公开(公告)号：JP2009016817A

公开(公告)日：2009-01-22

申请号：JP2008158609

申请日：2008-06-18

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： NIHTIANOV STOYAN ,  VAN DER SIJS ARIE JOHAN ,  MOEST BEARRACH ,  KEMPER PETRUS WILHELMUS JOSEPH ,  HAAST MARC ANTONIUS MARIA ,  BAAS GERARDUS WILHELMUS PETRUS ,  NANVER LIS KAREN ,  SARUBBI FRANCESCO ,  SCHUWER ANTONIUS ANDREAS JOHAN ,  GOMMEREN GREGORY MICHA ,  POT MARTIJN ,  SCHOLTES THOMAS LUDOVICUS MARI

IPC: H01L31/10 ,  H01L21/027

CPC classification number: H01L31/103 ,  G03F7/7085 ,  G03F7/70958 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/1185 ,  H01L31/1804 ,  Y02E10/547

Abstract: PROBLEM TO BE SOLVED: To provide a radiation detector 1, a method of manufacturing a radiation detector, and a lithographic apparatus including a radiation detector.
SOLUTION: The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive to radiation with a wavelength between 10-200 nm and/or for charged particles. The radiation detector 1 has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conductivity type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to the dopant layer. The second electrode is connected to the silicon substrate.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种辐射检测器1，一种制造辐射检测器的方法以及包括一个辐射检测器的光刻设备。 解决方案：辐射探测器具有辐射敏感表面。 辐射敏感表面对波长在10-200nm和/或带电粒子之间的辐射敏感。 辐射检测器1具有硅衬底，掺杂剂层，第一电极和第二电极。 硅衬底在第一表面侧的表面区域设置有一定导电类型的掺杂分布。 掺杂剂层设置在硅衬底的第一表面侧上。 掺杂剂层具有掺杂剂材料的第一层和第二层。 第二层是与硅衬底的第一表面侧的表面区域接触的扩散层。 第一电极连接到掺杂剂层。 第二电极连接到硅衬底。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：SG128584A1

公开(公告)日：2007-01-30

申请号：SG200603921

申请日：2006-06-08

Applicant: ASML NETHERLANDS BV

Inventor： REIJNEN MARTINUS CORNELIS ,  MAKAROVIC ANDREJ ,  KESSELS LAMBERTUS GERARDUS MAR ,  NIHTIANOV STOYAN ,  KEMPER PETRUS WILHELMUS JOSEPH ,  CHILOV KAMEN HRISTOV

Abstract: The present invention comprises a lithographic apparatus and device manufacturing method that uses a patterning device that increase a number of individually controllable elements that are programmed simultaneously to increase an update rate of an array of individually controllable elements. A number of required high speed analog inputs to the array is reduced. The complexity of the array is reduced and the maximum update speed of the array is increased. Furthermore, the number of elements within an array can be readily expanded. The patterning device can be divided into a plurality of groups of cells and the lithographic apparatus can comprise a plurality of supply channels. Each supply channel can be arranged to provide a voltage signal to each cell in a respective group of cells. This can reduce the number of required inputs to the patterning device for individually addressing each cell.

公开(公告)号：SG128650A1

公开(公告)日：2007-01-30

申请号：SG200604388

申请日：2006-06-27

Applicant: ASML NETHERLANDS BV

Inventor： MEULEN VAN DER FRITS ,  COX HENRIKUS HERMAN MARIE ,  HOUKES MARTIJN ,  VLIET VAN ROBERTUS JOHANNES ,  NIHTIANOV STOYAN ,  KEMPER PETRUS WILHELMUS JOSEPH ,  HANEGRAAF ROLAND PETRUS HENDRI

Abstract: A lithographic apparatus includes a substrate table to hold a substrate; a substrate table position measurement system to measure a position quantity of the substrate table, a projection system to project a patterned radiation beam onto a target portion of the substrate, a fluid supply system (LS) to supply an immersion fluid (IML) in a space between a downstream lens of the projection system and the substrate (W) and a leakage detection system (LDC) to detect leakage of the immersion fluid from the fluid supply system, the leakage detection system being constructed to detect leakage by measuring an electrical capacitance between two mutually isolated electrial conductors (COND1,COND2).