Abstract:
PROBLEM TO BE SOLVED: To provide a lithography apparatus which can reduce or prevent sputtering on optical component relevant to plasma. SOLUTION: This lithography apparatus is a radiation source constituted so that the radiation for forming a radiation beam is emitted, wherein the radiation includes the radiation source which is a type of generating the plasma in a low-pressure environment in the lithography apparatus, and optical components constituted so that a pattern is given to a cross section of the radiation beam adjusted in order to form a radiation beam with the pattern, the radiation beam with the pattern is projected on a target portion of the substrate, and/or the radiation is detected. A plasma annihilation structure is provided in the optical components, and the plasma annihilation structure is constituted so as to cause the electron-ion recombination inside, above, and/or near the optical components. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus for reducing sputtering caused by gas introduced to a projection beam optical path, and a method for manufacturing the apparatus. SOLUTION: The lithographic apparatus is arranged to project a beam from a radiation source to a substrate. The lithographic apparatus includes an optical element in an optical path of the beam, a gas inlet for introducing gas into the optical path of the beam so that the gas is ionized by the beam to a create electric field toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy that is greater than kinetic energy developed by ions of the gas in the electric fields for sputtering the optical element. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus which reduces sputtering due to gas that has been introduced in an optical path of a projection beam, and to provide a device manufacturing method. SOLUTION: The lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The lithographic apparatus includes an optical element in an optical path of the beam, a gas inlet for introducing gas into the optical path of the beam so that the gas will be ionized by the beam to create an electric field toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold value of kinetic energy for sputtering the optical element that is greater than a kinetic energy developed by ions of the gas in the electric field. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for removal of deposition on an optical element of a lithographic apparatus, and the lithographic apparatus. SOLUTION: The method for removal of deposition on a radiation collector of a lithographic apparatus includes a process of providing a gas barrier to the end of the radiation collector, thereby providing a radiation collector enclosure volume; a process of providing a gas to the enclosure volume, the gas selected from a halogen containing gas and a hydrogen, deuterium and/or tritium containing gas; and a process of removing at least part of the deposition from the radiation collector. The lithographic apparatus includes the radiation collector; a circumferential hull enclosing the radiation collector; and the gas barrier at the end of the radiation collector, thereby providing the radiation collector enclosure volume. The radiation collector is enclosed by the circumferential hull and the gas barrier. An inlet feeds a gas to the radiation collector enclosure volume and an outlet exhausts a gas from the radiation collector enclosure volume. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus that has an illumination system including a contaminant trapping system with improved efficiency as compared with conventional contaminant trapping systems. SOLUTION: The lithographic apparatus includes an illumination system for adjusting a radiation beam emitted substantially from a light emitting point LEP. The illumination system includes the contaminant trapping system CTS. The trapping system includes a contaminant trap CT having a central zone CZ and a peripheral zone PZ. The trap includes a plurality of platelets Pt that extend substantially outward through the peripheral zone. The light emitting point LEP exists on a plane where the platelets Pt overlap therewith. Each of the platelets Pt has a normal with respect to a component directed towards the central zone. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To lessen an amount of debris coming into an illuminating system and prolong the life of a collector in a radiation system. SOLUTION: The radiation system of the lithography device is provided with at least either of a pollutant trap that traps substances discharged from a radiation source and a collector that condenses radiated beams. At least either of the pollutant trap and the collector is provided with elements disposed in the path of radiation beams, the substances discharged from the radiation source can be attached to the elements while the radiation beams propagate in the radiation system. At least a part of the elements disposed in the path of the radiation beams has a surface of big mirror grazing incidence reflectance for lessening the absorption of the radiation beams that propagate substantially in non-parallel directions to the surfaces of the elements and reducing thermal load which the elements encounter. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an improved system and method for monitoring contamination in which the occurrence of the contamination is quickly detected using a comparatively easy and inexpensive monitoring device. SOLUTION: The system which detects at least one contamination species in the internal space of a lithography device includes at least one monitoring surface constituted as an internal space contact is carried out, a thermal controller configured so that the temperature on the monitoring surface may be controlled to at least one detection temperature, and at least one detector constituted so that the condensation of up to at least one monitoring surface of the contamination species might be detected. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
The invention is relates to a mirror, having a mirroring surface, wherein the mirroring surface comprises one or more protrusions comprising a material selected from at least one of Be, B, C, P, S, K, Ca, Sc, Br, Rb, Sr, Y, Zr, Nb, Mo, Ba, La, Ce, Pr, Pa and U, or wherein the mirroring surface comprises one or more first protrusions comprising a first material selected from at least one of Be, B, C, P, S, K, Ca, Sc, Br, Rb, Sr, Y, Zr, Nb, Mo, Ba, La, Ce, Pr, Pa and U, and one or more second protrusions comprising a second material selected from at least one of Be, B, C, Si, P, S, K, Ca, Sc, Br, Rb, Sr, Y, Zr, Nb, Mo, Ba, La, Ce, Pr, Pa and U, and wherein the first and second materials are not the same. The inventions is further related to a lithographic projection apparatus comprising such mirrors. The invention also relates to a device manufacturing method using such lithographic apparatus.