公开(公告)号：WO2020094286A1

公开(公告)日：2020-05-14

申请号：PCT/EP2019/075531

申请日：2019-09-23

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  KIERS, Antoine, Gaston, Marie ,  TIMOSHKOV, Vadim Yourievich ,  DILLEN, Hermanus, Adrianus ,  ZHANG, Yichen ,  WANG, Te-Sheng ,  CHEN, Tzu-Chao

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining an image-metric of features on a substrate, the method comprising: obtaining a first image of a plurality of features on a substrate; obtaining one or more further images of a corresponding plurality of features on the substrate, wherein at least one of the one or more further images is of a different layer of the substrate than the first image; generating aligned versions of the first and one or more further images by performing an alignment process on the first and one or more further images; and calculating an image-metric in dependence on a comparison of the features in the aligned version of the first image and the corresponding features in the aligned versions of the one or more further images.

公开(公告)号：WO2017108432A1

公开(公告)日：2017-06-29

申请号：PCT/EP2016/080266

申请日：2016-12-08

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Te-Sheng ,  WAN, Xiang

IPC: G03F7/20

CPC classification number: G03F7/70616 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70641

Abstract: Provided is a process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

Abstract translation: 提供了表征构图过程的过程窗口的过程，所述过程包括：获得图案的一组检查位置，所述图案通过图案化过程限定要应用于基底的特征 所述一组检查位置对应于一组特征，所述一组特征根据所述各特征对所述图案化过程的一个或多个工艺特性的变化的敏感性从所述特征中选择; 在所述图案化工艺的变化的工艺特性下图案化一个或多个衬底; 并且针对处理特性中的每个变化确定该组特征中的至少一些特征是否在相应的检查位置处在一个或多个基板上产生不可接受的图案化结构。

公开(公告)号：WO2022106132A1

公开(公告)日：2022-05-27

申请号：PCT/EP2021/078870

申请日：2021-10-19

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Te-Sheng

IPC: G03F7/20 ,  G06T7/00

Abstract: Disclosed is a method for aligning a measured image of a pattern printed on a substrate with a design layout. The method includes: obtaining a design layout of a pattern to be printed on a substrate and a measured image of the pattern printed on the substrate; performing a simulation process to generate a plurality of simulated contours of the design layout for a plurality of process conditions of a patterning process; identifying a set of disfavored locations based on the simulated contours; and performing an image alignment process to align the measured image with a selected contour of the simulated contours using locations other than the set of disfavored locations.

公开(公告)号：WO2018224349A1

公开(公告)日：2018-12-13

申请号：PCT/EP2018/063948

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Te-Sheng ,  ZHAO, Qian

IPC: G03F7/20

Abstract: A method involving obtaining a simulation (710) of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point (740) on the simulated contour (710) of the pattern, the location spatially associated with a location of a corresponding evaluation point (730) on a design layout (700) for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point (740) on the simulated contour (710) and the location of the corresponding evaluation point (730) on the design layout (700), wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point (760) on a measured image (720) of at least part of the pattern, the evaluation point (760) on the measured image (720) spatially associated with the corresponding evaluation point (730) on the design layout (700).

公开(公告)号：WO2018121965A1

公开(公告)日：2018-07-05

申请号：PCT/EP2017/081695

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Te-Sheng

IPC: G03F7/20

Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.

公开(公告)号：WO2016096668A1

公开(公告)日：2016-06-23

申请号：PCT/EP2015/079467

申请日：2015-12-11

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Gang ,  WANG, Te-Sheng

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70558

Abstract: Disclosed herein is a computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method comprising: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.

Abstract translation: 本文公开了一种用于改进光刻工艺的计算机实现的方法，用于使用光刻设备将设计布局的一部分图像成像到衬底上，该方法包括：获得该部分中的一个或多个特征相对于 剂量; 获得特征值; 并根据特征值和关系得到目标剂量。

公开(公告)号：WO2022207236A1

公开(公告)日：2022-10-06

申请号：PCT/EP2022/055553

申请日：2022-03-04

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Te-Sheng ,  WANG, Szu-Po ,  LIU, Tsung-Hsien ,  HSIEH, Yung-Huan

IPC: H01J37/26 ,  G03F7/20

Abstract: Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus- related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.

公开(公告)号：WO2017194285A1

公开(公告)日：2017-11-16

申请号：PCT/EP2017/059371

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： JOCHEMSEN, Marinus ,  MIDDLEBROOKS, Scott, Anderson ,  HUNSCHE, Stefan ,  WANG, Te-Sheng

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70466 ,  G03F7/70616

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining a displacement for each of the structures with respect to a reference point for that structure; and assigning, using a hardware computer system, each of the structures into one of a plurality of groups based on the displacement.

Abstract translation: 一种方法，包括：获得衬底上的多个结构的图像，其中通过转移设计布局的对应图案在所述衬底上形成所述多个结构中的每一个; 获得每个结构相对于该结构的参考点的位移; 并且使用硬件计算机系统将每个结构分配到基于位移的多个组中的一个中。

公开(公告)号：WO2017063827A1

公开(公告)日：2017-04-20

申请号：PCT/EP2016/072364

申请日：2016-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Te-Sheng

IPC: G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/12

Abstract: Disclosed herein is a method, comprising: measuring a value of a directly measureable processing parameter of a patterning process from a portion of a substrate produced by the patterning process; obtaining a relationship between the directly measureable processing parameter and a not directly measureable processing parameter; and determining a value of the not directly measureable processing parameter from the value of the directly measureable processing parameter and the relationship.

Abstract translation: 本文公开了一种方法，该方法包括：从通过图案化工艺产生的衬底的一部分测量图案化工艺的可直接测量的工艺参数的值; 获得可直接测量的处理参数与不可直接测量的处理参数之间的关系; 并根据可直接测量的处理参数的值和该关系确定不可直接测量的处理参数的值。

公开(公告)号：EP4315387A1

公开(公告)日：2024-02-07

申请号：EP22713558.9

申请日：2022-03-04

Applicant: ASML Netherlands B.V.

Inventor： WANG, Te-Sheng ,  WANG, Szu-Po ,  LIU, Tsung-Hsien ,  HSIEH, Yung-Huan

IPC: H01J37/26 ,  G03F7/20