公开(公告)号：JP2010045400A

公开(公告)日：2010-02-25

申请号：JP2009264762

申请日：2009-11-20

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BAKKER LEVINUS P ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVITCH ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  SCHUURMANS FRANK JEROEN PIETER ,  ZUKAVISHVILI GIVI GEORGIEVITCH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  VAN DER VELDEN MARC H L

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70933 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus which reduces sputtering due to gas that has been introduced in an optical path of a projection beam, and to provide a device manufacturing method. SOLUTION: The lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The lithographic apparatus includes an optical element in an optical path of the beam, a gas inlet for introducing gas into the optical path of the beam so that the gas will be ionized by the beam to create an electric field toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold value of kinetic energy for sputtering the optical element that is greater than a kinetic energy developed by ions of the gas in the electric field. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光刻设备，其减少由于在投影光束的光路中引入的气体引起的溅射，并提供器件制造方法。 解决方案：光刻设备被布置成将来自辐射源的光束投射到基板上。 光刻设备包括光束的光路中的光学元件，用于将气体引入光束的光路中的气体入口，使得气体将被光束离子化以产生朝向光学元件的电场，并且 气体源耦合到用于供应气体的气体入口。 气体具有用于溅射光学元件的动能的阈值，其大于由电场中的气体的离子产生的动能。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006279051A

公开(公告)日：2006-10-12

申请号：JP2006088069

申请日：2006-03-28

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： JACOBS JOHANNES HENRICUS WILHE ,  BANINE VADIM YEVGENYEVICH ,  BREWSTER BARRIE DUDLEY ,  IVANOV VLADIMIR VITALEVITCH ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  LIVESEY ROBERT GORDON ,  WOLSCHRIJN BASTIAAN THEODOOR

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70933 ,  G03F7/70908

Abstract: PROBLEM TO BE SOLVED: To provide a lithography apparatus that can be used in a vacuum or semi-vacuum environment. SOLUTION: A lithography projection apparatus has a radiation system for supplying projection beams of radiation, a mask table provided with a mask holder for holding a mask, a substrate table provided with a substrate holder for holding a substrate, and a projection system for imaging a mask's radiated part onto a target portion of the substrate, wherein at least one gas purge ceiling opening is provided that operates between different zones of the apparatus, and one or more gases are supplied from the opening, the gases out of groups composed of hydrogen, heavy hydrogen, and a mixture of argon and hydrogen. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供可以在真空或半真空环境中使用的光刻设备。 解决方案：光刻投影设备具有用于提供投影射束的辐射系统，设置有用于保持掩模的掩模保持器的掩模台，设置有用于保持基板的基板保持器的基板台，以及投影系统 用于将掩模的辐射部分成像到基板的目标部分上，其中提供在设备的不同区域之间操作的至少一个气体吹扫天花板开口，并且一个或多个气体从开口供应，所述气体组成 的氢，重氢，以及氩和氢的混合物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004282046A

公开(公告)日：2004-10-07

申请号：JP2004045957

申请日：2004-02-23

Applicant: Asml Netherlands Bv ,  Cark Zeiss Smt Ag ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ ,  カール ツァイス エスエムテー アーゲー

Inventor： KURT RALPH ,  VAN BEEK MICHAEL CORNELIS ,  DUISTERWINKEL ANTONIE ELLERT ,  KIEFT ERIK RENE ,  MEILING HANS ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  STEVENS LUCAS HENRICUS JOHANNE ,  WOLSCHRIJN BASTIAAN THEODOOR

IPC: G01N21/94 ,  G01N21/27 ,  G01N21/33 ,  G01N21/35 ,  G01N21/956 ,  G03F7/20 ,  G21K5/00 ,  G21K5/02 ,  H01L21/027

CPC classification number: G03F7/70916 ,  G01N21/95684

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring the contamination on the surfaces of the constituent components of a lithographic projection apparatus. SOLUTION: The measuring apparatus includes a radiation transmitter for projecting radiation onto at least a part of the surface of each component of a lithographic projection apparatus and a radiation receiver which receives radiation from each constituent component. A processor, which is connected to the radiation receiver through communication, obtains the characteristics of the received radiation, and then determines the characteristics of the contamination on the basis of the radiation characteristics. The measuring apparatus comprises the steps of: projecting the radiation to the surface of each component, receiving the radiation from each component, and determining the characteristics of the contamination on the basis of the received radiation. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2007165874A

