公开(公告)号：KR20180030191A

公开(公告)日：2018-03-21

申请号：KR20187004699

申请日：2016-08-03

Applicant: ASML NETHERLANDS BV

Inventor： POLYAKOV ALEXEY OLEGOVICH ,  QUINTANILHA RICHARD ,  BANINE VADIM YEVGENYEVICH ,  VERSCHUREN COEN ADRIANUS

IPC: G03F7/20 ,  G21K1/06 ,  H05G2/00

CPC classification number: H05G2/00 ,  G03F7/70625 ,  G03F7/70633 ,  G21K1/06

Abstract: 리소그래피에의해제조되거나리소그래피에서사용되는타겟구조체(T)는역콤프턴산란에의해생성된 EUV 방사선(304)으로적어도제 1 회상기구조체를조사함으로써검사된다. 반사또는투과과정에서타겟구조체에의해산란된방사선(308)이검출되고(312) 타겟구조체의특성이검출된산란된방사선에기초하여프로세서(340)에의해계산된다. 방사선은 0.1 nm 내지 125 nm의 EUV 범위에속하는제 1 파장을가질수 있다. 동일한소스를사용하여전자에너지를조절하면서, 구조체는 EUV 범위에속하는상이한파장, 및/또는더 짧은(x-선) 파장및/또는더 긴(UV, 가시) 파장으로수 회조사될수 있다. 역콤프턴산란소스내에서전자에너지를고속스위칭함으로써, 상이한파장에서의조사가초당수 회수행될수 있다.

Abstract translation: 通过光刻产生的或用于光刻的目标结构（T）通过用局部康普顿散射产生的EUV辐射（304）照射至少第一移相器结构来检查。 在反射或透射期间由目标结构散射的辐射308被检测312，并且处理器340基于检测到的散射辐射来计算目标结构的特性。 辐射可具有落入0.1nm至125nm的EUV范围内的第一波长。 通过控制具有相同源的电子能量，该结构可以以不同的波长进行调查几次，和/或较短的（x射线）的波长和/或更长的（UV，可见光）的波长属于EUV范围内。 通过快速切换背对背散射源内的电子能量，可以每秒多次执行不同波长的辐照。

公开(公告)号：JP2011258990A

公开(公告)日：2011-12-22

申请号：JP2011204659

申请日：2011-09-20

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： VLADIMIR VITALEVICH IVANOV ,  BANINE VADIM YEVGENYEVICH ,  KOSHELEV KONSTANTIN

IPC: H01L21/027 ,  H05G2/00

CPC classification number: H05G2/001 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916

Abstract: PROBLEM TO BE SOLVED: To reduce fast ions in a plasma radiation source.SOLUTION: The radiation source includes a first activation source to direct a first energy pulse onto a first spot in the radiation source near discharge space to create a main plasma channel which triggers discharge. The radiation source also has a second activation source to direct a second energy pulse onto a second spot in the radiation source near the discharge space to create an additional plasma channel. By directing the second energy pulse during the same discharge, a shortcut of a main plasma current is realized, which can reduce an amount of fast ions to be produced.

Abstract translation: 要解决的问题：减少等离子体辐射源中的快速离子。 解决方案：辐射源包括第一激活源，以将第一能量脉冲引导到放电空间附近的辐射源中的第一点上，以产生触发放电的主等离子体通道。 辐射源还具有第二激活源，以将第二能量脉冲引导到放电空间附近的辐射源中的第二点上，以产生附加的等离子体通道。 通过在相同放电期间引导第二能量脉冲，实现了主等离子体电流的捷径，这可以减少要产生的快离子的量。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011228742A

公开(公告)日：2011-11-10

申请号：JP2011162445

申请日：2011-07-25

Applicant: Asml Netherlands Bv ,  Koninklijke Philips Electronics Nv ,  エーエスエムエル ネザーランズ ビー.ブイ. ,  コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ

Inventor： WILHELMUS VAN HERPEN MAARTEN MARINUS JOHANNES ,  BANINE VADIM YEVGENYEVICH ,  JOHANNES CHRISTIAAN LEONARDUS FRANKEN ,  OLAV WALDEMAR VLADIMIR FRIJNS ,  DERK JAN WILFRED KLUNDER ,  NIELS MACHIEL DRIESSEN ,  SOER WOUTER ANTHON

