公开(公告)号：JP2003234287A

公开(公告)日：2003-08-22

申请号：JP2002369012

申请日：2002-11-15

Applicant: ASML NETHERLANDS BV

Inventor： VAN SCHAIK WILLEM ,  MERTENS BASTIAAN MATTHIAS ,  MEILING HANS ,  KOSTER NORBERTUS BENEDICTUS

IPC: G02B17/00 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an efficient and effective cleaning method of an optical element used in a lithographic projection apparatus without employing any unstable material. SOLUTION: Purge gas containing a small amount of molecular oxygen is supplied from a gas supplying source 4 into a space 2 receiving the optical element 3 used in a lithographic projection apparatus. The optical element is irradiated with a UV radiation beam from a radiation source LA for mask pattern projection or a radiation source 7 exclusive for purge whereby the beam of radiation decomposes oxygen and produces an oxygen radical which cleans the optical element very effectively. When the partial pressure of the molecular oxygen contained in the purge gas is from 1×10 -4 Pa to 1 Pa, sufficient cleaning can be effected within a short time. According to this method, an unstable material such as ozone or the like is not used whereby an excessive work such as the preparation of the purge gas is not required and the optical element can be cleaned simultaneously with the exposure of the substrate, thereby not requesting the optical element removed from the lithographic apparatus. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2010045400A

公开(公告)日：2010-02-25

申请号：JP2009264762

申请日：2009-11-20

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BAKKER LEVINUS P ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVITCH ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  SCHUURMANS FRANK JEROEN PIETER ,  ZUKAVISHVILI GIVI GEORGIEVITCH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  VAN DER VELDEN MARC H L

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70933 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus which reduces sputtering due to gas that has been introduced in an optical path of a projection beam, and to provide a device manufacturing method. SOLUTION: The lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The lithographic apparatus includes an optical element in an optical path of the beam, a gas inlet for introducing gas into the optical path of the beam so that the gas will be ionized by the beam to create an electric field toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold value of kinetic energy for sputtering the optical element that is greater than a kinetic energy developed by ions of the gas in the electric field. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光刻设备，其减少由于在投影光束的光路中引入的气体引起的溅射，并提供器件制造方法。 解决方案：光刻设备被布置成将来自辐射源的光束投射到基板上。 光刻设备包括光束的光路中的光学元件，用于将气体引入光束的光路中的气体入口，使得气体将被光束离子化以产生朝向光学元件的电场，并且 气体源耦合到用于供应气体的气体入口。 气体具有用于溅射光学元件的动能的阈值，其大于由电场中的气体的离子产生的动能。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2004207740A

公开(公告)日：2004-07-22

申请号：JP2003425353

申请日：2003-12-22

Applicant: Asml Netherlands Bv ,  Cark Zeiss Smt Ag ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ ,  カール ツァイス エスエムテー アーゲー

Inventor： BAKKER LEVINUS PETER ,  KURT RALPH ,  MERTENS BASTIAAN MATTHIAS ,  WEISS MARKUS ,  TRENKLER JOHANN ,  SINGER WOLFGANG

IPC: G03F7/30 ,  B08B6/00 ,  B08B7/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70916 ,  B08B6/00 ,  B08B7/0035 ,  G03F7/70925

Abstract: PROBLEM TO BE SOLVED: To provide a system and method for cleaning the surface of a component of a lithography projector, a lithography projector, and a method for manufacturing a device. SOLUTION: The cleaning system (100) for removing contaminant (105) at least from a part of the surface (104) of the component (101) in the lithography projector (1) comprises a cleaning particle supplier for supplying cleaning particles in the vicinity of the surface, and the cleaning particle supplier has an electric field generator (106, V) for generating an electric field (107). Moreover, by this method the contaminant (105) is removed at least from a part of the surface (104) of the component (101) of the lithography projector (1). The method comprises steps of: generating an electric field at least at a part of the lithography projector; supplying the cleaning particles in the vicinity of the contaminant by using the electric field (107); and removing the contaminant by the interaction between the cleaning particles and the contaminant. Thus, the contaminant (105) is removed from the surface (104). COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2006279051A

公开(公告)日：2006-10-12

申请号：JP2006088069

申请日：2006-03-28

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： JACOBS JOHANNES HENRICUS WILHE ,  BANINE VADIM YEVGENYEVICH ,  BREWSTER BARRIE DUDLEY ,  IVANOV VLADIMIR VITALEVITCH ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  LIVESEY ROBERT GORDON ,  WOLSCHRIJN BASTIAAN THEODOOR