公开(公告)日：2007-06-28

申请号：JP2006325787

申请日：2006-12-01

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： VADIM YEVGENYEVICH BANIE ,  IVANOV VLADIMIR VITALEVITCH ,  JOSEPHINA MOORS JOHANNES HUBER ,  WOLSCHRIJN BASTIAAN THEODOOR ,  KLUNDER DERK JAN WILFRED ,  WILHELMUS VAN HERPEN MAARTEN M

IPC: H01L21/027 ,  G02B5/08 ,  G03F7/20

CPC classification number: G03F7/70933 ,  G03F7/70925

Abstract: PROBLEM TO BE SOLVED: To provide an EUV lithography apparatus, a cleaning configuration for efficiently removing contaminant for the apparatus, and a cleaning configuration for recovering reflectivity of an EUV optical component. SOLUTION: A collector CO is disposed, for example, in a cleaning cocoon so as for the collector CO to be disposed between two particular volumes or enclosures 12 and 14. Radicals such as H radicals are generated in one or both of the volumes 12 and 14, and a pressure region in a range of 1 to 10 Pa is used to produce a flux such that the radicals are moved in the collector CO. The H radicals are moved from the volume 12 to the volume 14, thereby they collide with a wall of the collector CO, so that they can clean a Sn contaminant or the like on the wall of the collector CO. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供EUV光刻设备，用于有效去除设备污染物的清洁配置以及用于恢复EUV光学部件的反射率的清洁配置。 解决方案：收集器CO例如设置在清洁茧中，以便收集器CO被设置在两个特定体积或外壳12和14之间。诸如H自由基的基团在一个或两个 体积12和14以及1至10Pa范围内的压力区域用于产生通量，使得自由基在收集器CO中移动.H自由基从体积12移动到体积14，从而它们 与收集器CO的壁碰撞，以便它们可以清洁收集器CO的壁上的Sn污染物等。（C）2007，JPO＆INPIT

公开(公告)号：JP2006352081A

公开(公告)日：2006-12-28

申请号：JP2006093871

申请日：2006-03-30

Applicant: ASML NETHERLANDS BV

Inventor： BAKKER LEVINUS P ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVIT ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  SCHUURMANS FRANK JEROEN PIETER ,  ZUKAVISHVILI GIVI GEORGIEVITCH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  VAN DER VELDEN MARC H L

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus for reducing sputtering caused by gas introduced to a projection beam optical path, and a method for manufacturing the apparatus. SOLUTION: The lithographic apparatus is arranged to project a beam from a radiation source to a substrate. The lithographic apparatus includes an optical element in an optical path of the beam, a gas inlet for introducing gas into the optical path of the beam so that the gas is ionized by the beam to a create electric field toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy that is greater than kinetic energy developed by ions of the gas in the electric fields for sputtering the optical element. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：WO2008044925A3

公开(公告)日：2009-03-05

申请号：PCT/NL2007050469

申请日：2007-09-25

Applicant: ASML NETHERLANDS BV ,  ZEISS CARL SMT AG ,  VAN HERPEN MAARTEN MARINUS JOHANNES WILHELMUS ,  BANINE VADIM YEVGENYEVICH ,  DE KUSTER JOHANNES PETERUS HENRICUS ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  STEVENS LUCAS HENRICUS JOHANNS ,  WOLSCHRIJN BASTIAAN THEODOOR ,  SIDELNIKOV YURII VICTOROVITCH ,  VAN DER VELDEN MARC HUBERTUS LORENZ ,  SOER WOUTER ANTHON ,  GIELISSEN KURT ,  STEIN THOMAS

