Abstract:
A method for training a machine learning model includes obtaining a set of unpaired after-development (AD) images and after-etch (AE) images associated with a substrate. Each AD image in the set is obtained at a location on the substrate that is different from the location at which any of the AE images is obtained. The method further includes training the machine learning model to generate a predicted AE image based on the AD images and the AE images, wherein the predicted AE image corresponds to a location from which an input AD image of the AD images is obtained.
Abstract:
Disclosed herein is a method and a computer program product that relates to lithographic apparatuses and processes, and more particularly to a method and computer program to inspect substrates produced by the lithographic apparatuses and processes. The method and/or computer program product comprise: determining, using a computer, contributions from independent sources from results measured from a lithography process or a substrate processed by the lithography process; wherein the results are measured using a plurality of different substrate measurement recipes.
Abstract:
Disclosed herein is a method to determine a metrology contribution from statistically independent sources comprising providing a plurality of contributions from statistically independent sources obtained at a plurality of measurement settings, determining a metrology contribution from the said contributions wherein the metrology contribution is the contribution having least dependence as a function of said measurement settings.
Abstract:
Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method for generating synthetic distorted images, the method comprising: obtaining an input set that comprises a plurality of distorted images; determining, using a model, distortion modes of the distorted images in the input set; generating a plurality of different combinations of the distortion modes; generating, for each one of the plurality of combinations of the distortion modes, a synthetic distorted image in dependence on the combination; and including each of the synthetic distorted images in an output set.
Abstract:
Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
Abstract:
A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate. In an embodiment, the scatterometer includes a measurement system arranged to direct a beam of radiation onto a target pattern on said substrate and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.
Abstract:
Described herein are system, method, and apparatus for determining three-dimensional (3D) information of a structure of a patterned substrate. The 3D information can be determined using one or more model configured to generate 3D information (e.g., depth information) using only a single image of a patterned substrate. In a method, the model is trained by obtaining a pair of stereo images of a structure of a patterned substrate. The model generates, using a first image of the pair of stereo images as input, disparity data between the first image and a second image, the disparity data being indicative of depth information associated with the first image. The disparity data is combined with the second image to generate a reconstructed image corresponding to the first image. Further, one or more model parameters are adjusted based on the disparity data, the reconstructed image, and the first image.
Abstract:
A method for increasing certainty in parameterized model predictions is described. The method comprises clustering dimensional data in a latent space associated with a parameterized model into clusters. Different clusters correspond to different portions of a given input. The method comprises predicting, with the parameterized model, an output based on the dimensional data in the latent space. The method comprises transforming, with the parameterized model, the dimensional data in the latent space into a recovered version of the given input that corresponds to one or more of the clusters. In some embodiments, the method comprises determining which clusters correspond to predicted outputs with higher variance, and making the parameterized model more descriptive by adding to the dimensionality of the latent space, and/or training the parameterized model with more diverse training data associated with one or more of the determined clusters or parts of clusters associated with the higher variance.
Abstract:
Described herein is a method for training a machine learning model configured to predict a substrate image corresponding to a printed pattern of a substrate as measured via a metrology tool. The method involves obtaining a training data set comprising (i) metrology data of the metrology tool used to measure the printed pattern of the substrate, and (ii) a mask pattern employed for imaging the printed pattern on the substrate; and training, based on the training data set, a machine learning model to predict the substrate image of the substrate as measured by the metrology tool such that a cost function is improved, wherein the cost function comprises a relationship between the predicted substrate image and the metrology data.
Abstract:
Described herein is a method for quantifying uncertainty in parameterized (e.g., machine learning) model predictions. The method comprises causing a parameterized model to predict multiple posterior distributions from the parameterized model for a given input. The multiple posterior distributions comprise a distribution of distributions. The method comprises determining a variability of the predicted multiple posterior distributions for the given input by sampling from the distribution of distributions; and using the determined variability in the predicted multiple posterior distributions to quantify uncertainty in the parameterized model predictions. The parameterized model comprises encoder-decoder architecture. The method comprises using the determined variability in the predicted multiple posterior distributions to adjust the parameterized model to decrease the uncertainty of the parameterized model for predicting wafer geometry, overlay, and/or other information as part of a semiconductor manufacturing process.