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70933 ,  G03F7/70908

Abstract: PROBLEM TO BE SOLVED: To provide a lithography apparatus that can be used in a vacuum or semi-vacuum environment. SOLUTION: A lithography projection apparatus has a radiation system for supplying projection beams of radiation, a mask table provided with a mask holder for holding a mask, a substrate table provided with a substrate holder for holding a substrate, and a projection system for imaging a mask's radiated part onto a target portion of the substrate, wherein at least one gas purge ceiling opening is provided that operates between different zones of the apparatus, and one or more gases are supplied from the opening, the gases out of groups composed of hydrogen, heavy hydrogen, and a mixture of argon and hydrogen. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供可以在真空或半真空环境中使用的光刻设备。 解决方案：光刻投影设备具有用于提供投影射束的辐射系统，设置有用于保持掩模的掩模保持器的掩模台，设置有用于保持基板的基板保持器的基板台，以及投影系统 用于将掩模的辐射部分成像到基板的目标部分上，其中提供在设备的不同区域之间操作的至少一个气体吹扫天花板开口，并且一个或多个气体从开口供应，所述气体组成 的氢，重氢，以及氩和氢的混合物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004282046A

公开(公告)日：2004-10-07

申请号：JP2004045957

申请日：2004-02-23

Applicant: Asml Netherlands Bv ,  Cark Zeiss Smt Ag ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ ,  カール ツァイス エスエムテー アーゲー

Inventor： KURT RALPH ,  VAN BEEK MICHAEL CORNELIS ,  DUISTERWINKEL ANTONIE ELLERT ,  KIEFT ERIK RENE ,  MEILING HANS ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  STEVENS LUCAS HENRICUS JOHANNE ,  WOLSCHRIJN BASTIAAN THEODOOR

IPC: G01N21/94 ,  G01N21/27 ,  G01N21/33 ,  G01N21/35 ,  G01N21/956 ,  G03F7/20 ,  G21K5/00 ,  G21K5/02 ,  H01L21/027

CPC classification number: G03F7/70916 ,  G01N21/95684

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring the contamination on the surfaces of the constituent components of a lithographic projection apparatus. SOLUTION: The measuring apparatus includes a radiation transmitter for projecting radiation onto at least a part of the surface of each component of a lithographic projection apparatus and a radiation receiver which receives radiation from each constituent component. A processor, which is connected to the radiation receiver through communication, obtains the characteristics of the received radiation, and then determines the characteristics of the contamination on the basis of the radiation characteristics. The measuring apparatus comprises the steps of: projecting the radiation to the surface of each component, receiving the radiation from each component, and determining the characteristics of the contamination on the basis of the received radiation. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2007180551A

公开(公告)日：2007-07-12

申请号：JP2006344963

申请日：2006-12-21

Applicant: Asml Netherlands Bv ,  Carl Zeiss Smt Ag ,  エーエスエムエル ネザーランズ ビー.ブイ. ,  カール・ツァイス・エスエムティー・アーゲー

Inventor： LORENZ VAN DER VELDEN MARC HUB ,  BANINE VADIM YEVGENYEVICH ,  MERTENS BASTIAAN MATTHIAS ,  JOSEPHINA MOORS JOHANNES H ,  WEISS MARKUS ,  WOLSCHRIJN BASTIAAN T ,  NIJKERK MICHIEL DAVID

IPC: H01L21/027

CPC classification number: G03F7/70933 ,  G03F7/70916 ,  G03F7/7095

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which it is unlikely that the lifetime of optical elements is reduced due to etching and sputtering caused by ionization of the background gas.
SOLUTION: An optically activated device configured so as to guide radiation beam or patterned radiation beam M and a support structure 12, configured so as to support optically activated devices M1 to M6 are provided; and further, a gas supplier 14 for supplying a background gas 16 to a system is also provided. The radiation beam or the patterned radiation beam and the background gas react, and a plasma containing a plurality of ions is formed. The support structure comprises an element 20, provided with a material with a small sputter rate, a material with a large sputter threshold energy, or a material with a large ion implantation yield, in order to suppress the sputtering and the generation of sputtering product.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光刻设备，其中由于背景气体的离子化引起的蚀刻和溅射，光学元件的寿命不太可能降低。 提供了一种被配置为引导辐射束或图案化辐射束M的光学激活装置和被配置为支撑光学激活的装置M1至M6的支撑结构12。 此外，还提供了用于将背景气体16供应到系统的气体供应器14。 辐射束或图案化的辐射束和背景气体反应，并且形成包含多个离子的等离子体。 支撑结构包括具有溅射速率小的材料的元件20，具有大的溅射阈值能量的材料或具有大的离子注入产率的材料，以便抑制溅射和产生溅射产物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006352081A

公开(公告)日：2006-12-28

申请号：JP2006093871

申请日：2006-03-30

Applicant: ASML NETHERLANDS BV

Inventor： BAKKER LEVINUS P ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVIT ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  SCHUURMANS FRANK JEROEN PIETER ,  ZUKAVISHVILI GIVI GEORGIEVITCH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  VAN DER VELDEN MARC H L

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus for reducing sputtering caused by gas introduced to a projection beam optical path, and a method for manufacturing the apparatus. SOLUTION: The lithographic apparatus is arranged to project a beam from a radiation source to a substrate. The lithographic apparatus includes an optical element in an optical path of the beam, a gas inlet for introducing gas into the optical path of the beam so that the gas is ionized by the beam to a create electric field toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy that is greater than kinetic energy developed by ions of the gas in the electric fields for sputtering the optical element. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2006165588A

