METHOD OF PREDICTING PATTERNING DEFECTS CAUSED BY OVERLAY ERROR
    1.
    发明申请
    METHOD OF PREDICTING PATTERNING DEFECTS CAUSED BY OVERLAY ERROR 审中-公开
    预测由覆盖错误引起的图案缺陷的方法

    公开(公告)号:WO2018015181A1

    公开(公告)日:2018-01-25

    申请号:PCT/EP2017/067074

    申请日:2017-07-07

    Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.

    Abstract translation: 一种方法,包括:确定与设计布局图案的热点相关联的第一颜色图案和第二颜色图案,所述设计布局图案被配置用于转移到衬底;以及通过硬件计算机 系统中,至少部分地基于第一颜色图案和第二颜色图案之间的重叠误差的测量值,在覆盖误差引起的衬底上的热点处是否存在缺陷。

    METHOD AND APPARATUS FOR IMAGE ANALYSIS
    2.
    发明申请
    METHOD AND APPARATUS FOR IMAGE ANALYSIS 审中-公开
    图像分析方法和设备

    公开(公告)号:WO2016091536A1

    公开(公告)日:2016-06-16

    申请号:PCT/EP2015/076582

    申请日:2015-11-13

    Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non- nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

    Abstract translation: 描述了图像的检测,配准和量化的方法和设备。 该方法可以包括获得光刻创建的结构的图像,并且将水平集方法应用于表示图像的结构的对象以创建结构的数学表示。 该方法可以包括:在参数的标称条件下获得表示结构的参考图像对象的第一数据集,以及在参数的非标称条件下获得表示该结构的模板图像对象的第二数据集。 该方法可以进一步包括获得表示第一数据集和第二数据集之间的变化的变形场。 可以通过变换第二数据集以将模板图像对象投影到参考图像对象上来生成变形场。 可以获得变形场与参数变化之间的依赖关系。

    INSPECTION APPARATUS AND METHODS, SUBSTRATES HAVING METROLOGY TARGETS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD
    3.
    发明申请
    INSPECTION APPARATUS AND METHODS, SUBSTRATES HAVING METROLOGY TARGETS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 审中-公开
    检查装置和方法,具有计量学目标的基板,光刻系统和器件制造方法

    公开(公告)号:WO2015062854A1

    公开(公告)日:2015-05-07

    申请号:PCT/EP2014/071910

    申请日:2014-10-13

    Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

    Abstract translation: 公开了一种用于光刻的检查装置。 它包括用于承载多个计量目标的基板的支撑件; 光学系统,用于在预定的照明条件下照射所述目标,并用于在所述照明条件下检测由所述目标衍射的辐射的预定部分; 处理器,被布置成从所述检测到的衍射辐射部分计算特定目标的不对称度; 以及控制器,用于使所述光学系统和处理器测量所述目标中的至少两个中的不对称性,所述对象在所述基底上的层内的结构之间的位置偏移和较小子结构之间具有不同的已知分量,并且根据所述不对称测量的结果 用于所述较小尺寸结构的光刻工艺的性能参数的测量。 还公开了提供有通过光刻工艺形成的多个新颖度量目标的基板。

    PROCESS WINDOW BASED ON DEFECT PROBABILITY
    4.
    发明申请

    公开(公告)号:WO2019121486A1

    公开(公告)日:2019-06-27

    申请号:PCT/EP2018/085159

    申请日:2018-12-17

    Abstract: Described herein is a method. The method includes steps for obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

    METROLOGY DATA CORRECTION USING IMAGE QUALITY METRIC

    公开(公告)号:WO2020035516A1

    公开(公告)日:2020-02-20

    申请号:PCT/EP2019/071774

    申请日:2019-08-14

    Abstract: Described herein is a method for correcting metrology data of a patterning process. The method includes obtaining (P92) (i) metrology data (901) of a substrate subjected to the patterning process and (ii) a quality metric (902, e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing (P94) a correlation between the quality metric and the metrology data; and determining (P96) a correction to the metrology data based on the correlation between the quality metric and the metrology data.

    DISPLACEMENT BASED OVERLAY OR ALIGNMENT
    7.
    发明申请
    DISPLACEMENT BASED OVERLAY OR ALIGNMENT 审中-公开
    基于位移的覆盖或对齐

    公开(公告)号:WO2017194285A1

    公开(公告)日:2017-11-16

    申请号:PCT/EP2017/059371

    申请日:2017-04-20

    CPC classification number: G03F7/70633 G03F7/70466 G03F7/70616

    Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining a displacement for each of the structures with respect to a reference point for that structure; and assigning, using a hardware computer system, each of the structures into one of a plurality of groups based on the displacement.

    Abstract translation: 一种方法,包括:获得衬底上的多个结构的图像,其中通过转移设计布局的对应图案在所述衬底上形成所述多个结构中的每一个; 获得每个结构相对于该结构的参考点的位移; 并且使用硬件计算机系统将每个结构分配到基于位移的多个组中的一个中。

    SELECTION OF MEASUREMENT LOCATIONS FOR PATTERNING PROCESSES
    8.
    发明申请
    SELECTION OF MEASUREMENT LOCATIONS FOR PATTERNING PROCESSES 审中-公开
    用于图案化过程的测量位置的选择

    公开(公告)号:WO2017114662A1

    公开(公告)日:2017-07-06

    申请号:PCT/EP2016/081195

    申请日:2016-12-15

    CPC classification number: G03F7/705 G03F7/70616 H01L22/12

    Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

    Abstract translation: 提供了一种选择测量位置的处理,该处理包括:获得描述在图案化处理中将被施加到衬底的图案的图案数据; 获得在处理基板期间或之后测量的处理特性,所述处理特性表征基板的处理; 基于所述图案数据和所述过程特征来确定所述图案化过程的模拟结果; 并根据模拟结果选择基板的测量位置。

    METHOD AND APPARATUS FOR IMAGE ANALYSIS
    9.
    发明申请
    METHOD AND APPARATUS FOR IMAGE ANALYSIS 审中-公开
    图像分析的方法和装置

    公开(公告)号:WO2016091534A1

    公开(公告)日:2016-06-16

    申请号:PCT/EP2015/076540

    申请日:2015-11-13

    Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non- nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

    Abstract translation: 描述了图像的检测,配准和定量的方法和装置。 该方法可以包括获得光刻创建的结构的图像,以及将水平集合方法应用于表示图像的结构的对象,以创建该结构的数学表示。 该方法可以包括在参数的标称条件下获得代表结构的参考图像对象的第一数据集,以及在参数的非标称条件下获得表示该结构的模板图像对象的第二数据集。 该方法还可以包括获得代表第一数据集和第二数据集之间变化的变形域。 可以通过变换第二数据集来将模板图像对象投影到参考图像对象上来生成变形场。 可以获得变形场与参数变化之间的依赖关系。

    INSPECTION DATA FILTERING SYSTEMS AND METHODS

    公开(公告)号:WO2022263104A1

    公开(公告)日:2022-12-22

    申请号:PCT/EP2022/063752

    申请日:2022-05-20

    Abstract: To monitor semiconductor manufacturing process variation, contours of identical pattern features are determined based on SEM images, and the contours are aggregated and statistically analyzed to determine the variation of the feature. Some of the contours are outliers, and the aggregation and averaging of the contours "hides" these outliers. The present disclosure describes filtering certain outlier contours before they are aggregated and statistically analyzed. The filtering can be performed at multiple levels, such as based on individual points on the contours in the set of inspection contours, or based on overall geometrical shapes of the contours in the set of inspection contours.

Patent Agency Ranking