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    Lithographic device comprising electrical discharge generator and method for cleaning element of lithographic device
    3.
    发明专利
    Lithographic device comprising electrical discharge generator and method for cleaning element of lithographic device 有权
    包含电力放电发生器的电路设备和用于清洁光刻设备元件的方法

    公开(公告)号：JP2007096297A

    公开(公告)日：2007-04-12

    申请号：JP2006249166

    申请日：2006-09-14

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： RAKHIMOVA TATYANA V ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN N ,  MOORS JOHANNES HUBERTUS JOSEPH ,  KOVALEV ALEKSANDER S ,  LOPAEV DMITRIY VICTOROVICH

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70925 ,  G03F7/70933 ,  G21K2201/06

    Abstract: PROBLEM TO BE SOLVED: To provide a method for cleaning elements of a lithographic device, especially a method for cleaning one or more optical elements of the lithographic device. SOLUTION: This method for cleaning elements of the lithographic device, for example, optical elements such as a collector mirror, includes a step for supplying gas containing nitrogen, a step for forming a radical-containing gas by generating nitrogen radicals from at least a part of the gas containing nitrogen, and a step for supplying at least a part of the radical-containing gas to one or more elements of the lithographic device. The lithographic device comprises a source, an optical element and an electrical discharge generator arranged to generate a radio frequency discharge. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于清洁光刻设备的元件的方法，特别是用于清洁光刻设备的一个或多个光学元件的方法。 解决方案：用于清洁光刻设备的元件的方法，例如诸如集光镜的光学元件，包括供应含氮气体的步骤，通过从中产生氮自由基来形成含自由基的气体的步骤 含有氮气的至少一部分气体，以及用于将至少一部分含自由基的气体供应到光刻设备的一个或多个元件的步骤。 光刻设备包括源，光学元件和布置成产生射频放电的放电发生器。 版权所有（C）2007，JPO＆INPIT

    Radical cleaning configuration for lithography apparatus
    5.
    发明专利
    Radical cleaning configuration for lithography apparatus 审中-公开
    抛光装置的自动清洁配置

    公开(公告)号：JP2007165874A

    公开(公告)日：2007-06-28

    申请号：JP2006325787

    申请日：2006-12-01

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VADIM YEVGENYEVICH BANIE ,  IVANOV VLADIMIR VITALEVITCH ,  JOSEPHINA MOORS JOHANNES HUBER ,  WOLSCHRIJN BASTIAAN THEODOOR ,  KLUNDER DERK JAN WILFRED ,  WILHELMUS VAN HERPEN MAARTEN M

    IPC: H01L21/027 ,  G02B5/08 ,  G03F7/20

    CPC classification number: G03F7/70933 ,  G03F7/70925

    Abstract: PROBLEM TO BE SOLVED: To provide an EUV lithography apparatus, a cleaning configuration for efficiently removing contaminant for the apparatus, and a cleaning configuration for recovering reflectivity of an EUV optical component. SOLUTION: A collector CO is disposed, for example, in a cleaning cocoon so as for the collector CO to be disposed between two particular volumes or enclosures 12 and 14. Radicals such as H radicals are generated in one or both of the volumes 12 and 14, and a pressure region in a range of 1 to 10 Pa is used to produce a flux such that the radicals are moved in the collector CO. The H radicals are moved from the volume 12 to the volume 14, thereby they collide with a wall of the collector CO, so that they can clean a Sn contaminant or the like on the wall of the collector CO. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供EUV光刻设备，用于有效去除设备污染物的清洁配置以及用于恢复EUV光学部件的反射率的清洁配置。 解决方案：收集器CO例如设置在清洁茧中，以便收集器CO被设置在两个特定体积或外壳12和14之间。诸如H自由基的基团在一个或两个 体积12和14以及1至10Pa范围内的压力区域用于产生通量，使得自由基在收集器CO中移动.H自由基从体积12移动到体积14，从而它们 与收集器CO的壁碰撞，以便它们可以清洁收集器CO的壁上的Sn污染物等。（C）2007，JPO＆INPIT

    Methods of controlling euv exposure dose, euv lithographic methods and apparatus using such methods
    7.
    发明专利
    Methods of controlling euv exposure dose, euv lithographic methods and apparatus using such methods 审中-公开
    控制EUV曝光剂量的方法，使用这种方法的EUV光刻方法和装置

    公开(公告)号：JP2013074292A

    公开(公告)日：2013-04-22

    申请号：JP2012206219

    申请日：2012-09-19

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VAN SCHOOT JAN BERNARD PLECHELMUS ,  VAN GREEVENBROEK HENDRIKUS ROBERTUS MARIE ,  IVANOV VLADIMIR VITALEVITCH ,  YAKUNIN ANDREY MIKHAILOVICH ,  HERMANUS JOHANNES MARIA KREUWEL

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70558 ,  G03F7/70033 ,  G03F7/70041

    Abstract: PROBLEM TO BE SOLVED: To provide new dose control methods in order to optimize the number of dies that can be exposed per unit of time.SOLUTION: The EUV exposure dose in a lithographic apparatus is controlled pulse by pulse by varying the conversion efficiency with which a pulse of EUV radiation is generated from excitation of a fuel material by a corresponding pulse of excitation laser radiation. The conversion efficiency can be varied in several different ways, by varying the proportion of a fuel material that interacts with a laser beam, and/or by varying quality of the interaction. Mechanisms of varying the conversion efficiency can be based on variation of laser pulse timing, variation of pre-pulse energy, and/or variable displacement of a main laser beam in one or more directions. Steps of maintaining symmetry of the generated EUV radiation can be included.