公开(公告)日：2006-06-22

申请号：JP2006000267

申请日：2006-01-04

Applicant: Asml Netherlands Bv ,  Carl Zeiss Smt Ag ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ ,  カール・ツァイス・エスエムティー・アーゲー

Inventor： BAKKER LEVINUS PETER ,  KURT RALPH ,  MERTENS BASTIAAN MATTHIAS ,  WEISS MARKUS ,  TRENKLER JOHANN ,  SINGER WOLFGANG

IPC: G03F7/30 ,  H01L21/027 ,  B08B6/00 ,  B08B7/00 ,  G03F7/20

CPC classification number: G03F7/70916 ,  B08B6/00 ,  B08B7/0035 ,  G03F7/70925

Abstract: PROBLEM TO BE SOLVED: To provide a cleaning system, a method, a lithographic projection device and a device manufacturing method excellent in controlling contamination removal from the front surface of an element in a lithographic projection device. SOLUTION: The cleaning system (100) that removes at least a part of the contamination (105) from the front surface (104) of the element (101) in the lithographic projection device, is provided with a cleaning particle feeder that feeds cleaning particles in the vicinity of the surface, the cleaning particle feeder is provided with an electric field generator (106, V) that generates an electric field (107). Further, the system includes a step that generates an electric field in at least a part of the lithographic projection device, a step that feeds the cleaning particles in the vicinity of the contamination by the electric field (107), and a step that removes the contamination by an interaction of the cleaning particles and contamination, thereby removing the contamination (105) from the surface (104). COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在光刻投影装置中控制污染物从前表面去除污染的清洗系统，方法，光刻投影装置和装置制造方法。 解决方案：从光刻投影装置中的元件（101）的前表面（104）去除污染物（105）的至少一部分的清洁系统（100）设置有清洁颗粒进料器 在表面附近进料清洁颗粒，清洁颗粒进料器设置有产生电场（107）的电场发生器（106，V）。 此外，该系统包括在光刻投影装置的至少一部分中产生电场的步骤，通过电场（107）将污染物附近的清洁粒子供给到电场（107）的步骤， 通过清洁颗粒和污染物的相互作用污染，从而从表面（104）去除污染物（105）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006041499A

公开(公告)日：2006-02-09

申请号：JP2005183273

申请日：2005-06-23

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： HAM ERIK LEONARDUS ,  HEERENS GERT-JAN ,  LANSBERGEN ROBERT GABRIEL M ,  MEIJER ELLARD A ,  MEIJER HENDRICUS JOHANNES MARI ,  MEILING HANS ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH

IPC: H01L21/027 ,  B65G49/00 ,  G03B27/52 ,  G03B27/62 ,  G03F7/20 ,  H01L21/677

CPC classification number: G03B27/52 ,  G03F7/70741

Abstract: PROBLEM TO BE SOLVED: To provide a box which is capable of protecting a lithography patterning device against external contaminants and making its throughput optimal.
SOLUTION: The transfer box 2 is equipped with an internal space 10 provided with a housing position at which the patterning device is housed and a container 8 provided with an opening used for transferring the patterning device. The internal space 10 is pressurized before the patterning device is transferred from the internal space 10 to a lithography apparatus. The box is equipped with a closure which closes the opening and/or a channel system 18 which discharges gas from the internal space 10 of the box to / and/or supplies the gas from / to the internal space of the box, and the lithography apparatus which is so constituted as to collaborate with the box device is included.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够保护光刻图案形成装置免受外部污染物并使其吞吐量最优化的盒子。 解决方案：转印盒2配备有内部空间10，内部空间10设置有容纳图案形成装置的容纳位置，容器8具有用于转印图案形成装置的开口。 在图案形成装置从内部空间10传送到光刻装置之前，内部空间10被加压。 该箱子装有封闭开口和/或通道系统18，该通道系统18将来自箱体的内部空间10的气体从盒子的内部空间排出和/或从气体的内部空间供应气体，并且光刻 包括与盒装置协作的装置。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003188096A

公开(公告)日：2003-07-04

申请号：JP2002369011

申请日：2002-11-15

Applicant: ASML NETHERLANDS BV

Inventor： VAN SCHAIK WILLEM ,  DUISTERWINKEL ANTONIE ELLERT ,  MERTENS BASTIAAN MATTHIAS ,  MEILING HANS ,  KOSTER NORBERTUS BENEDICTUS

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic projection apparatus in which optical components can be cleaned with stabilized detergent. SOLUTION: The cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less then 250 nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space is purged with purge gas which contains a small amount of the oxygen-containing species in addition to a usual purge gas composition. Technique can also be used in an evacuated space by introducing the low pressure of the oxygen-containing species into the space. This technique has an advantage that the use of unstable materials such as ozone is avoided. COPYRIGHT: (C)2003,JPO