Inventor： VAN HERPEN MAARTEN MARINUS JOHANNES WILHELMUS ,  BANINE VADIM YEVGENYEVICH ,  DE KUSTER JOHANNES PETERUS HENRICUS ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  STEVENS LUCAS HENRICUS JOHANNES ,  WOLSCHRIJN BASTIAAN THEODOOR ,  SIDELNIKOV YURII VICTOROVITCH ,  VAN DER VELDEN MARC HUBERTUS LORENZ ,  SOER WOUTER ANTHON ,  GIELISSEN KURT ,  STEIN THOMAS

IPC: G03F7/20

CPC classification number: G03F7/70925 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

Abstract: A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector (10A) and a second radiation dose detector (10B), each detector comprising a secondary electron emission surface (11) configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter (13), connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Abstract translation: 公开了一种被配置为将图案化的辐射束投影到基板的目标部分上的光刻设备。 该装置包括第一辐射剂量检测器（10A）和第二辐射剂量检测器（10B），每个检测器包括二次电子发射表面（11），其被配置为接收辐射通量并由于接收到辐射而发射二次电子 通量，相对于辐射传播方向观察到的相对于第二辐射剂量检测器位于上游的第一辐射剂量检测器和连接到每个检测器的仪表（13），以检测由二次电子产生的电流或电压 从各个电子发射表面发射。

公开(公告)号：WO2008044924A3

公开(公告)日：2008-08-07

申请号：PCT/NL2007050468

申请日：2007-09-25

Applicant: ASML NETHERLANDS BV ,  CARL ZEIS SMT AG ,  EHM DIRK HEINRICH ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  MEIJERINK MARCUS GERHARDUS HEN ,  STEIN THOMAS

Inventor： EHM DIRK HEINRICH ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  MEIJERINK MARCUS GERHARDUS HEN ,  STEIN THOMAS

IPC: G03F7/20

CPC classification number: G03F7/70925

Abstract: A method to clean optical elements of an apparatus, the apparatus being configured to project a beam of radiation onto a target portion of a substrate, the apparatus comprising a plurality of optical elements arranged in sequence in the path of the radiation beam, wherein the cleaning method comprises: cleaning one or more second optical elements of the sequence, which receive one or more relatively low second radiation doses during operation of the apparatus, utilizing cumulatively shorter cleaning periods than one or more first optical elements of the sequence that receive one or more first radiation doses during operation of the apparatus, a second radiation dose being lower than each relatively high first radiation dose.

Abstract translation: 一种清洁装置的光学元件的方法，该装置被配置为将辐射束投射到基板的目标部分上，该装置包括依次布置在辐射束的路径中的多个光学元件，其中清洁 方法包括：清洁序列的一个或多个第二光学元件，其在装置的操作期间接收一个或多个相对低的第二辐射剂量，利用比接收一个或多个序列的序列的一个或多个第一光学元件更短的清洁周期 在装置运行期间的第一辐射剂量，第二辐射剂量低于每个相对高的第一辐射剂量。

公开(公告)号：WO2008148516A3

公开(公告)日：2009-01-29

申请号：PCT/EP2008004400

申请日：2008-06-03

Applicant: ZEISS CARL SMT AG ,  ASML NETHERLANDS BV ,  EHM DIRK HEINRICH ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  MUELLENDER STEPHAN

Inventor： EHM DIRK HEINRICH ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  WOLSCHRIJN BASTIAAN THEODOOR ,  MUELLENDER STEPHAN

IPC: G21K1/06 ,  G02B5/08

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G02B5/0858 ,  G02B5/0891

Abstract: To reduce the negative influence of metallic contamination within an EUV lithography device on the reflectivity, a reflective optical element (50) for the extreme ultraviolet and soft x-ray wavelength ranges having a reflective surface is suggested, in which the reflective surface (59) has an uppermost layer (56) made of a material of the group consisting of zinc, manganese, silver, lead, tin, and their alloys. Further material from the group consisting of zinc, manganese, silver, lead, tin, and their alloys, which would accumulate during operation of the EUV lithography device on the reflective optical element (50) is converted into volatile compounds by adding atomic hydrogen.

