公开(公告)号：WO2014053334A1

公开(公告)日：2014-04-10

申请号：PCT/EP2013/069540

申请日：2013-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie ,  KREUZER, Justin ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  NIJMEIJER, Gerrit, Johannes ,  SWINDAL, J. Christian ,  TINNEMANS, Patricius Aloysius Jacobus ,  VAN HAREN, Richard

IPC: G03F9/00

CPC classification number: G01B11/002 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  H01L22/12

Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.

Abstract translation: 一种用于测量标记位置的装置，该装置包括使用由照明装置提供的辐射将辐射引导到标记上的物镜; 接收由标记衍射并被镜面反射的辐射的光学装置，其中所述光学装置被配置为提供第一图像和第二图像，所述第一图像通过相干地添加镜面反射辐射和正衍射级辐射而形成，并且所述第二图像 通过相干地加入镜面反射辐射和负衍射级辐射形成; 以及检测装置，用于检测第一和第二图像的辐射强度的变化，并计算标记在测量方向上的位置。

公开(公告)号：WO2015049087A1

公开(公告)日：2015-04-09

申请号：PCT/EP2014/068932

申请日：2014-09-05

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  MENGER, Jasper ,  DECKERS, David ,  HAN, David ,  KOOPMAN, Adrianus ,  LYULINA, Irina ,  MIDDLEBROOKS, Scott ,  VAN HAREN, Richard ,  WILDENBERG, Jochem

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092 ,  G06F17/30572

Abstract: In a lithographic process product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each wafer. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose the set of said vectors representing the wafers in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using said component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

Abstract translation: 在光刻工艺中，诸如半导体晶片的产品单元经受光刻图案化操作和化学和物理处理操作。 在执行过程期间分阶段进行对准数据或其他测量，以获得表示在每个晶片上空间分布的点处测量的位置偏差或其他参数的对象数据。 该对象数据用于通过执行多变量分析来获取诊断信息，以将表示所述多维空间中的晶片的所述矢量的集合分解为一个或多个分量向量。 使用所述分量向量提取关于工业过程的诊断信息。 可以基于提取的诊断信息来控制后续产品单元的工业过程的性能。

公开(公告)号：WO2011003736A1

公开(公告)日：2011-01-13

申请号：PCT/EP2010/058877

申请日：2010-06-23

Applicant: ASML NETHERLANDS B.V. ,  VAN DER HEIJDEN, Rob ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits

Inventor： VAN DER HEIJDEN, Rob ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70466 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70683 ,  G03F9/7076

Abstract: A method for providing temporary measurement targets during a multiple patterning process which can be removed in the completion of the process. The metrology target is defined in either the first or the second exposure of a multiple exposure process and whether or not it is temporary or made permanent is selected according to whether or not the area of the target is covered or cleared out in the other exposure. The use of temporary targets reduces the amount of space on the substrate that must be devoted to targets.

Abstract translation: 一种用于在多次图案化处理期间提供临时测量目标的方法，其可以在完成该过程时被去除。 计量目标是在多次曝光过程的第一次曝光或第二次曝光中定义的，以及根据目标的区域是否在另一曝光中被覆盖或清除而选择是临时还是永久性。 临时目标的使用减少了必须用于目标的基板上的空间。

公开(公告)号：WO2014032833A1

公开(公告)日：2014-03-06

申请号：PCT/EP2013/063499

申请日：2013-06-27

Applicant: ASML NETHERLANDS B.V.

Inventor： CEKLI, Hakki, Ergun ,  LYULINA, Irina ,  TENNER, Manfred ,  VAN HAREN, Richard ,  VAN DER SANDEN, Stefan

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

Abstract translation: 一种变形图案识别方法，包括提供一个或多个变形图案，每个变形图案与可由处理装置引起的基板的变形相关联; 将第一图案转印到基板，所述第一图案至少包括N个对准标记，其中每个对准标记位于相应的预定标称位置; 处理基板; 通过将相应的标称位置与相应的测量位置进行比较来测量N个对准标记的位置并确定N个对准标记的对准标记位移; 将至少一个变形图案拟合到所测量的对准标记位移; 确定每个拟合变形模式的精度值，精度值代表相应拟合精度; 使用所确定的精度值，确定是否存在相关联的变形模式。

公开(公告)号：WO2011012412A1

公开(公告)日：2011-02-03

申请号：PCT/EP2010/059698

申请日：2010-07-07

Applicant: ASML NETHERLANDS B.V. ,  WANG, Jiun-Cheng ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits ,  LEE, Hyun-Woo ,  REINER, Jungblut

Inventor： WANG, Jiun-Cheng ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits ,  LEE, Hyun-Woo ,  REINER, Jungblut

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: An mark used in the determination of overlay error comprises sub-features (46), the sub-features having a smallest pitch approximately equal to the smallest pitch of the product features. The sensitivity to distortions and aberrations is therefore the same as that for the product features. However, when the mark is developed the sub-features merge and only the outline of the larger feature is developed.

Abstract translation: 用于确定覆盖误差的标记包括子特征（46），子特征具有近似等于产品特征的最小间距的最小间距。 因此，畸变和像差的敏感度与产品特征的敏感性相同。 然而，当标记被开发时，子特征合并，并且仅开发较大特征的轮廓。