IPC: H01L21/027 ,  G21K1/06 ,  H05G2/00

CPC classification number: G03F7/70916 ,  G01N21/15 ,  G03F7/70558

Abstract: PROBLEM TO BE SOLVED: To provide an optical sensor device capable of monitoring the extent of contamination accumulated in an EUV system.SOLUTION: An optical sensor device for use in an extreme ultraviolet ray lithography system comprises an optical sensor including a sensor surface and a removing mechanism for removing debris from the sensor surface. Therefore, measurement of the dose and/or contamination can be accomplished favorably for the lithography system.

Abstract translation: 要解决的问题：提供能够监测在EUV系统中累积的污染程度的光学传感器装置。 解决方案：用于极紫外线光刻系统的光学传感器装置包括光学传感器，其包括传感器表面和用于从传感器表面去除碎屑的去除机构。 因此，对于光刻系统，可以有利地实现剂量和/或污染物的测量。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010258470A

公开(公告)日：2010-11-11

申请号：JP2010151194

申请日：2010-07-01

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DE SMIT JOANNES THEODOOR ,  BANINE VADIM YEVGENYEVICH ,  BISSCHOPS THEODORUS HUBERTUS J ,  MODDERMAN THEODORUS MARINUS ,  DIERICHS MARCLE MATHIJS T M

IPC: H01L21/027 ,  B01D19/00 ,  G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/708 ,  G03F7/70858

Abstract: PROBLEM TO BE SOLVED: To improve the lithography performance of an apparatus having a liquid that fills the space between a final element of a projection system and a substrate. SOLUTION: A lithographic apparatus and a device manufacturing method make use of a high-refractive index liquid, confined in a reservoir 13, at least partly filling a lithography field between a final element of a projection lens and the substrate. Bubbles forming in the liquid resulting from dissolved atmospheric gases or the gas discharge from an apparatus element exposed to the liquid are detected and removed so that they do not interfere with the exposure, to cause burning defects on the substrate. The detection can be carried out, by measuring the frequency dependence of ultrasonic attenuation in the liquid and the removal of bubbles can be implemented by: degassing and pressurizing the liquid; isolating the liquid from the atmosphere; supplying a continuous flow of liquid through the lithography field using liquids of low surface tension; and further, phase-shifting the ultrasonic standing-wave nodes. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提高具有填充投影系统的最终元件和基板之间的空间的液体的装置的光刻性能。 解决方案：光刻设备和器件制造方法利用限制在储存器13中的高折射率液体，至少部分地填充投影透镜的最终元件与基底之间的光刻场。 检测并除去由溶解的大气气体引起的液体中形成的气泡或暴露于液体的装置元件的气体排出，使得它们不干扰曝光，引起基板上的燃烧缺陷。 可以通过测量液体中超声波衰减的频率依赖性进行检测，并且可以通过以下方式实现气泡的去除：对液体进行脱气和加压; 从大气隔离液体; 使用低表面张力的液体通过光刻领域提供连续的液体流; 并且进一步移相超声波驻波节点。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010045400A

公开(公告)日：2010-02-25

申请号：JP2009264762

申请日：2009-11-20

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BAKKER LEVINUS P ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVITCH ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  SCHUURMANS FRANK JEROEN PIETER ,  ZUKAVISHVILI GIVI GEORGIEVITCH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  VAN DER VELDEN MARC H L

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70933 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus which reduces sputtering due to gas that has been introduced in an optical path of a projection beam, and to provide a device manufacturing method. SOLUTION: The lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The lithographic apparatus includes an optical element in an optical path of the beam, a gas inlet for introducing gas into the optical path of the beam so that the gas will be ionized by the beam to create an electric field toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold value of kinetic energy for sputtering the optical element that is greater than a kinetic energy developed by ions of the gas in the electric field. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光刻设备，其减少由于在投影光束的光路中引入的气体引起的溅射，并提供器件制造方法。 解决方案：光刻设备被布置成将来自辐射源的光束投射到基板上。 光刻设备包括光束的光路中的光学元件，用于将气体引入光束的光路中的气体入口，使得气体将被光束离子化以产生朝向光学元件的电场，并且 气体源耦合到用于供应气体的气体入口。 气体具有用于溅射光学元件的动能的阈值，其大于由电场中的气体的离子产生的动能。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010045358A