Abstract translation: 为了减少EUV光刻装置内的金属污染对反射率的负面影响，提出了一种具有反射表面的极紫外和软X射线波长范围的反射光学元件（50），其中反射表面（59） 具有由锌，锰，银，铅，锡及其合金组成的组的材料制成的最上层（56）。 在EUV光刻装置在反射型光学元件（50）的操作期间积聚的来自由锌，锰，银，铅，锡及其合金组成的组的其它材料通过加入原子氢转化为挥发性化合物。

公开(公告)号：WO2008078993A3

公开(公告)日：2008-08-21

申请号：PCT/NL2007050661

申请日：2007-12-18

Applicant: ASML NETHERLANDS BV ,  ZEISS CARL SMT AG ,  STORM ARNOLDUS JAN ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  EHM DIRK HEINRICH

Inventor： STORM ARNOLDUS JAN ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  EHM DIRK HEINRICH

IPC: G03F7/20

CPC classification number: G03F7/70925 ,  G03F7/70058 ,  G03F7/70916

Abstract: A lithographic apparatus that includes an illumination system configured to condition a radiation beam. The illumination system includes a plurality of optical components. The apparatus also includes a support constructed to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus further includes a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The projection system includes a plurality of optical components. The apparatus also includes a contamination measurement unit for measuring contamination of a surface of at least one of the optical components. The contamination measurement unit is provided with a radiation sensor constructed and arranged to measure an optical characteristic of radiation received from the surface.

Abstract translation: 一种光刻设备，包括配置成调节辐射束的照明系统。 照明系统包括多个光学部件。 该装置还包括构造成支撑图案形成装置的支撑件。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 该装置还包括被构造成保持基板的基板台，以及配置成将图案化的辐射束投影到基板的目标部分上的投影系统。 投影系统包括多个光学部件。 该装置还包括用于测量至少一个光学部件的表面的污染物的污染测量单元。 污染测量单元设置有辐射传感器，其被构造和布置成测量从表面接收的辐射的光学特性。

公开(公告)号：WO2008034582A2

公开(公告)日：2008-03-27

申请号：PCT/EP2007008113

申请日：2007-09-18

Applicant: ZEISS CARL SMT AG ,  ASML NETHERLANDS BV ,  EHM DIRK HEINRICH ,  MUELLENDER STEPHAN ,  STEIN THOMAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  KRAUS DIETER ,  VERSLUIS RICHARD ,  MEIJERINK MARCUS GERHARDUS HEN

Inventor： EHM DIRK HEINRICH ,  MUELLENDER STEPHAN ,  STEIN THOMAS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  KRAUS DIETER ,  VERSLUIS RICHARD ,  MEIJERINK MARCUS GERHARDUS HEN

IPC: G03F7/20

CPC classification number: G03B27/16 ,  B82Y10/00 ,  G03F7/70841 ,  G03F7/70883 ,  G03F7/70916 ,  G21K2201/061

Abstract: The invention relates to an optical arrangement, in particular a projection exposure apparatus (1) for EUV lithography, comprising: a housing (2) that encloses an interior space (15); at least one, in particular reflective, optical element (4 to 10, 12, 14.1 to 14.6) that is arranged in the housing (2); at least one vacuum generating unit (3) for generating a vacuum in the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1 to 18.10) that is arranged in the interior space (15) of the housing (2) and that encloses at least the optical surface (17, 17.1, 17.2) of the optical element (4 to 10, 12, 14.1 to 14.5), wherein a contamination reduction unit is associated with the vacuum housing (18.1 to 18.10), which contamination reduction unit reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

Abstract translation: 用于EUV光刻的投影曝光装置技术领域本发明涉及一种用于EUV光刻的光学装置，尤其是投影曝光装置（1），包括：包围内部空间（15）的壳体（2）; （2）中布置的至少一个，特别是反射性光学元件（4至10,12,14.1至14.6）; 至少一个真空发生单元（3），用于在壳体（2）的内部空间（15）中产生真空; 和至少一个布置在壳体（2）的内部空间（15）中并至少包围光学元件（4）的光学表面（17,17.1,17.2）的真空壳体（18,18.1至18.10） 其中污染减少单元与真空壳体（18.1至18.10）相关联，所述污染减少单元至少降低污染物质，特别是水和/或烃的分压 相对于所述内部空间（15）中的污染物质的分压紧邻所述光学表面（17,17.1,17.2）。