    Abstract translation: 要解决的问题：提供新的剂量控制方法，以优化每单位时间可暴露的管芯的数量。 解决方案：光刻设备中的EUV曝光剂量通过改变通过激发激光辐射的相应脉冲从燃料材料的激发产生EUV辐射的脉冲的转换效率脉冲地被脉冲控制。 转换效率可以通过改变与激光束相互作用的燃料材料的比例和/或通过改变相互作用的质量而以几种不同的方式变化。 改变转换效率的机制可以基于激光脉冲定时的变化，预脉冲能量的变化和/或主激光束在一个或多个方向上的可变位移。 可以包括维持所产生的EUV辐射的对称性的步骤。 版权所有（C）2013，JPO＆INPIT

    Lithography apparatus and device manufacturing method
    8.
    发明专利
    Lithography apparatus and device manufacturing method 审中-公开
    LITHOGRAPHY设备和设备制造方法

    公开(公告)号：JP2011129908A

    公开(公告)日：2011-06-30

    申请号：JP2010274157

    申请日：2010-12-09

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SCACCABAROZZI LUIGI ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  YAKUNIN ANDREY MIKHAILOVICH

    IPC: H01L21/027 ,  G03F1/08

    CPC classification number: G03F1/84 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

    Abstract: PROBLEM TO BE SOLVED: To provide a high-speed method of detecting a particle on an arbitrary pattern.
    SOLUTION: A thermal radiation from a mask MA is detected using a system and a method. A debris particle D on the mask MA is heated, but not cooled rapidly like a peripheral mask. Radiations emitted from the particle D and mask MA are different in wavelength because of the resulting temperature difference. Therefore, the thermal radiation is detected to detect presence of the particle D deposited on the mask. When the particle D is detected, the mask MA can be cleaned.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供在任意图案上检测颗粒的高速方法。 解决方案：使用系统和方法检测来自掩模MA的热辐射。 掩模MA上的碎屑颗粒D被加热，但不像外围掩模那样快速冷却。 由于产生的温度差，从粒子D和掩模MA发射的辐射的波长是不同的。 因此，检测热辐射以检测沉积在掩模上的颗粒D的存在。 当检测到颗粒D时，可以清洁掩模MA。 版权所有（C）2011，JPO＆INPIT

    Radiation source
    9.
    发明专利
    Radiation source 有权
    辐射源

    公开(公告)号：JP2007201438A

    公开(公告)日：2007-08-09

    申请号：JP2006345106

    申请日：2006-12-22

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： JOSEPHINA MOORS JOHANNES H ,  BANINE VADIM YEVGENYEVICH ,  FRANKEN JOHANNES CHRISTIAAN LE ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVIT ,  STRUYCKEN ALEXANDER MATTHIJS

    IPC: H01L21/027 ,  G01N23/02 ,  G03F7/20 ,  G21K1/00 ,  G21K5/02 ,  H01J61/20

    CPC classification number: H05G2/003 ,  G03F7/70033 ,  H05G2/005

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation source capable of short wavelength emission like extreme ultraviolet emission for use by lithography. SOLUTION: This radiation source has rotating electrodes 14, 16 to be immersed in respective tanks 18, 20 for liquid metal like tin. Discharge is caused between the electrodes 14 and 16, resulting in emission. To ensure that pumping is improved to result in low voltage generation in the proximity of discharge for source conversion efficiency improvement, holes are created on a shielding metal plate on the electrodes 14, 16 and/or on the periphery of the electrodes 14, 16. These holes for the electrodes 14, 16 effectively cool the electrodes 14, 16 through liquid metal agitation and electric contact improvement between the electrodes 14, 16 and the liquid metal. This electric contact improvement also lowers the time constant of a discharge circuit, so that the source conversion efficiency is further improved. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供能够进行短波长发射的辐射源，如通过光刻使用的极紫外发射。

    解决方案：该辐射源具有旋转电极14,16，以将其浸入相应的罐18,20中，用于液体金属如锡。 在电极14和16之间产生放电，导致发射。 为了确保泵送被改善以导致在放电附近的低电压产生以改善源转换效率，在电极14,16上的屏蔽金属板上和/或电极14,16的外围产生孔。 用于电极14,16的这些孔通过液体金属搅拌和电极14,16与液态金属之间的电接触改善来有效地冷却电极14,16。 这种电接触改善也降低了放电电路的时间常数，从而进一步提高了源极转换效率。 版权所有（C）2007，JPO＆INPIT

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