公开(公告)日：2010-02-25

申请号：JP2009183973

申请日：2009-08-07

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： SCHIMMEL HENDRIKUS GIJSBERTUS ,  BANINE VADIM YEVGENYEVICH ,  LOOPSTRA ERIK ROELOF ,  BOSSCHART CAREL HOPE

IPC: H01L21/027

CPC classification number: H05G2/003 ,  G03F7/70033 ,  G03F7/70891 ,  G03F7/70916 ,  G21K1/06 ,  H05G2/005 ,  H05G2/008

Abstract: PROBLEM TO BE SOLVED: To control fuel droplets by a method reducing potential contamination on other surfaces in a radiation source and other parts of a lithographic apparatus.
SOLUTION: The radiation source is configured to generate extreme ultraviolet rays. The radiation source comprises a laser which is configured to generate a radiation beam to be guided to a plasma generation part for plasma generation when the radiation beam interacts with fuel, an optical component comprising a surface which is configured and positioned to be hit with droplets of the fuel, and a temperature conditioner configured to raise the temperature of the surface. A coating may be so provided on the surface as to change at least one nature of the surface. The energy source may be configured so that the droplets of fuel solidify before they hit the surface or to prevent the droplets of fuel from vaporizing.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过减少辐射源和光刻设备的其它部分中的其它表面上的潜在污染的方法来控制燃料液滴。 解决方案：辐射源被配置为产生极紫外线。 辐射源包括激光器，其被配置为当辐射束与燃料相互作用时，产生要被引导到等离子体产生部件的等离子体产生部件的辐射束;光学部件，其包括被配置并定位成被喷射的液滴 所述燃料和配置为升高所述表面的温度的温度调节器。 可以在表面上设置涂层以改变表面的至少一种性质。 能量源可以被配置为使得燃料液滴在它们撞击表面之前固化或者防止燃料液滴蒸发。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010045355A

公开(公告)日：2010-02-25

申请号：JP2009182957

申请日：2009-08-06

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： WILHELMUS VAN HERPEN MAARTEN MARINUS JOHANNES ,  BANINE VADIM YEVGENYEVICH ,  KLUNDER DERK JAN WILFRED ,  SOER WOUTER ANTHON

IPC: H01L21/027

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70925 ,  G21K2201/064 ,  H05G2/005

Abstract: PROBLEM TO BE SOLVED: To prevent damage to a component of a lithography apparatus, in particular, a mirror located nearby a plasma source due to contaminant particles. SOLUTION: The lithography apparatus includes a radiation source which generates extreme ultraviolet radiation. The radiation source includes a chamber in which plasma is generated and the mirror which reflects radiation emitted by the plasma. The mirror includes a multilayer structure including an Mo/Si alternation layer. A border Mo layer or border Si layer or a border diffusion barrier layer of the alternation layer forms an uppermost layer of the mirror, and the uppermost layer faces the chamber inward. A hydrogen group generator generates hydrogen in the chamber. The hydrogen group removes debris, generated from the plasma, from the mirror. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止光刻设备的部件，特别是由于污染物颗粒而位于等离子体源附近的反射镜的损坏。 解决方案：光刻设备包括产生极紫外辐射的辐射源。 辐射源包括其中产生等离子体的室和反射由等离子​​体发射的辐射的反射镜。 反射镜包括包括Mo / Si交替层的多层结构。 边界Mo层或边界Si层或交替层的边界扩散阻挡层形成反射镜的最上层，最上层向内面向腔室。 氢气发生器在腔室中产生氢气。 氢离子从镜子中除去从等离子体产生的碎片。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006222426A

公开(公告)日：2006-08-24

申请号：JP2006028417

申请日：2006-02-06

Applicant: ASML NETHERLANDS BV

Inventor： BAKKER LEVINUS P ,  BANINE VADIM YEVGENYEVICH ,  LEONARDUS FRANKEN JOHANNES CHR ,  JOSEPHINA MOORS JOHANNES HUBER ,  SPEE CAROLUS IDA MARIA ANTONIU ,  WASSINK ARNOUD C ,  ANTONIUS BROM PAUL P A

