012/071427

申请日：2012-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： MIDDLEBROOKS, Scott ,  PLUIJMS, René ,  COOGANS, Martyn ,  NOOT, Marc

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70525 ,  G03F7/70641

Abstract: Disclosed is an inspection method, and corresponding apparatus, enabling classification of pupil images according to a process variable. The method comprises acquiring diffraction pupil images of a plurality of structures formed on a substrate during a lithographic process. A process variable of the lithographic process was varied between formation of the structures, the variation of the process variable resulting in a variation in the diffraction pupil images. The method further comprised determining at least one discriminant function for the diffraction pupil images, the discriminant function being able to classify the pupil images in terms of the process variable.

Abstract translation: 公开了一种检查方法和相应的装置，使得能够根据过程变量对瞳孔图像进行分类。 该方法包括在光刻工艺期间获取在基板上形成的多个结构的衍射光瞳图像。 光刻过程的过程变量在结构的形成之间变化，过程变量的变化导致衍射光瞳图像的变化。 该方法还包括确定用于衍射光瞳图像的至少一个判别函数，所述判别函数能够根据过程变量对瞳孔图像进行分类。

公开(公告)号：WO2015049087A1

公开(公告)日：2015-04-09

申请号：PCT/EP2014/068932

申请日：2014-09-05

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  MENGER, Jasper ,  DECKERS, David ,  HAN, David ,  KOOPMAN, Adrianus ,  LYULINA, Irina ,  MIDDLEBROOKS, Scott ,  VAN HAREN, Richard ,  WILDENBERG, Jochem

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092 ,  G06F17/30572

Abstract: In a lithographic process product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each wafer. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose the set of said vectors representing the wafers in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using said component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

Abstract translation: 在光刻工艺中，诸如半导体晶片的产品单元经受光刻图案化操作和化学和物理处理操作。 在执行过程期间分阶段进行对准数据或其他测量，以获得表示在每个晶片上空间分布的点处测量的位置偏差或其他参数的对象数据。 该对象数据用于通过执行多变量分析来获取诊断信息，以将表示所述多维空间中的晶片的所述矢量的集合分解为一个或多个分量向量。 使用所述分量向量提取关于工业过程的诊断信息。 可以基于提取的诊断信息来控制后续产品单元的工业过程的性能。

公开(公告)号：WO2010006935A3

公开(公告)日：2010-01-21

申请号：PCT/EP2009/058404

申请日：2009-07-03

Applicant: ASML Netherlands B.V. ,  MOS, Everhardus ,  MEGENS, Henricus ,  VAN DER SCHAAR, Maurits ,  SIMONS, Hubertus ,  MIDDLEBROOKS, Scott

Inventor： MOS, Everhardus ,  MEGENS, Henricus ,  VAN DER SCHAAR, Maurits ,  SIMONS, Hubertus ,  MIDDLEBROOKS, Scott

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.