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a method for removal of deposition on an optical element of a lithographic apparatus, and the lithographic apparatus. SOLUTION: The method for removal of deposition on a radiation collector of a lithographic apparatus includes a process of providing a gas barrier to the end of the radiation collector, thereby providing a radiation collector enclosure volume; a process of providing a gas to the enclosure volume, the gas selected from a halogen containing gas and a hydrogen, deuterium and/or tritium containing gas; and a process of removing at least part of the deposition from the radiation collector. The lithographic apparatus includes the radiation collector; a circumferential hull enclosing the radiation collector; and the gas barrier at the end of the radiation collector, thereby providing the radiation collector enclosure volume. The radiation collector is enclosed by the circumferential hull and the gas barrier. An inlet feeds a gas to the radiation collector enclosure volume and an outlet exhausts a gas from the radiation collector enclosure volume. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2005150721A

公开(公告)日：2005-06-09

申请号：JP2004325789

申请日：2004-11-10

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： BAKKER LEVINUS PIETER ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR V ,  KOSHELEV KONSTANTIN N ,  KRIVTSUN VLADIMIR M

IPC: G03F7/20 ,  H01L21/027

CPC classification number: B82Y10/00 ,  G03F7/70166 ,  G03F7/70908 ,  G03F7/70916

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic projector provided with a radiation system which emits a radiant projected beam. SOLUTION: The lithographic projector is provided with a particle supply unit 22 which supplies getter particles into a radiant projected beam for performing the role of a getter for contaminated particles in the projected beam. The getter particles have diameters of ≥1 nm, preferably, COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种设置有发射辐射投影光束的辐射系统的光刻投影仪。 解决方案：光刻投影仪设置有颗粒供应单元22，其将吸气剂颗粒提供到辐射投影光束中，用于执行投影光束中污染颗粒的吸气剂的作用。 吸气剂颗粒的直径为≥1nm，优选<1,000nm。 在一个实施例中，该光刻投影仪具有伴随有板构件52,57,59和69的污染物捕集器9,50,55和67，用于捕获投影光束中的污染颗粒; 颗粒供给单元22,45,54,58,65和71，其将污染物捕集器9,50,55和67的颗粒供应到上游侧的空间，使得颗粒可能与污染的颗粒碰撞并给出 附加的速度分量到被污染的颗粒朝向板状构件52,57,59和69.版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004343082A

公开(公告)日：2004-12-02

申请号：JP2004105027

申请日：2004-03-31

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： BANINE VADIM YEVGENYEVICH

IPC: G02B17/06 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70175

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic projection apparatus in which an ML condenser has been substituted by a condenser that can form a radiation beam by collecting a radiated light within a solid angle which is equivalent to the solid angle within which the ML condenser collects the radiated light.
SOLUTION: The lithographic apparatus to be disclosed includes a radiation source that emits the radiated light and at least one condenser (59; 63; 73) that collects the radiated light by being arranged close to the radiation source (51) and forms a radiated beam (52). The at least one condenser includes a first reflector on a concave-face mirror (53) and a second reflector on a convex-face mirror (55). The concave-face mirror (53) is arranged surrounding the convex-face mirror (55). The first reflector on the concave-face mirror (53) receives the radiated light from the radiation source (51). The first reflector reflects the received radiated light toward the second reflector on the convex-face mirror (55) to form a beam of the radiated light (52).
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种光刻投影装置，其中ML冷凝器已经被可以形成辐射束的聚光器取代，该聚光器通过以等于立体角的立体角收集辐射光， ML冷凝器收集辐射光。 解决方案：待公开的光刻设备包括发射辐射光的辐射源和通过靠近辐射源（51）布置而收集辐射光的至少一个冷凝器（59; 63; 73），并形成 辐射束（52）。 所述至少一个聚光器包括凹面镜（53）上的第一反射器和凸面镜（55）上的第二反射器。 凹面镜53围绕凸面镜55配置。 凹面反射镜（53）上的第一反射器接收来自辐射源（51）的辐射光。 第一反射器将接收到的辐射光反射到凸面反射镜（55）上的第二反射器，以形成辐射光束（52）。 版权所有（C）2005，JPO＆NCIPI